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IGBT Modules: technologies, driver and application

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Bibliographische Detailangaben
Hauptverfasser:	Volke, Andreas (VerfasserIn), Hornkamp, Michael (VerfasserIn)
Format:	Buch
Sprache:	English
Veröffentlicht:	Munich Infineon Technologies 2011
Ausgabe:	1. ed.
Schlagworte:	IGBT
Online-Zugang:	Inhaltsverzeichnis
Beschreibung:	Literaturangaben
Beschreibung:	534 S. Ill., graph. Darst.
ISBN:	9783000320767

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MARC


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020			\|a 9783000320767 \|c Gb. : EUR 179.00 (DE), EUR 167.29 (AT) \|9 978-3-00-032076-7
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245	1	0	\|a IGBT Modules \|b technologies, driver and application \|c Andreas Volke ; Michael Hornkamp
250			\|a 1. ed.
264		1	\|a Munich \|b Infineon Technologies \|c 2011
300			\|a 534 S. \|b Ill., graph. Darst.
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
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500			\|a Literaturangaben
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Datensatz im Suchindex

_version_	1804143937825275904
adam_text	1 POWER SEMICONDUCTORS ........................................................................................... 1 1.1 INTRODUCTION ........................................................................................................ 1 1.1.1 INTRINSIC CHARGE CARRIER CONCENTRATION ........................................................... 2 1.1.2 DOPING ........................................................................................................ 6 1.1.3 CHARGE CARRIER MOVEMENT IN THE SEMICONDUCTOR .......................................... 8 1.1.4 CHARGE CARRIER GENERATION AND RECOMBINATION ............................................ 11 1.1.5 PN-JUNCTION ................................................................................................. 13 1.1.6 BREAKDOWN ................................................................................................. 17 1.1.7 MANUFACTURING PROCESS .............................................................................. 18 1.2 DIODES ............................................................................................................... 23 1.2.1 FAST RECOVERY DIODES ................................................................................. 24 1.2.2 MAINS (RECTIFIER) DIODES .............................................................................. 26 1.2.3 SCHOTTKY DIODES ......................................................................................... 26 1.2.4 Z-DIODES AND AVALANCHE DIODES ................................................................. 28 1.3 THYRISTORS .......................................................................................................... 30 1.4 BIPOLAR JUNCTION AND FIELD EFFECT TRANSISTORS ....................................................... 31 1.4.1 BIPOLAR JUNCTION TRANSISTORS (BJTS) ............................................................. 31 1.4.2 FIELD EFFECT TRANSISTORS (FETS) .................................................................... 34 1.4.2.1 JUNCTION FIELD EFFECT TRANSISTORS (JFETS) .............................................. 34 1.4.2.2 METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS) .......... 35 1.4.2.3 SUPERJUNCTION MOSFETS .................................................................... 38 1.5 INSULATED GATE BIPOLAR TRANSISTORS (IGBTS) ....................................................... 39 1.5.1 PUNCH THROUGH (PT) IGBTS ........................................................................ 46 1.5.2 NON-PUNCH THROUGH (NPT) IGBTS .............................................................. 48 1.5.3 FIELDSTOP (FS) IGBTS ................................................................................. 49 1.5.4 TRENCH IGBTS ............................................................................................ 50 1.5.5 CSTBTYY ................................................................................................... 52 1.5.6 LEGTS ........................................................................................................ 53 1.5.7 TRENCH-FS IGBTS....................................................................................... 54 1.5.8 RC IGBTS .................................................................................................. 55 1.5.9 INTEGRATED ADDITIONAL FUNCTIONS ................................................................... 55 1.6 OUTLOOK ............................................................................................................. 58 1.7 MANUFACTURERS ................................................................................................... 62 1.8 REFERENCES ..................................................................................... 63 2 CONSTRUCTION OF IGBT COMPONENTS ...................................................................... 66 2.1 INTRODUCTION ....................................................................................................... 66 2.2 MATERIALS FOR THE CONSTRUCTION OF IGBT MODULES ................................. 67 2.2.1 PLASTIC FRAME .............................................................................................. 68 2.2.2 SUBSTRATES .................................................................................................. 69 2.2.3 BASEPLATE ................................................................................................... 71 2.2.4 MOULDING COMPOUND, EPOXY RESIN AND SILICONE GELS ................................... 