Entwicklung eines Laser-Lift-Off-Prozesses für InGaN-LEDs:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | German |
| Veröffentlicht: |
2010
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| Schlagworte: | |
| Beschreibung: | II, 103 S. Ill., graph. Darst. |
Internformat
MARC
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| 100 | 1 | |a Goßler, Christian |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Entwicklung eines Laser-Lift-Off-Prozesses für InGaN-LEDs |c von Christian Goßler |
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| 300 | |a II, 103 S. |b Ill., graph. Darst. | ||
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| 502 | |a Regensburg, Univ., Diplomarb., 2010 | ||
| 650 | 0 | 7 | |a Lumineszenzdiode |0 (DE-588)4125154-4 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Lumineszenzdiode |0 (DE-588)4125154-4 |D s |
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| 999 | |a oai:aleph.bib-bvb.de:BVB01-020766453 | ||
Datensatz im Suchindex
| _version_ | 1804143544855691264 |
|---|---|
| any_adam_object | |
| author | Goßler, Christian |
| author_facet | Goßler, Christian |
| author_role | aut |
| author_sort | Goßler, Christian |
| author_variant | c g cg |
| building | Verbundindex |
| bvnumber | BV036850475 |
| classification_rvk | UD 6100 |
| ctrlnum | (OCoLC)706029999 (DE-599)BVBBV036850475 |
| discipline | Physik |
| format | Thesis Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV036850475 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:49:21Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-020766453 |
| oclc_num | 706029999 |
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| physical | II, 103 S. Ill., graph. Darst. |
| publishDate | 2010 |
| publishDateSearch | 2010 |
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| spelling | Goßler, Christian Verfasser aut Entwicklung eines Laser-Lift-Off-Prozesses für InGaN-LEDs von Christian Goßler 2010 II, 103 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Regensburg, Univ., Diplomarb., 2010 Lumineszenzdiode (DE-588)4125154-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Lumineszenzdiode (DE-588)4125154-4 s DE-604 |
| spellingShingle | Goßler, Christian Entwicklung eines Laser-Lift-Off-Prozesses für InGaN-LEDs Lumineszenzdiode (DE-588)4125154-4 gnd |
| subject_GND | (DE-588)4125154-4 (DE-588)4113937-9 |
| title | Entwicklung eines Laser-Lift-Off-Prozesses für InGaN-LEDs |
| title_auth | Entwicklung eines Laser-Lift-Off-Prozesses für InGaN-LEDs |
| title_exact_search | Entwicklung eines Laser-Lift-Off-Prozesses für InGaN-LEDs |
| title_full | Entwicklung eines Laser-Lift-Off-Prozesses für InGaN-LEDs von Christian Goßler |
| title_fullStr | Entwicklung eines Laser-Lift-Off-Prozesses für InGaN-LEDs von Christian Goßler |
| title_full_unstemmed | Entwicklung eines Laser-Lift-Off-Prozesses für InGaN-LEDs von Christian Goßler |
| title_short | Entwicklung eines Laser-Lift-Off-Prozesses für InGaN-LEDs |
| title_sort | entwicklung eines laser lift off prozesses fur ingan leds |
| topic | Lumineszenzdiode (DE-588)4125154-4 gnd |
| topic_facet | Lumineszenzdiode Hochschulschrift |
| work_keys_str_mv | AT goßlerchristian entwicklungeineslaserliftoffprozessesfuringanleds |