Spintronics: foundation of MRAM memory for next generation
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
[Tokyo]
Nikkan Kogyo Shimbun
2007
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | VII, 172 S. Ill., graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV039776842 | ||
| 003 | DE-604 | ||
| 005 | 20120104 | ||
| 007 | t | ||
| 008 | 111223s2007 ad|| |||| 00||| und d | ||
| 035 | |a (OCoLC)772976011 | ||
| 035 | |a (DE-599)BVBBV039776842 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | |a und | ||
| 049 | |a DE-355 | ||
| 084 | |a UP 6700 |0 (DE-625)146429: |2 rvk | ||
| 100 | 1 | |a Miyazaki, Terunobu |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Spintronics |b foundation of MRAM memory for next generation |c Terunobu Miyazaki |
| 264 | 1 | |a [Tokyo] |b Nikkan Kogyo Shimbun |c 2007 | |
| 300 | |a VII, 172 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a Spintronik |0 (DE-588)7755384-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Spintronik |0 (DE-588)7755384-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 2 | |m Digitalisierung UB Regensburg |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024637723&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-024637723 | ||
Datensatz im Suchindex
| _version_ | 1804148695191519232 |
|---|---|
| adam_text | Spintronics
—
Foundation of the MRAM
memory for next generation—
Preface
-----------------------------------------------
і
Contents
---------------------------------.........------iv
Chapter
1
What are spin and
Spintronics?
—
ι
1.1
Explanation of words
----------------------------------------1
1.2
Spintronics society
-------------------------------------------1
1.3
Spin and magnetic moment
---------------------------------2
Chapter
2
Base of magnetism
-------------------6
2.1
History of magnetic material research
--------------------6
2.2
History of magnetic thin film research
-------------------8
2.3
Classification of magnetic substance
--------------------10
2.4
Band structure and half metal
-----------------------------11
2.5
Magnetic semiconductor
-----------------------------------13
2.5.1
Photo-induced ferromagnetism
-------------------------18
2.5.2
Electric field control ferromagnetism
------------------19
2.5.3
Tunnel magnetoresistance effect
------------------------20
2.6
Character of magnetic substance
-------------------------20
2.6.1
Saturation magnetization and Curie temperature
—20
(a) Magnetic moment
------------------------------------------20
(b) Exchange interaction
---------------------------------------23
(c) Weiss approximation and molecular field theory
------28
(d)Temperature dependence of spontaneous
magnetization
-----------------------------------------------30
(e) Spin wave approximation and
T3/2-
law of spontaneous
iv
magnetization
-----------------------------------------------33
(f)
How to obtain spontaneous magnetization and Curie
temperature
----------------------------------------------34
(g) Film thickness dependence of spontaneous
magnetization
--------------------------------------------37
2.6.2
Magnetic anisotropy
------------------------------------38
(a) Directional atomic order (atom pair model)
---------42
(b) Magnetic elastic effect
---------------------------------43
(c) Shape effect (ordered lattice, impurities
and anisotropic order of vacancy, etc.)
---------------44
2.6.3
Magnetic domain
---------------------------------------45
2.6.4
Magnetization mechanism
-----------------------------48
2.7
Asteroid curve
-----------------------------------------------52
2.8
Thermal fluctuation
----------------------------------------55
2.9
Size and magnetic research
-------------------------------56
Chapter
3 Magnetoresistance
effect
------------62
3.1
History of research
-----------------------------------------62
3.2
Basis of electrical conduction
-----------------------------63
3.2.1
Drift velocity and Fermi velocity
---------------------63
3.2.2
Matthiessen s law
---------------------------------------66
3.2.3
Two current model
--------------------------------------67
3.2.4
Resistance when spin flip occurs
---------------------67
3.2.5
Temperature dependence of
ρ
-------------------------69
3.2.6
How to obtain pT,
p¿,
and
a^p/pţ
--------------------70
3.3
Classification of magnetoresistance effects
-------------73
3.4
Anisotropic magnetoresistance effect
-------------------74
3.5
Origin of anisotropic magnetoresistance effect
---------77
3.6
Magnetoresistance curve in a basis of magnetization
rotation model
----------------------------------------------82
3.7
Giant magnetoresistance effect of super- lattices and
multilayer films
---------------------------------------------84
3.8
Tunnel magnetoresistance effect
-------------------------90
ν
3.8.1
Principle
---------------..........------------.......-.........90
3.8.2
Barrier height dependence of TMR ratio
----------93
3.8.3
Comparison among TMR
,
AMR and PHE effects
94
3.8.4
Spin valve-type junction with exchange bias layer
96
3.8.5
Single crystalline high-quality tunnel junction
-—99
3.8.6
Tunnel junction with half metal
---------------------101
3.8.7
Giant magnetoresistance effect in granular
structure
--------------------------------------------------103
Chapter
4
Formation of Spintronics
---------
ios
Chapter
5
MRAM
-------------------------------
in
5.1
Introduction
-------------------------------------------------111
5.2
Principles
----------------------------------------------------111
5.3
Current state of MRAM research and development
-114
5.3.1
High signal output power
-----------------------------116
5.3.2
High-speed writing/reading
--------------------------118
5.3.3
Low power consumption
-----------------------------119
(a) Free layer with synthetic ferri-structure
