Technology of gallium nitride crystal growth:
Saved in:
| Other Authors: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Berlin ; Heidelberg
Springer
2010
|
| Series: | Springer series in materials science
133 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Literaturangaben. - Zusätzliches Online-Angebot unter www.springer.com |
| Physical Description: | XXI, 326 S. Ill., graph. Darst. 24 cm |
| ISBN: | 9783642048289 |
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MARC
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| 245 | 1 | 0 | |a Technology of gallium nitride crystal growth |c Dirk Ehrentraut ... ed. |
| 264 | 1 | |a Berlin ; Heidelberg |b Springer |c 2010 | |
| 300 | |a XXI, 326 S. |b Ill., graph. Darst. |c 24 cm | ||
| 336 | |b txt |2 rdacontent | ||
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| 490 | 1 | |a Springer series in materials science |v 133 | |
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| 650 | 0 | 7 | |a Galliumnitrid |0 (DE-588)4375592-6 |2 gnd |9 rswk-swf |
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Record in the Search Index
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| adam_text | IMAGE 1
CONTENTS
PART I MARKET FOR BULK GAN CRYSTALS 1 DEVELOPMENT OF THE BULK GAN
SUBSTRATE MARKET 3
ANDREW D. HANSER AND KEITH R. EVANS 1.1 INTRODUCTION 3
1.2 III-N DEVICE MARKET DRIVERS AND FORECAST 4
1.2.1 LIGHT GENERATION AND SOLID STATE LIGHTING IN THE III-NS 4
1.2.2 ELECTRICAL SYSTEMS AND POWER ELECTRONICS IN THE III-NS 5
1.2.3 POSITIONING GAN SUBSTRATES FOR SSL AND POWER ELECTRONICS MARKETS 7
1.2.4 KEY DRIVERS FOR BULK GAN SUBSTRATE COMMERCIALIZATION SUCCESS 9
1.3 BENEFITS AND IMPORTANCE OF BULK GAN SUBSTRATES 11
1.3.1 DEVICE PERFORMANCE 12
1.3.2 THERMAL CONDUCTIVITY 16
1.3.3 THERMALLY ACTIVATED DEVICE FAILURE 17
1.3.4 DEVICE COST 18
1.4 GAN DEVICE TRENDS FOR BULK GAN SUBSTRATES 19
1.4.1 LASERS AND LEDS 19
1.4.2 POWER SWITCHES 20
1.4.3 HIGH-FREQUENCY, HIGH-POWER HEMTS 21
1.5 BULK GAN SUBSTRATE TRENDS 21
1.5.1 HYDRIDE VAPOR PHASE EPITAXY 22
1.5.2 AMMONOTHERMAL GROWTH 22
1.5.3 SOLUTION GROWTH 23
1.5.4 COMBINED GROWTH TECHNIQUES 23
1.6 SUMMARY 24
REFERENCES 25
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/997432454
DIGITALISIERT DURCH
IMAGE 2
XII CONTENTS
PART II VAPOR PHASE GROWTH TECHNOLOGY
2 HYDRIDE VAPOR PHASE EPITAXY OF GAN 31
AKINORI KOUKITU AND YOSHINAO KUMAGAI 2.1 INTRODUCTION 31
2.2 THERMODYNAMIC ANALYSIS ON HVPE GROWTH OF GAN 32 2.2.1 CALCULATION
PROCEDURE 32
2.2.2 EQUILIBRIUM PARTIAL PRESSURE AND DRIVING FORCE FOR THE GAN
DEPOSITION 34
2.3 CUBIC GAN EPITAXIAL GROWTH ON (100) GAAS SUBSTRATE 37 2.3.1
EXPERIMENTAL 38
2.3.2 CUBIC GAN GROWTH 39
2.4 COMPARISON OF GAN GROWTH ON ( 111 )A AND (111)B GAAS SUBSTRATES 42
2.4.1 EXPERIMENTAL 42
2.4.2 COMPARISON OF GAN GROWTH ON ( 111)A AND (LLL)B GAAS SURFACES 43
2.5 AB INITIO CALCULATIONS OF GAN INITIAL GROWTH PROCESSES ON (LLL)A
AND(LLL)B GAAS SURFACES 45
2.5.1 CALCULATION PROCEDURE 46
2.5.2 GAN INITIAL GROWTH PROCESSES ON (111)A AND ( 111)B GAAS SURFACES
46
2.6 THICK GAN GROWTH ON (111)A GAAS SUBSTRATE 49
2.6.1 EXPERIMENTAL 49
2.6.2 THICK GAN GROWTH ON (LLL)A GAAS SURFACE 50
2.7 PREPARATION OF FE-DOPED SEMI-INSULATING GAN SUBSTRATES 53 2.7.1
EXPERIMENTAL 55
2.7.2 FE-DOPED GAN LAYER GROWN ON SAPPHIRE AND GAAS 56 REFERENCES 59
3 GROWTH OF BULK GAN CRYSTALS BY HVPE ON SINGLE CRYSTALLINE GAN SEEDS 61
B. LUCZNIK, B. PASTUSZKA, G. KAMLER, I. GRZEGORY, AND S. POROWSKI 3.1
INTRODUCTION 61
3.2 EXPERIMENTAL 62
3.2.1 SEED CRYSTALS 62
3.2.2 HVPE REACTOR AND GROWTH CONDITIONS 63
3.2.3 CHARACTERIZATION 64
3.3 EXPERIMENTAL RESULTS 64
3.3.1 CRYSTALS GROWN ON SMALL NEAR DISLOCATION FREE GAN PLATELET-LIKE
SEEDS 64
3.3.2 CRYSTALS GROWN ON SMALL NEAR DISLOCATION FREE GAN NEEDLE-LIKE
SEEDS 69
IMAGE 3
CONTENTS XIII
3.3.3 CRYSTALS GROWN ON LARGE (0001) ORIENTED GAN SUBSTRATES 73
3.4 CONCLUSIONS 76
REFERENCES 77
4 FREESTANDING GAN WAFERS BY HYDRIDE VAPOR PHASE EPITAXY USING
VOID-ASSISTED SEPARATION TECHNOLOGY 79 Y. OSHIMA, T. YOSHIDA, T. ERI, K.
