Porous silicon in practice: preparation, characterization and applications
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| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Weinheim
Wiley-VCH
[2012]
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Physical Description: | XII, 249 Seiten Illustrationen, Diagramme 240 mm x 170 mm |
| ISBN: | 9783527313785 3527313788 |
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MARC
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| 245 | 1 | 0 | |a Porous silicon in practice |b preparation, characterization and applications |c Michael J. Sailor |
| 264 | 1 | |a Weinheim |b Wiley-VCH |c [2012] | |
| 300 | |a XII, 249 Seiten |b Illustrationen, Diagramme |c 240 mm x 170 mm | ||
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Record in the Search Index
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| adam_text | IMAGE 1
CONTENTS
PREFACE XI
1 FUNDAMENTALS OF POROUS SILICON PREPARATION 1 1.1 INTRODUCTION 1
1.2 CHEMICAL REACTIONS GOVERNING THE DISSOLUTION OF SILICON 2 1.2.1
SILICON OXIDES AND THEIR DISSOLUTION IN HF 3 1.2.2 SILICON OXIDES AND
THEIR DISSOLUTION IN BASIC MEDIA 3
1.2.3 SILICON HYDRIDES 4 1.3 EXPERIMENTAL SET-UP AND TERMINOLOGY FOR
ELECTROCHEMICAL ETCHING OF POROUS SILICON 5 1.3.1 TWO-ELECTRODE CELL 6
1.3.2 THREE-ELECTRODE CELL 6 1.4 ELECTROCHEMICAL REACTIONS IN THE
SILICON SYSTEM 7 1.4.1 FOUR-ELECTRON ELECTROCHEMICAL OXIDATION OF
SILICON 8 1.4.2 TWO-ELECTRON ELECTROCHEMICAL OXIDATION OF SILICON 9
1.4.3 ELECTROPOLISHING 10 1.5 DENSITY, POROSITY, AND PORE SIZE
DEFINITIONS 11 1.6 MECHANISMS OF ELECTROCHEMICAL DISSOLUTION AND PORE
FORMATION 13
1.6.1 CHEMICAL FACTORS CONTROLLING THE ELECTROCHEMICAL ETCH 16 1.6.2
CRYSTAL FACE SELECTIVITY 18 1.6.3 PHYSICAL FACTORS CONTROLLING THE
ELECTROCHEMICAL ETCH 18 1.7 RESUME OF THE PROPERTIES OF CRYSTALLINE
SILICON 19 1.7.1 ORIENTATION 19 1.7.2 BAND STRUCTURE 20 1.7.3 ELECTRONS
AND HOLES 21 1.7 A PHOTOEXCITATION OF SEMICONDUCTORS 22 1.7.5 DOPANTS 23
1.7.6 CONDUCTIVITY 24 1.7.7 EVOLUTION OF ENERGY BANDS UPON IMMERSION IN
AN ELECTROLYTE 24
1.7.8 CHARGE TRANSPORT AT P-TYPE SI LIQUID JUNCTIONS 26
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/987213830
DIGITALISIERT DURCH
IMAGE 2
VI CONTENTS
1.7.9 IDEALIZED CURRENT-VOLTAGE CURVE AT P-TYPE LIQUID JUNCTIONS 26
1.7.10 ENERGETICS AT N-TYPE SI LIQUID JUNCTIONS 28 1.7.11 IDEALIZED
CURRENT-VOLTAGE CURVE AT N-TYPE LIQUID JUNCTIONS 28 1.8 CHOOSING,
CHARACTERIZING, AND PREPARING A SILICON WAFER 28 1.8.1 MEASUREMENT OF
WAFER RESISTIVITY 29 1.8.2 CLEAVING A SILICON WAFER 34 1.8.3
DETERMINATION OF CARRIER TYPE BY THE HOT-PROBE METHOD 36 1.8.4 OHMIC
CONTACTS 36 1.8.4.1 MAKING AN OHMIC CONTACT BY METAL EVAPORATION 39
1.8.4.2 MAKING AN OHMIC CONTACT BY MECHANICAL ABRASION 40
REFERENCES 40
2 PREPARATION OF MICRO-, MESO-, AND MACRO-POROUS SILICON LAYERS 43 2.1
ETCH CELL: MATERIALS AND CONSTRUCTION 43 2.2 POWER SUPPLY 44
2.3 OTHER SUPPLIES 48
2.4 SAFETY PRECAUTIONS AND HANDLING OF WASTE 48 2.5 PREPARING HF
ELECTROLYTE SOLUTIONS 50 2.6 CLEANING WAFERS PRIOR TO ETCHING 51 2.6.1
