Development of an electrical and thermal compact model for lateral double-diffused MOS transistors and high voltage MOSFETs:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
Dresden
TUDpress
2011
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | X, 172 S. graph. Darst. 210 mm x 148 mm |
| ISBN: | 9783942710206 |
Staff View
MARC
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| 245 | 1 | 0 | |a Development of an electrical and thermal compact model for lateral double-diffused MOS transistors and high voltage MOSFETs |c Kai E. Moebus |
| 264 | 1 | |a Dresden |b TUDpress |c 2011 | |
| 300 | |a X, 172 S. |b graph. Darst. |c 210 mm x 148 mm | ||
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| 502 | |a Zugl.: Dresden, Techn. Univ., Diss., 2011 | ||
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| 650 | 0 | 7 | |a Lateraltransistor |0 (DE-588)4416098-7 |2 gnd |9 rswk-swf |
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Record in the Search Index
| _version_ | 1804152278539567104 |
|---|---|
| adam_text | IMAGE 1
TABLE OF CONTENT
ABSTRACT I
TABLE OF CONTENT V
ACRONYMS IX
1 INTRODUCTION 1
REFERENCES 3
2 STRUCTURE AND CHARACTERISTICS OF HV-MOSFETS 5
2.1 HV-MOSFET STRUCTURE 5
2.1.1 GENERAL 5
2.1.2 SIMULATION STRUCTURE 6
2.2 HV-MOSFET BEHAVIOR 8
2.2.1 QUASI-SATURATION 8
2.2.2 DIPOLE LAYER 13
2.2.3 SELF-HEATING 16
2.2.4 IMPACT IONIZATION 17
2.2.5 CAPACITANCES 18
REFERENCES 25
3 HIGH-VOLTAGE MOSFET MODEL 31
3.1 INTRODUCTION 31
3.2 VK MODELING APPROACH 32
3.3 COMPACT MODEL REVIEW 34
3.3.1 NXP MODELS 34
3.3.1.1 MM11 34
3.3.1.2 MM20 39
3.3.2 HISIM-HV 41
3.3.3 HV-EKV 45
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1011458357
DIGITALISIERT DURCH
IMAGE 2
TABLE OF CONTENT
3.4 MODEL DERIVATION 49
3.4.1 ELECTRIC FIELD IN THE DRIFT REGION 50
3.4.2 ELECTRIC FIELD AT THE DRIFT REGION BEGINNING 52 3.4.2.1 LINEAR 52
3.4.2.2 SATURATION 53
3.4.2.3 SMOOTHING 55
3.4.3 FIELD-BASED DRIFT REGION MODEL 60
3.4.4 EXTENDED FIELD-BASED DRIFT REGION MODEL 63 3.4.4.1 PARTIAL LATERAL
DEPLETION 65
3.4.4.2 FULL LATERAL DEPLETION 69
3.4.4.3 TRANSITION PLD - FLD 69
3.4.4.4 SMOOTHING 70
3.4.5 SEMI-PHYSICAL FIELD-BASED MODEL 76
3.5 MODEL VALIDATION 79
3.5.1 BENCHMARK TESTS 79
3.5.2 PARAMETER EXTRACTION 82
3.5.3 MODEL COMPARISON VDMOS 84
3.5.4 MODEL COMPARISON LDMOS 87
REFERENCES 90
4 HIGH-VOLTAGE MOSFET SELF-HEATING MODEL 97
4.1 INTRODUCTION 97
4.2 MODELING APPROACH 98
4.2.1 BASIC SELF-HEATING NETWORKS 98
4.2.2 MODEL SEGMENTATION 103
4.3 THERMAL SIMULATIONS 107
4.3.1 GENERAL 107
4.3.2 DEVICE STRUCTURE 109
4.3.3 BOUNDARY CONDITIONS 110
4.3.4 THERMAL CONDUCTIVITY 114
4.3.5 POWER DISTRIBUTION APPROXIMATION 116
4.4 THERMAL DEVICE MODEL 119
4.4.1 GREEN S FUNCTION APPROACH 119
4.4.2 H COEFFICIENT EXTRACTION 121
IMAGE 3
TABLE OF CONTENT
4.4.3 H COEFFICIENT GEOMETRY DEPENDENCE 124
4.4.4 H COEFFICIENT EQUATIONS 128
4.4.5 VALIDATION 131
4.4.6 SH NETWORK GENERATION 135
4.5 THERMAL METALLIZATION MODEL 136
4.5.1 GENERAL 136
4.5.2 SIMULATION STRUCTURES 138
4.5.3 POLY-SI GATE STACK 141
4.5.4 METAL ONE AS COOLING FIN 144
4.5.5 METAL ONE MODEL DERIVATION 146
4.5.6 VALIDATION 159
REFERENCES 162
5 CONCLUSION AND OUTLOOK 171
|
| any_adam_object | 1 |
| author | Moebus, Kai E. |
| author_facet | Moebus, Kai E. |
| author_role | aut |
| author_sort | Moebus, Kai E. |
| author_variant | k e m ke kem |
| building | Verbundindex |
| bvnumber | BV041913865 |
| classification_rvk | ZN 4870 |
| ctrlnum | (OCoLC)915478421 (DE-599)DNB1011458357 |
| dewey-full | 620 621.3815284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 620 - Engineering and allied operations 621 - Applied physics |
| dewey-raw | 620 621.3815284 |
| dewey-search | 620 621.3815284 |
| dewey-sort | 3620 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
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| id | DE-604.BV041913865 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T01:08:10Z |
| institution | BVB |
| isbn | 9783942710206 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027357516 |
