Analysis of electrically active defects in silicon for solar cells:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
München
Dr. Hut
2009
|
| Edition: | 1. Aufl. |
| Series: | Physik
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | IV, 188 S. 210 mm x 148 mm, 300 gr. |
| ISBN: | 9783868530360 |
Staff View
MARC
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| 100 | 1 | |a Roth, Thomas |d 1967- |e Verfasser |0 (DE-588)120544350 |4 aut | |
| 245 | 1 | 0 | |a Analysis of electrically active defects in silicon for solar cells |c Thomas Roth |
| 250 | |a 1. Aufl. | ||
| 264 | 1 | |a München |b Dr. Hut |c 2009 | |
| 300 | |a IV, 188 S. |c 210 mm x 148 mm, 300 gr. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Physik | |
| 502 | |a Zugl.: Konstanz, Univ., Diss., 2008 | ||
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
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Record in the Search Index
| _version_ | 1804139093421981696 |
|---|---|
| adam_text | TABLE OF CONTENTS TABLE OF CONTENTS I 1 INTRODUCTION 1 1.1 MOTIVATION 1
1.2 THESIS OUTLINE 4 2 CARRIER LIFETIME IN CRYSTALLINE SILICON 7 2.1
CARRIER DENSITIES IN SILICON 7 2.2 GENERATION AND RECOMBINATION OF
EXCESS CARRIERS 16 2.3 RECOMBINATION MECHANISMS 17 2.3.1 INTRINSIC
RECOMBINATION 17 2.3.2 RECOMBINATION THROUGH BULK DEFECTS
(SHOCKLEY-READ- HALL) 20 2.3.3 SURFACE RECOMBINATION 24 2.4 EFFECTIVE
LIFETIME 25 3 LIFETIME SPECTROSCOPY 27 3.1 INJECTION-DEPENDENT LIFETIME
SPECTROSCOPY 27 3.2 TEMPERATURE-DEPENDENT LIFETIME SPECTROSCOPY 28 3.3
DEFECT PARAMETER SOLUTION SURFACE 30 4 LIFETIME MEASUREMENT TECHNIQUES
31 4.1 MICROWAVE-DETECTED PHOTOCONDUCTANCE DECAY 31 4.1.1 MEASUREMENT
PRINCIPLE 31 4.1.2 MEASUREMENT SETUP 34 4.2 QUASI-STEADY-STATE
PHOTOCONDUCTANCE 36 4.2.1 MEASUREMENT PRINCIPLE 36 4.2.2 MEASUREMENT
SETUP 38 4.3 TRANSIENT PHOTOCONDUCTANCE 40 4.3.1 MEASUREMENT PRINCIPLE
40 4.3.2 MEASUREMENT SETUP 40 BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/993731333 DIGITALISIERT DURCH 7.2 SAMPLE PREPARATION 93
0 TABLE OF CONTENTS 4.4 QUASI-STEADY-STATE PHOTOLUMINESCENCE 41 4.4.1
MEASUREMENT PRINCIPLE 41 4.4.2 CALIBRATION OF THE MEASUREMENT SIGNALS 42
4.4.3 MEASUREMENT SETUP 44 4.5 COMPARISON OF MEASUREMENT ARTIFACTS IN
PHOTOCONDUCTANCE- AND PHOTOLUMINESCENCE-BASED MEASUREMENTS 46 4.5.1
MINORITY CARRIER TRAPPING 47 4.5.2 DEPLETION REGION MODULATION 50 4.6
COMPARISON OF THE INTRODUCED LIFETIME MEASUREMENT TECHNIQUES 52
DEEP-LEVEL TRANSIENT SPECTROSCOPY 53 5.1 BASIC PRINCIPLE 53 5.2
PRACTICAL ISSUES 62 5.3 MEASUREMENT SETUP 64 PHOTOLUMINESCENCE LIFETIME
SPECTROSCOPY 67 6.1 ENHANCEMENT OF PHOTOLUMINESCENCE MEASUREMENT SETUP
67 6.2 TEMPERATURE-DEPENDENT REFLECTIONS 69 6.3 TEMPERATURE-DEPENDENT
PHOTON REABSORPTION 70 6.3.1 GENERALIZED PLANCK RADIATION LAW 71 6.3.2
EMITTED PHOTON FLUX 73 6.3.3 ABSORPTION COEFFICIENT 75 6.3.4 EMITTED
PHOTOLUMINESCENCE SPECTRUM 79 6.3.5 CORRECTION METHOD FOR THE
PHOTOLUMINESCENCE CALIBRATION 83 6.4 COEFFICIENT OF RADIATIVE
RECOMBINATION 85 6.4.1 TEMPERATURE-DEPENDENCE 85 6.4.2
INJECTION-DEPENDENCE 87 6.4.3 DETERMINATION USING TEMPERATURE-DEPENDENT
PHOTOLUMINESCENCE 88 MANGANESE IN/7-TYPE SILICON 91 7.1 ELECTRICAL
PROPERTIES OF MANGANESE IN SILICON 91 10.3.1 DEEP-LEVEL TRANSIENT
SPECTROSCOPY (DLTS) 134 0 TABLE OF CONTENTS III 7.3 EXPERIMENTAL RESULTS
94 7.3.1 INITIAL QUASI-STEADY-STATE PHOTOCONDUCTANCE (QSS-PC)
MEASUREMENTS 94 7.3.2 DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS) 95 7.3.3
INJECTION-DEPENDENT LIFETIME SPECTROSCOPY (IDLS) 98 7.3.4
TEMPERATURE-DEPENDENT LIFETIME SPECTROSCOPY (TDLS) 100 7.4 ASSOCIATION
TIME CONSTANT MEASUREMENT 103 7.5 CONCLUSION 107 8 TITANIUM INP-TYPE
SILICON 109 8.1 ELECTRICAL PROPERTIES OF TITANIUM IN SILICON 109 8.2
SAMPLE PREPARATION 110 8.3 EXPERIMENTAL RESULTS 110 8.3.1 EFFECT OF
PHOTON REABSORPTION ILL 8.3.2 TEMPERATURE-DEPENDENT LIFETIME
SPECTROSCOPY (TDLS) 112 8.3.3 INJECTION-DEPENDENT LIFETIME SPECTROSCOPY
(IDLS) 115 8.3.4 IN-DEPTH ANALYSIS 116 8.4 CONCLUSION 123 9 ALUMINUM
IN/VTYPE SILICON 125 9.1 ELECTRIC PROPERTIES OF ALUMINUM IN SILICON 125
9.2 SAMPLE PREPARATION 125 9.3 EXPERIMENTAL RESULTS 126 9.3.1 DEEP-LEVEL