72 2.3 ELECTRICAL BONDING TECHNOLOGY ........................................................................... 74 2.3.1 INTERNAL CONNECTION TECHNOLOGY .................................................................. 74 2.3.1.1 CHIP SOLDERING ..................................................................................... 75 2.3.1.2 SYSTEM SOLDERING ................................................................................ 75 2.3.1.3 ULTRASONIC BONDING .............................................................................. 75 2.3.1.4 SOLDERING ............................................................................................ 78 2.3.1.5 ULTRASONIC WELDING .............................................................................. 79 2.3.1.6 LOW TEMPERATURE JOINING ..................................................................... 82 2.3.1.7 DIFFUSION SOLDERING .............................................................................. 82 2.3.2 EXTERNAL BONDING TECHNOLOGY .................................................................... 83 2.3.2.1 THE FRITTING EFFECT ............................................................................... 83 2.3.2.2 SCREW CONNECTION ................................................................................ 84 2.3.2.3 SOLDER CONNECTION ............................................................................... 86 2.3.2.4 PLUG CONNECTIONS ................................................................................. 87 2.3.2.5 PRESS-IN TECHNOLOGY ............................................................................. 88 2.3.2.6 SPRING CONTACT ..................................................................................... 92 2.4 DESIGN CONCEPTS ................................................................................................ 94 2.4.1 STANDARD IGBT MODULES ............................................................................. 94 2.4.2 PRESS PACK IGBTS ...................................................................................... 94 2.4.3 INTELLIGENT POWER MODULES (IPMS) .............................................................. 95 2.4.4 IGBT MOULDED MODULES .............................................................................. 97 2.4.5 DISCRETE IGBTS ........................................................................................... 99 2.4.6 STACKS ........................................................................................................ 99 2.5 INTERNAL PARALLEL CONNECTION OF SEMICONDUCTORS ................................................. 100 2.6 LOW INDUCTANCE DESIGN .................................................................................... 103 2.7 CIRCUIT TOPOLOGIES IN IGBT MODULES ................................................................. 104 2.8 INSULATION COORDINATION .................................................................................... 107 2.8.1 CLEARANCE AND CREEPAGE DISTANCES .......................................................... 108 2.8.2 INSULATION VOLTAGE ..................................................................................... 111 2.8.3 PARTIAL DISCHARGE ..................................................................................... 112 2.9 OVERVIEW OF MANUFACTURES ............................................................................... 113 2.10 REFERENCES ................................................................................................. 114 3 ELECTRICAL PROPERTIES ............................................................................................ 117 3.1 INTRODUCTION ..................................................................................................... 117 3.1.1 DEFINITION OF TERMS .................................................................................... 118 3.1.1.1 VOLTAGES ............................................................................................ 118 3.1.1.2 CURRENTS ............................................................................................ 119 3.1.1.3 TIMES ................................................................................................ 119 3.1.1.4 TEMPERATURES .................................................................................... 121 3.1.1.5 ENERGIES ............................................................................................ 122 3.1.1.6 MODULATION FACTOR ............................................................................... 125 3.2 FORWARD CHARACTERISTICS OF THE DIODE .............................................................. 127 3.3 DIODE SWITCHING CHARACTERISTICS ....................................................................... 130 3.3.1 DIODE TURN-ON ........................................................................................... 130 3.3.2 DIODE TURN-OFF ........................................................................................... 132 3.4 IGBT FORWARD CHARACTERISTICS ........................................................................... 137 3.4.1 FORWARD CHARACTERISTICS AT LOW TEMPERATURES ............................................ 139 3.5 IGBT SWITCHING CHARACTERISTICS ........................................................................ 140 3.5.1 IGBT TURN-ON ............................................................................................ 140 3.5.2 IGBT TURN-OFF ............................................................................................ 143 3.5.3 GATE CHARGE AND MILLER EFFECT ................................................................... 