Fundamentals of infrared detector materials:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Bellingham, Wash.
SPIE Press
2007
|
| Series: | Tutorial texts series
76 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Includes bibliographical references (p. 165-168) and index |
| Physical Description: | XI, 173 S. Ill., graph. Darst. |
| ISBN: | 9780819467317 |
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MARC
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| 100 | 1 | |a Kinch, Michael A. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Fundamentals of infrared detector materials |c Michael A. Kinch |
| 264 | 1 | |a Bellingham, Wash. |b SPIE Press |c 2007 | |
| 300 | |a XI, 173 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 500 | |a Includes bibliographical references (p. 165-168) and index | ||
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Record in the Search Index
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|---|---|
| adam_text | Contents
1
Introduction
1
2
IR Detector Performance
Criteria
5
2.1 Photon
Detectors
5
2.1.1
IR detector
operating
temperature
5
2.1.2
IR detector
sensitivity
7
2.2
Thermal Detectors
9
3
IR Detector Materials:
A Technology
Comparison
13
3.1
Intrinsic Direct
Bandgap
Semiconductor
13
3.2
Extrinsic Semiconductor
16
3.3
Quantum Well
IR Photodetectors
(QWIPs)
18
3.4
Silicon Schottky Barrier Detectors
23
3.5
High-Temperature Superconductor
26
3.6
Conclusions
27
4
Intrinsic Direct
Bandgap
Semiconductors
31
4.1
Minority Carrier Lifetime
32
4.1.1
Radiative recombination
32
4.1.2
Auger recombination
33
4.1.3
Shockley-Read recombination
34
4.2
Diode Dark Current Models
34
4.3
Binary Compounds
35
4.3.1
Indium antimonide: InSb
35
4.4
Ternary Alloys
37
4.4.1
Mercury cadmium telluride:
Hg1_ïCdïTe
37
4.5
Pb^
ЅпДе
42
4.5.1
Minority carrier lifetime
43
4.5.2
Dark currents
44
4.6
Type III Superlattices
45
4.6.1 Superlattice
bandstructure
45
4.6.2
Band offsets and strain
47
4.6.3
Interdiffusion
in HgTe/CdTe superlattices
48
4.6.4
Misfit dislocations
48
4.6.5
Absorption coefficient
49
ix
Contents
4.6.6
Effective mass
51
4.6.7
Minority carrier lifetime 52
4.7
Type II Superlattices
53
4.7.1
Minority carrier lifetime 54
4 8
Direct
Bandgap
Materials: Conclusions
57
4.8.1
HgCdTe
Ц
4.8.2
InSb 57
4.8.3
PbSnTe 58
4.8.4
Type III superlattices 59
4.8.5
Type II superlattices 59
4.8.6
Final thoughts 59
HgCdTe: Material of Choice for
Tactical Systems 61
5.1
HgCdTe Material Properties
61
5.1.1
Material growth 61
5.1.2
HgCdTe annealing
65
5.1.3
HgCdTe properties 67
5.2
HgCdTe Device Architectures
75
5.2.1
DLH J
architecture
76
5.2.2
Bump-bonded ion implant architecture
77
5.2.3
Vertically integrated
photodiode
(VIP
and HDVIP)
architectures
77
5.3
ROIC Requirements
81
5.3.1
Detector performance: Modeling
82
5.3.2
Dark current in HgCdTe diodes
82
5.3.3 1//
noise
87
5.4
Detector Performance
89
5.5
HgCdTe: Conclusions
91
>
Uncooled Detection
93
6.1
Thermal Detection
93
6.2
Photon Detection
95
6.2.1
HOT detector theory
95
6.2.2
HOT detector data
101
6.2.3
HOT detector contacts
103
6.2.4
HOT detector options
103
6.3
Uncooled Photon vs. Thermal Detection Limits
105
6.4
Uncooied Detection: Conclusions
107
7
HgCdTe Electron Avalanche
Photodiodes
(EAPDs)
109
7.1
Mclntyre s Avalanche
Photodiode
Model
110
7.2
Physics of HgCdTe EAPDs
