Introduction to surface and thin film processes:
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| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Cambridge [u.a.]
Cambridge Univ. Press
2006
|
| Edition: | Reprint., transferred to digital print. |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Hier auch später erschienene, unveränderte Nachdrucke |
| Physical Description: | XVI, 372 S. Ill., graph. Darst. |
| ISBN: | 9780521624602 0521624606 9780521785006 0521785006 |
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| 245 | 1 | 0 | |a Introduction to surface and thin film processes |c John A. Venables |
| 250 | |a Reprint., transferred to digital print. | ||
| 264 | 1 | |a Cambridge [u.a.] |b Cambridge Univ. Press |c 2006 | |
| 300 | |a XVI, 372 S. |b Ill., graph. Darst. | ||
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Record in the Search Index
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|---|---|
| adam_text | Contents
Preface
page
xi
Chapter
1
Introduction to surface processes
1
1.1
Elementary thermodynamic ideas of surfaces
1
1.1.1
Thermodynamic potentials and the dividing surface
1
/. 1.2
Surface tension and surface energy
3
1.1.3
Surface energy and surface stress
4
1.2
Surface energies and the
Wulff
theorem
4
1.2.1
General considerations
5
1.2.2
The terrace-ledge-kink model
5
1.2.3 Wulff
construction and the forms of small crystals
7
1.3
Thermodynamics versus kinetics
9
1.3.1
Thermodynamics of the vapor pressure
11
1.3.2
The kinetics of crystal growth
15
1.4
Introduction to surface and
adsórbate
reconstructions
19
1.4.1
Overview
19
1.4.2
General comments and notation
20
1.4.3
Examples of
(1 Xl)
structures
22
1.4.4
Si
(001 ) (2X1)
and related semiconductor structures
24
1.4.5
The famous
7X7
stucture ofSi(HI)
27
1.4.6
Various root-three structures
28
1.4.7
Polar semiconductors, such as GaAs(lll)
28
1.4.8
Ionic crystal structures, such as NaCl, CaF-,, MgO or alumina
30
1.5
Introduction to surface electronics
30
1.5.1
Work function,
φ
30
1.5.2
Electron affinity,
χ,
and ionization potential
Φ
30
1.5.3
Surface states and related ideas
31
1.5.4
Surface Br
Uhuin
zone
32
1.5.5
Band bending, due to surface states
32
1.5.6
The image force
32
1.5.7
Screening
33
Further reading for chapter
1 33
Problems for chapter
1 33
Chapter
2
Surfaces in vacuum: ultra-high vacuum techniques and processes
36
2.1
Kinetic theory concepts
36
2.1.1
Arrival rate of atoms at a surface
36
2.1.2
The molecular density,
η
37
2.1.3
The mean free path,
λ
37
2.1.4
The monolayer arrival time,
τ
38
vi
Contents
2.2
Vacuum
concepts
39
2.2.1
System
volumes,
leak rates and pumping speeds
39
2.2.2
The idea of conductance
41
2.2.3
Measurement of system pressure
42
2.3
UHV hardware: pumps, tubes, materials and pressure measurement
42
2.3.1
Introduction: sources of information
42
2.3.2
Types of pump
43
2.3.3
Chambers, tube and flange sizes
44
2.3.4
Choice of materials
45
2.3.5
Pressure measurement and gas composition
46
2.4
Surface preparation and cleaning procedures
:
in situ experiments
47
2.4.1
Cleaning and sample preparation
47
2.4.2
Procedures for in situ experiments
50
2.4.3
Sample transfer devices
51
2.4.4
From laboratory experiments to production processes
52
2.5
Thin film deposition procedures: sources of information
54
2.5.1
Historical descriptions and recent compilations
54
2.5.2
Thermal evaporation and the uniformity of deposits
54
2.5.3
Molecular beam epitaxy and related methods
57
2.5.4
Sputtering and ion beam assisted deposition
57
2.5.5
Chemical vapor deposition techniques
59
Further reading for chapter
2 60
Problems for chapter
2 60
Chapter
3
Electron-based techniques for examining surface and thin film
processes
63
3.1
Classification of surface and microscopy techniques
63
3.1.1
Surface techniques as scattering experiments
63
3.1.2
Reasons for surface sensitivity
64
3.1.3
Microscopic examination of surfaces
65
3.1.4
A cronyms
69
3.2
Diffraction and quasi-elastic scattering techniques
70
3.2.1
LEED
70
3.2.2
RHEED and THEED
72
3.2.3
Elastic, quasi-elastic and inelastic scattering
74
3.3
Inelastic scattering techniques: chemical and electronic state information
76
3.3.1
Electron
spectroscopie
techniques
76
3.3.2
Photoelectron spectroscopies: XPS and UPS
79
3.3.3
Auger electron spectroscopy: energies and atomic physics
81
3.3.4
AES, XPS and UPS in solids and at surfaces
84
3.4
Quantification of Auger spectra
88
3.4.1
General equation describing quantification
88
3.4.2
Ratio techniques
92
3.5
Microscopy-spectroscopy:
SEM,
SAM, SPM, etc.
