Holdings: Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel

Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel:

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Bibliographic Details
Main Author:	Xu, Dong (Author)
Format:	Thesis Book
Language:	English
Published:	1996
Subjects:	Indiumphosphid Galliumarsenid Aluminium Indiumarsenid Feldeffekttransistor Aluminiumarsenid Indium HEMT Arsen Hochschulschrift
Physical Description:	IV, 143 S. Ill., graph. Darst.

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MARC


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008	100417s1996 ad\|\| m\|\|\| 00\|\|\| eng d
035			\|a (OCoLC)916950972
035			\|a (DE-599)BVBBV024836990
040			\|a DE-604 \|b ger \|e rakwb
041	0		\|a eng
049			\|a DE-11
100	1		\|a Xu, Dong \|e Verfasser \|4 aut
245	1	0	\|a Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel \|c Xu, Dong
264		1	\|c 1996
300			\|a IV, 143 S. \|b Ill., graph. Darst.
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
338			\|b nc \|2 rdacarrier
502			\|a München, Techn. Univ., Diss., 1997
650	0	7	\|a Indiumphosphid \|0 (DE-588)4161535-9 \|2 gnd \|9 rswk-swf
650	0	7	\|a Galliumarsenid \|0 (DE-588)4019155-2 \|2 gnd \|9 rswk-swf
650	0	7	\|a Aluminium \|0 (DE-588)4001573-7 \|2 gnd \|9 rswk-swf
650	0	7	\|a Indiumarsenid \|0 (DE-588)4249718-8 \|2 gnd \|9 rswk-swf
650	0	7	\|a Feldeffekttransistor \|0 (DE-588)4131472-4 \|2 gnd \|9 rswk-swf
650	0	7	\|a Aluminiumarsenid \|0 (DE-588)4324566-3 \|2 gnd \|9 rswk-swf
650	0	7	\|a Indium \|0 (DE-588)4161516-5 \|2 gnd \|9 rswk-swf
650	0	7	\|a HEMT \|0 (DE-588)4211873-6 \|2 gnd \|9 rswk-swf
650	0	7	\|a Arsen \|0 (DE-588)4003041-6 \|2 gnd \|9 rswk-swf
655		7	\|0 (DE-588)4113937-9 \|a Hochschulschrift \|2 gnd-content
689	0	0	\|a HEMT \|0 (DE-588)4211873-6 \|D s
689	0	1	\|a Indiumarsenid \|0 (DE-588)4249718-8 \|D s
689	0	2	\|a Aluminiumarsenid \|0 (DE-588)4324566-3 \|D s
689	0	3	\|a Galliumarsenid \|0 (DE-588)4019155-2 \|D s
689	0	4	\|a Indiumphosphid \|0 (DE-588)4161535-9 \|D s
689	0		\|5 DE-604
689	1	0	\|a Indium \|0 (DE-588)4161516-5 \|D s
689	1		\|8 1\p \|5 DE-604
689	2	0	\|a Aluminium \|0 (DE-588)4001573-7 \|D s
689	2		\|8 2\p \|5 DE-604
689	3	0	\|a Arsen \|0 (DE-588)4003041-6 \|D s
689	3		\|8 3\p \|5 DE-604
689	4	0	\|a Feldeffekttransistor \|0 (DE-588)4131472-4 \|D s
689	4		\|8 4\p \|5 DE-604
999			\|a oai:aleph.bib-bvb.de:BVB01-019514700
883	1		\|8 1\p \|a cgwrk \|d 20201028 \|q DE-101 \|u https://d-nb.info/provenance/plan#cgwrk
883	1		\|8 2\p \|a cgwrk \|d 20201028 \|q DE-101 \|u https://d-nb.info/provenance/plan#cgwrk
883	1		\|8 3\p \|a cgwrk \|d 20201028 \|q DE-101 \|u https://d-nb.info/provenance/plan#cgwrk
883	1		\|8 4\p \|a cgwrk \|d 20201028 \|q DE-101 \|u https://d-nb.info/provenance/plan#cgwrk

