Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
Chemnitz
Univ.-Verl.
2010
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | 245 S. Ill., graph. Darst. 21 cm |
| ISBN: | 9783941003170 |
Staff View
MARC
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| 100 | 1 | |a Wächtler, Thomas |d 1979- |e Verfasser |0 (DE-588)141548029 |4 aut | |
| 245 | 1 | 0 | |a Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices |c Thomas Wächtler |
| 264 | 1 | |a Chemnitz |b Univ.-Verl. |c 2010 | |
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Record in the Search Index
| _version_ | 1804143774240079872 |
|---|---|
| adam_text | CONTENTS LIST OF ACRONYMS AND SYMBOLS 15 VORWORT 23 1 INTRODUCTION 25 2
ATOMIC LAYER DEPOSITION * APPLICATIONS AND BASIC PRINCIPLES 37 2.1
OVERVIEW 37 2.2 CHARACTERISTICS OF THE ALD TECHNIQUE 41 2.3 SURFACE
PHENOMENA UNDERLYING ALD 44 2.3.1 ADSORPTION PROCESSES 44 2.3.2
MECHANISMS OF CHEMISORPTION 46 2.3.3 FACTORS THAT INFLUENCE THE GROWTH
PER CYCLE 46 2.3.4 GROWTH MODES 50 2.4 ALD OF METAL FILMS 52 2.4.1 BASE
AND NOBLE METALS 52 2.4.2 COPPER 53 3 EXPERIMENTAL APPROACH FOR
DEVELOPING A COPPER OXIDE ALD PROCESS 59 3.1 PRECURSOR CONSIDERATIONS 59
3.2 ALD EQUIPMENT AND PROCESS CONDITIONS 61 3.3 MATERIAL
CHARACTERIZATION AND ANALYSIS TECHNIQUES 63 3.3.1 FILM MORPHOLOGY,
STRUCTURE, AND ADHESION 64 3.3.2 FILM THICKNESS AND OPTICAL PROPERTIES
65 3.3.3 SAMPLE COMPOSITION AND CHEMICAL STATE 66 BIBLIOGRAFISCHE
INFORMATIONEN HTTP://D-NB.INFO/1004937253 DIGITALISIERT DURCH B.2.4 THE
LENG-LORENTZ MODEL 173 CONTENTS 4 ALD PROCESSES FOR COPPER OXIDE GROWTH
69 4.1 INITIAL SCREENING EXPERIMENTS 69 4.1.1 CVD STUDIES 69 4.1.2 ALD
INVESTIGATIONS WITH DIFFERENT CO-REACTANTS 72 4.1.3 CONCLUSIONS FROM THE
SCREENING STUDIES 80 4.2 OPTIMIZATION AND CHARACTERIZATION OF THE ALD
PROCESSES ON DIFFERENT SUBSTRATES 82 4.2.1 INFLUENCE OF METALLIC
TANTALUM 82 4.2.2 COPPER OXIDE FILMS GROWN ON TAN, RU, AND SIO 2 85 4.3
DETAILS OF THE GROWTH IN THE ALD WINDOW 97 4.3.1 ALDONSIO 2 98 4.3.2 ALD
ON TAN 108 4.3.3 ALDONRU ILL 5 SEED LAYERS FOR THE ELECTROCHEMICAL
DEPOSITION OF COPPER 121 5.1 METHODS AND INVESTIGATIONS TO REDUCE COPPER
OXIDE FILMS 121 5.1.1 MOLECULAR HYDROGEN AND HYDROGEN PLASMAS 121 5.1.2
ORGANIC REDUCING AGENTS 126 5.2 ELECTROCHEMICAL COPPER DEPOSITION ON ALD
SEED LAYERS 135 5.2.1 TAN DIFFUSION BARRIERS 136 5.2.2 RU UNDERLAYERS
137 6 SUMMARY AND OUTLOOK 143 A ALD EQUIPMENT 159 A.I SYSTEM OVERVIEW
159 A.2 DELIVERY OF PRECURSORS AND CO-REACTANTS 162 B SPECTROSCOPIC
ELLIPSOMETRY 167 B.I FUNDAMENTALS OF THE METHOD 167 B.2 MODELING OPTICAL
PROPERTIES 169 B.2.1 THE CAUCHY MODEL 171 B.2.2 THE LORENTZ-DRUDE MODEL
172 B.2.3 THE TAUC-LORENTZ MODEL 172 OWN PUBLICATIONS 243 CONTENTS B.3
SUBSTRATE MODELS 174 B.3.1 SILICON 174 B.3.2 SILICON DIOXIDE 174 B.3.3
TANTALUM NITRIDE 175 B.3.4 RUTHENIUM 177 B.4 MODELS OF THE ALD FILMS 179
B.4.1 COPPER OXIDE GROWN ON 20 NM DRY THERMAL SIO 2 179 B.4.2 COPPER
OXIDE GROWN ON 300 NM WET THERMAL SIO 2 182 B.4.3 COPPER OXIDE GROWN ON
40 NM SPUTTERED TAN 185 B.4.4 COPPER OXIDE GROWN ON 100 NM EVAPORATED RU
187 C THERMODYNAMIC CONSIDERATIONS 193 C.I THEORETICAL BACKGROUND 193
C.2 PATHWAYS FOR THE REDUCTION OF COPPER OXIDE 196 C.3 PATHWAYS FOR THE
REDUCTION OF TANTALUM OXIDE 197 C.4 PATHWAYS FOR THE REDUCTION OF
RUTHENIUM OXIDE 199 C.5 MATERIAL PROPERTY DATA USED FOR THE CALCULATIONS
200 BIBLIOGRAPHY 203 LIST OF FIGURES 225 LIST OF TABLES 231 VERSICHERUNG
235 THESES 237 CURRICULUM VITAE 241