95
3.5.1
Scanning electron and Auger microscopy
95
Contents
vii
3.5.2
Auger and image analysis of real world samples
98
5.5.3
Towards the highest spatial resolution: (a) SEMISTEM
100
3.5.4
Towards the highest spatial resolution: (b) scanned probe
microscopy-spectroscopy
104
Further reading for chapter
3 105
Problems, talks and projects for chapter
3 105
Chapter
4
Surface processes in adsorption
108
4.1
Chemi-
and physisorption
108
4.2
Statistical physics of adsorption at low coverage
109
4.2.1
General points
109
4.2.2
Localized adsorption: the Langmulr adsorption isotherm
109
4.2.3
The two-dimensional adsorbed gas: Henry law adsorption
110
4.2.4
Interactions and vibrations in higher density adsorbates
113
4.3
Phase diagrams and phase transitions
114
4.3.1
Adsorption in equilibrium with the gas phase
115
4.3.2
Adsorption out of equilibrium with the gas phase
118
4.4
Physisorption: interatomic forces and lattice dynamical models
119
4.4.1
Thermodynamic information from single surface techniques
119
4.4.2
The crystallography of monolayer solids
120
4.4.3
Melting in two dimensions
124
4.4.4
Construction and understanding of phase diagrams
125
4.5
Chemisorption: quantum mechanical models and chemical practice
128
4.5.1
Phases and phase transitions of the lattice gas
128
4.5.2
The
Ή
ewns-Anderson model and beyond
130
4.5.3
Chemisorption: the first stages of oxidation
133
4.5.4
Chemisorption and catalysis: macroeconomics, macromolecules and
microscopy
135
Further reading for chapter
4 141
Problems and projects for chapter
4 141
Chapter
5
Surface processes in epitaxial growth
144
5.1
Introduction: growth modes and nucleation barriers
144
5.1.1
Why are we studying epitaxial growth?
144
5.1.2
Simple models
-
how far can we go?
145
5.1.3
Growth modes and adsorption isotherms
145
5.1.4
Nucleation barriers in classical and atomistic models
145
5.2
Atomistic models and rate equations
149
5.2.1
Rate equations, controlling energies, and simulations
149
5.2.2
Elements of rate equation models
150
5.2.3
Regimes of condensation
152
5.2.4
General equations for the maximum cluster density
154
5.2.5
Comments on individual treatments
155
5.3
Metal nucleation and growth on insulating substrates
157
5.3.1
Microscopy of island growth: metals on alkali halides
157
viii Contents
5.3.2
Metals
on insulators: checks and complications
159
5.3.3
Defect-induced nucleation on oxides and fluorides
161
5.4
Metal deposition studied by
UH
V microscopies
165
5.4.1
In situ
UH
V
SEM
and
LEEM
of metals on metals
165
5.4.2
FIM
studies of surface diffusion on metals
167
5.4.3
Energies from STM and other techniques
169
5.5
Steps, ripening and
interdiffusion
174
5.5. /
Steps as one-dimensional sinks
174
5.5.2
Steps as sources: diffusion and Oswald ripening
176
5.5.3
Interdiffusion
in magnetic multilayers
179
Further reading for chapter
5 181
Problems and projects for chapter
5 181
Chapter
6
Electronic structure and emission processes at metallic surfaces
184
6.1
The electron gas: work function, surface structure and energy
184
6.1.1
Free electron models and density functionals
184
6.1.2
Beyond free electrons: work function, surface structure and energy
190
6.1.3
Values of the work function
193
6.1.4
Values of the surface energy
196
6.2
Electron emission processes
200
6.2.1
Thermionic emission
201
6.2.2
Cold field emission
202
6.2.3
Adsorption and diffusion:
FES, FEM
and thermal field emitters
206
6.2.4
Secondary electron emission
207
6.3
Magnetism at surfaces and in thin films
210
6.3.1
Symmetry, symmetry breaking and phase transitions
210
6.3.2 Anisotropie
interactions in
3D
and 2D magnets
211
6.3.3
Magnetic surface techniques
213
6.3.4
Theories and applications of surface magnetism
218
Further reading for chapter
6 224
Problems and projects for chapter
6 224
Chapter
7
Semiconductor surfaces and interfaces
227
7.1
Structural and electronic effects at semiconductor surfaces
227
7.1.1
Bonding in diamond, graphite, Si, Ge, GaAs, etc.