Record in the Search Index

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author_role	aut
author_sort	Xu, Dong
author_variant	d x dx
building	Verbundindex
bvnumber	BV024836990
ctrlnum	(OCoLC)916950972 (DE-599)BVBBV024836990
format	Thesis Book
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genre	(DE-588)4113937-9 Hochschulschrift gnd-content
genre_facet	Hochschulschrift
id	DE-604.BV024836990
illustrated	Illustrated
indexdate	2024-07-09T22:22:10Z
institution	BVB
language	English
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-019514700
oclc_num	916950972
open_access_boolean
owner	DE-11
owner_facet	DE-11
physical	IV, 143 S. Ill., graph. Darst.
publishDate	1996
publishDateSearch	1996
publishDateSort	1996
record_format	marc
spelling	Xu, Dong Verfasser aut Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel Xu, Dong 1996 IV, 143 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Techn. Univ., Diss., 1997 Indiumphosphid (DE-588)4161535-9 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Aluminium (DE-588)4001573-7 gnd rswk-swf Indiumarsenid (DE-588)4249718-8 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Aluminiumarsenid (DE-588)4324566-3 gnd rswk-swf Indium (DE-588)4161516-5 gnd rswk-swf HEMT (DE-588)4211873-6 gnd rswk-swf Arsen (DE-588)4003041-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content HEMT (DE-588)4211873-6 s Indiumarsenid (DE-588)4249718-8 s Aluminiumarsenid (DE-588)4324566-3 s Galliumarsenid (DE-588)4019155-2 s Indiumphosphid (DE-588)4161535-9 s DE-604 Indium (DE-588)4161516-5 s 1\p DE-604 Aluminium (DE-588)4001573-7 s 2\p DE-604 Arsen (DE-588)4003041-6 s 3\p DE-604 Feldeffekttransistor (DE-588)4131472-4 s 4\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk
spellingShingle	Xu, Dong Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel Indiumphosphid (DE-588)4161535-9 gnd Galliumarsenid (DE-588)4019155-2 gnd Aluminium (DE-588)4001573-7 gnd Indiumarsenid (DE-588)4249718-8 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Aluminiumarsenid (DE-588)4324566-3 gnd Indium (DE-588)4161516-5 gnd HEMT (DE-588)4211873-6 gnd Arsen (DE-588)4003041-6 gnd
subject_GND	(DE-588)4161535-9 (DE-588)4019155-2 (DE-588)4001573-7 (DE-588)4249718-8 (DE-588)4131472-4 (DE-588)4324566-3 (DE-588)4161516-5 (DE-588)4211873-6 (DE-588)4003041-6 (DE-588)4113937-9
title	Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel
title_auth	Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel
title_exact_search	Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel
title_full	Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel Xu, Dong
title_fullStr	Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel Xu, Dong
title_full_unstemmed	Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel Xu, Dong
title_short	Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel
title_sort	sub 0 2 mym double sided modulation doped inalas ingaas heterojunction field effect transistor with inas layer in the channel
topic	Indiumphosphid (DE-588)4161535-9 gnd Galliumarsenid (DE-588)4019155-2 gnd Aluminium (DE-588)4001573-7 gnd Indiumarsenid (DE-588)4249718-8 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Aluminiumarsenid (DE-588)4324566-3 gnd Indium (DE-588)4161516-5 gnd HEMT (DE-588)4211873-6 gnd Arsen (DE-588)4003041-6 gnd
topic_facet	Indiumphosphid Galliumarsenid Aluminium Indiumarsenid Feldeffekttransistor Aluminiumarsenid Indium HEMT Arsen Hochschulschrift
work_keys_str_mv	AT xudong sub02mymdoublesidedmodulationdopedinalasingaasheterojunctionfieldeffecttransistorwithinaslayerinthechannel

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