Silicon carbide power devices:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
New Jersey
World Scientific
2009
|
| Edition: | Repr. |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Includes bibliographical references and index |
| Physical Description: | XXI, 503 S. Ill., graph. Darst. 24 cm |
| ISBN: | 9812566058 9789812566058 |
Staff View
MARC
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| 300 | |a XXI, 503 S. |b Ill., graph. Darst. |c 24 cm | ||
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Record in the Search Index
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|---|---|
| adam_text | Titel: Silicon carbide power devices
Autor: Baliga, Bantval Jayant
Jahr: 2009
Contents
Preface vii
Chapter 1 Introduction 1
1.1 Ideal and Typical Power Device Characteristics............................3
1.2 Unipolar Power Devices.................................................................6
1.3 Bipolar Power Devices...................................................................8
1.4 MOS-Bipolar Power Devices.........................................................9
1.5 Ideal Drift Region for Unipolar Power Devices...........................11
1.6 Summary.......................................................................................13
References.....................................................................................14
Chapter 2 Material Properties and Technology 15
2.1 Fundamental Properties................................................................16
2.1.1 Energy Band Gap...............................................................17
2.1.2 Impact Ionization Coefficients...........................................21
2.1.3 Electron Mobility...............................................................23
2.2 Other Properties Relevant to Power Devices................................25
2.2.1 Donor and Acceptor Ionization Energy Levels..................25
2.2.2 Recombination Lifetimes...................................................26
2.2.3 Metal-Semiconductor Contacts..........................................26
2.3 Fabrication Technology................................................................28
2.3.1 Diffusion Coefficients and Solubility of Dopants..............28
2.3.2 Ion Implantation and Annealing.........................................29
2.3.3 Gate Oxide Formation........................................................29
2.3.4 Reactive Ion Etching of Trenches......................................32
2.4 Summary.......................................................................................32
References.....................................................................................33
SILICON CARBIDE POWER DEVICES
Chapter 3 Breakdown Voltage 3^
3.1 One-Dimensional Abrupt Junction...............................................37
3.2 Schottky Diode Edge Termination...............................................44
3.2.1 Planar Schottky Diode Edge Termination..........................44
3.2.2 Planar Schottky Diode with Field Plate Termination.........45
3.2.3 Schottky Diode with Floating Metal Rings........................50
3.2.4 Schottky Diode Edge Termination with Argon Implant ....50
3.2.5 Schottky Diode Edge Termination with RESP Region......52
3.3 P-N Junction Edge Termination...................................................53
3.3.1 Planar Junction Edge Termination.....................................53
3.3.2 Planar Junction Edge Termination with Field Plate...........57
3.3.3 Planar Junction Edge Termination with Floating Rings.....61
3.3.4 Planar Junction Edge Termination with P-Extension.........62
3.4 Summary.......................................................................................68
References.....................................................................................69
Chapter 4 PiN Rectifiers 71
4.1 One-Dimensional PiN Structure...................................................71
4.2 Experimental Results....................................................................79
4.3 Summary.......................................................................................80
References.....................................................................................81
Chapter 5 Schottky Rectifiers 83
5.1 Schottky Rectifier Structure: Forward Conduction......................84
5.1.1 Forward Conduction: Simulation Results..........................88
5.1.2 Forward Conduction: Experimental Results......................90
5.2 Schottky Rectifier Structure: Reverse Blocking...........................91
5.3 Schottky Rectifier Structure: Impact of Defects...........................96
5.4 Reliability Issues.........................................................................100
5.5 Summary................................................................................iqq
References...............................................................................iqi
Contents
Chapter 6 Shielded Schottky Rectifiers 103
6.1 Junction Barrier Schottky (JBS) Rectifier Structure...................104
6.1.1 JBS Rectifier Structure: Forward Conduction Model......106
6.1.2 JBS Rectifier Structure: Reverse Leakage Model............108
6.1.3 JBS Rectifier Structure: Simulation Results.....................109
6.1.4 JBS Rectifier Structure: Experimental Results.................118
6.2 Trench MOS Barrier Schottky (TMBS) Rectifier Structure.......120
6.2.1 TMBS Rectifier Structure: Simulation Results................121
6.3 Trench Schottky Barrier Schottky (TSBS) Rectifier Structure... 124
6.3.1 TSBS Rectifier Structure: Simulation Results.................127
6.3.2 TSBS Rectifiers: Experimental Results............................138
6.4 Summary.....................................................................................138
References...................................................................................139
Chapter 7 Metal-Semiconductor Field Effect Transistors 141
7.1 Trench Junction (Metal-Semiconductor) FET Structure............142
7.1.1 Forward Blocking.............................................................144
7.1.2 On-State............................................................................148
7.2 Trench MESFET Structure: Simulation Results.........................151
7.2.1 On-State Characteristics...................................................151
7.2.2 Blocking Characteristics...................................................154
7.2.3 Output Characteristics......................................................163
7.3 JFET Structure: Simulation Results............................................165
7.4 Planar MESFET Structure..........................................................168