145 3.5.4 TURN-OFF BEHAVIOUR NPT VERSUS TRENCH IGBT SWITCHING CHARACTERISTICS .147 3.6 SHORT CIRCUIT BEHAVIOUR ..................................................................................... 147 3.7 BLOCKING BEHAVIOUR .......................................................................................... 151 3.8 STATIC AND DYNAMIC AVALANCHE BREAKDOWN ..................................................... 152 3.9 STRAY INDUCTANCE .............................................................................................. 155 3.10 DIFFERENT MANUFACTURING SOURCES .................................................................. 158 3.11 REFERENCES .................................................................................................. 159 4 THERMAL PRINCIPLES ............................................................................................... 161 4.1 INTRODUCTION .................................................................................................... 161 4.1.1 DEFINITIONS ............................................................................................... 161 4.1.1.1 TEMPERATURES .................................................................................. 161 4.1.1.2 POWER .............................................................................................. 161 4.1.1.3 THERMAL RESISTANCES AND IMPEDANCES ............................................. 162 4.1.2 THERMAL CONDUCTION ................................................................................ 163 4.1.2.1 THERMAL RESISTANCE ........................................................................... 163 4.1.2.2 THERMAL CAPACITY ............................................................................. 164 4.1.2.3 THERMAL IMPEDANCE .......................................................................... 166 4.1.2.4 THERMAL LATERAL SPREAD ...................................................................... 167 4.1.3 THERMAL RADIATION ..................................................................................... 169 4.1.4 CONVECTION ............................................................................................... 172 4.2 MATERIALS AND THEIR THERMAL PROPERTIES ............................................................. 173 4.2.1 THERMAL INTERFACE MATERIAL (TIM) ............................................................ 176 4.3 THERMAL MODEL ................................................................................................ 178 4.4 HEATSINK .......................................................................................................... 185 4.4.1 AIR COOLERS ................................................................................................ 186 4.4.2 LIQUID COOLING SYSTEM .............................................................................. 187 4.5 REFERENCES ..................................................................................................... 190 5 MODULE DATASHEET ................................................................................................ 191 5.1 INTRODUCTION ..................................................................................................... 191 5.2 IGBT ............................................................................................................... 192 5.3 FREEWHEELING DIODES ....................................................................................... 195 5.4 RECTIFIER DIODES (PIM/CIB MODULES) ................................................................ 196 5.5 BRAKE CHOPPER (PIM/CIB MODULES) ................................................................. 197 5.6 NTC RESISTOR (OPTIONAL) .................................................................................... 197 5.7 MODULE ............................................................................................................ 198 5.8 DIAGRAMS ........................................................................................................ 199 5.9 CIRCUIT TOPOLOGIES ........................................................................................... 200 5.10 PACKAGE (CASE) DRAWING ............................................................................. 200 5.11 REFERENCES .................................................................................................. 201 6 IGBT DRIVER ....................................................................... 202 6.1 INTRODUCTION ..................................................................................................... 202 6.2 SIGNAL TRANSMISSION ........................................................................................ 203 6.2.1 LEVEL SHIFTER ............................................................................................ 204 6.2.2 OPTOCOUPLERS .......................................................................................... 208 6.2.3 PULSE TRANSFORMERS .................................................................................. 210 6.2.4 CAPACITIVE COUPLERS ................................................................................ 213 6.2.5 FIBRE OPTICS ............................................................................................. 214 6.2.6 SUMMARY ................................................... 216 6.3 IGBT GATE DRIVES ............................................................................................ 217 6.3.1 VOLTAGE SOURCE DRIVERS ............................................................................ 218 6.3.1.1 H-BRIDGE CIRCUIT ................................................................................ 218 6.3.1.2 EMITTER FOLLOWER IN THE GATE PATH ...................................................... 