112
7.2.1
High-energy scattering rates
113
7.2.2
Electron impact ionization rate ¡n HgCdTe
115
Contents xi
7.3
Empirical
Model
for
Electron
Avalanche Gain in HgCdTe
121
7.4
Room-Temperature HgCdTe APD Performance
129
7.5
Monte Carlo Modeling
131
7.6
Conclusions
133
8
Future HgCdTe Developments
135
8.1
Dark Current Model
135
8.1.1
N-side
136
8.1.2
P-side
137
8.2
The Separate Absorption and Detection Diode Structure
139
8.3
Multicolor and Multispectral FPAs
141
8.4
High-Density FPAs
143
8.5
Low Background Operation
143
8.5.1
LWIR14Mmat40K
143
8.5.2
Low background operation at a cutoff of
25
μηι
144
8.6
Higher Operating Temperatures
145
8.6.1
High-gain APDs
147
8.7
Conclusion
148
Epilogue
149
Appendix A: Mathcad Program for HgCdTe Diode Dark
Current Modeling
151
References
165
About the Author
169
Index
171
|
| adam_txt |
Contents
1
Introduction
1
2
IR Detector Performance
Criteria
5
2.1 Photon
Detectors
5
2.1.1
IR detector
operating
temperature
5
2.1.2
IR detector
sensitivity
7
2.2
Thermal Detectors
9
3
IR Detector Materials:
A Technology
Comparison
13
3.1
Intrinsic Direct
Bandgap
Semiconductor
13
3.2
Extrinsic Semiconductor
16
3.3
Quantum Well
IR Photodetectors
(QWIPs)
18
3.4
Silicon Schottky Barrier Detectors
23
3.5
High-Temperature Superconductor
26
3.6
Conclusions
27
4
Intrinsic Direct
Bandgap
Semiconductors
31
4.1
Minority Carrier Lifetime
32
4.1.1
Radiative recombination
32
4.1.2
Auger recombination
33
4.1.3
Shockley-Read recombination
34
4.2
Diode Dark Current Models
34
4.3
Binary Compounds
35
4.3.1
Indium antimonide: InSb
35
4.4
Ternary Alloys
37
4.4.1
Mercury cadmium telluride:
Hg1_ïCdïTe
37
4.5
Pb^
ЅпДе
42
4.5.1
Minority carrier lifetime
43
4.5.2
Dark currents
44
4.6
Type III Superlattices
45
4.6.1 Superlattice
bandstructure
45
4.6.2
Band offsets and strain
47
4.6.3
Interdiffusion
in HgTe/CdTe superlattices
48
4.6.4
Misfit dislocations
48
4.6.5
Absorption coefficient
49
ix
Contents
4.6.6
Effective mass
51
4.6.7
Minority carrier lifetime 52
4.7
Type II Superlattices
53
4.7.1
Minority carrier lifetime 54
4 8
Direct
Bandgap
Materials: Conclusions
57
4.8.1
HgCdTe
Ц
4.8.2
InSb 57
4.8.3
PbSnTe 58
4.8.4
Type III superlattices 59
4.8.5
Type II superlattices 59
4.8.6
Final thoughts 59
HgCdTe: Material of Choice for
Tactical Systems 61
5.1
HgCdTe Material Properties
61
5.1.1
Material growth 61
5.1.2
HgCdTe annealing
65
5.1.3
HgCdTe properties 67
5.2
HgCdTe Device Architectures
75
5.2.1
DLH J
architecture
76
5.2.2
Bump-bonded ion implant architecture
77
5.2.3
Vertically integrated
photodiode
(VIP
and HDVIP)
architectures
77
5.3
ROIC Requirements
81
5.3.1
Detector performance: Modeling
82
5.3.2
Dark current in HgCdTe diodes
82
5.3.3 1//
noise
87
5.4
Detector Performance
89
5.5
HgCdTe: Conclusions
91
>
Uncooled Detection
93
6.1
Thermal Detection
93
6.2
Photon Detection
95
6.2.1
HOT detector theory
95
6.2.2
HOT detector data
101
6.2.3
HOT detector contacts
103
6.2.4
HOT detector options
103
6.3
Uncooled Photon vs. Thermal Detection Limits
105
6.4
Uncooied Detection: Conclusions
107
7
HgCdTe Electron Avalanche
Photodiodes
(EAPDs)
109
7.1
Mclntyre's Avalanche
Photodiode
Model
110
7.2
Physics of HgCdTe EAPDs
112
7.2.1
High-energy scattering rates
113
7.2.2
Electron impact ionization rate ¡n HgCdTe
115
Contents xi
7.3
Empirical
Model
for
Electron
