SiGe and Si strained-layer epitaxy for silicon heterostructure devices:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Boca Raton, Fl. [u.a.]
CRC Press/Taylor & Francis
2008
|
| Schlagworte: | |
| Online-Zugang: | Table of contents only Publisher description |
| Beschreibung: | "The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005" |
| Beschreibung: | Getr. Zählung Ill., graph. Darst. |
| ISBN: | 9781420066852 1420066854 |
Internformat
MARC
| LEADER | 00000nam a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV036118265 | ||
| 003 | DE-604 | ||
| 005 | 20100630 | ||
| 007 | t | ||
| 008 | 100413s2008 xxuad|| |||| 00||| eng d | ||
| 010 | |a 2007030343 | ||
| 020 | |a 9781420066852 |c alk. paper |9 978-1-4200-6685-2 | ||
| 020 | |a 1420066854 |c alk. paper |9 1-4200-6685-4 | ||
| 035 | |a (OCoLC)159822251 | ||
| 035 | |a (DE-599)BVBBV036118265 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 044 | |a xxu |c US | ||
| 049 | |a DE-29T | ||
| 050 | 0 | |a TK7871.96.B55 | |
| 082 | 0 | |a 621.3815/28 | |
| 245 | 1 | 0 | |a SiGe and Si strained-layer epitaxy for silicon heterostructure devices |c ed. by John D. Cressler |
| 264 | 1 | |a Boca Raton, Fl. [u.a.] |b CRC Press/Taylor & Francis |c 2008 | |
| 300 | |a Getr. Zählung |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a "The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005" | ||
| 650 | 4 | |a Bipolar transistors |x Materials | |
| 650 | 4 | |a Heterostructures | |
| 650 | 4 | |a Silicon |x Electric properties | |
| 650 | 4 | |a EpitaxySilicium | |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterostruktur-Bauelement |0 (DE-588)4236378-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Optoelektronisches Bauelement |0 (DE-588)4043689-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Bipolartransistor |0 (DE-588)4145669-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Germanium |0 (DE-588)4135644-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 1 | |a Heterostruktur-Bauelement |0 (DE-588)4236378-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 1 | 1 | |a Germanium |0 (DE-588)4135644-5 |D s |
| 689 | 1 | 2 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Bipolartransistor |0 (DE-588)4145669-5 |D s |
| 689 | 2 | 1 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
| 689 | 2 | 2 | |a Optoelektronisches Bauelement |0 (DE-588)4043689-5 |D s |
| 689 | 2 | |5 DE-604 | |
| 700 | 1 | |a Cressler, John D. |d 1961- |e Sonstige |0 (DE-588)140008055 |4 oth | |
| 856 | 4 | |u http://www.loc.gov/catdir/toc/ecip0723/2007030343.html |3 Table of contents only | |
| 856 | 4 | |u http://www.loc.gov/catdir/enhancements/fy0811/2007030343-d.html |3 Publisher description | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-019008308 | ||
Datensatz im Suchindex
| _version_ | 1804141223005388800 |
|---|---|
| any_adam_object | |
| author_GND | (DE-588)140008055 |
| building | Verbundindex |
| bvnumber | BV036118265 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.96.B55 |
| callnumber-search | TK7871.96.B55 |
| callnumber-sort | TK 47871.96 B55 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| ctrlnum | (OCoLC)159822251 (DE-599)BVBBV036118265 |
| dewey-full | 621.3815/28 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/28 |
| dewey-search | 621.3815/28 |
| dewey-sort | 3621.3815 228 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02568nam a2200613zc 4500</leader><controlfield tag="001">BV036118265</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20100630 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">100413s2008 xxuad|| |||| 00||| eng d</controlfield><datafield tag="010" ind1=" " ind2=" "><subfield code="a">2007030343</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781420066852</subfield><subfield code="c">alk. paper</subfield><subfield code="9">978-1-4200-6685-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1420066854</subfield><subfield code="c">alk. paper</subfield><subfield code="9">1-4200-6685-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)159822251</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV036118265</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">xxu</subfield><subfield code="c">US</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.96.B55</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/28</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">SiGe and Si strained-layer epitaxy for silicon heterostructure devices</subfield><subfield code="c">ed. by John D. Cressler</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boca Raton, Fl. [u.a.]