219 6.3.1.3 EMITTER FOLLOWER IN THE EMITTER PATH .................................................. 221 6.3.1.4 MOSFET PUSH-PULL GATE DRIVES ........................................................ 222 6.3.1.5 MOSFET SOURCE FOLLOWERS ............................................................... 224 6.3.1.6 N-CHANNEL PUSH-PULL DRIVES ............................................................... 225 6.3.1.7 IGBT GATE BOOSTING .......................................................................... 226 6.3.1.8 DESIGN OF THE GATE DRIVES ................................................................. 227 6.4 DRIVER VOLTAGE SUPPLY ....................................................................................... 229 6.4.1 BOOTSTRAP CIRCUIT ...................................................................................... 230 6.4.2 DC/DC CONVERTERS ................................................................................... 233 6.4.2.1 FLYBACK CONVERTERS ........................................................................... 234 6.4.2.2 PUSH-PULL CONVERTERS ........................................................................ 236 6.4.2.3 PUSH-PULL CONVERTERS IN HALF-BRIDGE CONFIGURATION ............................. 236 6.4.3 UNDER-VOLTAGE LOCK-OUT (UVLO) ............................................................... 237 6.5 COUPLING CAPACITANCES .................................................................................... 238 6.6 INFLUENCING THE SWITCHING BEHAVIOUR ................................................................. 240 6.6.1 GATE RESISTOR ............................................................................................ 240 6.6.2 EXTERNAL GATE-EMITTER CAPACITOR CO .......................................................... 243 6.6.3 GATE LEAD INDUCTANCE .............................................................................. 246 6.7 PROTECTIVE MEASURES ...................................................................................... 247 6.7.1 UCESAT MONITORING .................................................................................... 247 6.7.1.1 INADVERTENT TRIPPING OF THE UCESAT MONITORING ..................................... 254 6.7.1.2 UCESAT MONITORING WITH CAPACITIVE LOADS ............................................ 255 6.7.2 COLLECTOR-EMITTER CLAMPING (ACTIVE CLAMPING) ........................................ 256 6.7.2.1 CONDITIONAL ACTIVE CLAMPING ............................................................ 260 6.7.2.2 DYNAMIC VOLTAGE RISE CONTROL (DVRC) ............................................... 263 6.7.2.3 DYNAMIC ACTIVE CLAMPING ................................................................ 267 6.7.3 GATE CLAMPING ......................................................................................... 269 6.7.4 MILLER CLAMPING ........................................................................................ 273 6.7.5 UTILISING THE PARASITIC EMITTER INDUCTANCE .................................................. 275 6.7.6 TWO-LEVEL TURN-OFF (TLTO) ........................................................................ 276 6.7.7 SOFT SHUTDOWN ......................................................................................... 278 6.8 LOGIC FUNCTIONS ............................................................................................... 279 6.8.1 MINIMUM PULSE SUPPRESSION .................................................................... 280 6.8.2 DEAD-TIME GENERATION AND HALF-BRIDGE INTERLOCKING .................................. 280 6.8.3 ERROR MESSAGES, BLOCKING TIMES AND FAULT MEMORY ................................... 281 6.9 SAFE STOP ........................................................................................................ 282 6.10 PARALLEL AND SERIES CONNECTION ................................................................... 284 6.10.1 CONNECTION IN PARALLEL .............................................................................. 284 6.10.2 CONNECTION IN SERIES ................................................................................ 285 6.11 THREE-LEVEL NPC CIRCUITS ............................................................................. 286 6.12 SELECTING A DRIVER BY PERFORMANCE AND COST ................................................ 287 6.13 OVERVIEW OF MANUFACTURERS .......................................................................... 287 6.14 REFERENCES .................................................................................................. 288 7 SWITCHING BEHAVIOUR IN THE APPLICATION ............................................................ 290 7.1 INTRODUCTION .................................................................................................... 290 7.2 IGBT CONTROL VOLTAGE ...................................................................................... 290 7.2.1 POSITIVE CONTROL VOLTAGE .......................................................................... 290 7.2.2 NEGATIVE CONTROL VOLTAGE AND SWITCHING WITH 0V ..................................... 291 7.2.2.1 PARASITIC TURN-ON CAUSED BY THE MILLER CAPACITANCE ......................... 293 7.2.2.2 PARASITIC TURN-ON CAUSED BY THE EMITTER STRAY INDUCTANCE ................ 294 7.3 MINIMAL ON-TIMES ............................................................................................. 295 7.4 DEAD-TIME (INTERLOCK DELAY TIME) ...................................................................... 297 7.5 SWITCHING SPEEDS ............................................................................................ 299 7.6 TURNING OFF SHORT CIRCUITS .................................................................................. 