Silicon carbide: 2 Power devices and sensors
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Viley-VCH
2010
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XX, 500 S. Ill., graph. Darst. |
| ISBN: | 9783527409976 |
Internformat
MARC
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| 245 | 1 | 0 | |a Silicon carbide |n 2 |p Power devices and sensors |c ed. by Peter Friedrichs ... |
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Datensatz im Suchindex
| _version_ | 1804140765034577920 |
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| adam_text | 32 CONTENTS PREFACE XI LIST OF CONTRIBUTORS XV VOLUME 2 SILICON CARBIDE:
POWER DEVICES AND SENSORS PART A VIEW FROM INDUSTRY 1 PRESENT STATUS AND
FUTURE PROSPECTS FOR ELECTRONICS IN ELECTRIC VEHICLES/HYBRID ELECTRIC
VEHICLES AND EXPECTATIONS FOR WIDE-BANDGAP SEMICONDUCTOR DEVICES /
KIMIMORI HAMADA 1.1 ISSUES SURROUNDING AUTOMOBILES 1 1.2 PAST, PRESENT,
AND FUTURE OF TOYOTA HYBRID VEHICLES 4 1.3 NEWEST HYBRID VEHICLE 10 1.4
EXPECTATIONS FOR WIDE-BANDGAP SEMICONDUCTORS IN HV INVERTER APPLICATIONS
12 1.5 TOYOTA GROUP RESEARCH AND DEVELOPMENT ON WIDE-BANDGAP
SEMICONDUCTOR DEVICES 14 1.6 CONCLUSIONS 18 REFERENCES 19 2 SILICON
CARBIDE POWER-DEVICE PRODUCTS - STATUS AND UPCOMING CHALLENGES WITH A
SPECIAL ATTENTION TO TRADITIONAL, NONMILITARY INDUSTRIAL APPLICATIONS 21
PETER FRIEDRICHS 2.1 INTRODUCTION 21 2.2 SIC IN POWER ELECTRONICS 22 2.3
SUMMARY 31 REFERENCES BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/996245006 DIGITALISIERT DURCH VI CONTENTS PART BI
UNIPOLAR DEVICES SCHOTTKY DIODES 3 EFFECT OF AN INTERMEDIATE GRAPHITE
LAYER ON THE ELECTRONIC PROPERTIES OF METAL/SIC CONTACTS 35 SERGEY A.
RESHANOV, KONSTANTIN V. E MTS EV, FLORIAN SPECK, KUN-YUAN GAO, THOMAS K.
SEYLLER, GERHARD PENSI, AND LOTHAR LEY 3.1 3.2 3.3 3.4 3.5 INTRODUCTION
EXPERIMENTAL RESULTS 40 DISCUSSION CONCLUSIONS REFERENCES 35 36 46 48 49
RELIABILITY ASPECTS OF SIC SCHOTTKY DIODES 51 MATTHIAS HOLZ, JOCHEN
HILSENBECK, AND ROLAND RUPP 4.1 4.2 4.3 4.4 4.5 4.6 PART B II
INTRODUCTION 51 MICROPIPES 52 AVALANCHE RUGGEDNESS BY DESIGN IMPROVEMENT
57 PRODUCT IMPROVEMENT BY HIGH PERFORMANCE DIE ATTACH 63 RELIABILITY
TEST RESULTS 67 SUMMARY 74 REFERENCES 74 JFET 5 DESIGN, PROCESS, AND
PERFORMANCE OF ALL-EPITAXIAL NORMALLY-OFFSIC JFETS 77 RAJESH CONTENTS
VII 6 EXTREME TEMPERATURE 6H-SIC JFET INTEGRATED CIRCUIT TECHNOLOGY 121
PHILIP G. NEUDECK, STEVEN L. G ARVER ICK, DAVID J. SPRY, LIANG-YU CHEN,
GLENN M. BEHEIM, MICHAEL J. KRASOWSKI, AND MEHRAN MEHREGANY 6.1
INTRODUCTION 121 6.2 TRANSISTORS 124 6.3 CIRCUITS 134 6.4 SUMMARY &
FUTURE WORK 149 REFERENCES 152 7 1200 V SIC VERTICAL-CHANNEL-JFETS AND
CASCODE SWITCHES 157 VICTOR VELIADIS 7.1 INTRODUCTION 157 7.2 LARGE-AREA
1200 V 4H-SIC VERTICAL JFET STRUCTURES 755 7.3 INVESTIGATION OF THE
SUITABILITY OF 1200 V NORMALLY-OFF VERTICAL-CHANNEL SIC JFETS FOR POWER
SWITCHING APPLICATIONS 160 1A 1200 V NORMALLY-OFF ALL-SICVJFET BASED
CASCODE SWITCH 169 7.5 RELIABILITY OF THE 1200 V NORMALLY-OFF ALL-SIC
VJFET CASCODE SWITCH 172 7.6 THERMAL PROPERTIES OF VJFET/CASCODE 174 7.7
0.143 CNR 2 ACTIVE-AREA 1200 V CLASS VERTICAL-CHANNEL JFETS 181 7.8 EDGE
TERMINATION OF LARGE-AREA VERTICAL-CHANNEL JFETS 184 7. VIII I CONTENTS
9 HIGH ELECTRON MOBILITY ACHIEVED IN N-CHANNEL 4H-SIC MOSFETS OXIDIZED
IN THE PRESENCE OF NITROGEN 215 B. ZIPPELIUS, S. BELJAKOWA, M. KRIEGER,
G. PENSI, S. A. RESHANOV, M. NOBORIO, T. KIMOTO, AND V. V. AFANAS EV
9.1 INTRODUCTION 215 9.2 EXPERIMENTAL 276 9.3 RESULTS 277 9.4 DISCUSSION
229 9.5 SUMMARY 2J7 REFERENCES 232 10 4H-SIC MISFETS WITH
NITROGEN-CONTAINING INSULATORS 235 MASATO NOBORIO, JUN SUDA, SVETLANA
