Holdings: Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties

Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties:

Physikalische Technik

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Bibliographic Details
Main Author:	Timm, Martin (Author)
Format:	Thesis Book
Language:	English
Published:	Wildau 2011
Subjects:	CBRAM Kupfertellurate Speicherzelle Temperaturbeständigkeit Hochschulschrift
Online Access:	Inhaltsverzeichnis
Summary:	Physikalische Technik
Physical Description:	45, II Blätter Illustrationen

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MARC


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Record in the Search Index

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spelling	Timm, Martin Verfasser aut Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties Wildau 2011 45, II Blätter Illustrationen txt rdacontent n rdamedia nc rdacarrier Bachelorarbeit Technische Hochschule P14/08(11) Physikalische Technik CBRAM (DE-588)7593606-9 gnd rswk-swf Kupfertellurate (DE-588)4166171-0 gnd rswk-swf Speicherzelle (DE-588)4182147-6 gnd rswk-swf Temperaturbeständigkeit (DE-588)4184690-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content CBRAM (DE-588)7593606-9 s Speicherzelle (DE-588)4182147-6 s Kupfertellurate (DE-588)4166171-0 s Temperaturbeständigkeit (DE-588)4184690-4 s DE-604 application/pdf http://wilbert.kobv.de/tocs/97078.pdf Inhaltsverzeichnis
spellingShingle	Timm, Martin Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties CBRAM (DE-588)7593606-9 gnd Kupfertellurate (DE-588)4166171-0 gnd Speicherzelle (DE-588)4182147-6 gnd Temperaturbeständigkeit (DE-588)4184690-4 gnd
subject_GND	(DE-588)7593606-9 (DE-588)4166171-0 (DE-588)4182147-6 (DE-588)4184690-4 (DE-588)4113937-9
title	Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties
title_auth	Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties
title_exact_search	Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties
title_full	Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties
title_fullStr	Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties
title_full_unstemmed	Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties
title_short	Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties
title_sort	layer stack design of cu te based cbram cells for optimizing their thermal stability and electrical switching properties
topic	CBRAM (DE-588)7593606-9 gnd Kupfertellurate (DE-588)4166171-0 gnd Speicherzelle (DE-588)4182147-6 gnd Temperaturbeständigkeit (DE-588)4184690-4 gnd
topic_facet	CBRAM Kupfertellurate Speicherzelle Temperaturbeständigkeit Hochschulschrift
url	http://wilbert.kobv.de/tocs/97078.pdf
work_keys_str_mv	AT timmmartin layerstackdesignofcutebasedcbramcellsforoptimizingtheirthermalstabilityandelectricalswitchingproperties

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