| oclc_num | 915478421 |
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| physical | X, 172 S. graph. Darst. 210 mm x 148 mm |
| publishDate | 2011 |
| publishDateSearch | 2011 |
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| spelling | Moebus, Kai E. Verfasser aut Development of an electrical and thermal compact model for lateral double-diffused MOS transistors and high voltage MOSFETs Kai E. Moebus Dresden TUDpress 2011 X, 172 S. graph. Darst. 210 mm x 148 mm txt rdacontent n rdamedia nc rdacarrier Zugl.: Dresden, Techn. Univ., Diss., 2011 Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf Elektrische Eigenschaft (DE-588)4193812-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Simulation (DE-588)4055072-2 gnd rswk-swf Thermodynamische Eigenschaft (DE-588)4126056-9 gnd rswk-swf Hochspannungstransistor (DE-588)4160258-4 gnd rswk-swf DMOS-FET (DE-588)4487701-8 gnd rswk-swf Lateraltransistor (DE-588)4416098-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content MOS-FET (DE-588)4207266-9 s Hochspannungstransistor (DE-588)4160258-4 s Simulation (DE-588)4055072-2 s Schaltungsentwurf (DE-588)4179389-4 s Elektrische Eigenschaft (DE-588)4193812-4 s Thermodynamische Eigenschaft (DE-588)4126056-9 s DE-604 DMOS-FET (DE-588)4487701-8 s Lateraltransistor (DE-588)4416098-7 s DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027357516&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Moebus, Kai E. Development of an electrical and thermal compact model for lateral double-diffused MOS transistors and high voltage MOSFETs Schaltungsentwurf (DE-588)4179389-4 gnd Elektrische Eigenschaft (DE-588)4193812-4 gnd MOS-FET (DE-588)4207266-9 gnd Simulation (DE-588)4055072-2 gnd Thermodynamische Eigenschaft (DE-588)4126056-9 gnd Hochspannungstransistor (DE-588)4160258-4 gnd DMOS-FET (DE-588)4487701-8 gnd Lateraltransistor (DE-588)4416098-7 gnd |
| subject_GND | (DE-588)4179389-4 (DE-588)4193812-4 (DE-588)4207266-9 (DE-588)4055072-2 (DE-588)4126056-9 (DE-588)4160258-4 (DE-588)4487701-8 (DE-588)4416098-7 (DE-588)4113937-9 |
| title | Development of an electrical and thermal compact model for lateral double-diffused MOS transistors and high voltage MOSFETs |
| title_auth | Development of an electrical and thermal compact model for lateral double-diffused MOS transistors and high voltage MOSFETs |
| title_exact_search | Development of an electrical and thermal compact model for lateral double-diffused MOS transistors and high voltage MOSFETs |
| title_full | Development of an electrical and thermal compact model for lateral double-diffused MOS transistors and high voltage MOSFETs Kai E. Moebus |
| title_fullStr | Development of an electrical and thermal compact model for lateral double-diffused MOS transistors and high voltage MOSFETs Kai E. Moebus |
| title_full_unstemmed | Development of an electrical and thermal compact model for lateral double-diffused MOS transistors and high voltage MOSFETs Kai E. Moebus |
| title_short | Development of an electrical and thermal compact model for lateral double-diffused MOS transistors and high voltage MOSFETs |
| title_sort | development of an electrical and thermal compact model for lateral double diffused mos transistors and high voltage mosfets |
| topic | Schaltungsentwurf (DE-588)4179389-4 gnd Elektrische Eigenschaft (DE-588)4193812-4 gnd MOS-FET (DE-588)4207266-9 gnd Simulation (DE-588)4055072-2 gnd Thermodynamische Eigenschaft (DE-588)4126056-9 gnd Hochspannungstransistor (DE-588)4160258-4 gnd DMOS-FET (DE-588)4487701-8 gnd Lateraltransistor (DE-588)4416098-7 gnd |
| topic_facet | Schaltungsentwurf Elektrische Eigenschaft MOS-FET Simulation Thermodynamische Eigenschaft Hochspannungstransistor DMOS-FET Lateraltransistor Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027357516&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT moebuskaie developmentofanelectricalandthermalcompactmodelforlateraldoublediffusedmostransistorsandhighvoltagemosfets |