TRANSIENT SPECTROSCOPY (DLTS) 126 9.3.2 INJECTION-DEPENDENT LIFETIME
SPECTROSCOPY (IDLS) 129 9.4 CONCLUSION 130 10 TUNGSTEN INP-TYPE SILICON
133 10.1 ELECTRICAL PROPERTIES OF TUNGSTEN IN SILICON 133 10.2 SAMPLE
PREPARATION 133 10.3 EXPERIMENTAL RESULTS 134 17 DANKSAGUNG 187 IV 0
TABLE OF CONTENTS 10.3.2 TEMPERATURE- AND INJECTION-DEPENDENT LIFETIME
SPECTROSCOPY (R-IDLS) 136 10.4 CONCLUSION 137 11 IN-DEPTH COMPARISON 139
11.1 PHOTOCONDUCTANCE VS. PHOTOLUMINESCENCE 139 11.1.1 COMPARISON ON
HIGH EXCESS CARRIER LIFETIME SAMPLES 139 11.1.2 COMPARISON ON LOW EXCESS
CARRIER LIFETIME SAMPLES 141 11.1.3 CONCLUSION 144 11.1.4 BEST PRACTICE
145 11.2 LIFETIME SPECTROSCOPY VS. DEEP-LEVEL TRANSIENT SPECTROSCOPY 147
11.2.1 PHYSICAL PROPERTIES OF DEFECT PARAMETERS 147 11.2.2 THEORETICAL
COMPARISON OF LIFETIME SPECTROSCOPY AND DEEP- LEVEL TRANSIENT
SPECTROSCOPY 150 11.3 SUMMARY AND COMPARISON OF EXPERIMENTAL RESULTS 153
12 CONCLUSIONS 157 13 BIBLIOGRAPHY 161 14 APPENDIX 171 14.1
ABBREVIATIONS 171 14.2 GLOSSARY 173 14.3 PHYSICAL CONSTANTS 176 15 LIST
OF PUBLICATIONS 177 15.1 REFEREED JOURNAL PAPERS 177 15.2 REFEREED
PAPERS PRESENTED AT INTERNATIONAL CONFERENCES 178 15.3 DIPLOMA THESIS
180 15.4 ORAL PRESENTATIONS 180 15.5 PATENT APPLICATIONS 181 16 DEUTSCHE
ZUSAMMENFASSUNG 183
|
| any_adam_object | 1 |
| author | Roth, Thomas 1967- |
| author_GND | (DE-588)120544350 |
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| building | Verbundindex |
| bvnumber | BV035482317 |
| ctrlnum | (OCoLC)644610726 (DE-599)DNB993731333 |
| dewey-full | 537.6221 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6221 |
| dewey-search | 537.6221 |
| dewey-sort | 3537.6221 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| edition | 1. Aufl. |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV035482317 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T21:38:36Z |
| institution | BVB |
| isbn | 9783868530360 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017538840 |
| oclc_num | 644610726 |
| open_access_boolean | |
| owner | DE-12 DE-91 DE-BY-TUM |
| owner_facet | DE-12 DE-91 DE-BY-TUM |
| physical | IV, 188 S. 210 mm x 148 mm, 300 gr. |
| publishDate | 2009 |
| publishDateSearch | 2009 |
| publishDateSort | 2009 |
| publisher | Dr. Hut |
| record_format | marc |
| series2 | Physik |
| spelling | Roth, Thomas 1967- Verfasser (DE-588)120544350 aut Analysis of electrically active defects in silicon for solar cells Thomas Roth 1. Aufl. München Dr. Hut 2009 IV, 188 S. 210 mm x 148 mm, 300 gr. txt rdacontent n rdamedia nc rdacarrier Physik Zugl.: Konstanz, Univ., Diss., 2008 Silicium (DE-588)4077445-4 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Gitterbaufehler (DE-588)4125030-8 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017538840&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Roth, Thomas 1967- Analysis of electrically active defects in silicon for solar cells Silicium (DE-588)4077445-4 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4125030-8 (DE-588)4113937-9 |
| title | Analysis of electrically active defects in silicon for solar cells |
| title_auth | Analysis of electrically active defects in silicon for solar cells |
| title_exact_search | Analysis of electrically active defects in silicon for solar cells |
| title_full | Analysis of electrically active defects in silicon for solar cells Thomas Roth |
| title_fullStr | Analysis of electrically active defects in silicon for solar cells Thomas Roth |
| title_full_unstemmed | Analysis of electrically active defects in silicon for solar cells Thomas Roth |
| title_short | Analysis of electrically active defects in silicon for solar cells |
| title_sort | analysis of electrically active defects in silicon for solar cells |
| topic | Silicium (DE-588)4077445-4 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| topic_facet | Silicium Gitterbaufehler Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017538840&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT roththomas analysisofelectricallyactivedefectsinsiliconforsolarcells |