Modeling and simulation of negative bias temperature instability: degradation of field-effect transistors
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
Saarbrücken
VDM Verlag Dr. Müller
2010
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| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Hergestellt on demand |
| Physical Description: | IX, 126 S. Ill., graph. Darst. 24 cm |
| ISBN: | 9783836459976 |
Staff View
MARC
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| 245 | 1 | 0 | |a Modeling and simulation of negative bias temperature instability |b degradation of field-effect transistors |c Robert Entner |
| 264 | 1 | |a Saarbrücken |b VDM Verlag Dr. Müller |c 2010 | |
| 300 | |a IX, 126 S. |b Ill., graph. Darst. |c 24 cm | ||
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Record in the Search Index
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| adam_text | CONTENTS ABSTRACT I KURZFASSUNG UE ACKNOWLEDGMENT III CONTENTS IV LIST OF
ABBREVIATIONS AND ACRONYMS IX 1 INTRODUCTION 1 2 SIMULATION OF
SEMICONDUCTOR DEVICES 3 2.1 CLASSICAL SEMICONDUCTOR DEVICE EQUATIONS 3
2.1.1 MAXWELL S EQUATIONS 4 2.1.2 POISSON S EQUATION 4 2.1.3 CONTINUITY
EQUATIONS 5 2.1.4 CURRENT RELATIONS 6 2.1.4.1 CARRIER DRIFT 6 2.1.4.2
CARRIER DIFFUSION 6 2.1.4.3 DRIFT-DIFFUSION CURRENT RELATIONS 7 2.1.5
THE SEMICONDUCTOR EQUATIONS 7 2.2 ANALYTIC MOSFET APPROXIMATIONS 8 2.2.1
INTERFACE AND OXIDE CHARGES 8 2.2.2 THE BASIC MODELS 8 2.2.3 NBTI
RELATED MODELS 9 2.3 CARRIER GENERATION AND RECOMBINATION 10
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/987736086 DIGITALISIERT
DURCH 4.3 CAPACITANCE-VOLTAGE CHARACTERISTICS 46 CONTENTS 2.3.1 PHOTON
TRANSITION 10 2.3.2 PHONON TRANSITION 11 2.3.2.1 DYNAMIC CASE 16 2.3.2.2
STATIONARY CASE 16 2.3.2.3 SURFACE GENERATION/RECOMBINATION 17 2.3.2.4
DISTRIBUTED TRAPS 17 2.3.3 AUGER GENERATION/RECOMBINATION 18 2.3.4
IMPACT IONIZATION 19 2.4 QUANTUM MECHANICAL EFFECTS 21 2.4.1 QUANTUM
CONFINEMENT 21 2.4.1.1 DENSITY OF STATES CORRECTION 22 2.4.1.2
CONDUCTION BAND EDGE CORRECTION 23 2.4.1.3 EVALUATION OF QUANTUM
CORRECTION MODELS 24 3 THE SILICON/SILICON-DIOXIDE INTERFACE 28 3.1
SILICON DANGLING BONDS 28 3.1.1 AMPHOTERIC NATURE OF DANGLING BONDS 29
3.1.2 CHARACTERIZATION OF TRAP CENTERS 32 3.1.3 EFFECTS OF TRAP CENTERS
34 3.2 E CENTERS 34 4 CHARACTERIZATION OF INTERFACES 36 4.1 CHARGE
PUMPING METHOD 36 4.1.1 EXPERIMENTAL SETUP 36 4.1.2 CHARGE PUMPING
CURRENT MODEL 39 4.1.3 NUMERICAL SIMULATION 40 4.1.3.1 AT VARIATION 40
4.1.3.2 CO* VARIATION 42 4.1.3.3 PULSE AMPLITUDE VARIATION 43 4.1.3.4
REVERSE BIAS 43 4.1.3.5 TEMPERATURE DEPENDENCE 44 4.2 DCIV METHOD 44
NMOSFET 73 CONTENTS 5 DIELECTRIC DEGRADATION AND FAILURE MECHANISMS 49
5.1 HOT CARRIER DEGRADATION 49 5.1.1 CHANNEL HOT-ELECTRON INJECTION 50
5.1.2 DRAIN AVALANCHE HOT-CARRIER INJECTION 50 5.1.3 SECONDARILY
GENERATED HOT-ELECTRON INJECTION 51 5.1.4 SUBSTRATE HOT-ELECTRON/HOLE
INJECTION 51 5.2 DIELECTRIC WEAROUT AND BREAKDOWN 52 5.2.1 MEASUREMENT
OF BREAKDOWN 52 5.2.2 MODELS 52 5.2.2.1 ANODE HOLE INJECTION MODEL 52
5.2.2.2 ELECTRON TRAP GENERATION MODEL 53 5.2.2.3 PERCOLATION MODEL 53
5.3 QUANTUM MECHANICAL TUNNELING 54 5.3.1 DIRECT TUNNELING 54 5.3.1.1
FOWLER-NORDHEIM TUNNELING 55 5.3.2 TRAP-ASSISTED TUNNELING 56 5.3.2.1
INELASTIC PHONON-ASSISTED TUNNELING 56 5.3.2.2 SINGLE-TRAP ASSISTED
TUNNELING 57 5.3.2.3 MULTI-TRAP ASSISTED TUNNELING 58 5.3.2.4 INFLUENCE
ON THE THRESHOLD VOLTAGE 60 5.3.3 EVALUATION OF THE NEW MODEL 61 6
NEGATIVE BIAS TEMPERATURE INSTABILITY 64 6.1 FIRST REPORT OF NBTI 65 6.2
THE NBTI TIME EXPONENT 66 6.3 PHYSICAL MECHANISMS OF NBTI 66 6.3.1 BASIC
EXPERIMENTAL SET-UP 67 6.3.2 FASTER DETERMINATION OF THE THRESHOLD
VOLTAGE 68 6.3.3 DRAIN PULSED VOLTAGE 69 6.3.4 GATE PULSED VOLTAGE 70
6.3.5 OBSERVATION OF TERMINAL CURRENTS 71 6.3.6 IMPORTANCE OF INITIAL
DEGRADATION 71 6.3.7 PMOSFET VS. VU CONTENTS 6.3.7.1 CHARGE STATES 73
6.3.7.2 AVAILABILITY OF HYDROGEN 75 6.3.7.3 WORK FUNCTION DIFFERENCE 75
6.3.8 INFLUENCE OF CHANNEL CARRIER TRANSPORT 75 6.4 REACTION-DIFFUSION
MODEL 76 6.4.1 PROPERTIES OF THE R-D MODEL 77 6.4.2 R-D MODEL VS. FAST
RECOVERY 80 6.4.3 DISPERSIVE TRANSPORT 81 6.4.4 COUPLING TO THE
SEMICONDUCTOR DEVICE EQUATIONS 83 6.5 TSETSERIS MODEL 84 6.6 THE NEW
MODEL FOR NUMERICAL SIMULATION OF NBTI 86 6.6.1 INTERFACE DEGRADATION 86
6.6.2 DRIFT-DIFFUSION 88 6.6.3 TRAPPING 88 7 CASE STUDIES 90 7.1 POWER
