Silicon carbide: 1 Growth, defects, and novel applications
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Viley-VCH
2010
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXII, 506 S. Ill., graph. Darst. |
| ISBN: | 9783527409532 |
Internformat
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Datensatz im Suchindex
| _version_ | 1804140765016752128 |
|---|---|
| adam_text | Titel: Bd. 1. Silicon carbide. Growth, defects, and novel applications
Autor: Friedrichs, Peter
Jahr: 2010
Contents
Preface XI
List of Contributors XV
Volume 1 Silicon Carbide: Growth, Defects, and Novel Applications
PartA Growth of SiC
1 Bulk growth of SiC - review on advances of SiC vapor growth
for improved doping and systematic study on dislocation
evolution 7
Sakwe Aloysius Sakwe, Mathias Stockmeier, Philip Hens,
Ralf Müller, Desiree Queren, Ulrike Kunecke, Katja Konias,
Rainer Hock, Andreas Magerl, Michel Pons, Albrecht Winnacker,
and Peter Wellmann
1.1 Introduction 7
1.2 Experiments 2
1.3 Results and discussions 7
1.4 Spatial distributionof dislocations in SiC 26
1.5 Conclusions 28
References 29
2 Bulk and epitaxial growth of micropipe-free Silicon carbide
on basal and rhombohedral plane seeds 33
Boris. M. Epelbaum, Octavian Filip, and Albrecht Winnacker
2.1 Introduction 33
2.2 Search for stable rhombohedral facets in 6H- and 4H-SiC 35
2.3 PVT growth of bulk 6H- and 4H-SiC on rhombohedral (Oll«)
facets 36
2.4 Homoepitaxial Liquid Phase Epitaxy growth on basal and
rhombohedral plane seeds 43
2.5 Conclusions 59
References 60
Silicon Carbide, Vol. I: Growth, Defects, and Novel Applications
Edited by Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, and Gerhard Pensl
Copyright € 2010 WILEY-VCH Verlag GmbH Co. KGaA, Weinheim
ISBN: 978-3-527-40953-2
VI Contents
3 Formation of extended defects in 4H-SiC epitaxial growth
and development of a fast growth technique 63
Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata,
and Masahiro Nagano
3.1 Introduction 63
3.2 Experimental 64
3.3 Formation of extended defects in 4H-SiC epitaxial growth 65
3.4 Fast epitaxial growth of 4H-SiC 88
3.5 Conclusions 92
References 93
4 Fabrication of high Performance 3C-SiC vertical MOSFETs
by reducing planar defects 95
Hiroyuki Nagasawa, Masayuki Abe, Kuniaki Yagi,
Takamitsu Kawahara, and Naoki Hatta
4.1 Introduction 95
4.2 Reduction of planar defects in 3C-SiC 96
4.3 Performance of vertical MOSFETs 706
4.4 Conclusions 777
References 772
Part B Characterization of Defects and Material Properties
5 Identification of intrinsic defects in SiC:
Towards an understanding of defect aggregates
by combining theoretical and experimental approaches 775
Michel Bockstedte, Adam Galt, Alexander Mattausch,
Oleg Pankratov, and John W. Steeds
5.1 Introduction 775
5.2 Assessing the identity of defects in SiC 116
5.3 Vacancy-related defects 119
5.4 Vacancy aggregation and its consequences 737
5.5 Carbon interstitial-related defects and high-frequency
vibrations 133
5.6 The carbon aggregation and its implications 140
5.7 Summary and outlook 142
References 143
Contents VII
6 EPR identification of intrinsic defects in SiC 147
J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen,
and T. Ohshima
6.1 Introduction 147
6.2 Isolated vacancy 152
6.3 Pulsed ELDOR of TV2a: Observation of missing central line 162
6.4 Divacancy 168
6.5 Antisites and antisite-vacancy pairs 172
6.6 Conclusion 176
References 777
7 Electrical and topographical characterization
of aluminum implanted layers in 4H Silicon carbide 181
Martin Rambach, Anton J. Bauer, and Heiner Ryssel
7.1 Introduction 181
7.2 Experimental 182
7.3 Electrical characterization 183
7.4 Topographical characterization 193
7.5 Summary 201
References 202
8 Optical properties of as-grown and process-induced stacking
faults in 4H-SiC 205
Jean Camassel and Sandrine Juillaguet
8.1 Introduction 205
8.2 Structural aspects 206
8.3 Imaging techniques 270
8.4 Optical SFs signature 216
8.5 More realistic type-II QW model 224
8.6 Transfer matrix method 232
8.7 Focussing on a single QW 237
8.8 Conclusions 239
References 240
9 Characterization of defects in Silicon carbide
by Raman spectroscopy 243
Martin Hundhausen, Roland Püsche, Jonas Röhrl, and Lothar Ley