NO PREDEANING 51
2.6.2 ULTRASONIC CLEANING 51 2.6.3 RCA CLEANING 52 2.6.4 REMOVAL OF A
SACRIFICIAL POROUS LAYER WITH STRONG BASE 52 2.7 PREPARATION OF
MICROPOROUS SILICON FROM A P-TYPE WAFER 53 2.8 PREPARATION OF MESOPOROUS
SILICON FROM A P^-TYPE WAFER 57 2.9 PREPARATION OF MACROPOROUS,
LUMINESCENT POROUS SILICON FROM
AN N-TYPE WAFER (FRONTSIDE ILLUMINATION) 59 2.9.1 POWER SUPPLY
LIMITATIONS 63 2.10 PREPARATION OF MACROPOROUS, LUMINESCENT POROUS
SILICON FROM
AN N-TYPE WAFER (BACK SIDE ILLUMINATION) 64 2.11 PREPARATION OF POROUS
SILICON BY STAIN ETCHING 68 2.12 PREPARATION OF SILICON NANOWIRE ARRAYS
BY METAL-ASSISTED ETCHING 73
REFERENCES 75
3 PREPARATION OF SPATIALLY MODULATED POROUS SILICON LAYERS 77 3.1
TIME-PROGRAMMABLE CURRENT SOURCE 78 3.1.1 TIME RESOLUTION ISSUES 79
3.1.2 ETCHING WITH AN ANALOG SOURCE 80
3.1.3 ETCHING WITH A DIGITAL SOURCE 82 3.2 PORE MODULATION IN THE
Z-DIRECTION: DOUBLE LAYER 83 3.3 PORE MODULATION IN THE Z-DIRECTION:
RUGATE FILTER 83 3.3.1 TUNABILITY OF THE RUGATE SPECTRAL PEAK WAVELENGTH
88
3.3.2 WIDTH OF THE SPECTRAL BAND 92
IMAGE 3
CONTENTS I VII
3.4 MORE COMPLICATED PHOTONIC DEVICES: BRAGG STACKS,
MICROCAVITIES, AND MULTI-LINE SPECTRAL FILTERS 94 3.4.1 BRAGG REFLECTOR
96 3.4.2 MULTIPLE SPECTRAL PEAKS- SPECTRAL BARCODES 100 3.5 LATERAL
PORE GRADIENTS (IN THE X-Y PLANE) 104 3.6 PATTERNING IN THE X-Y PLANE
USING PHYSICAL OR VIRTUAL
MASKS 108
3.6.1 PHYSICAL MASKING USING PHOTORESISTS 109 3.6.2 VIRTUAL MASKING
USING PHOTOELECTROCHEMISTRY 112 3.7 OTHER PATTERNING METHODS 114
REFERENCES 114
4 FREESTANDING POROUS SILICON FILMS AND PARTICLES 119 4.1 FREESTANDING
FILMS OF POROUS SILICON- LIFT-OFFS 120 4.2 MICRON-SCALE PARTICLES OF
POROUS SILICON BY ULTRASONICATION OF LIFT-OFF FILMS 120
4.3 CORE-SHELL (SI/SIO 2 ) NANOPARTICLES OF LUMINESCENT POROUS SILICON
BY ULTRASONICATION 126 REFERENCES 130
5 CHARACTERIZATION OF POROUS SILICON 133 5.1 GRAVIMETRIC DETERMINATION
OF POROSITY AND THICKNESS 134 5.1.1 ERRORS AND LIMITATIONS OF THE
GRAVIMETRIC METHOD 137 5.2 ELECTRON MICROSCOPY AND SCANNED PROBE IMAGING
METHODS 138 5.2.1 CROSS-SECTIONAL IMAGING 138
5.2.2 PLAN-VIEW (TOP-DOWN) IMAGING 139 5.3 OPTICAL REFLECTANCE
MEASUREMENTS 139 5.3.1 INSTRUMENTATION TO COLLECT REFLECTANCE DATA 139
5.3.1.1 REFLECTANCE OPTICS 140 5.3.1.2 WAVELENGTH CALIBRATION 142
5.3.2 PRINCIPLES OF FABRY-PEROT INTERFERENCE 143 5.3.3 ANALYZING
FABRY-PEROT INTERFERENCE SPECTRA BY FOURIER TRANSFORM: THE RIFTS METHOD
150
5.3.3.1 PREPARATION OF SPECTRUM FOR FAST FOURIER TRANSFORM 351 5.3.3.2
INTERPRETATION OF THE FAST FOURIER TRANSFORM 153 5.3.4 THICKNESS AND
POROSITY BY THE SPECTROSCOPIC LIQUID INFILTRATION METHOD (SLIM) 154
5.3.4.1 BRUGGEMAN EFFECTIVE MEDIUM APPROXIMATION 155 5.3.4.2
DETERMINATION OF THICKNESS AND POROSITY BY SLIM 156 5.3.4.3
DETERMINATION OF INDEX OF REFRACTION OF THE POROUS SKELETON 156
5.3.4.4 EFFECT OF SKELETON INDEX ON POROSITY DETERMINED BY SLIM 158
5.3.5 COMPARISON OF GRAVIMETRIC MEASUREMENT WITH SLIM FOR POROSITY AND
THICKNESS DETERMINATION 159 5.3.6 ANALYSIS OF DOUBLE-LAYER STRUCTURES
