Holdings: Semiconductor-on-insulator materials for nanoelectronics applications

Semiconductor-on-insulator materials for nanoelectronics applications:

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Bibliographic Details
Other Authors:	Nazarov, Alexei (Editor)
Format:	Book
Language:	German
Published:	Berlin [u.a.] Springer 2011
Series:	Engineering materials
Subjects:	MEMS CMOS SOI-Technik Nanoelektronik Halbleitersubstrat MOS-FET Aufsatzsammlung
Online Access:	Inhaltsverzeichnis
Physical Description:	IX, 447 S. Ill., graph. Darst.
ISBN:	9783642158674

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MARC


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adam_text	IMAGE 1 CONTENTS PART I NEW SEMICONDUCTOR-ON-INSULATOR MATERIALS GERMANIUM PROCESSING 3 H. GAMBLE, B. M. ARMSTRONG, P. T. BAINE, Y. H. LOW, P. V. RAINEY, S. J. N. MITCHELL AND D. W. MCNEILL LOW-TEMPERATURE FABRICATION OF GERMANIUM-ON-INSULATOR USING REMOTE PLASMA ACTIVATION BONDING AND HYDROGEN EXFOLIATION 31 C. A. COLINGE, K. Y. BYUN, I. P. FERAIN, R. YU AND M. GOORSKY ENGINEERING PSEUDOSUBSTRATES WITH POROUS SILICON TECHNOLOGY 47 N. P. BLANCHARD, A. BOUCHERIF, PH. REGRENY, A. DANESCU, H. MAGOARIEC, J. PENUELAS, V. LYSENKO, J.-M. BLUET, O. MARTY, G. GUILLOT AND G. GRENET CONFINED AND GUIDED VAPOR-LIQUID-SOLID CATALYTIC GROWTH OF SILICON NANORIBBONS: FROM NANOWIRES TO STRUCTURED SILICON-ON-INSULATOR LAYERS 67 A. LECESTRE, E. DUBOIS, A. VILLARET, T. SKOTNICKI, P. CORONEL, G. PATRIARCHE AND C. MAURICE SOI CMOS: A MATURE AND STILL IMPROVING TECHNOLOGY FOR RF APPLICATIONS 91 JEAN-PIERRE RASKIN BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1005646597 DIGITALISIERT DURCH IMAGE 2 VIUE CONTENTS PART II PHYSICS OF MODERN SEMOI DEVICES SILICON-BASED DEVICES AND MATERIALS FOR NANOSCALE FETS 123 FRANCIS BALESTRA FINFETS AND THEIR FUTURES 141 N. HORIGUCHI, B. PARVAIS, T CHIARELLA, N. COLLAERT, A. VELOSO, R. ROOYACKERS, P. VERHEYEN, L. WITTERS, A. REDOLFI, A. DE KEERSGIETER, S. BRUS, G. ZSCHAETZSCH, M. ERCKEN, E. ALTAMIRANO, S. LOCOROTONDO, M. DEMAND, M. JURCZAK, W. VANDERVORST, T. HOFFMANN AND S. BIESEMANS ULTRATHIN BODY SILICON ON INSULATOR TRANSISTORS FOR 22 NM NODE AND BEYOND 155 T. POIROUX, F. ANDRIEU, O. WEBER, C. FENOUILLET-BERANGER, C. BUJ-DUFOURNET, P. PERREAU, L. TOSTI, L. BREVARD AND O. FAYNOT ULTRATHIN N-CHANNEL AND P-CHANNEL SOI MOSFETS 169 F. GARNIZ, L. DONETTI, C. SAMPEDRO, A. GODOY, N. RODRIGUEZ AND F. JIMENEZ-MOLINOS JUNCTIONLESS TRANSISTORS: PHYSICS AND PROPERTIES 187 J. P. COLINGE, C. W. LEE, N. DEHDASHTI AKHAVAN, R. YAN, I. FERAIN, P. RAZAVI, A. KRANTI AND R. YU GATE MODULATED RESONANT TUNNELING TRANSISTOR (RT-FET): PERFORMANCE INVESTIGATION OF A STEEP SLOPE, HIGH ON-CURRENT DEVICE THROUGH 3D NON-EQUILIBRIUM GREEN FUNCTION SIMULATIONS 201 ARYAN AFZALIAN, JEAN-PIERRE COLINGE AND DENIS FIANDRE OHMIC AND SCHOTTKY CONTACT CNTFET: TRANSPORT PROPERTIES AND DEVICE PERFORMANCE USING SEMI-CLASSICAL AND QUANTUM PARTICLE SIMULATION 215 HUU-NHA NGUYEN, DAMIEN QUERLIOZ, ARNAUD BOURNEL, SYLVIE RETAILLEAU AND PHILIPPE DOLLFUS QUANTUM SIMULATION OF SILICON-NANOWIRE FETS 237 MARCO PALA SINGLE DOPANT AND SINGLE ELECTRON EFFECTS IN CMOS DEVICES 251 M. SANQUER, X. JEHL, M. PIERRE, B. ROCHE, M. VINET AND R. WACQUEZ IMAGE 3 CONTENTS IX PART HI DIAGNOSTICS OF THE SOI DEVICES SOI MOSFET TRANSCONDUCTANCE BEHAVIOR FROM MICRO TO NANO ERA 267 J. A. MARTINO, P. G. D. AGOPIAN, E. SIMOEN AND C. CLAEYS INVESTIGATION OF TRI-GATE FINFETS BY NOISE METHODS 287 N. LUKYANCHIKOVA, N. GARBAR, V. KUDINA, A. SMOLANKA, E. SIMOEN AND C. CLAEYS MOBILITY CHARACTERIZATION IN ADVANCED FD-SOI CMOS DEVICES 307 G. GHIBAUDO SPECIAL FEATURES OF THE BACK-GATE EFFECTS IN ULTRA-THIN BODY SOI MOSFETS 323 T. RUDENKO, V. KILCHYTSKA, J.