301 7.7 INFLUENCE OF THE STRAY INDUCTANCE ..................................................................... 306 7.7.1 STRAY INDUCTANCE IN THE COMMUTATION PATH .............................................. 306 7.7.2 STRAY INDUCTANCE IN THE GATE PATH ........................................................... 308 7.8 SAFE OPERATING AREA (SOA) ............................................................................ 310 7.8.1 IGBT RBSOAAND SCSOA ..................................................................... 310 7.8.2 DIODE SOA ............................................................................................... 311 7.9 IGBT REVERSE BLOCKING VOLTAGE ....................................................................... 312 7.10 SI IGBT WITH SIC FREEWHEELING DIODE .......................................................... 312 7.11 LOAD REDUCED SWITCHING AND (QUASI-) RESONANT SWITCHING ........................... 315 7.11.1 OPERATION WITH A SNUBBER ........................................................................ 316 7.11.2 RESONANT SWITCHING ................................................................................. 321 7.12 REFERENCES ................................................................................................. 323 8 CONNECTING IGBT MODULES IN PARALLEL AND IN SERIES ........................................ 324 8.1 INTRODUCTION .................................................................................................... 324 8.2 PARALLEL CONNECTION ......................................................................................... 325 8.2.1 NOTES ON STATIC OPERATION ........................................................................ 326 8.2.2 NOTES ON DYNAMIC OPERATION ................................................................... 329 8.2.3 GATE DRIVE IN PARALLEL CONNECTION ............................................................. 334 8.2.3.1 DIRECT GATE DRIVE IN PARALLEL CONNECTION ............................................ 334 8.2.3.2 INDIRECT GATE DRIVE IN PARALLEL CONNECTION .......................................... 337 8.2.3.3 GALVANICALLY ISOLATED GATE DRIVE IN PARALLEL CONNECTION ..................... 339 8.2.4 BALANCING IN PARALLEL CONNECTION THROUGH EXTERNAL COMPONENTS ............ 341 8.3 SERIES CONNECTION ........................................................................................... 344 8.4 REFERENCES ..................................................................................................... 348 9 RF OSCILLATIONS..................................................................................................... 349 9.1 INTRODUCTION ..................................................................................................... 349 9.2 SHORT CIRCUIT OSCILLATIONS ................................................................................. 350 9.3 OSCILLATIONS DURING IGBT TURN-OFF .................................................................... 351 9.4 TAIL CURRENT OSCILLATIONS .................................................................................. 352 9.5 REFERENCES ..................................................................................................... 355 10 MECHANICAL HANDLING AND MOUNTING ............................................................... 356 10.1 INTRODUCTION.................................................................................................. 356 10.2 CONNECTION TECHNIQUES .............................................................................. 356 10.2.1 ELECTRICAL CONNECTIONS .............................................................................. 356 10.2.2 HEATSINK ASSEMBLY AND THERMAL GREASE .................................................... 357 10.2.3 MOUNTING DIRECTLY COOLED MODULES ........................................................... 363 10.3 ENVIRONMENTAL INFLUENCES ........................................................................... 365 10.3.1 MECHANICAL LOADS ................................................................................... 365 10.3.2 GASES AND FLUIDS ................................................................................... 366 10.4 TRANSPORT AND STORAGE ................................................................................ 367 10.5 REFERENCES .................................................................................................. 368 11 BASIC CIRCUITS AND APPLICATION EXAMPLES ...................................................... 369 11.1 INTRODUCTION .................................................................................................. 369 11.2 AC/DC RECTIFIER AND BRAKE CHOPPER ............................................................... 371 11.2.1 ACTIVE FRONT END (AFE) ........................................................................... 378 11.2.2 VIENNA RECTIFIER ...................................................................................... 380 11.3 DC/DC CONVERTER ....................................................................................... 382 11.3.1 BUCK CONVERTER ........................................................................................ 382 11.3.2 BOOST CONVERTER ....................................................................................... 384 11.3.3 BUCK-BOOST CONVERTER .............................................................................. 385 11.3.4 H-BRIDGE .................................................................................................. 387 11.4 DC/AC INVERTER ............................................................................................ 