High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
München
Verl. Dr. Hut
2008
|
| Edition: | 1. Aufl. |
| Series: | Physik
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | VI, 180 S. 210 mm x 148 mm, 286 gr. |
| ISBN: | 9783899638431 |
Staff View
MARC
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| 264 | 1 | |a München |b Verl. Dr. Hut |c 2008 | |
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Record in the Search Index
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| adam_text | TABLE OF CONTENTS 1 INTRODUCTION 1 2 THE CONCEPTS OF CRYSTALLINE SILICON
THIN-FILM SOLAR CELLS 5 2.1 INTRODUCTION 5 2.2 ADVANTAGES OF CRYSTALLINE
SILICON THIN-FILM SOLAR CELLS 5 2.3 LOW-TEMPERATURE APPROACH 6 2.4
HIGH-TEMPERATURE APPROACH 7 2.4.1 EPITAXIAL WAFER-EQUIVALENTS 8 2.4.2
ZONE-MELTED CRYSTALLINE FILMS 10 2.4.3 TRANSFER TECHNIQUES 10 2.5
SUMMARY 11 3 SILICON DEPOSITION BY CHEMICAL VAPOUR DEPOSITION (CVD) 13
3.1 SILICON DEPOSITION TECHNIQUES 13 3.2 PRINCIPLE OF THERMAL
ATMOSPHERIC PRESSURE CVD 14 3.2.1 REACTION KINETICS FOR TRICHLOROSILANE
AND SILICONTETRACHLORIDE 15 3.2.2 GROWTH RATE 16 3.2.3 CHEMICAL YIELD 17
3.2.4DOPANT INCORPORATION 17 3.3 DEPOSITION CONCEPT AND REACTORS AT
FRAUNHOFER ISE 23 3.3.1 DEPOSITION PRINCIPLE 24 3.3.2RTCVD100 25
3.3.3RTCVD160 26 3.3.4CONCVD 27 3.4 PROCESS CONTROL 28 3.4.1 PROCESS
SEQUENCE 28 3.4.2 DOPING 29 3.4.3 LAYER THICKNESS HOMOGENEITY 29
3.4.4EPITAXIAL QUALITY 30 3.5 SUMMARY 31 BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/992162874 DIGITALISIERT DURCH 4 OPTIMISATION OF
CRYSTALLINE SILICON THIN-FILM SOLAR CELLS 33 4.1 BASIC PRINCIPLES 33
4.1.1 SIMULATION TOOL 33 4.1.2HIGH-EFFICIENCY SOLAR CELL PROCESS 35
4.1.3 SCREEN-PRINTING SOLAR CELL PROCESS 35 4.2 OPTIMISATION OF THE
SUBSTRATES 36 4.2.1 PRE-DEPOSITION CLEANING 36 4.2.2BLOCK POSITION OF
OFF-SPEC CAST MC 38 4.2.3 GETTERING OF OFF-SPEC CASTMC SUBSTRATES 40 4.3
OPTIMISATION OF THE EPITAXIAL LAYER 41 4.3.1 EPITAXIAL BSF 41
4.3.2BASELIFETIME 43 4.3.3 BASE THICKNESS 45 4.3.4 BASE DOPING LEVEL 46
4.3.5GRADEDBASEPROFILE 48 4.3.6PRECURSOR 51 4.4 SUMMARY 54 5 EPITAXY OF
EMITTERS 57 5.1 INTRODUCTION 57 5.1.1 ADVANTAGES OF EMITTER DEPOSITION
IN PHOTOVOLTAICS 57 5.1.2LIMITATIONS OF THE DEPOSITION PROCESS AND
REACTOR 58 5.2 P-TYPE EMITTERS ON N-TYPE WAFERS 60 5.2.1 APPROACH AND
SOLAR CELL PROCESS 60 5.2.2 FIRST RESULTS 61 5.2.3 TWO-LAYER EMITTERS 64
5.2.4 FURTHER IMPROVEMENTS 66 5.3 N-TYPE EMITTERS ON P-TYPE WAFERS 67
5.3.1 PHOSPHINE FLOW DURING COOLING 68 5.3.2 SOLAR CELLS WITH TEXTURING
69 5.4 N-TYPE EPITAXIAL EMITTERS FOR CSITF SOLAR CELLS WITH EVAPORATED
CONTACTS.. 71 5.4.1 EMITTER TREATMENTS AFTER DEPOSITION 71 5.4.2
IMPROVED TWO-LAYER EMITTERS 74 5.4.3 SIMULATION OF AN OPTIMISED EMITTER
78 5.4.4RECOMBINATION IN EPITAXIAL EMITTERS 82 SUMMARY 137 5.4.5
IMPLEMENTATION OFTEXTURE 86 5.5 N-TYPE EPITAXIAL EMITTERS FOR CSITF
SOLAR CELLS WITH SCREEN-PRINTED CONTACTS 88 5.5.1 DESIGN OF THE DOPING
PROFILE 88 5.5.2 CONTACT FORMATION 89 5.5.3 SOLAR CELLS 91 5.5.4
ALTERNATIVE EMITTER STRUCTURES 94 5.6 SUMMARY 95 6 HCI GAS ETCHING OF
CRYSTALLINE SILICON 97 6.1 ETCH MECHANISM 97 6.1.1 SURFACE KINETICS 97
6.1.2 ETCH RATE 99 6.1.3 SURFACE MORPHOLOGY 100 6.2 OPTICAL CONFINEMENT
BY SURFACE TEXTURING 103 6.2.1 OPTICAL PROPERTIES 104 6.2.2 ELECTRICAL
PROPERTIES 108 6.3 OPTICAL CONFINEMENT BY POROUS INTERMEDIATE LAYERS 110
6.3.1 FUNCTIONAL PRINCIPLE OF POROUS SILICON 110 6.3.2 CREATION AND
REORGANISATION OF PORES 112 6.3.3EPITAXIAL LAYER QUALITY 114 6.3.4 SOLAR
CELLS 116 6.4 GETTERING EFFECT OF HCI ETCHING 118 6.5 HCI GETTERING OF
MULTICRYSTALLINE WAFERS 120 6.5.1EXPERIMENTALMETHOD 120 6.5.2 VARIATION
OF TEMPERATURE AND HCI CONCENTRATION 121 6.5.3DEPENDENCEONTIME 124 6.6
HCI GETTERING AND EPITAXY ON METALLURGICAL SILICON SUBSTRATES 125 6.6.1
IMPURITY CONCENTRATIONS 126 6.6.2 MICROSCOPIC ANALYSIS OF THE SUBSTRATE
GETTERING 128 6.6.3 EPITAXIAL GROWTH 130 6.6.4 SOLAR CELLS 132 6.7
SUMMARY 134 7 DANKSAGUNG 179 VI 8 OUTLOOK 141 DEUTSCHE ZUSAMMENFASSUNG
143 APPENDIX A SOLAR CELL FUNDAMENTALS 147 APPENDIX A.L I-V
CHARACTERISTICS 147 APPENDIX A.2 RECOMBINATION MECHANISMS 148 APPENDIX B
MEASUREMENTS METHODS 150 APPENDIX B.L SPREADING RESISTANCE PROFILING
(SRP) 150 APPENDIX B.2 SECONDARY ION MASS SPECTROMETRY (SIMS) 151
