Fundamentals of nanoscaled field effect transistors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
New York, NY [u.a.]
Springer
2013
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| Schlagworte: | |
| Online-Zugang: | BTU01 FHA01 FHI01 FHN01 FHR01 FKE01 FWS01 UBY01 Volltext Inhaltsverzeichnis Abstract |
| Beschreibung: | 1 Online-Ressource |
| ISBN: | 9781461468226 |
| DOI: | 10.1007/978-1-4614-6822-6 |
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| adam_text | FUNDAMENTALS OF NANOSCALED FIELD EFFECT TRANSISTORS
/ CHAUDHRY, AMIT
: 2013
TABLE OF CONTENTS / INHALTSVERZEICHNIS
SCALING OF A MOS TRANSISTOR
NANOSCALE EFFECTS- GATE OXIDE LEAKAGE CURRENTS
NANOSCALE EFFECTS- INVERSION LAYER QUANTIZATION
DIELECTRICS FOR NANOELECTRONICS
GERMANIUM TECHNOLOGY
BIAXIAL S-SI TECHNOLOGY
UNIAXIAL S-SI TECHNOLOGY
ALTERNATE MOS STRUCTURES
GRAPHENE TECHNOLOGY
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
FUNDAMENTALS OF NANOSCALED FIELD EFFECT TRANSISTORS
/ CHAUDHRY, AMIT
: 2013
ABSTRACT / INHALTSTEXT
FUNDAMENTALS OF NANOSCALED FIELD EFFECT TRANSISTORS GIVES COMPREHENSIVE
COVERAGE OF THEFUNDAMENTAL PHYSICAL PRINCIPLES AND THEORY BEHIND
NANOSCALE TRANSISTORS.THE SPECIFIC ISSUES THAT ARISE FOR NANOSCALE
MOSFETS, SUCH AS QUANTUM MECHANICAL TUNNELING AND INVERSION LAYER
QUANTIZATION, ARE FULLY EXPLORED. THE SOLUTIONS TO THESE ISSUES, SUCH AS
HIGH-Κ TECHNOLOGY, STRAINED-SI TECHNOLOGY, ALTERNATE DEVICES STRUCTURES
AND GRAPHENE TECHNOLOGY ARE ALSO GIVEN. SOME CASE STUDIES REGARDING THE
ABOVE ISSUES AND SOLUTION ARE ALSO GIVEN IN THE BOOK. IN SUMMARY, THIS
BOOK: COVERS THE FUNDAMENTAL PRINCIPLES BEHIND
NANOELECTRONICS/MICROELECTRONICS INCLUDES CHAPTERS DEVOTED TO SOLUTIONS
TACKLING THE QUANTUM MECHANICAL EFFECTS OCCURRING AT NANOSCALE PROVIDES
SOME CASE STUDIES TO UNDERSTAND THE ISSUE MATHEMATICALLY FUNDAMENTALS OF
NANOSCALED FIELD EFFECT TRANSISTORS IS AN IDEAL BOOK FOR RESEARCHERS AND
UNDERGRADUATE AND GRADUATE STUDENTS IN THE FIELD OF MICROELECTRONICS,
NANOELECTRONICS, AND ELECTRONICS
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
|
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| isbn | 9781461468226 |
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| spellingShingle | Chaudhry, Amit Fundamentals of nanoscaled field effect transistors Ingenieurwissenschaften Electronics Systems engineering Optical materials Engineering |
| title | Fundamentals of nanoscaled field effect transistors |
| title_auth | Fundamentals of nanoscaled field effect transistors |
| title_exact_search | Fundamentals of nanoscaled field effect transistors |
| title_full | Fundamentals of nanoscaled field effect transistors Amit Chaudhry |
| title_fullStr | Fundamentals of nanoscaled field effect transistors Amit Chaudhry |
| title_full_unstemmed | Fundamentals of nanoscaled field effect transistors Amit Chaudhry |
| title_short | Fundamentals of nanoscaled field effect transistors |
| title_sort | fundamentals of nanoscaled field effect transistors |
| topic | Ingenieurwissenschaften Electronics Systems engineering Optical materials Engineering |
| topic_facet | Ingenieurwissenschaften Electronics Systems engineering Optical materials Engineering |
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