Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties:
Physikalische Technik
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Wildau
2011
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Zusammenfassung: | Physikalische Technik |
| Beschreibung: | 45, II Blätter Illustrationen |
Internformat
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| indexdate | 2024-07-10T00:08:26Z |
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| language | English |
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| spelling | Timm, Martin Verfasser aut Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties Wildau 2011 45, II Blätter Illustrationen txt rdacontent n rdamedia nc rdacarrier Bachelorarbeit Technische Hochschule P14/08(11) Physikalische Technik CBRAM (DE-588)7593606-9 gnd rswk-swf Kupfertellurate (DE-588)4166171-0 gnd rswk-swf Speicherzelle (DE-588)4182147-6 gnd rswk-swf Temperaturbeständigkeit (DE-588)4184690-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content CBRAM (DE-588)7593606-9 s Speicherzelle (DE-588)4182147-6 s Kupfertellurate (DE-588)4166171-0 s Temperaturbeständigkeit (DE-588)4184690-4 s DE-604 application/pdf http://wilbert.kobv.de/tocs/97078.pdf Inhaltsverzeichnis |
| spellingShingle | Timm, Martin Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties CBRAM (DE-588)7593606-9 gnd Kupfertellurate (DE-588)4166171-0 gnd Speicherzelle (DE-588)4182147-6 gnd Temperaturbeständigkeit (DE-588)4184690-4 gnd |
| subject_GND | (DE-588)7593606-9 (DE-588)4166171-0 (DE-588)4182147-6 (DE-588)4184690-4 (DE-588)4113937-9 |
| title | Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties |
| title_auth | Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties |
| title_exact_search | Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties |
| title_full | Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties |
| title_fullStr | Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties |
| title_full_unstemmed | Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties |
| title_short | Layer stack design of Cu-Te based CBRAM cells for optimizing their thermal stability and electrical switching properties |
| title_sort | layer stack design of cu te based cbram cells for optimizing their thermal stability and electrical switching properties |
| topic | CBRAM (DE-588)7593606-9 gnd Kupfertellurate (DE-588)4166171-0 gnd Speicherzelle (DE-588)4182147-6 gnd Temperaturbeständigkeit (DE-588)4184690-4 gnd |
| topic_facet | CBRAM Kupfertellurate Speicherzelle Temperaturbeständigkeit Hochschulschrift |
| url | http://wilbert.kobv.de/tocs/97078.pdf |
| work_keys_str_mv | AT timmmartin layerstackdesignofcutebasedcbramcellsforoptimizingtheirthermalstabilityandelectricalswitchingproperties |