WATANABE, M. SHIBATA, AND T. MISHIMA 4.1 INTRODUCTION 79
4.2 OUTLINE OF THE HVPE-VAS TECHNOLOGY 80
4.2.1 CONCEPT OF THE HVPE-VAS TECHNOLOGY 80
4.2.2 OVERVIEW OF THE PROCESS 81
4.3 PREPARATION OF A GAN TEMPLATE WITH A POROUS TIN FILM 81 4.3.1
EXPERIMENTAL 81
4.3.2 RESULTS 81
4.3.3 MECHANISMS FOR THE FORMATION OF THE POROUS STRUCTURE .... 82 4.4
HVPE GROWTH ON GAN TEMPLATES WITH A POROUS TIN FILM 83 4.4.1 PROCESS OF
HVPE GROWTH AND SEPARATION 84
4.4.2 MECHANISMS OF GROWTH AND SEPARATION 85
4.5 PROPERTIES OF GAN WAFERS FABRICATED BY HVPE-VAS TECHNOLOGY.. 88
4.5.1 STRUCTURAL PROPERTIES 88
4.5.2 ELECTRICAL PROPERTIES 90
4.5.3 THERMAL PROPERTIES 91
4.6 SUMMARY 94
REFERENCES 95
5 NONPOLAR AND SEMIPOLAR GAN GROWTH BY HVPE 97
PAUL T. FINI AND BENJAMIN A. HASKEIL 5.1 INTRODUCTION 97
5.2 HETEROEPITAXIAL FILMS, INCLUDING SUBSTRATE SELECTION 99 5.2.1 PLANAR
A-PLANE GAN FILMS 99
5.2.2 PLANAR M-PLANE GAN FILMS 102
5.2.3 PLANAR SEMIPOLAR GAN FILMS 104
5.3 LATERAL EPITAXIAL OVERGROWTH OF NONPOLAR, SEMIPOLAR GAN 109 5.3.1
LEOOFA-PLANEGAN 109
5.3.2 LEOOFM-PLANEGAN 112
5.3.3 LEO OF SEMIPOLAR GAN 115
5.4 CONCLUSIONS AND FUTURE DEVELOPMENT 116
REFERENCES 117
IMAGE 4
XIV CONTENTS
6 HIGH GROWTH RATE MOVPE 119
K. MATSUMOTO, H. TOKUNAGA, A. UBUKATA, K. IKENAGA, Y. FUKUDA, Y. YANO,
T. TABUCHI, Y. KITAMURA, S. KOSEKI, A. YAMAGUCHI, AND K. UEMATSU 6.1
INTRODUCTION 119
6.2 GROWTH CHARACTERISTICS OF ALGAN AND GAN BY CONVENTIONAL MOVPE 120
6.3 QUANTUM CHEMICAL STUDY OF VAPOR-PHASE REACTION 123 6.4 RESULT OF
HIGH-GROWTH-RATE GAN BY USING A HIGH-FLOW-SPEED REACTOR 127
6.5 DISCUSSION AND SUMMARY 130
REFERENCES 1 32
PART NI SOLUTION GROWTH TECHNOLOGY
7 AMMONOTHERMAL GROWTH OF GAN UNDER AMMONO-BASIC CONDITIONS 1 37
R. DORADZINSKI, R. DWILINSKI, J. GARCZYRISKI, L.P. SIERZPUTOWSKI, AND Y.
KANBARA 7.1 INTRODUCTION 137
7.2 THE GROWTH METHOD 138
7.2.1 PHYSICO-CHEMICAL BASICS 139
7.2.2 SOLUBILITY MEASUREMENTS 141
7.2.3 EQUIPMENT 142
7.2.4 SEEDED RECRYSTALLIZATION 143
7.2.5 DOPING 144
7.2.6 CRYSTAL MACHINING 144
7.3 CRYSTAL CHARACTERIZATION 146
7.3.1 STRUCTURAL PROPERTIES 146
7.3.2 OPTICAL PROPERTIES 151
7.3.3 ELECTRICAL PROPERTIES 152
7.4 HOMOEPITAXY ON AMMONOTHERMAL GAN 152
7.5 CONCLUSIONS 157
REFERENCES 158
8 A PATHWAY TOWARD BULK GROWTH OF GAN BY THE AMMONOTHERMAL METHOD 161
TADAO HASHIMOTO AND SHUJI NAKAMURA 8.1 INTRODUCTION 161
8.2 IMPACT OF MINERALIZER ON AMMONOTHERMAL SYNTHESISOFGAN 162
8.3 SOLUBILITY OF GAN IN AMMONOBASIC SOLUTIONS 165
8.4 SEEDED GROWTH OF GAN WITH METALLIC GA NUTRIENT 170
8.5 SEEDED GROWTH OF GAN WITH POLYCRYSTALLINE GAN NUTRIENT 174 8.6
