Charakterisierung des Relaxationsverhaltens von Si 1-x Ge x /Si(001) Schichten mittels Röntgentopographie:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Elektronisch E-Book |
| Sprache: | German |
| Veröffentlicht: |
2001
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| Schlagworte: | |
| Online-Zugang: | http://dochost.rz.hu-berlin.de/dissertationen/pfeiffer-jens-uwe-2001-12-14/ |
| Beschreibung: | 140 S. Ill., graph. Darst. |
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| 245 | 1 | 0 | |a Charakterisierung des Relaxationsverhaltens von Si 1-x Ge x /Si(001) Schichten mittels Röntgentopographie |c von Jens-Uwe Pfeiffer |
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Datensatz im Suchindex
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| author | Pfeiffer, Jens-Uwe |
| author_facet | Pfeiffer, Jens-Uwe |
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| spelling | Pfeiffer, Jens-Uwe Verfasser aut Charakterisierung des Relaxationsverhaltens von Si 1-x Ge x /Si(001) Schichten mittels Röntgentopographie von Jens-Uwe Pfeiffer 2001 140 S. Ill., graph. Darst. txt rdacontent c rdamedia cr rdacarrier Berlin, Humboldt-Univ., Diss., 2001 (DE-588)4113937-9 Hochschulschrift gnd-content dochost.rz.hu-berlin.de /dissertationen/pfeiffer-jens-uwe-2001-12-14 / 80 http://dochost.rz.hu-berlin.de/dissertationen/pfeiffer-jens-uwe-2001-12-14/ http |
| spellingShingle | Pfeiffer, Jens-Uwe Charakterisierung des Relaxationsverhaltens von Si 1-x Ge x /Si(001) Schichten mittels Röntgentopographie |
| subject_GND | (DE-588)4113937-9 |
| title | Charakterisierung des Relaxationsverhaltens von Si 1-x Ge x /Si(001) Schichten mittels Röntgentopographie |
| title_auth | Charakterisierung des Relaxationsverhaltens von Si 1-x Ge x /Si(001) Schichten mittels Röntgentopographie |
| title_exact_search | Charakterisierung des Relaxationsverhaltens von Si 1-x Ge x /Si(001) Schichten mittels Röntgentopographie |
| title_full | Charakterisierung des Relaxationsverhaltens von Si 1-x Ge x /Si(001) Schichten mittels Röntgentopographie von Jens-Uwe Pfeiffer |
| title_fullStr | Charakterisierung des Relaxationsverhaltens von Si 1-x Ge x /Si(001) Schichten mittels Röntgentopographie von Jens-Uwe Pfeiffer |
| title_full_unstemmed | Charakterisierung des Relaxationsverhaltens von Si 1-x Ge x /Si(001) Schichten mittels Röntgentopographie von Jens-Uwe Pfeiffer |
| title_short | Charakterisierung des Relaxationsverhaltens von Si 1-x Ge x /Si(001) Schichten mittels Röntgentopographie |
| title_sort | charakterisierung des relaxationsverhaltens von si 1 x ge x si 001 schichten mittels rontgentopographie |
| topic_facet | Hochschulschrift |
| url | http://dochost.rz.hu-berlin.de/dissertationen/pfeiffer-jens-uwe-2001-12-14/ |
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