APPENDIX B.3 GLOW DISCHARGE MASS SPECTROMETRY (GDMS) 151 APPENDIX B.4
NEUTRON ACTIVATION ANALYSIS (NAA) 152 NOMENCLATURES LIST 153 REFERENCES
159 PUBLICATIONS 177
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| author | Schmich, Evelyn Karin |
| author_facet | Schmich, Evelyn Karin |
| author_role | aut |
| author_sort | Schmich, Evelyn Karin |
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| building | Verbundindex |
| bvnumber | BV035268887 |
| ctrlnum | (OCoLC)310130766 (DE-599)DNB992162874 |
| dewey-full | 621.31244 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.31244 |
| dewey-search | 621.31244 |
| dewey-sort | 3621.31244 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Maschinenbau / Maschinenwesen Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1. Aufl. |
| format | Thesis Book |
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| id | DE-604.BV035268887 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T21:30:03Z |
| institution | BVB |
| isbn | 9783899638431 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017074290 |
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| owner_facet | DE-12 DE-91 DE-BY-TUM DE-188 |
| physical | VI, 180 S. 210 mm x 148 mm, 286 gr. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Verl. Dr. Hut |
| record_format | marc |
| series2 | Physik |
| spelling | Schmich, Evelyn Karin Verfasser aut High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells Evelyn Schmich 1. Aufl. München Verl. Dr. Hut 2008 VI, 180 S. 210 mm x 148 mm, 286 gr. txt rdacontent n rdamedia nc rdacarrier Physik Zugl.: Konstanz, Univ., Diss., 2008 Dünnschichtsolarzelle - APCVD-Verfahren - Silicium - Epitaxieschicht - Emitter - Getterung Epitaxieschicht (DE-588)4152546-2 gnd rswk-swf Dünnschichtsolarzelle (DE-588)4150833-6 gnd rswk-swf APCVD-Verfahren (DE-588)4528793-4 gnd rswk-swf Emitter (DE-588)4152082-8 gnd rswk-swf Getterung (DE-588)4157223-3 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Dünnschichtsolarzelle (DE-588)4150833-6 s APCVD-Verfahren (DE-588)4528793-4 s Silicium (DE-588)4077445-4 s Epitaxieschicht (DE-588)4152546-2 s Emitter (DE-588)4152082-8 s Getterung (DE-588)4157223-3 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017074290&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Schmich, Evelyn Karin High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells Dünnschichtsolarzelle - APCVD-Verfahren - Silicium - Epitaxieschicht - Emitter - Getterung Epitaxieschicht (DE-588)4152546-2 gnd Dünnschichtsolarzelle (DE-588)4150833-6 gnd APCVD-Verfahren (DE-588)4528793-4 gnd Emitter (DE-588)4152082-8 gnd Getterung (DE-588)4157223-3 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4152546-2 (DE-588)4150833-6 (DE-588)4528793-4 (DE-588)4152082-8 (DE-588)4157223-3 (DE-588)4077445-4 (DE-588)4113937-9 |
| title | High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells |
| title_auth | High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells |
| title_exact_search | High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells |
| title_full | High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells Evelyn Schmich |
| title_fullStr | High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells Evelyn Schmich |
| title_full_unstemmed | High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells Evelyn Schmich |
| title_short | High-temperature CVD processes for crystalline silicon thin-film and wafer solar cells |
| title_sort | high temperature cvd processes for crystalline silicon thin film and wafer solar cells |
| topic | Dünnschichtsolarzelle - APCVD-Verfahren - Silicium - Epitaxieschicht - Emitter - Getterung Epitaxieschicht (DE-588)4152546-2 gnd Dünnschichtsolarzelle (DE-588)4150833-6 gnd APCVD-Verfahren (DE-588)4528793-4 gnd Emitter (DE-588)4152082-8 gnd Getterung (DE-588)4157223-3 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Dünnschichtsolarzelle - APCVD-Verfahren - Silicium - Epitaxieschicht - Emitter - Getterung Epitaxieschicht Dünnschichtsolarzelle APCVD-Verfahren Emitter Getterung Silicium Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017074290&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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