USING RIFTS 362
IMAGE 4
VIIII CONTENTS
5.4 POROSITY, PORE SIZE, AND PORE SIZE DISTRIBUTION BY NITROGEN
ADSORPTION ANALYSIS (BET, BJH, AND BDB METHODS) 367 5.5 MEASUREMENT OF
STEADY-STATE PHOTOLUMINESCENCE SPECTRA 170 5.5.1 ORIGIN OF
PHOTOLUMINESCENCE FROM POROUS SILICON 170 5.5.1.1 TUNABILITY OF THE
PHOTOLUMINESCENCE SPECTRUM 3 71
5.5.1.2 MECHANISMS OF PHOTOLUMINESCENCE 373 5.5.2 INSTRUMENTATION TO
ACQUIRE STEADY-STATE PHOTOLUMINESCENCE SPECTRA 173 5.6 TIME-RESOLVED
PHOTOLUMINESCENCE SPECTRA 373
5.6.1 LONG, NONEXPONENTIAL EXCITED STATE LIFETIMES 173 5.6.2 INFLUENCE
OF SURFACE TRAPS 375 5.7 INFRARED SPECTROSCOPY OF POROUS SILICON 376
5.7.1 CHARACTERISTIC GROUP FREQUENCIES FOR POROUS SILICON 376
5.7.2 MEASUREMENT OF FTIR SPECTRA OF POROUS SILICON 178 5.7.2.1
TRANSMISSION MODE MEASUREMENT USING THE STANDARD ETCH CELL 179
REFERENCES 181
6 CHEMISTRY OF POROUS SILICON 189
6.1 OXIDE-FORMING REACTIONS OF POROUS SILICON 390 6.1.1 TEMPERATURE
DEPENDENCE OF OXIDATION USING GAS-PHASE OXIDANTS 190 6.1.2 THERMAL (AIR)
OXIDATION 393 6.1.3 OZONE OXIDATION 192 6.1.4 HIGH-PRESSURE WATER VAPOR
ANNEALING 193 6.1.5 OXIDATION IN AQUEOUS SOLUTIONS 193 6.1.5.1 AQUEOUS
OXIDATION INDUCED BY CATIONIC SURFACTANTS 194
6.1.6 ELECTROCHEMICAL OXIDATION IN AQUEOUS MINERAL ACIDS 194 6.1.7
OXIDATION BY ORGANIC SPECIES: KETONES, ALDEHYDES, QUINONES, AND
DIMETHYLSULFOXIDE 195 6.1.8 EFFECT OF CHEMICAL OXIDATION ON PORE
MORPHOLOGY 396 6.2 BIOLOGICAL IMPLICATIONS OF THE AQUEOUS CHEMISTRY OF
POROUS
SILICON 398
6.3 FORMATION OF SILICON-CARBON BONDS 200 6.3.1 THERMAL HYDROSILYLATION
TO PRODUCE SI-C BONDS 200 6.3.2 WORKING WITH AIR- AND WATER-SENSITIVE
COMPOUNDS - SCHLENK LINE MANIPULATIONS 201
6.3.3 CLASSIFICATION OF SURFACE CHEMISTRY BY CONTACT ANGLE 203 6.3.4
MICROWAVE-ASSISTED HYDROSILYLATION TO PRODUCE SI-C BONDS 204 6.3.5
CHEMICAL OR ELECTROCHEMICAL GRAFTING TO PRODUCE SI-C
BONDS 206
6.4 THERMAL CARBONIZATION REACTIONS 208 6 A.I THERMAL DEGRADATION OF
ACETYLENE TO FORM HYDROCARBONIZED POROUS SILICON 208
IMAGE 5
CONTENTS IX
6.4.2 THERMAL DEGRADATION OF POLYMERS TO FORM CARBONIZED POROUS
SILICON 209
6.5 CONJUGATION OF BIOMOLECULES TO MODIFIED POROUS SILICON 233 6.5.1
CARBODIIMIDE COUPLING REAGENTS 233 6.5.2 ATTACHMENT OF PEG TO IMPROVE
BIOCOMPATIBILITY 212 6.5.3 BIOMODIFICATION OF HYDROCARBONIZED POROUS
SILICON 213 6.5.4 SILANOL-BASED COUPLING TO OXIDIZED POROUS SILICON
SURFACES 215
6.6 CHEMICAL MODIFICATION IN TANDEM WITH ETCHING 217 6.7 METALLIZATION
REACTIONS OF POROUS SILICON 238 REFERENCES 219
APPENDIX A L. ETCH CELL ENGINEERING DIAGRAMS AND SCHEMATICS 229 STANDARD
OR SMALL ETCH CELL-COMPLETE 229 STANDARD ETCH CELL TOP PIECE 230
SMALL ETCH CELL TOP PIECE 231 ETCH CELL BASE (FOR EITHER STANDARD OR
SMALL ETCH CELL) 232 LARGE ETCH CELL-COMPLETE 232 LARGE ETCH CELL TOP
PIECE 233
LARGE ETCH CELL BASE 233
APPENDIX A2. SAFETY PRECAUTIONS WHEN WORKING WITH HYDROFLUORIC ACID 235
HYDROFLUORIC ACID HAZARDS 235 FIRST AID MEASURES FOR HF CONTACT 236
NOTE TO PHYSICIAN 238 HF ANTIDOTE GEL 239 FURTHER READING 239
APPENDIX A3. GAS DOSING CELL ENGINEERING DIAGRAMS AND SCHEMATICS 243 GAS
