Impact ionization: numerical treatment for semiconductor device simulation
This work "...briefly introduces the theory needed for a physical understanding of the impact ionization process in semiconductors. It focuses...on computational aspects and empirical numerical studies explaining a way to efficiently calculate impact ionization rates, especially applied to sili...
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| Main Author: | |
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| Format: | Book |
| Language: | English |
| Published: |
Saarbrücken
VDM Verl. Dr. Müller
2008
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| Subjects: | |
| Summary: | This work "...briefly introduces the theory needed for a physical understanding of the impact ionization process in semiconductors. It focuses...on computational aspects and empirical numerical studies explaining a way to efficiently calculate impact ionization rates, especially applied to silicon for semiconductor device simulation"--Back cover. |
| Physical Description: | 116 S. |
| ISBN: | 9783639082968 |
Staff View
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Record in the Search Index
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| id | DE-604.BV035157944 |
| illustrated | Not Illustrated |
| index_date | 2024-07-02T22:49:30Z |
| indexdate | 2024-07-09T21:26:18Z |
| institution | BVB |
| isbn | 9783639082968 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016965104 |
| oclc_num | 374675504 |
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| physical | 116 S. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
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| publisher | VDM Verl. Dr. Müller |
| record_format | marc |
| spelling | May, Christian Peter Verfasser aut Impact ionization numerical treatment for semiconductor device simulation Christian Peter May Saarbrücken VDM Verl. Dr. Müller 2008 116 S. txt rdacontent n rdamedia nc rdacarrier This work "...briefly introduces the theory needed for a physical understanding of the impact ionization process in semiconductors. It focuses...on computational aspects and empirical numerical studies explaining a way to efficiently calculate impact ionization rates, especially applied to silicon for semiconductor device simulation"--Back cover. Electron impact ionization Numerical analysis Semiconductors Silicon Ladungstransport (DE-588)4166400-0 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Simulation (DE-588)4055072-2 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s Ladungstransport (DE-588)4166400-0 s Simulation (DE-588)4055072-2 s DE-604 |
| spellingShingle | May, Christian Peter Impact ionization numerical treatment for semiconductor device simulation Electron impact ionization Numerical analysis Semiconductors Silicon Ladungstransport (DE-588)4166400-0 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Simulation (DE-588)4055072-2 gnd |
| subject_GND | (DE-588)4166400-0 (DE-588)4113826-0 (DE-588)4055072-2 |
| title | Impact ionization numerical treatment for semiconductor device simulation |
| title_auth | Impact ionization numerical treatment for semiconductor device simulation |
| title_exact_search | Impact ionization numerical treatment for semiconductor device simulation |
| title_exact_search_txtP | Impact ionization numerical treatment for semiconductor device simulation |
| title_full | Impact ionization numerical treatment for semiconductor device simulation Christian Peter May |
| title_fullStr | Impact ionization numerical treatment for semiconductor device simulation Christian Peter May |
| title_full_unstemmed | Impact ionization numerical treatment for semiconductor device simulation Christian Peter May |
| title_short | Impact ionization |
| title_sort | impact ionization numerical treatment for semiconductor device simulation |
| title_sub | numerical treatment for semiconductor device simulation |
| topic | Electron impact ionization Numerical analysis Semiconductors Silicon Ladungstransport (DE-588)4166400-0 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Simulation (DE-588)4055072-2 gnd |
| topic_facet | Electron impact ionization Numerical analysis Semiconductors Silicon Ladungstransport Halbleiterbauelement Simulation |
| work_keys_str_mv | AT maychristianpeter impactionizationnumericaltreatmentforsemiconductordevicesimulation |