388 11.4.1 VOLTAGE SOURCE INVERTER (VSI) .................................................................. 388 11.4.2 MULTI-LEVEL INVERTER ................................................................................... 391 11.4.3 CURRENT SOURCE INVERTER (CSI) .................................................................. 396 11.4.4 Z-INVERTER ................................................................................................. 397 11.5 AC/AC CONVERTER ......................................................................................... 402 11.6 SAMPLE APPLICATIONS ................................................................................... 404 11.6.1 SERVO DRIVES ........................................................................................... 404 11.6.2 UNINTERRUPTIBLE POWER SUPPLY (UPS) ........................................................ 405 11.6.3 SOLAR POWER INVERTER ................................................................................ 407 11.6.4 WIND POWER INVERTER ................................................................................ 408 11.6.5 TRACTION INVERTER ...................................................................................... 410 11.6.6 SWITCHED RELUCTANCE MOTOR ..................................................................... 412 11.6.7 MEDIUM-VOLTAGE INVERTER .......................................................................... 413 11.7 REFERENCES ................................................................................................. 414 12 MEASUREMENTS AND SIGNAL ELECTRONICS ............................................................. 416 12.1 INTRODUCTION ................................................................................................. 416 12.2 DIGITAL STORAGE OSCILLOSCOPE (DSO) ............................................................. 416 12.3 MEASURING CURRENT ....................................................................................... 419 12.3.1 NON-MAGNETIC MEASUREMENT OF CURRENT .................................................. 420 12.3.1.1 CURRENT MEASURING RESISTORS (SHUNTS) ............................................. 420 12.3.1.2 CURRENT SENSE IGBTS ....................................................................... 425 12.3.1.3 SIGMA/DELTA-ADC ............................................................................. 426 12.3.2 MAGNETIC MEASUREMENT OF CURRENT .......................................................... 431 12.3.2.1 CURRENT TRANSFORMERS (CT) ................................................................ 432 12.3.2.2 ROGOWSKI COIL ................................................................................... 433 12.3.2.3 HALL SENSORS ..................................................................................... 435 12.4 MEASURING VOLTAGE ...................................................................................... 440 12.5 MEASURING TEMPERATURE ............................................................................... 443 12.6 DOUBLE PULSE TEST ........................................................................................ 450 12.7 REFERENCES ................................................................................................. 454 13 INVERTER DESIGN ................................................................................................. 456 13.1 INTRODUCTION ................................................................................................. 456 13.2 FUNCTIONAL INVERTER COMPONENTS .................................................................. 456 13.3 VOLTAGE RATINGS ............................................................................................ 458 13.4 PARASITIC COMPONENTS .................................................................................. 459 13.5 DC-BUS ........................................................................................................ 460 13.6 SNUBBER CAPACITORS ..................................................................................... 463 13.7 POSITIONING THE DRIVER UNIT ............................................................................ 466 13.8 CLEARANCE AND CREEPAGE DISTANCES ............................................................ 468 13.9 INFLUENCE OF LONG MOTOR CABLES .................................................................... 468 13.10 FILTERS .......................................................................................................... 472 13.10.1 MAINS FILTER ........................................................................................... 473 13.10.2 DC-BUS FILTER ......................................................................................... 473 13.10.3 OUTPUT FILTER .......................................................................................... 474 13.11 FUSES .......................................................................................................... 476 13.12 INFLUENCE OF THE MODULATION ALGORITHM ........................................................ 479 13.13 FUNDAMENTAL EQUATIONS .............................................................................. 484 13.13.1 INPUT RECTIFIER ....................................................................................... 484 13.13.2 OUTPUT INVERTER .................................................................................... 484 13.13.3 DC-BUS ................................................................................................ 485 13.14 REFERENCES ................................................................................................. 485 14 QUALITY AND RELIABILITY ...................................................................................... 