-P. RASKIN, A. NAZAROV AND D. FIANDRE PART IV SENSORS AND MEMS ON MEMORY SOI SOI NANOWIRE TRANSISTORS FOR FEMTOMOLE ELECTRONIC DETECTORS OF SINGLE PARTICLES AND MOLECULES IN BIOLIQUIDS AND GASES 343 V. P. POPOV, O. V. NAUMOVA AND YU. D. IVANOV S E N S I NG A ND M E MS D E V I C ES IN T H I N - F I LM S OI M OS T E C H N O L O GY . . .. 3 55 J.-P. RASKIN, L. FRANCIS AND D. FIANDRE FLOATING-BODY SOI MEMORY: THE SCALING TOURNAMENT 393 M. BAWEDIN, S. CRISTOLOVEANU, A. HUBERT, K. H. PARK AND F. MARTINEZ PART V AFTERWORD A SELECTION OF SOI PUZZLES AND TENTATIVE ANSWERS 425 S. CRISTOLOVEANU, M. BAWEDIN, K.-I. NA, W. VAN DEN DAELE, K.-H. PARK, L. PHAM-NGUYEN, J. WAN, K. TACHI, S.-J. CHANG, I. IONICA, A. DIAB, Y.-H. BAE, J. A. CHROBOCZEK, A. OHATA, C. FENOUILLET-BERANGER, T. ERNST, E. AUGENDRE, C. LE ROYER, A. ZASLAVSKY AND H. IWAI INDEX 443
any_adam_object	1
author2	Nazarov, Alexei
author2_role	edt
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author_facet	Nazarov, Alexei
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dewey-search	621.38152
dewey-sort	3621.38152
dewey-tens	620 - Engineering and allied operations
discipline	Elektrotechnik / Elektronik / Nachrichtentechnik
format	Book
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indexdate	2024-07-09T23:23:42Z
institution	BVB
isbn	9783642158674
language	German
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physical	IX, 447 S. Ill., graph. Darst.
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spelling	Semiconductor-on-insulator materials for nanoelectronics applications Alexei Nazarov ... (eds.) Berlin [u.a.] Springer 2011 IX, 447 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Engineering materials MEMS (DE-588)4824724-8 gnd rswk-swf CMOS (DE-588)4010319-5 gnd rswk-swf SOI-Technik (DE-588)4128029-5 gnd rswk-swf Nanoelektronik (DE-588)4732034-5 gnd rswk-swf Halbleitersubstrat (DE-588)4158813-7 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content Nanoelektronik (DE-588)4732034-5 s SOI-Technik (DE-588)4128029-5 s Halbleitersubstrat (DE-588)4158813-7 s MOS-FET (DE-588)4207266-9 s CMOS (DE-588)4010319-5 s MEMS (DE-588)4824724-8 s DE-604 Nazarov, Alexei edt DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=022561338&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Semiconductor-on-insulator materials for nanoelectronics applications MEMS (DE-588)4824724-8 gnd CMOS (DE-588)4010319-5 gnd SOI-Technik (DE-588)4128029-5 gnd Nanoelektronik (DE-588)4732034-5 gnd Halbleitersubstrat (DE-588)4158813-7 gnd MOS-FET (DE-588)4207266-9 gnd
subject_GND	(DE-588)4824724-8 (DE-588)4010319-5 (DE-588)4128029-5 (DE-588)4732034-5 (DE-588)4158813-7 (DE-588)4207266-9 (DE-588)4143413-4
title	Semiconductor-on-insulator materials for nanoelectronics applications
title_auth	Semiconductor-on-insulator materials for nanoelectronics applications
title_exact_search	Semiconductor-on-insulator materials for nanoelectronics applications
title_full	Semiconductor-on-insulator materials for nanoelectronics applications Alexei Nazarov ... (eds.)
title_fullStr	Semiconductor-on-insulator materials for nanoelectronics applications Alexei Nazarov ... (eds.)
title_full_unstemmed	Semiconductor-on-insulator materials for nanoelectronics applications Alexei Nazarov ... (eds.)
title_short	Semiconductor-on-insulator materials for nanoelectronics applications
title_sort	semiconductor on insulator materials for nanoelectronics applications
topic	MEMS (DE-588)4824724-8 gnd CMOS (DE-588)4010319-5 gnd SOI-Technik (DE-588)4128029-5 gnd Nanoelektronik (DE-588)4732034-5 gnd Halbleitersubstrat (DE-588)4158813-7 gnd MOS-FET (DE-588)4207266-9 gnd
topic_facet	MEMS CMOS SOI-Technik Nanoelektronik Halbleitersubstrat MOS-FET Aufsatzsammlung
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=022561338&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
work_keys_str_mv	AT nazarovalexei semiconductoroninsulatormaterialsfornanoelectronicsapplications

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