Resonant tunneling in semiconductors: physics and applications ; proceedings of a NATO Research Workshop on Resonant Tunneling in Semiconductors: Physics and Applications, held May 14 - 18, 1990, at El Escorial, Spain
Gespeichert in:
Weitere Verfasser: | , , |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Boston, MA
Springer US
1991
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Schriftenreihe: | NATO ASI Series, Series B: Physics
277 |
Schlagworte: | |
Online-Zugang: | Volltext |
Beschreibung: | This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects |
Beschreibung: | 1 Online-Ressource (XIII, 537 p) |
ISBN: | 9781461538462 9781461367161 |
DOI: | 10.1007/978-1-4615-3846-2 |
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Datensatz im Suchindex
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any_adam_object | |
author2 | Chang, Leroy L. Mendez, E. E. Tejedor, C. |
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spelling | Chang, Leroy L. (DE-588)1159335974 edt Resonant tunneling in semiconductors physics and applications ; proceedings of a NATO Research Workshop on Resonant Tunneling in Semiconductors: Physics and Applications, held May 14 - 18, 1990, at El Escorial, Spain edited by L.L. Chang and E.E. Mendez and C. Tejedor Boston, MA Springer US 1991 1 Online-Ressource (XIII, 537 p) txt rdacontent c rdamedia cr rdacarrier NATO ASI Series, Series B: Physics 277 This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects Physics Crystallography Engineering Atomic, Molecular, Optical and Plasma Physics Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Complexity Ingenieurwissenschaften Halbleiter (DE-588)4022993-2 gnd rswk-swf Heterostruktur-Bauelement (DE-588)4236378-0 gnd rswk-swf Tunneleffekt (DE-588)4136216-0 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift 1990 El Escorial gnd-content Tunneleffekt (DE-588)4136216-0 s Halbleiter (DE-588)4022993-2 s 2\p DE-604 Heterostruktur-Bauelement (DE-588)4236378-0 s 3\p DE-604 Mendez, E. E. edt Tejedor, C. edt Erscheint auch als Druck-Ausgabe 0-306-44048-2 https://doi.org/10.1007/978-1-4615-3846-2 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Resonant tunneling in semiconductors physics and applications ; proceedings of a NATO Research Workshop on Resonant Tunneling in Semiconductors: Physics and Applications, held May 14 - 18, 1990, at El Escorial, Spain Physics Crystallography Engineering Atomic, Molecular, Optical and Plasma Physics Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Complexity Ingenieurwissenschaften Halbleiter (DE-588)4022993-2 gnd Heterostruktur-Bauelement (DE-588)4236378-0 gnd Tunneleffekt (DE-588)4136216-0 gnd |
subject_GND | (DE-588)4022993-2 (DE-588)4236378-0 (DE-588)4136216-0 (DE-588)1071861417 |
title | Resonant tunneling in semiconductors physics and applications ; proceedings of a NATO Research Workshop on Resonant Tunneling in Semiconductors: Physics and Applications, held May 14 - 18, 1990, at El Escorial, Spain |
title_auth | Resonant tunneling in semiconductors physics and applications ; proceedings of a NATO Research Workshop on Resonant Tunneling in Semiconductors: Physics and Applications, held May 14 - 18, 1990, at El Escorial, Spain |
title_exact_search | Resonant tunneling in semiconductors physics and applications ; proceedings of a NATO Research Workshop on Resonant Tunneling in Semiconductors: Physics and Applications, held May 14 - 18, 1990, at El Escorial, Spain |
title_full | Resonant tunneling in semiconductors physics and applications ; proceedings of a NATO Research Workshop on Resonant Tunneling in Semiconductors: Physics and Applications, held May 14 - 18, 1990, at El Escorial, Spain edited by L.L. Chang and E.E. Mendez and C. Tejedor |
title_fullStr | Resonant tunneling in semiconductors physics and applications ; proceedings of a NATO Research Workshop on Resonant Tunneling in Semiconductors: Physics and Applications, held May 14 - 18, 1990, at El Escorial, Spain edited by L.L. Chang and E.E. Mendez and C. Tejedor |
title_full_unstemmed | Resonant tunneling in semiconductors physics and applications ; proceedings of a NATO Research Workshop on Resonant Tunneling in Semiconductors: Physics and Applications, held May 14 - 18, 1990, at El Escorial, Spain edited by L.L. Chang and E.E. Mendez and C. Tejedor |
title_short | Resonant tunneling in semiconductors |
title_sort | resonant tunneling in semiconductors physics and applications proceedings of a nato research workshop on resonant tunneling in semiconductors physics and applications held may 14 18 1990 at el escorial spain |
title_sub | physics and applications ; proceedings of a NATO Research Workshop on Resonant Tunneling in Semiconductors: Physics and Applications, held May 14 - 18, 1990, at El Escorial, Spain |
topic | Physics Crystallography Engineering Atomic, Molecular, Optical and Plasma Physics Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Complexity Ingenieurwissenschaften Halbleiter (DE-588)4022993-2 gnd Heterostruktur-Bauelement (DE-588)4236378-0 gnd Tunneleffekt (DE-588)4136216-0 gnd |
topic_facet | Physics Crystallography Engineering Atomic, Molecular, Optical and Plasma Physics Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Complexity Ingenieurwissenschaften Halbleiter Heterostruktur-Bauelement Tunneleffekt Konferenzschrift 1990 El Escorial |
url | https://doi.org/10.1007/978-1-4615-3846-2 |
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