227
7.1.2
Simple concepts versus detailed computations
229
7.1.3
Tight-binding pseudopotential and
ab initio
models
230
7.2
Case studies of reconstructed semiconductor surfaces
232
7.2.1
GaAs(llO), a charge-neutral surface
232
7.2.2
GaAs(lll), a polar surface
234
7.2.3
Si and
Ge(lll):
why are they so different?
235
7.2.4
Si, Ge and GaAs(OOl), steps and growth
239
7.3
Stresses and strains in semiconductor film growth
242
7.3.1
Thermodynamie and elasticity studies of surfaces
242
7.3.2
Growth on Si(OOl)
245
Contents ix
7.3.3
Strained layer epitaxy: GelSi(OOl) and SilGe(OOl)
249
7.3.4
Growth of compound semiconductors
252
Further reading for chapter
7 256
Problems and projects for chapter
7 257
Chapter
8
Surface processes in thin film devices
260
8.1
Metals and oxides in contact with semiconductors
260
8.1.1
Band bending and rectifying contacts at semiconductor surfaces
260
8.1.2
Simple models of the depletion region
263
8.1.3
Techniques for analyzing semiconductor interfaces
265
8.2
Semiconductor heterojunctions and devices
270
8.2.1
Origins of Schottky barrier heights
270
8.2.2
Semiconductor heterostructures and band offsets
272
8.2.3
Opto-electronic devices and band-gap engineering
21
A
8.2.4
Modulation and 8-doping, strained layers, quantum wires and dots
279
8.3
Conduction processes in thin film devices
280
8.3.1
Conductivity, resistivity and the relaxation time
281
8.3.2
Scattering at surfaces and interfaces in nanostructures
282
8.3.3
Spin dependent scattering and magnetic multilayer devices
284
8.4
Chemical routes to manufacturing
289
8.4.1
Synthetic chemistry and manufacturing: the case of Si Ge-C
289
8.4.2
Chemical routes to opto-electronics andlor nano-magnetics
291
8.4.3
Nano
tubes and the future of flat panel TV
293
8.4.4
Combinatorial materials development and analysis
29
A
Further reading for chapter
8 295
Chapter
9
Postscript
-
where do we go from here?
297
9.1
Electromigration and other degradation effects in nanostructures
297
9.2
What do the various disciplines bring to the table?
299
9.3
What has been left out: future sources of information
301
Appendix A Bibliography
303
Appendix
В
List of acronyms
306
Appendix
С
Units and conversion factors
309
Appendix
D
Resources on the web or CD-ROM
312
Appendix
E
Useful thermodynamic relationships
314
Appendix
F
Conductances and pumping speeds,
С
and
S
318
Appendix
G
Materials for use in ultra-high vacuum
320
Appendix
H UHV
component cleaning procedures
323
Appendix
J
An outline of local density methods
326
Appendix
К
An outline of tight binding models
328
References
331
Index
363
|
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| indexdate | 2024-07-09T21:35:12Z |
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| publisher | Cambridge Univ. Press |
| record_format | marc |
| spelling | Venables, John 1936- Verfasser (DE-588)13597903X aut Introduction to surface and thin film processes John A. Venables Reprint., transferred to digital print. Cambridge [u.a.] Cambridge Univ. Press 2006 XVI, 372 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Hier auch später erschienene, unveränderte Nachdrucke Oberflächenphysik (DE-588)4134881-3 gnd rswk-swf Physikalische Eigenschaft (DE-588)4134738-9 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 s Physikalische Eigenschaft (DE-588)4134738-9 s DE-604 Oberflächenphysik (DE-588)4134881-3 s Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017355528&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Venables, John 1936- Introduction to surface and thin film processes Oberflächenphysik (DE-588)4134881-3 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Dünne Schicht (DE-588)4136925-7 gnd |
| subject_GND | (DE-588)4134881-3 (DE-588)4134738-9 (DE-588)4136925-7 |
| title | Introduction to surface and thin film processes |
| title_auth | Introduction to surface and thin film processes |
| title_exact_search | Introduction to surface and thin film processes |
| title_full | Introduction to surface and thin film processes John A. Venables |
| title_fullStr | Introduction to surface and thin film processes John A. Venables |
| title_full_unstemmed | Introduction to surface and thin film processes John A. Venables |
| title_short | Introduction to surface and thin film processes |
| title_sort | introduction to surface and thin film processes |
| topic | Oberflächenphysik (DE-588)4134881-3 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Dünne Schicht (DE-588)4136925-7 gnd |
| topic_facet | Oberflächenphysik Physikalische Eigenschaft Dünne Schicht |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017355528&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT venablesjohn introductiontosurfaceandthinfilmprocesses |