GROWTH OF BULK GAN CRYSTALS AND SLICED WAFERS 177
8.7 SUMMARY 180
REFERENCES 181
IMAGE 5
CONTENTS XV
9 ACIDIC AMMONOTHERMAL GROWTH TECHNOLOGY FOR GAN 183 DIRK EHRENTRAUT AND
YUJI KAGAMITANI 9.1 INTRODUCTION 183
9.2 BRIEF HISTORY OF THE AMMONOTHERMAL GROWTH TECHNIQUE OF GAN 185
9.3 GROWTH TECHNOLOGY 186
9.4 CHEMISTRY OF THE SOLUTION AND GROWTH MECHANISM 188 9.4.1 SOLUBILITY
188
9.4.2 GROWTH RATE AND CHEMISTRY OF THE SOLUTION 190
9.4.3 EFFECTOF ACIDITY ON FORMATION OF GAN 193
9.5 PROPERTIES OF AMMONOTHERMAL GAN 195
9.6 PROSPECTS AND FUTURE DEVELOPMENTS FOR AMMONOTHERMAL GAN 200
REFERENCES 202
PART IV FLUX GROWTH TECHNOLOGY
10 HIGH PRESSURE SOLUTION GROWTH OF GALLIUM NITRIDE 207
MICHAL BOCKOWSKI, PAWEL STRAJC, IZABELLA GRZEGORY, AND SYLWESTER
POROWSKI 10.1 INTRODUCTION 207
10.2 GROWTH METHOD 209
10.2.1 THERMODYNAMIC AND KINETIC ASPECTS OF HPS GROWTH 210 10.2.2
EXPERIMENTAL 211
10.3 SPONTANEOUS CRYSTALUEZATION BY HPS GROWTH METHOD 214 10.3.1 HABIT
AND MORPHOLOGYOF THE CRYSTALS 214
10.3.2 PHYSICAL PROPERTIES OF THE CRYSTALS 215
10.4 SEEDED GROWTH BY HPS METHOD 216
10.4.1 LIQUID PHASE EPITAXY IN THE C-DIRECTION ON VARIOUS SUBSTRATES 217
10.4.2 MODELING OF THE CONVECTIVE TRANSPORT IN GALLIUM FOR LPE GROWTH
(TIME INDEPENDENT SOLUTIONS) 219 10.4.3 SEEDED GROWTH WITH CONVECTIVE
FLOW OF GALLIUM UNDER CONTROL 222
10.4.4 GROWTH ON HVPE SEEDS IN THE C-DIRECTIONS 224 10.4.5 GROWTH ON
HVPE SEEDS IN NONPOLAR DIRECTIONS 227 10.4.6 MODELING OF THE CONVECTIVE
TRANSPORT IN GALLIUM (TIME DEPENDENT SOLUTIONS) 227
10.5 APPLICATIONS OF PRESSURE GROWN GAN SUBSTRATES: BLUE LASER DIODES IN
TOPGAN LTD 230
10.6 SUMMARY AND PERSPECTIVES OF HPS GROWTH METHOD 232 REFERENCES 233
IMAGE 6
XVI CONTENTS
11 A BRIEF REVIEW ON THE NA-FLUX METHOD TOWARD GROWTH OF LARGE-SIZE GAN
CRYSTAL 235
DIRK EHRENTRAUT AND ELKE MEISSNER 11.1 INTRODUCTION 235
11.2 HISTORICAL DEVELOPMENT IN BRIEF 235
11.3 EXPERIMENTAL CONDITIONS FOR THE LPE GROWTH OF GAN BY THE NA-FLUX
METHOD 238
11.4 GROWTH MECHANISM AND DISLOCATIONS 239
1 1.4.1 EFFECT OF FLUX COMPOSITION ON GROWTH STABILITY AND CRYSTAL
MORPHOLOGY 239
11.4.2 GROWTH MECHANISM AND EFFECT ON DISLOCATION POPULATION 240
11.4.3 SOLUBILITY AND GROWTH RATE 241
11.5 PROPERTIES OF GAN 242
11.6 INDUSTRIALIZATION POTENTIAL FOR THE NA-FLUX METHOD 243 REFERENCES
243
12 LOW PRESSURE SOLUTION GROWTH OF GALLIUM NITRIDE 245
E. MEISSNER, S. HUSSY, AND J. FRIEDRICH 12.1 INTRODUCTION 245
12.2 TECHNOLOGY OF SOLUTION GROWTH UNDER AMBIENT PRESSURE, THE LPSG
METHOD 247
12.2.1 THE FORMATION REACTION OF GAN UNDER AMMONIA ATMOSPHERE 248