</subfield><subfield code="b">CRC Press/Taylor & Francis</subfield><subfield code="c">2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">Getr. Zählung</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">"The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bipolar transistors</subfield><subfield code="x">Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Heterostructures</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon</subfield><subfield code="x">Electric properties</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">EpitaxySilicium</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heterostruktur-Bauelement</subfield><subfield code="0">(DE-588)4236378-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Optoelektronisches Bauelement</subfield><subfield code="0">(DE-588)4043689-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Bipolartransistor</subfield><subfield code="0">(DE-588)4145669-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Germanium</subfield><subfield code="0">(DE-588)4135644-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Heterostruktur-Bauelement</subfield><subfield code="0">(DE-588)4236378-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Germanium</subfield><subfield code="0">(DE-588)4135644-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Bipolartransistor</subfield><subfield code="0">(DE-588)4145669-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="1"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="2"><subfield code="a">Optoelektronisches Bauelement</subfield><subfield code="0">(DE-588)4043689-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cressler, John D.</subfield><subfield code="d">1961-</subfield><subfield code="e">Sonstige</subfield><subfield code="0">(DE-588)140008055</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2=" "><subfield code="u">http://www.loc.gov/catdir/toc/ecip0723/2007030343.html</subfield><subfield code="3">Table of contents only</subfield></datafield><datafield tag="856" ind1="4" ind2=" "><subfield code="u">http://www.loc.gov/catdir/enhancements/fy0811/2007030343-d.html</subfield><subfield code="3">Publisher description</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-019008308</subfield></datafield></record></collection> |
| id | DE-604.BV036118265 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:12:27Z |
| institution | BVB |
| isbn | 9781420066852 1420066854 |
| language | English |
| lccn | 2007030343 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-019008308 |
| oclc_num | 159822251 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | Getr. Zählung Ill., graph. Darst. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | CRC Press/Taylor & Francis |
| record_format | marc |
| spelling | SiGe and Si strained-layer epitaxy for silicon heterostructure devices ed. by John D. Cressler Boca Raton, Fl. [u.a.] CRC Press/Taylor & Francis 2008 Getr. Zählung Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier "The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005" Bipolar transistors Materials Heterostructures Silicon Electric properties EpitaxySilicium Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Heterostruktur-Bauelement (DE-588)4236378-0 gnd rswk-swf Optoelektronisches Bauelement (DE-588)4043689-5 gnd rswk-swf Bipolartransistor (DE-588)4145669-5 gnd rswk-swf Germanium (DE-588)4135644-5 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Silicium (DE-588)4077445-4 s Heterostruktur-Bauelement (DE-588)4236378-0 s DE-604 Germanium (DE-588)4135644-5 s Halbleiterbauelement (DE-588)4113826-0 s Bipolartransistor (DE-588)4145669-5 s Feldeffekttransistor (DE-588)4131472-4 s Optoelektronisches Bauelement (DE-588)4043689-5 s Cressler, John D. 1961- Sonstige (DE-588)140008055 oth http://www.loc.gov/catdir/toc/ecip0723/2007030343.html Table of contents only http://www.loc.gov/catdir/enhancements/fy0811/2007030343-d.html Publisher description |
| spellingShingle | SiGe and Si strained-layer epitaxy for silicon heterostructure devices Bipolar transistors Materials Heterostructures Silicon Electric properties EpitaxySilicium Halbleiterbauelement (DE-588)4113826-0 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Heterostruktur-Bauelement (DE-588)4236378-0 gnd Optoelektronisches Bauelement (DE-588)4043689-5 gnd Bipolartransistor (DE-588)4145669-5 gnd Germanium (DE-588)4135644-5 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4131472-4 (DE-588)4236378-0 (DE-588)4043689-5 (DE-588)4145669-5 (DE-588)4135644-5 (DE-588)4077445-4 |
| title | SiGe and Si strained-layer epitaxy for silicon heterostructure devices |
| title_auth | SiGe and Si strained-layer epitaxy for silicon heterostructure devices |
| title_exact_search | SiGe and Si strained-layer epitaxy for silicon heterostructure devices |
| title_full | SiGe and Si strained-layer epitaxy for silicon heterostructure devices ed. by John D. Cressler |
| title_fullStr | SiGe and Si strained-layer epitaxy for silicon heterostructure devices ed. by John D. Cressler |
| title_full_unstemmed | SiGe and Si strained-layer epitaxy for silicon heterostructure devices ed. by John D. Cressler |
| title_short | SiGe and Si strained-layer epitaxy for silicon heterostructure devices |
| title_sort | sige and si strained layer epitaxy for silicon heterostructure devices |
| topic | Bipolar transistors Materials Heterostructures Silicon Electric properties EpitaxySilicium Halbleiterbauelement (DE-588)4113826-0 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Heterostruktur-Bauelement (DE-588)4236378-0 gnd Optoelektronisches Bauelement (DE-588)4043689-5 gnd Bipolartransistor (DE-588)4145669-5 gnd Germanium (DE-588)4135644-5 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Bipolar transistors Materials Heterostructures Silicon Electric properties EpitaxySilicium Halbleiterbauelement Feldeffekttransistor Heterostruktur-Bauelement Optoelektronisches Bauelement Bipolartransistor Germanium Silicium |
| url | http://www.loc.gov/catdir/toc/ecip0723/2007030343.html http://www.loc.gov/catdir/enhancements/fy0811/2007030343-d.html |
| work_keys_str_mv | AT cresslerjohnd sigeandsistrainedlayerepitaxyforsiliconheterostructuredevices |