7.4.1 Forward Blocking.............................................................170
7.4.2 On-State Resistance..........................................................170
7.5 Planar MESFET Structure: Numerical Simulations...................174
7.5.1 On-State Characteristics...................................................174
7.5.2 Blocking Characteristics...................................................177
7.5.3 Output Characteristics......................................................187
7.5.4 Gate Contact Shielding.....................................................189
7.6 Experimental Results: Trench Gate Structures...........................191
7.7 Experimental Results: Planar Gate Structures............................194
7.8 Summary.....................................................................................195
References...................................................................................196
XVIU
SILICON CARBIDE POWER DEVICES
Chapter 8 The Baliga-Pair Configuration 199
8.1 The Baliga-Pair Configuration....................................................201
8.1.1 Voltage Blocking Mode...................................................202
8.1.2 Forward Conduction Mode..............................................203
8.1.3 Current Saturation Mode..................................................203
8.1.4 Switching Characteristics.................................................204
8.1.5 Fly-Back Diode................................................................204
8.2 Baliga-Pair: Simulation Results..................................................205
8.2.1 Voltage Blocking Mode...................................................206
8.2.2 Forward Conduction Mode..............................................208
8.2.3 Current Saturation Mode..................................................210
8.2.4 Switching Characteristics.................................................211
8.2.5 Fly-Back Diode................................................................214
8.3 Baliga-Pair Configuration: Experimental Results......................217
8.4 Summary.....................................................................................217
References...................................................................................218
Chapter 9 Planar Power MOSFETs 221
9.1 Planar Power MOSFET Structure..............................................223
9.1.1 Blocking Characteristics...................................................224
9.1.2 Forward Conduction.........................................................227
9.1.3 Threshold Voltage............................................................234
9.1.4 Threshold Voltage Simulations........................................238
9.1.5 Hot Electron Injection......................................................241
9.2 Planar Power MOSFET Structure: Numerical Simulations........242
9.2.1 Blocking Characteristics...................................................243
9.2.2 On-State Characteristics...................................................247
9.2.3 Output Characteristics......................................................250
9.3 Planar Power MOSFET: Experimental Results..........................252
9.3.1 Silicon Carbide MOSFET: Inversion Layer Mobility......253
9.3.2 The 4H-SiC Planar MOSFET: Experimental Results......254
Summary........................................................................... 254
9.4
References............................................................. 256
Contents
Chapter 10 Shielded Planar MOSFETs 259
10.1 Shielded Planar MOSFET Structure...........................................260
10.1.1 Blocking Mode.................................................................261
10.1.2Forward Conduction.........................................................262
10.1.3 Threshold Voltage............................................................267
10.1.4 ACCUFET Structure: Threshold Voltage Simulations ....270
10.2 Planar Shielded Inversion-Mode MOSFET: Simulations...........276
10.2.1 Blocking Characteristics...................................................276
10.2.2 On-State Characteristics...................................................279
10.2.3 Output Characteristics......................................................281
10.3 Planar Shielded ACCUFET Structure: Simulations...................282
10.3.1 Blocking Characteristics...................................................283
10.3.2On-State Characteristics...................................................290
10.3.3 Output Characteristics......................................................295
10.4 Planar Shielded MOSFET Structures: Experimental Results.....297
10.4.1 Silicon Carbide MOSFET: Accumulation Mobility.........298
10.4.2 Inversion-Mode MOSFET: Experimental Results...........300
10.4.3 Accumulation-Mode MOSFET: Experimental Results....301
10.5 Summary.....................................................................................303
References...................................................................................304
Chapter 11 Trench-Gate Power MOSFETs 307
11.1 Trench-Gate Power MOSFET Structure.....................................308
11.1.1 Blocking Characteristics...................................................309
11.1.2Forward Conduction.........................................................310
11.1.3 Threshold Voltage............................................................316
11.2 Trench-Gate Power MOSFET Structure: Simulations...............318
11.2.1 Blocking Characteristics...................................................318
11.2.2 On-State Characteristics...................................................323
11.2.3 Output Characteristics......................................................325
11.3 Accumulation-Mode Trench-Gate Power MOSFET..................326
11.4 High Permittivity Gate Insulator.................................................328
11.5 Trench-Gate Power MOSFET: Experimental Results................333
11.6 Summary.....................................................................................335
References...................................................................................336
Xx SILICON CARBIDE POWER DEVICES
Chapter 12 Shielded Trench-Gate Power MOSFETs 339
12.1 Shielded Trench-Gate Power MOSFET Structure......................340
12.1.1 Blocking Characteristics...................................................341
12.1.2Forward Conduction.........................................................342
12.1.3 Threshold Voltage............................................................348