Avalanche Gain in HgCdTe
121
7.4
Room-Temperature HgCdTe APD Performance
129
7.5
Monte Carlo Modeling
131
7.6
Conclusions
133
8
Future HgCdTe Developments
135
8.1
Dark Current Model
135
8.1.1
N-side
136
8.1.2
P-side
137
8.2
The Separate Absorption and Detection Diode Structure
139
8.3
Multicolor and Multispectral FPAs
141
8.4
High-Density FPAs
143
8.5
Low Background Operation
143
8.5.1
LWIR14Mmat40K
143
8.5.2
Low background operation at a cutoff of
25
μηι
144
8.6
Higher Operating Temperatures
145
8.6.1
High-gain APDs
147
8.7
Conclusion
148
Epilogue
149
Appendix A: Mathcad Program for HgCdTe Diode Dark
Current Modeling
151
References
165
About the Author
169
Index
171 |
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| id | DE-604.BV035090889 |
| illustrated | Illustrated |
| index_date | 2024-07-02T22:10:38Z |
| indexdate | 2024-07-09T21:21:59Z |
| institution | BVB |
| isbn | 9780819467317 |
| language | English |
| lccn | 2007028531 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016759010 |
| oclc_num | 154678513 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR DE-522 DE-83 |
| owner_facet | DE-355 DE-BY-UBR DE-522 DE-83 |
| physical | XI, 173 S. Ill., graph. Darst. |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | SPIE Press |
| record_format | marc |
| series | Tutorial texts series |
| series2 | Tutorial texts series |
| spelling | Kinch, Michael A. Verfasser aut Fundamentals of infrared detector materials Michael A. Kinch Bellingham, Wash. SPIE Press 2007 XI, 173 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Tutorial texts series 76 Includes bibliographical references (p. 165-168) and index Infrared detectors Materials Halbleiter (DE-588)4022993-2 gnd rswk-swf Infrarotdetektor (DE-588)4161692-3 gnd rswk-swf Infrarotdetektor (DE-588)4161692-3 s Halbleiter (DE-588)4022993-2 s DE-604 Tutorial texts series 76 (DE-604)BV005345161 76 Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016759010&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Kinch, Michael A. Fundamentals of infrared detector materials Tutorial texts series Infrared detectors Materials Halbleiter (DE-588)4022993-2 gnd Infrarotdetektor (DE-588)4161692-3 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4161692-3 |
| title | Fundamentals of infrared detector materials |
| title_auth | Fundamentals of infrared detector materials |
| title_exact_search | Fundamentals of infrared detector materials |
| title_exact_search_txtP | Fundamentals of infrared detector materials |
| title_full | Fundamentals of infrared detector materials Michael A. Kinch |
| title_fullStr | Fundamentals of infrared detector materials Michael A. Kinch |
| title_full_unstemmed | Fundamentals of infrared detector materials Michael A. Kinch |
| title_short | Fundamentals of infrared detector materials |
| title_sort | fundamentals of infrared detector materials |
| topic | Infrared detectors Materials Halbleiter (DE-588)4022993-2 gnd Infrarotdetektor (DE-588)4161692-3 gnd |
| topic_facet | Infrared detectors Materials Halbleiter Infrarotdetektor |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016759010&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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| work_keys_str_mv | AT kinchmichaela fundamentalsofinfrareddetectormaterials |