|
| any_adam_object | 1 |
| author | Wächtler, Thomas 1979- |
| author_GND | (DE-588)141548029 |
| author_facet | Wächtler, Thomas 1979- |
| author_role | aut |
| author_sort | Wächtler, Thomas 1979- |
| author_variant | t w tw |
| building | Verbundindex |
| bvnumber | BV037188639 |
| classification_rvk | UP 7550 ZN 4150 |
| ctrlnum | (OCoLC)655778340 (DE-599)DNB1004937253 |
| dewey-full | 530.4175 621.3815 |
| dewey-hundreds | 500 - Natural sciences and mathematics 600 - Technology (Applied sciences) |
| dewey-ones | 530 - Physics 621 - Applied physics |
| dewey-raw | 530.4175 621.3815 |
| dewey-search | 530.4175 621.3815 |
| dewey-sort | 3530.4175 |
| dewey-tens | 530 - Physics 620 - Engineering and allied operations |
| discipline | Maschinenbau / Maschinenwesen Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
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| isbn | 9783941003170 |
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| physical | 245 S. Ill., graph. Darst. 21 cm |
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| spelling | Wächtler, Thomas 1979- Verfasser (DE-588)141548029 aut Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices Thomas Wächtler Chemnitz Univ.-Verl. 2010 245 S. Ill., graph. Darst. 21 cm txt rdacontent n rdamedia nc rdacarrier Zugl.: Chemnitz, Techn. Univ., Diss., 2010 Kupfer (DE-588)4033734-0 gnd rswk-swf Metallisieren (DE-588)4169599-9 gnd rswk-swf Kupferoxide (DE-588)4166141-2 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Atomlagenabscheidung (DE-588)7712127-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Kupfer (DE-588)4033734-0 s Kupferoxide (DE-588)4166141-2 s Dünne Schicht (DE-588)4136925-7 s Atomlagenabscheidung (DE-588)7712127-2 s Metallisieren (DE-588)4169599-9 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=021103102&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Wächtler, Thomas 1979- Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices Kupfer (DE-588)4033734-0 gnd Metallisieren (DE-588)4169599-9 gnd Kupferoxide (DE-588)4166141-2 gnd Dünne Schicht (DE-588)4136925-7 gnd Atomlagenabscheidung (DE-588)7712127-2 gnd |
| subject_GND | (DE-588)4033734-0 (DE-588)4169599-9 (DE-588)4166141-2 (DE-588)4136925-7 (DE-588)7712127-2 (DE-588)4113937-9 |
| title | Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices |
| title_auth | Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices |
| title_exact_search | Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices |
| title_full | Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices Thomas Wächtler |
| title_fullStr | Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices Thomas Wächtler |
| title_full_unstemmed | Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices Thomas Wächtler |
| title_short | Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices |
| title_sort | thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices |
| topic | Kupfer (DE-588)4033734-0 gnd Metallisieren (DE-588)4169599-9 gnd Kupferoxide (DE-588)4166141-2 gnd Dünne Schicht (DE-588)4136925-7 gnd Atomlagenabscheidung (DE-588)7712127-2 gnd |
| topic_facet | Kupfer Metallisieren Kupferoxide Dünne Schicht Atomlagenabscheidung Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=021103102&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT wachtlerthomas thinfilmsofcopperoxideandcoppergrownbyatomiclayerdepositionforapplicationsinmetallizationsystemsofmicroelectronicdevices |