MOS DEVICES 90 7.1.1 LDMOSFET 91 7.1.2 PARAMETER EXTRACTION 92 7.1.3
MEASUREMENTS AND SIMULATION RESULTS 94 7.2 CMOS INVERTER 97 7.2.1
VOLTAGE TRANSFER CHARACTERISTICS 100 7.2.2 STEADY STATE DEGRADATION 101
7.2.3 TRANSIENT BEHAVIOR 101 7.3 6T SRAM CELL 104 7.3.1 STATIC NOISE
MARGIN 106 7.3.2 STEADY STATE DEGRADATION 106 7.4 RING OSCILLATOR 107
7.4.1 FREQUENCY DEGRADATION 107 7.4.2 TRANSIENT DEGRADATION 109 8
SUMMARY AND CONCLUSIONS 114 BIBLIOGRAPHY 115 CONTENTS OWN PUBLICATIONS
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| any_adam_object | 1 |
| author | Entner, Robert |
| author_GND | (DE-588)139723781 |
| author_facet | Entner, Robert |
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| author_variant | r e re |
| building | Verbundindex |
| bvnumber | BV036081401 |
| classification_tum | ELT 321f |
| ctrlnum | (OCoLC)634091725 (DE-599)DNB987736086 |
| dewey-full | 621.3815284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815284 |
| dewey-search | 621.3815284 |
| dewey-sort | 3621.3815284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Maschinenbau / Maschinenwesen Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
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| indexdate | 2024-07-09T22:11:07Z |
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| isbn | 9783836459976 |
| language | English |
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| physical | IX, 126 S. Ill., graph. Darst. 24 cm |
| publishDate | 2010 |
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| publisher | VDM Verlag Dr. Müller |
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| spelling | Entner, Robert Verfasser (DE-588)139723781 aut Modeling and simulation of negative bias temperature instability degradation of field-effect transistors Robert Entner Saarbrücken VDM Verlag Dr. Müller 2010 IX, 126 S. Ill., graph. Darst. 24 cm txt rdacontent n rdamedia nc rdacarrier Hergestellt on demand Zugl.: Wien, Techn. Univ., Diss., 2007 Simulation (DE-588)4055072-2 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Degradation Technik (DE-588)4206992-0 gnd rswk-swf Thermische Belastung (DE-588)4059816-0 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content MOS-FET (DE-588)4207266-9 s Thermische Belastung (DE-588)4059816-0 s Degradation Technik (DE-588)4206992-0 s Simulation (DE-588)4055072-2 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018972469&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Entner, Robert Modeling and simulation of negative bias temperature instability degradation of field-effect transistors Simulation (DE-588)4055072-2 gnd MOS-FET (DE-588)4207266-9 gnd Degradation Technik (DE-588)4206992-0 gnd Thermische Belastung (DE-588)4059816-0 gnd |
| subject_GND | (DE-588)4055072-2 (DE-588)4207266-9 (DE-588)4206992-0 (DE-588)4059816-0 (DE-588)4113937-9 |
| title | Modeling and simulation of negative bias temperature instability degradation of field-effect transistors |
| title_auth | Modeling and simulation of negative bias temperature instability degradation of field-effect transistors |
| title_exact_search | Modeling and simulation of negative bias temperature instability degradation of field-effect transistors |
| title_full | Modeling and simulation of negative bias temperature instability degradation of field-effect transistors Robert Entner |
| title_fullStr | Modeling and simulation of negative bias temperature instability degradation of field-effect transistors Robert Entner |
| title_full_unstemmed | Modeling and simulation of negative bias temperature instability degradation of field-effect transistors Robert Entner |
| title_short | Modeling and simulation of negative bias temperature instability |
| title_sort | modeling and simulation of negative bias temperature instability degradation of field effect transistors |
| title_sub | degradation of field-effect transistors |
| topic | Simulation (DE-588)4055072-2 gnd MOS-FET (DE-588)4207266-9 gnd Degradation Technik (DE-588)4206992-0 gnd Thermische Belastung (DE-588)4059816-0 gnd |
| topic_facet | Simulation MOS-FET Degradation Technik Thermische Belastung Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018972469&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT entnerrobert modelingandsimulationofnegativebiastemperatureinstabilitydegradationoffieldeffecttransistors |