DOSING CELL TOP PIECE 242 GAS DOSING CELL MIDDLE PIECE 243 GAS DOSING
CELL BOTTOM PIECE 244
INDEX 245
|
| any_adam_object | 1 |
| author | Sailor, Michael J. |
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| id | DE-604.BV039722416 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T00:09:44Z |
| institution | BVB |
| isbn | 9783527313785 3527313788 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-024570476 |
| oclc_num | 762679838 |
| open_access_boolean | |
| owner | DE-1046 DE-92 DE-573 DE-384 |
| owner_facet | DE-1046 DE-92 DE-573 DE-384 |
| physical | XII, 249 Seiten Illustrationen, Diagramme 240 mm x 170 mm |
| publishDate | 2012 |
| publishDateSearch | 2012 |
| publishDateSort | 2012 |
| publisher | Wiley-VCH |
| record_format | marc |
| spelling | Sailor, Michael J. Verfasser aut Porous silicon in practice preparation, characterization and applications Michael J. Sailor Weinheim Wiley-VCH [2012] XII, 249 Seiten Illustrationen, Diagramme 240 mm x 170 mm txt rdacontent n rdamedia nc rdacarrier Poröser Stoff (DE-588)4046811-2 gnd rswk-swf Silicone (DE-588)4127342-4 gnd rswk-swf Silicone (DE-588)4127342-4 s Poröser Stoff (DE-588)4046811-2 s DE-604 Erscheint auch als Online-Ausgabe, PDF 978-3-527-64192-5 Erscheint auch als Online-Ausgabe, EPUB 978-3-527-64191-8 Erscheint auch als Online-Ausgabe, MOBI 978-3-527-64193-2 DE-601 pdf/application http://www.gbv.de/dms/bowker/toc/9783527313785.pdf Inhaltsverzeichnis DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024570476&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Sailor, Michael J. Porous silicon in practice preparation, characterization and applications Poröser Stoff (DE-588)4046811-2 gnd Silicone (DE-588)4127342-4 gnd |
| subject_GND | (DE-588)4046811-2 (DE-588)4127342-4 |
| title | Porous silicon in practice preparation, characterization and applications |
| title_auth | Porous silicon in practice preparation, characterization and applications |
| title_exact_search | Porous silicon in practice preparation, characterization and applications |
| title_full | Porous silicon in practice preparation, characterization and applications Michael J. Sailor |
| title_fullStr | Porous silicon in practice preparation, characterization and applications Michael J. Sailor |
| title_full_unstemmed | Porous silicon in practice preparation, characterization and applications Michael J. Sailor |
| title_short | Porous silicon in practice |
| title_sort | porous silicon in practice preparation characterization and applications |
| title_sub | preparation, characterization and applications |
| topic | Poröser Stoff (DE-588)4046811-2 gnd Silicone (DE-588)4127342-4 gnd |
| topic_facet | Poröser Stoff Silicone |
| url | http://www.gbv.de/dms/bowker/toc/9783527313785.pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024570476&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT sailormichaelj poroussiliconinpracticepreparationcharacterizationandapplications |
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