Nanowire Field Effect Transistors: Principles and Applications:
Saved in:
| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | BTU01 FHA01 FHI01 FHN01 FHR01 FKE01 FRO01 FWS01 FWS02 UBY01 Volltext |
| Item Description: | "Nanowire Field Effect Transistor: Basic Principles and Applications" places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject |
| Physical Description: | 1 Online-Ressource (VI, 290 p.) 196 illus., 98 illus. in color |
| ISBN: | 9781461481249 |
| DOI: | 10.1007/978-1-4614-8124-9 |
Staff View
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV041470884 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 131210s2014 |||| o||u| ||||||eng d | ||
| 020 | |a 9781461481249 |9 978-1-4614-8124-9 | ||
| 024 | 7 | |a 10.1007/978-1-4614-8124-9 |2 doi | |
| 035 | |a (OCoLC)865039242 | ||
| 035 | |a (DE-599)BVBBV041470884 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-Aug4 |a DE-92 |a DE-634 |a DE-859 |a DE-898 |a DE-573 |a DE-861 |a DE-706 |a DE-863 |a DE-862 | ||
| 082 | 0 | |a 621.381 |2 23 | |
| 100 | 1 | |a Kim, Dae Mann |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Nanowire Field Effect Transistors: Principles and Applications |c edited by Dae Mann Kim, Yoon-Ha Jeong |
| 264 | 1 | |c 2014 | |
| 300 | |a 1 Online-Ressource (VI, 290 p.) |b 196 illus., 98 illus. in color | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a "Nanowire Field Effect Transistor: Basic Principles and Applications" places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject | ||
| 505 | 0 | |a Quantum Wire and Sub-Bands -- Carrier Concentration and Transport -- P-N Junction Diode: I-V Behavior and Applications -- Silicon Nanowire Field Effect Transistor -- Fabrication of Nanowires and their Applications -- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions -- Green Energy Devices -- Nanowire Field Effect Transistors in Optoelectronics -- Nanowire BioFETs: An Overview -- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology -- Nanowire FET Circuit Design – An Overview | |
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Electronics | |
| 650 | 4 | |a Optical materials | |
| 650 | 4 | |a Nanotechnology | |
| 650 | 4 | |a Electronics and Microelectronics, Instrumentation | |
| 650 | 4 | |a Optical and Electronic Materials | |
| 650 | 4 | |a Electronic Circuits and Devices | |
| 650 | 4 | |a Ingenieurwissenschaften | |
| 700 | 1 | |a Jeong, Yoon-Ha |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4614-8124-9 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-ENG | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-026917026 | ||
| 966 | e | |u https://doi.org/10.1007/978-1-4614-8124-9 |l BTU01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-8124-9 |l FHA01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-8124-9 |l FHI01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-8124-9 |l FHN01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-8124-9 |l FHR01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-8124-9 |l FKE01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-8124-9 |l FRO01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-8124-9 |l FWS01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-8124-9 |l FWS02 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-8124-9 |l UBY01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
Record in the Search Index
| DE-BY-FWS_katkey | 1015838 |
|---|---|
| _version_ | 1824553640811036673 |
| any_adam_object | |
| author | Kim, Dae Mann |
| author_facet | Kim, Dae Mann |
| author_role | aut |
| author_sort | Kim, Dae Mann |
| author_variant | d m k dm dmk |
| building | Verbundindex |
| bvnumber | BV041470884 |
| collection | ZDB-2-ENG |
| contents | Quantum Wire and Sub-Bands -- Carrier Concentration and Transport -- P-N Junction Diode: I-V Behavior and Applications -- Silicon Nanowire Field Effect Transistor -- Fabrication of Nanowires and their Applications -- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions -- Green Energy Devices -- Nanowire Field Effect Transistors in Optoelectronics -- Nanowire BioFETs: An Overview -- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology -- Nanowire FET Circuit Design – An Overview |
| ctrlnum | (OCoLC)865039242 (DE-599)BVBBV041470884 |
| dewey-full | 621.381 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381 |
| dewey-search | 621.381 |
| dewey-sort | 3621.381 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-1-4614-8124-9 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03897nmm a2200553zc 4500</leader><controlfield tag="001">BV041470884</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">131210s2014 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781461481249</subfield><subfield code="9">978-1-4614-8124-9</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4614-8124-9</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)865039242</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV041470884</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-Aug4</subfield><subfield code="a">DE-92</subfield><subfield code="a">DE-634</subfield><subfield code="a">DE-859</subfield><subfield code="a">DE-898</subfield><subfield code="a">DE-573</subfield><subfield code="a">DE-861</subfield><subfield code="a">DE-706</subfield><subfield code="a">DE-863</subfield><subfield code="a">DE-862</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381</subfield><subfield code="2">23</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kim, Dae Mann</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nanowire Field Effect Transistors: Principles and Applications</subfield><subfield code="c">edited by Dae Mann Kim, Yoon-Ha Jeong</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2014</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (VI, 290 p.)