12.2.2 SOLUBILITY OF NITROGEN IN GALLIUM-METAL SOLUTIONS 251 12.2.3
GROWTH SETUP, PROCESS, AND BASIC CHALLENGES 254 12.2.4 THE INFLUENCE OF
PROCESS PARAMETERS ON THE EPITAXIAL AND PARASITIC GROWTH OF GAN 256
12.3 EVOLUTION OF STRUCTURE AND MORPHOLOGY OF THE GAN LAYERS .261 12.3.1
IMPORTANCE OF THE INITIAL GROWTH STAGE 261
12.3.2 MACROSCOPIC DEFECTS IN LPSG GAN 263
12.4 PROPERTIES OF THE LPSG GAN MATERIAL 265
12.4.1 STRUCTURAL PROPERTIES AND DISLOCATION DENSITY IN LPSG GAN
MATERIAL 265
12.4.2 ELECTRICAL PROPERTIES 270
12.4.3 IMPURITIES 270
12.5 SUMMARY AND PROSPECT 271
REFERENCES 272
PART V CHARACTERIZATION OF GAN CRYSTALS
13 OPTICAL PROPERTIES OF GAN SUBSTRATES 277
SHIGEFUSA F. CHICHIBU 13.1 INTRODUCTION 277
IMAGE 7
CONTENTS XVII
13.2 OPTICAL PROPERTIES OF GAN SUBSTRATES GROWN BY METALORGANIC VAPOR
PHASE EPITAXY AND HALIDE VAPOR PHASE EPITAXY 279
13.2.1 PHOTOREFLECTANCE SPECTRA OF EXCITONIC POLARITONS IN MOVPE-LEO GAN
SUBSTRATE 279 13.2.2 TRPLOF MOVPE-LEO GAN SUBSTRATE 283
13.2.3 LOW TEMPERATURE PL SPECTRA OF HVPE-LEO GAN SUBSTRATE 285
13.3 EFFECTS OF GROWTH POLAR DIRECTION ON THE OPTICAL PROPERTIES OF
SEEDED GAN SUBSTRATES GROWN BY AMMONOTHERMAL METHOD 286
13.4 EFFECTS OF DISLOCATION BENDING ON THE OPTICAL PROPERTIES OF SEEDED
GAN SUBSTRATES GROWN BY AMMONOTHERMAL METHOD 288
13.5 SUMMARY 290
REFERENCES 29 1
14 POINT DEFECTS AND IMPURITIES IN BULK GAN STUDIED BY POSITRON
ANNIHILATION SPECTROSCOPY 295
FILIP TUOMISTO 14.1 INTRODUCTION 295
14.2 POSITRON ANNIHILATION SPECTROSCOPY 296
14.2.1 POSITRONS IN SOLIDS 296
14.2.2 POSITRONS AT DEFECTS 298
14.2.3 EXPERIMENTAL TECHNIQUES 301
14.3 IN-GROWN DEFECTS 304
14.3.1 DEFECT FORMATION: GROWTH METHODS AND DOPING 304 14.3.2 DEFECTS
AND GROWTH POLARITY 307
14.4 DEFECT ENGINEERING 309
14.4.1 HIGH PRESSURE THERMAL ANNEALING 310
14.4.2 ELECTRON IRRADIATION EXPERIMENTS 311
14.5 SUMMARY 314
REFERENCES 314
INDEX 317
|
| any_adam_object | 1 |
| author2 | Ehrentraut, Dirk |
| author2_role | edt |
| author2_variant | d e de |
| author_facet | Ehrentraut, Dirk |
| building | Verbundindex |
| bvnumber | BV036592511 |
| classification_rvk | UQ 2000 |
| ctrlnum | (OCoLC)649517560 (DE-599)DNB997432454 |
| dewey-full | 537.6226 621.38152 |
| dewey-hundreds | 500 - Natural sciences and mathematics 600 - Technology (Applied sciences) |
| dewey-ones | 537 - Electricity and electronics 621 - Applied physics |
| dewey-raw | 537.6226 621.38152 |
| dewey-search | 537.6226 621.38152 |
| dewey-sort | 3537.6226 |
| dewey-tens | 530 - Physics 620 - Engineering and allied operations |