9.1 Introduction 243
9.2 Experimental setup 243
9.3 Polytype conversion in 3C-SiC grown by chemical vapor
deposition 244
VIII Contents
9.4 Electronic Raman studies of shallow donors in Silicon
carbide 253
9.5 Graphene layers on SiC-surfaces 259
9.6 Summary 264
References 265
10 Lifetime-killing defects in 4H-SiC epilayers and lifetime
control by low-energy electron irradiation 267
Tsunenobu Kimoto, Katsunori Danno, and Jun Suda
10.1 Introduction 267
10.2 Experimental 268
10.3 Results and discussion 269
10.4 Conclusion 284
References 285
11 Identification and carrier dynamics of the dominant lifetime
limiting defect in n 4H-SiC epitaxial layers 287
Paul B. Klein
11.1 Introduction 287
11.2 Defects in 4H-SiC epilayers 290
11.3 Identification of the lifetime killer 297
11.4 Carrier dynamics at the Z1/2 defect 302
11.5 Summary 314
References 315
12 Optical beam induced current measurements:
principles and applications to SiC device characterization 319
Christophe Raynaud, Duy-Minh Nguyen, Nicolas Dheilly,
Dominique Tournier, Pierre Brosselard, Mihai Lazar,
and Dominique Planson
12.1 Introduction 319
12.2 Theory and principle of OBIC: calculation of the current 320
12.3 Description of the experimental set-up 328
12.4 Study of device termination technique 329
12.5 Determination of carrier lifetime 333
12.6 Determination of ionization coefficients 336
12.7 Conclusion 340
References 340
Contents IIX
13 Measurements of impact ionization coefficients of electrons
and holes in 4H-SiC and their application to device
Simulation 341
Tetsuo Hatakeyama
13.1 Introduction 341
13.2 Experiments 343
13.3 Modelingof anisotropic impact ionization coefficients 348
13.4 Application to device Simulation of power devices 352
13.5 Summary and conclusions 356
Appendix A: Interpolation formula for anisotropic impact
ionization coefficients 357
Appendix B: Scaling properties in the design of power
devices 359
References 360
14 Analysis of interface trap parameters from double-peak
conductance spectra taken on N-implanted 3C-SiC MOS
capacitors 363
Michael Krieger, Svetlana Beljakowa, Lia Trapaidze,
Thomas Frank, Heiko B. Weber, Gerhard Pensl, Naoki Hatta,
Masayuki Abe, Hiroyuki Nagasawa, and Adolf Schöner
14.1 Introduction 363
14.2 Experimental 363
14.3 Experimental results 365
14.4 Model 367
14.5 Discussion 370
14.6 Summary 373
References 374
15 Non-basal plane SiC surfaces: Anisotropic structures
and low-dimensional electron Systems 375
Ulrich Starke
15.1 Introduction 375
15.2 Crystal structure and bulk truncated surface termination 376
15.3 Experimental procedures 379
15.4 Hydrogen etching 379
15.5 a-plane and m-plane surfaces 381
15.6 Surface phases on SiC (1102) 383
15.7 The SiC( 1102) surface 391
15.8 Summary 391
References 392
X | Contents
Part C Novel Applications
16 Comparative columnar porous etching studies
on n-type 6H SiC crystalline faces 395
Yue Ke, Robert P. Devaty, and Wolfgang J. Choyke
16.1 Introduction 395
16.2 Experimental 395
16.3 Results and discussion 397
16.4 Summary 407
References 408
17 Micro- and nanomechanical structures for Silicon carbide
MEMS and NEMS 411
Christian A. Zorman andRocco J. Parro
17.1 Introduction 411
17.2 Single crystalline SiC 412
17.3 Polycrystalline SiC 427
17.4 Amorphous SiC 436
17.5 Conclusions 444
References 445
18 Epitaxial graphene: a new material 453
Th. Seyller, A. Bostwick, K. V. Emtsev, K. Hörn, L. Ley,
J. L. McChesney, T. Ohta, J. D. Riley, E. Rotenberg, and F. Speck
18.1 Introduction 453
18.2 Experimental aspects 455
18.3 Comparison of graphene and FLG on SiC(OOOl) and
SiC (0001) 457
18.4 Band structure of FLG nearthe K-point 462
18.5 Summary and outlook 468
References 468
19 Density functional study of graphene overlayers on SiC 473
Oleg Pankratov and Alexander Maltausch
19.1 Introduction 473
19.2 Method 478
19.3 Structural properties 479
19.4 Electronic structure 482
19.5 Conclusions 489
References 490
Index 493
|
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| title_fullStr | Silicon carbide 1 Growth, defects, and novel applications ed. by Peter Friedrichs ... |
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| title_short | Silicon carbide |
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