Transport in metal-oxide-semiconductor structures: mobile ions effects on the oxide properties
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2011
|
| Schriftenreihe: | Engineering materials
|
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XIII, 104 S. graph. Darst. |
| ISBN: | 9783642163036 9783642163043 |
Internformat
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| 100 | 1 | |a Bentarzi, Hamid |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Transport in metal-oxide-semiconductor structures |b mobile ions effects on the oxide properties |c Hamid Bentarzi |
| 246 | 1 | 3 | |a Transport in metal oxide semiconductor structures |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2011 | |
| 300 | |a XIII, 104 S. |b graph. Darst. | ||
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| 650 | 0 | 7 | |a Siliciumdioxid |0 (DE-588)4077447-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionenleitung |0 (DE-588)4162322-8 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
| 689 | 0 | 1 | |a Siliciumdioxid |0 (DE-588)4077447-8 |D s |
| 689 | 0 | 2 | |a Ionenleitung |0 (DE-588)4162322-8 |D s |
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Datensatz im Suchindex
| _version_ | 1805095574679060480 |
|---|---|
| adam_text |
IMAGE 1
CONTENTS
1 INTRODUCTION 1
REFERENCES 4
2 THE MOS STRUCTURE 5
2.1 INTRODUCTION 5
2.2 A SIMPLE PHYSICAL APPROACH APPLIED TO MOS STRUCTURE 5 2.2.1 BASIC
CONCEPTS AND QUANTITIES 6
2.2.2 DEFINITION OF POTENTIALS 7
2.3 IDEAL MOS CAPACITOR 7
2.3.1 ACCUMULATION 8
2.3.2 DEPLETION 9
2.3.3 INVERSION 11
2.4 THE ACTUAL (NON-IDEAL) MOS STRUCTURE 13
2.4.1 THE METAL-SILICON WORK FUNCTION DIFFERENCE 13 2.4.2 EFFECT OF THE
CHARGE DISTRIBUTED IN THE OXIDE 14
REFERENCES 15
3 THE MOS OXIDE AND ITS DEFECTS 17
3.1 INTRODUCTION 17
3.2 OXIDE GROWTH TECHIQUES 17
3.3 THERMAL OXIDATION 18
3.3.1 DRY OXIDATION 19
3.3.2 WET OXIDATION 20
3.4 ANODIC OXIDATION 21
3.5 RAPID THERMAL OXIDATION 21
3.6 MOS OXIDE DEFECTS 21
3.6.1 THE INTERFACE TRAPPED CHARGE 22
3.6.2 THE FIXED OXIDE CHARGE 24
3.6.3 THE OXIDE TRAPPED CHARGE 25
3.6.4 THE MOBILE IONIC CHARGE 26
REFERENCES 27
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1006507914
DIGITALISIERT DURCH
IMAGE 2
I CONTENTS
REVIEW OF TRANSPORT MECHANISM IN THIN OXIDES OF MOS DEVICES 29
4.1 INTRODUCTION 29
4.2 ELECTRONIC CONDUCTION 29
4.2.1 THE SCHOTTKY (OR THERMIONIC) CONDUCTION 30
4.2.2 THE TUNNELING CONDUCTION 30
4.2.3 THE FOWLER-NORDHEIM CONDUCTION 32
4.2.4 THE FRENKEL-POOLE CONDUCTION 32
4.2.5 THE HOPPING CONDUCTION 32
4.2.6 THE SPACE CHARGE-LIMITED CURRENT 33
4.3 IONIC CONDUCTION 34
4.3.1 IONIC CURRENT TRANSPORT EQUATION 35
4.4 SUMMARY 35
REFERENCES 36
EXPERIMENTAL TECHNIQUES 39
5.1 INTRODUCTION 39
5.2 HIGH FREQUENCY MOS C-V MEASUREMENT UNDER BTS 41 5.2.1 DETERMINATION
OF THE FLAT-BAND VOLTAGE 41
5.2.2 HOW THE MOBILE CHARGES EFFECT CAN BE SEPARATED 42 5.2.3 THEORY 43
5.2.4 EXPERIMENTAL RESULTS AND DISCUSSION 44
5.3 TVS TECHNIQUE 45
5.3.1 THEORY 48
5.3.2 EARLIER INVESTIGATION 49
5.4 TSIC TECHNIQUE 51
5.4.1 THEORY 52
5.5 CHARGE-PUMPING ASSOCIATED WITH BTS TECHNIQUE 53
5.5.1 THEORY 53
5.5.2 SEPARATION OF THE MOBILE CHARGE EFFECT 54
5.5.3 EXPERIMENTAL RESULTS AND DISCUSSION 55
REFERENCES 57
THEORETICAL APPROACHES OF MOBILE IONS DENSITY DISTRIBUTION DETERMINATION
59
6.1 INTRODUCTION 59
6.2 PROBLEM FORMULATION 60
6.3 EARLIER ANALYTICAL APPROACHES 61
6.3.1 ANALYTICAL APPROACH OF CHOU 61
6.3.2 ANALYTICAL APPROACH OF TANGENA ET AL 63
6.3.3 ANALYTICAL APPROACH OF ROMANOV ET AL 65
6.4 EMPIRICAL MODEL 67
6.4.1 GENERAL FORMULATION 68
6.4.2 FIRST EMPIRICAL MODEL 69
6.4.3 RESULTS AND DISCUSSIONS 70
IMAGE 3
CONTENTS IX
6.4.4 SECOND EMPIRICAL MODEL 71
6.4.5 RESULTS AND DISCUSSION 74
6.5 NUMERICAL APPROACH 75
6.5.1 NUMERICAL SOLUTION 76
6.5.2 SIMULATION RESULTS AND DISCUSSION 78