487 14.1 INTRODUCTION................................................................................................. 487 14.1.1 FAILURE RATE, FIT, MTBF AND PPM ............................................................ 487 14.2 FAILURE MECHANISMS IN THE APPLICATION ....................................................... 489 14.3 ACCELERATION MODELS ................................................................................... 490 14.4 TYPE TESTS AND ROUTINE TESTS ....................................................................... 496 14.4.1 HTRB TEST ............................................................................................... 497 14.4.2 HTGS TEST .............................................................................................. 498 14.4.3 H3TRB TEST ............................................................................................. 498 14.4.4 TST ................................................................................................... 499 14.4.5 TC TEST ................................................................................................... 499 14.4.6 PC TEST .................................................................................................... 501 14.5 MEASURES TO IMPROVE THE LOAD CYCLE CAPABILITY ........................................... 504 14.5.1 MATCHING THE CTE VALUES ........................................................................ 504 14.5.2 DCB ......................................................................................................... 504 14.5.3 LOW TEMPERATURE JOINING ......................................................................... 505 14.5.4 DIFFUSION SOLDERING FOR THE CHIP SOLDER LAYER ............................................ 507 14.5.5 IMPROVED SYSTEM SOLDER LAYER ................................................................. 507 14.5.6 DIRECT BOND CERAMICS TO BASEPLATE .......................................................... 508 14.5.7 COPPER BOND WIRES .................................................................................. 509 14.6 LIFETIME CALCULATION ...................................................................................... 511 14.7 FAILURE IMAGES ............................................................................................. 515 14.7.1 FAILURE IMAGES OF PROCESS ENGINEERING AND MECHANICS .......................... 515 14.7.2 ELECTRICALLY AND THERMALLY INDUCED FAILURE IMAGES ..................................... 517 14.8 COSMIC PARTICLE RADIATION ............................................................................ 517 14.9 REFERENCES .................................................................................................. 520 ABBREVIATIONS ............................................................................................................ 522 INDEX ........................................................................................................................... 525
any_adam_object	1
author	Volke, Andreas Hornkamp, Michael
author_GND	(DE-588)143791052 (DE-588)143791095
author_facet	Volke, Andreas Hornkamp, Michael
author_role	aut aut
author_sort	Volke, Andreas
author_variant	a v av m h mh
building	Verbundindex
bvnumber	BV037299359
classification_rvk	ZN 4850
classification_tum	ELT 318f
ctrlnum	(OCoLC)711874055 (DE-599)DNB1009232061
dewey-full	621.38152
dewey-hundreds	600 - Technology (Applied sciences)
dewey-ones	621 - Applied physics
dewey-raw	621.38152
dewey-search	621.38152
dewey-sort	3621.38152
dewey-tens	620 - Engineering and allied operations
discipline	Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik
edition	1. ed.
format	Book
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illustrated	Illustrated
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institution	BVB
isbn	9783000320767
language	English
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physical	534 S. Ill., graph. Darst.
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publisher	Infineon Technologies
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spelling	Volke, Andreas Verfasser (DE-588)143791052 aut IGBT Modules technologies, driver and application Andreas Volke ; Michael Hornkamp 1. ed. Munich Infineon Technologies 2011 534 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben IGBT (DE-588)4273802-7 gnd rswk-swf IGBT (DE-588)4273802-7 s DE-604 Hornkamp, Michael Verfasser (DE-588)143791095 aut DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=021211790&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Volke, Andreas Hornkamp, Michael IGBT Modules technologies, driver and application IGBT (DE-588)4273802-7 gnd
subject_GND	(DE-588)4273802-7
title	IGBT Modules technologies, driver and application
title_auth	IGBT Modules technologies, driver and application
title_exact_search	IGBT Modules technologies, driver and application
title_full	IGBT Modules technologies, driver and application Andreas Volke ; Michael Hornkamp
title_fullStr	IGBT Modules technologies, driver and application Andreas Volke ; Michael Hornkamp
title_full_unstemmed	IGBT Modules technologies, driver and application Andreas Volke ; Michael Hornkamp
title_short	IGBT Modules
title_sort	igbt modules technologies driver and application
title_sub	technologies, driver and application
topic	IGBT (DE-588)4273802-7 gnd
topic_facet	IGBT
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=021211790&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
work_keys_str_mv	AT volkeandreas igbtmodulestechnologiesdriverandapplication AT hornkampmichael igbtmodulestechnologiesdriverandapplication

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