</subfield><subfield code="b">196 illus., 98 illus. in color</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">"Nanowire Field Effect Transistor: Basic Principles and Applications" places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">Quantum Wire and Sub-Bands -- Carrier Concentration and Transport -- P-N Junction Diode: I-V Behavior and Applications -- Silicon Nanowire Field Effect Transistor -- Fabrication of Nanowires and their Applications -- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions -- Green Energy Devices -- Nanowire Field Effect Transistors in Optoelectronics -- Nanowire BioFETs: An Overview -- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology -- Nanowire FET Circuit Design – An Overview</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nanotechnology</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics and Microelectronics, Instrumentation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical and Electronic Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronic Circuits and Devices</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ingenieurwissenschaften</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jeong, Yoon-Ha</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4614-8124-9</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-ENG</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-026917026</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-8124-9</subfield><subfield code="l">BTU01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-8124-9</subfield><subfield code="l">FHA01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-8124-9</subfield><subfield code="l">FHI01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-8124-9</subfield><subfield code="l">FHN01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-8124-9</subfield><subfield code="l">FHR01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-8124-9</subfield><subfield code="l">FKE01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-8124-9</subfield><subfield code="l">FRO01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-8124-9</subfield><subfield code="l">FWS01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-8124-9</subfield><subfield code="l">FWS02</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-8124-9</subfield><subfield code="l">UBY01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV041470884 |
| illustrated | Illustrated |
| indexdate | 2025-02-20T06:39:06Z |
| institution | BVB |
| isbn | 9781461481249 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-026917026 |
| oclc_num | 865039242 |
| open_access_boolean | |
| owner | DE-Aug4 DE-92 DE-634 DE-859 DE-898 DE-BY-UBR DE-573 DE-861 DE-706 DE-863 DE-BY-FWS DE-862 DE-BY-FWS |
| owner_facet | DE-Aug4 DE-92 DE-634 DE-859 DE-898 DE-BY-UBR DE-573 DE-861 DE-706 DE-863 DE-BY-FWS DE-862 DE-BY-FWS |
| physical | 1 Online-Ressource (VI, 290 p.) 196 illus., 98 illus. in color |
| psigel | ZDB-2-ENG |
| publishDate | 2014 |
| publishDateSearch | 2014 |
| publishDateSort | 2014 |
| record_format | marc |
| spellingShingle | Kim, Dae Mann Nanowire Field Effect Transistors: Principles and Applications Quantum Wire and Sub-Bands -- Carrier Concentration and Transport -- P-N Junction Diode: I-V Behavior and Applications -- Silicon Nanowire Field Effect Transistor -- Fabrication of Nanowires and their Applications -- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions -- Green Energy Devices -- Nanowire Field Effect Transistors in Optoelectronics -- Nanowire BioFETs: An Overview -- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology -- Nanowire FET Circuit Design – An Overview Engineering Electronics Optical materials Nanotechnology Electronics and Microelectronics, Instrumentation Optical and Electronic Materials Electronic Circuits and Devices Ingenieurwissenschaften |
| title | Nanowire Field Effect Transistors: Principles and Applications |
| title_auth | Nanowire Field Effect Transistors: Principles and Applications |
| title_exact_search | Nanowire Field Effect Transistors: Principles and Applications |
| title_full | Nanowire Field Effect Transistors: Principles and Applications edited by Dae Mann Kim, Yoon-Ha Jeong |
| title_fullStr | Nanowire Field Effect Transistors: Principles and Applications edited by Dae Mann Kim, Yoon-Ha Jeong |
| title_full_unstemmed | Nanowire Field Effect Transistors: Principles and Applications edited by Dae Mann Kim, Yoon-Ha Jeong |
| title_short | Nanowire Field Effect Transistors: Principles and Applications |
| title_sort | nanowire field effect transistors principles and applications |
| topic | Engineering Electronics Optical materials Nanotechnology Electronics and Microelectronics, Instrumentation Optical and Electronic Materials Electronic Circuits and Devices Ingenieurwissenschaften |
| topic_facet | Engineering Electronics Optical materials Nanotechnology Electronics and Microelectronics, Instrumentation Optical and Electronic Materials Electronic Circuits and Devices Ingenieurwissenschaften |
| url | https://doi.org/10.1007/978-1-4614-8124-9 |
| work_keys_str_mv | AT kimdaemann nanowirefieldeffecttransistorsprinciplesandapplications AT jeongyoonha nanowirefieldeffecttransistorsprinciplesandapplications |