| discipline | Maschinenbau / Maschinenwesen Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | DE-604.BV036592511 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:43:43Z |
| institution | BVB |
| isbn | 9783642048289 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-020513188 |
| oclc_num | 649517560 |
| open_access_boolean | |
| owner | DE-29T DE-11 |
| owner_facet | DE-29T DE-11 |
| physical | XXI, 326 S. Ill., graph. Darst. 24 cm |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in materials science |
| series2 | Springer series in materials science |
| spelling | Technology of gallium nitride crystal growth Dirk Ehrentraut ... ed. Berlin ; Heidelberg Springer 2010 XXI, 326 S. Ill., graph. Darst. 24 cm txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 133 Literaturangaben. - Zusätzliches Online-Angebot unter www.springer.com Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 s Kristallwachstum (DE-588)4123579-4 s Halbleitertechnologie (DE-588)4158814-9 s DE-604 Ehrentraut, Dirk edt Meissner, Elke Sonstige oth Erscheint auch als Online-Ausgabe 978-3-642-04830-2 Springer series in materials science 133 (DE-604)BV000683335 133 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020513188&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Technology of gallium nitride crystal growth Springer series in materials science Kristallwachstum (DE-588)4123579-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| subject_GND | (DE-588)4123579-4 (DE-588)4158814-9 (DE-588)4375592-6 |
| title | Technology of gallium nitride crystal growth |
| title_auth | Technology of gallium nitride crystal growth |
| title_exact_search | Technology of gallium nitride crystal growth |
| title_full | Technology of gallium nitride crystal growth Dirk Ehrentraut ... ed. |
| title_fullStr | Technology of gallium nitride crystal growth Dirk Ehrentraut ... ed. |
| title_full_unstemmed | Technology of gallium nitride crystal growth Dirk Ehrentraut ... ed. |
| title_short | Technology of gallium nitride crystal growth |
| title_sort | technology of gallium nitride crystal growth |
| topic | Kristallwachstum (DE-588)4123579-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| topic_facet | Kristallwachstum Halbleitertechnologie Galliumnitrid |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020513188&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000683335 |
| work_keys_str_mv | AT ehrentrautdirk technologyofgalliumnitridecrystalgrowth AT meissnerelke technologyofgalliumnitridecrystalgrowth |