BELJAKOWA, MICHAEL KRIEGER, AND TSUNENOBU KIMOTO 10.1 INTRODUCTION 235
10.2 SURVEY OF NITRIDATION 237 10.3 DEVICE FABRICATION 238 10.4
CHARACTERISTICS OF MIS CAPACITORS AND FETS ON 4H-SIC(0001 ) 240 10.5
CHARACTERISTICS OF MIS CAPACITORS AND FETS ON 4H-SI (0001) 250 10.6
INFLUENCE OF EFFECTIVE FIXED CHARGE DENSITY ON CHANNEL MOBILITY 253 10.7
APPLICATION OF N-CONTAINING INSULATORS TO P-CHANNEL MIS CAPACITORS AND
FETS 256 10.8 SUMMARY OF EFFECTS OF N-CONTAINING INSULATORS ON N-AND
P-TYPE SIC MIS CAPACITORS AND FETS 260 10. CONTENTS IIX PART C MOSFET
AND JFET POWER DEVICES 12 DEVELOPMENT OF SIC DIODES, POWER MOSFETS AND
INTELLIGENT POWER MODULES 297 TAKASHI NAKAMURA, MINEO MIURA, NORIAKI
KAWAMOTO, YUKI NAKANO, TAKUKAZU OTSUKA, KEIJI OKUMURA, AND AKIRA
KAMISAWA 12.1 12.2 12.3 12.4 12.5 12.6 INTRODUCTION 297 SIC DIODES 294
SIC MOSFETS 298 SIC TRENCH MOSFETS 304 SICIPMS 310 SUMMARY 376
REFERENCES 577 13 RELIABILITY ISSUES OF SIC POWER MOSFETS TOWARD HIGH
JUNCTION TEMPERATURE OPERATION 327 SATOSHI TANIMOTO AND HIROMICHI OHASHI
13.1 INTRODUCTION 327 13.2 ISSUES AND MEASURES FOR HIGH 7J OPERATION 323
13.3 DEVICE STRUCTURE AND PROCESS INTEGRATION 340 13.4 DISCUSSION 343
13.5 CONCLUSION 345 REFERENCES 345 14 APPLICATION OF SILICON CARBIDE
TRANSISTORS IN PHOTOVOLTAIC * INVERTERS 347 DIRK KRANZER AND BRUNO
BURGER 14.1 INTRODUCTION 347 14.2 PHOTOVOLTAIC TREND 348 XI CONTENTS
PART D BIPOLAR DEVICES 15 DESIGN AND TECHNOLOGY CONSIDERATIONS FOR SIC
BIPOLAR DEVICES: BJTS, IGBTS, AND GTOS 389 QINGCHUN (JON) ZHANG AND
ANANT K. AGARWAL 15.1 SIC BIPOLAR JUNCTION TRANSISTORS 389 15.2 SIC
INSULATED GATE BIPOLAR TRANSISTORS 412 15.3 SIC GATE TURN-OFF THYRISTORS
428 15.4 TECHNICAL CHALLENGES IN SIC BIPOLAR DEVICES 440 15.5 SUMMARY
441 REFERENCES 441 16 SUPPRESSED SURFACE-RECOMBINATION STRUCTURE AND
SURFACE PASSIVATION FOR IMPROVING CURRENT GAIN OF 4H-SIC BJTS 445
KENICHI NONAKA, AKIHIKO HORIUCHI, YUKI NEGORO, KENSUKE IWANAGA, SEIICHI
YOKOYAMA, HIDEKI HASHIMOTO, MASASHI SATO, YUSUKE MAEYAMA, MASAAKI
SHIMIZU, AND HIROAKI IWAKURO 16.1 INTRODUCTION 445 16.2 SURVEY OF THE
CONVENTIONAL BJTS WITH HIGH COMMON EMITTER CURRENT GAIN 447 16.3 BASIC
STRUCTURE AND OPERATING PRINCIPLE OF THE PROPOSED BJTS 448 16.4
EVALUATION OF SURFACE PASSIVATION FOR IMPROVING CURRENT GAIN 450 16.5
DESIGN AND FABRICATION OF THE SSR-BJTS 454 16.6 CHARACTERISTICS OF THE
SSR-BJTS 456
|
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| isbn | 9783527409976 |
| language | English |
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| spelling | Friedrichs, Peter Verfasser aut Silicon carbide 2 Power devices and sensors ed. by Peter Friedrichs ... Weinheim Viley-VCH 2010 XX, 500 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Semiconductors Silicon carbide (DE-604)BV035812734 2 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018671643&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Friedrichs, Peter Silicon carbide Semiconductors Silicon carbide |
| title | Silicon carbide |
| title_auth | Silicon carbide |
| title_exact_search | Silicon carbide |
| title_full | Silicon carbide 2 Power devices and sensors ed. by Peter Friedrichs ... |
| title_fullStr | Silicon carbide 2 Power devices and sensors ed. by Peter Friedrichs ... |
| title_full_unstemmed | Silicon carbide 2 Power devices and sensors ed. by Peter Friedrichs ... |
| title_short | Silicon carbide |
| title_sort | silicon carbide power devices and sensors |
| topic | Semiconductors Silicon carbide |
| topic_facet | Semiconductors Silicon carbide |
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