12.2 Shielded Trench-Gate Power MOSFET: Simulations................348
12.2.1 Blocking Characteristics...................................................349
12.2.2 On-State Characteristics...................................................355
12.2.3 Output Characteristics......................................................357
12.3 Shielded Trench-Gate MOSFET: Experimental Results............358
12.4 Summary.....................................................................................360
References...................................................................................361
Chapter 13 Charge Coupled Structures 363
13.1 Charge Coupled Silicon Carbide Structures...............................364
13.2 Ideal Specific On-Resistance......................................................367
13.3 Charge Coupled Schottky Rectifier Structure.............................371
13.3.1 Blocking Characteristics...................................................372
13.3.2On-State Characteristics...................................................377
13.4 Enhanced Charge Coupled Schottky Rectifier Structure............379
13.4.1 Blocking Characteristics...................................................380
13.4.20n-State Characteristics...................................................385
13.4.3 Charge Optimization........................................................386
13.4.4 Charge Imbalance.............................................................390
13.5 Charge Coupled JFET Structure.................................................394
13.5.1 Blocking Characteristics...................................................396
13.5.20n-State Characteristics...................................................399
13.5.3 Output Characteristics......................................................403
13.6 Shielded Charge Coupled MOSFET Structure...........................404
13.6.1 Blocking Characteristics...................................................406
13.6.20n-State Characteristics...................................................410
13.6.3 Output Characteristics......................................................417
13.6.4Switching Characteristics.................................................418
13.7 Summary.....................................................................................421
References...................................................................................422
Contents
Chapter 14 Integral Diodes 425
14.1 Trench-Gate MOSFET Structure................................................427
14.2 Shielded Trench-Gate MOSFET Structure.................................433
14.3 Planar Shielded ACCUFET Structure........................................439
14.4 Charge Coupled MOSFET Structure..........................................441
14.5 Summary.....................................................................................444
References...................................................................................445
Chapter 15 Lateral High Voltage FETs 447
15.1 Fundamental Analysis.................................................................448
15.2 Lateral High Voltage Buried Junction FET Structure................450
15.3 Lateral High Voltage MESFET Structure...................................452
15.4 Lateral High Voltage MOSFET Structure..................................453
15.5 Lateral MOSFET Structure with Field Plates.............................457
15.6 Lateral High Voltage Shielded MOSFET Structure...................461
15.7 Lateral High Voltage MOSFET Structure Optimization............465
15.8 Lateral HV-MOSFET Structure: Experimental Results.............471
15.9 Summary.....................................................................................472
References...................................................................................474
Chapter 16 Synopsis 477
16.1 Typical Motor Control Application............................................478
16.2 Motor Control Application: Silicon IGBT and P-i-N Rectifier..483
16.3 Motor Control Application: Silicon IGBT and SiC Rectifier.....486
16.4 Motor Control Application: SiC MOSFET and Rectifier...........488
16.5 Motor Control Application: Comparison of Cases.....................489
16.6 Summary.....................................................................................490
References...................................................................................491
Index 493
|
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| indexdate | 2024-07-10T00:09:13Z |
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| language | English |
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| physical | XXI, 503 S. Ill., graph. Darst. 24 cm |
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| publisher | World Scientific |
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| spelling | Baliga, B. Jayant 1948- Verfasser (DE-588)136919014 aut Silicon carbide power devices B. Jayant Baliga Repr. New Jersey World Scientific 2009 XXI, 503 S. Ill., graph. Darst. 24 cm txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index Silicon carbide Electric properties Semiconductors Leistungselektronik (DE-588)4035235-3 gnd rswk-swf Elektronische Eigenschaft (DE-588)4235053-0 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Leistungselektronik (DE-588)4035235-3 s Siliciumcarbid (DE-588)4055009-6 s Elektronische Eigenschaft (DE-588)4235053-0 s DE-604 HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024546130&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Baliga, B. Jayant 1948- Silicon carbide power devices Silicon carbide Electric properties Semiconductors Leistungselektronik (DE-588)4035235-3 gnd Elektronische Eigenschaft (DE-588)4235053-0 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4035235-3 (DE-588)4235053-0 (DE-588)4055009-6 |
| title | Silicon carbide power devices |
| title_auth | Silicon carbide power devices |
| title_exact_search | Silicon carbide power devices |
| title_full | Silicon carbide power devices B. Jayant Baliga |
| title_fullStr | Silicon carbide power devices B. Jayant Baliga |
| title_full_unstemmed | Silicon carbide power devices B. Jayant Baliga |
| title_short | Silicon carbide power devices |
| title_sort | silicon carbide power devices |
| topic | Silicon carbide Electric properties Semiconductors Leistungselektronik (DE-588)4035235-3 gnd Elektronische Eigenschaft (DE-588)4235053-0 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Silicon carbide Electric properties Semiconductors Leistungselektronik Elektronische Eigenschaft Siliciumcarbid |
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