------------119
(b) An increase in magnetic field by conductor line
with magnetic film
-------------------------------------120
5.3.4
Making of large capacity
-----------------------------120
5.3.5
High reliabilities
---------------------------------------121
(a) Uniformity in insulating layer
------------------------121
(b) Thermal resistance
-------------------------------------122
(c) Thermal fluctuation
-------------------------------------123
(d) Cell selection
--------------------------------------------123
5.4
Technology for MRAM development
------------------126
5.4.1
Analysis of/- V curve
----------------------------------126
5.4.2
Inelastic electron tunnel spectroscopy
(IETS)
— 128
5.4.3
Conducting AFM and STM
--------------------------131
5.4.4
Measurement of spin polarization
-------------------135
5.4.5
Spin dynamics
------------------------------------------138
vi
(a) LLG equation, Gilbert damping, and spin
pumping
--------------------------------------------------140
(b) Precession of spin
---------------------------------------142
(c) Spin switching
-------------------------------------------151
(d) View to spin reversal by spin injection
--------------152
5.4.6
Micro-fabrication technologies-
.......---------------154
5.5
Comparison with the other memories
-----------------157
Chapter
6
Spintronics in the future
-------
ібо
6.1
Spin
FET
—........--------------------.......................-160
6.2
All metal spin transistor
-----------........----------------161
6.3
Magnetization reversal by spin injection
------.......- 161
Appendix
-------------.........................-........—.......
1
64
1.
About the sign and the unit
....................................164
2.
Physical constants that often come out in this book
— 165
3.
Vocabulary collection
......................................— 165
Index
...............................-.....................................-
1
67
vu
|
| any_adam_object | 1 |
| author | Miyazaki, Terunobu |
| author_facet | Miyazaki, Terunobu |
| author_role | aut |
| author_sort | Miyazaki, Terunobu |
| author_variant | t m tm |
| building | Verbundindex |
| bvnumber | BV039776842 |
| classification_rvk | UP 6700 |
| ctrlnum | (OCoLC)772976011 (DE-599)BVBBV039776842 |
| discipline | Physik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01140nam a2200301 c 4500</leader><controlfield tag="001">BV039776842</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20120104 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">111223s2007 ad|| |||| 00||| und d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)772976011</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV039776842</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">und</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-355</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 6700</subfield><subfield code="0">(DE-625)146429:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Miyazaki, Terunobu</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Spintronics</subfield><subfield code="b">foundation of MRAM memory for next generation</subfield><subfield code="c">Terunobu Miyazaki</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">[Tokyo]</subfield><subfield code="b">Nikkan Kogyo Shimbun</subfield><subfield code="c">2007</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VII, 172 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Spintronik</subfield><subfield code="0">(DE-588)7755384-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Spintronik</subfield><subfield code="0">(DE-588)7755384-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung UB Regensburg</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024637723&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-024637723</subfield></datafield></record></collection> |
| id | DE-604.BV039776842 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T00:11:13Z |
| institution | BVB |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-024637723 |
| oclc_num | 772976011 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR |
| owner_facet | DE-355 DE-BY-UBR |
| physical | VII, 172 S. Ill., graph. Darst. |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | Nikkan Kogyo Shimbun |
| record_format | marc |
| spelling | Miyazaki, Terunobu Verfasser aut Spintronics foundation of MRAM memory for next generation Terunobu Miyazaki [Tokyo] Nikkan Kogyo Shimbun 2007 VII, 172 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Spintronik (DE-588)7755384-6 gnd rswk-swf Spintronik (DE-588)7755384-6 s DE-604 Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024637723&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Miyazaki, Terunobu Spintronics foundation of MRAM memory for next generation Spintronik (DE-588)7755384-6 gnd |
| subject_GND | (DE-588)7755384-6 |
| title | Spintronics foundation of MRAM memory for next generation |
| title_auth | Spintronics foundation of MRAM memory for next generation |
| title_exact_search | Spintronics foundation of MRAM memory for next generation |
| title_full | Spintronics foundation of MRAM memory for next generation Terunobu Miyazaki |
| title_fullStr | Spintronics foundation of MRAM memory for next generation Terunobu Miyazaki |
| title_full_unstemmed | Spintronics foundation of MRAM memory for next generation Terunobu Miyazaki |
| title_short | Spintronics |
| title_sort | spintronics foundation of mram memory for next generation |
| title_sub | foundation of MRAM memory for next generation |
| topic | Spintronik (DE-588)7755384-6 gnd |
| topic_facet | Spintronik |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024637723&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT miyazakiterunobu spintronicsfoundationofmrammemoryfornextgeneration |