6.5.3 EXPERIMENTAL AND SIMULATION RESULTS 79
6.6 CONCLUSION 80
REFERENCES 81
7 THEORETICAL MODEL OF MOBILE IONS DISTRIBUTION AND IONIC CURRENT IN THE
MOS OXIDE 83
7.1 INTRODUCTION 83
7.2 THEORETICAL MODEL OF MOBILE IONS DENSITY DISTRIBUTION 84
7.2.1 PRELIMINARY CONSIDERATIONS 84
7.2.2 ONE-DIMENSIONAL DISTRIBUTION MODEL OF MOBILE I O N S . . . 86 7.3
I-V CHARACTERISTIC DETERMINATION 92
7.4 EXPERIMENTAL RESULTS AND DISCUSSION 93
7.5 CONCLUSION 100
REFERENCES 101
INDEX 103 |
| any_adam_object | 1 |
| author | Bentarzi, Hamid |
| author_facet | Bentarzi, Hamid |
| author_role | aut |
| author_sort | Bentarzi, Hamid |
| author_variant | h b hb |
| building | Verbundindex |
| bvnumber | BV037278034 |
| classification_rvk | UP 3200 ZN 3460 |
| ctrlnum | (OCoLC)707101135 (DE-599)DNB1006507914 |
| dewey-full | 537.6226 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6226 |
| dewey-search | 537.6226 |
| dewey-sort | 3537.6226 |
| dewey-tens | 530 - Physics |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV037278034 |
| illustrated | Illustrated |
| indexdate | 2024-07-20T11:01:26Z |
| institution | BVB |
| isbn | 9783642163036 9783642163043 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-021190863 |
| oclc_num | 707101135 |
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| owner_facet | DE-11 DE-703 |
| physical | XIII, 104 S. graph. Darst. |
| publishDate | 2011 |
| publishDateSearch | 2011 |
| publishDateSort | 2011 |
| publisher | Springer |
| record_format | marc |
| series2 | Engineering materials |
| spelling | Bentarzi, Hamid Verfasser aut Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties Hamid Bentarzi Transport in metal oxide semiconductor structures Berlin [u.a.] Springer 2011 XIII, 104 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Engineering materials Literaturangaben MOS (DE-588)4130209-6 gnd rswk-swf Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf Ionenleitung (DE-588)4162322-8 gnd rswk-swf MOS (DE-588)4130209-6 s Siliciumdioxid (DE-588)4077447-8 s Ionenleitung (DE-588)4162322-8 s DE-604 Erscheint auch als Online-Ausgabe Transport in Metal-Oxide-Semiconductor Structures X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=3532033&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=021190863&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Bentarzi, Hamid Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties MOS (DE-588)4130209-6 gnd Siliciumdioxid (DE-588)4077447-8 gnd Ionenleitung (DE-588)4162322-8 gnd |
| subject_GND | (DE-588)4130209-6 (DE-588)4077447-8 (DE-588)4162322-8 |
| title | Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties |
| title_alt | Transport in metal oxide semiconductor structures |
| title_auth | Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties |
| title_exact_search | Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties |
| title_full | Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties Hamid Bentarzi |
| title_fullStr | Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties Hamid Bentarzi |
| title_full_unstemmed | Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties Hamid Bentarzi |
| title_short | Transport in metal-oxide-semiconductor structures |
| title_sort | transport in metal oxide semiconductor structures mobile ions effects on the oxide properties |
| title_sub | mobile ions effects on the oxide properties |
| topic | MOS (DE-588)4130209-6 gnd Siliciumdioxid (DE-588)4077447-8 gnd Ionenleitung (DE-588)4162322-8 gnd |
| topic_facet | MOS Siliciumdioxid Ionenleitung |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=3532033&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=021190863&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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