APA (7th ed.) Citation

Xu, D. (1996). Sub-0.2 Mym double-sided modulation doped InAlAs-InGaAs heterojunction field effect transistor with InAs layer in the channel.

Chicago Style (17th ed.) Citation

Xu, Dong. Sub-0.2 Mym Double-sided Modulation Doped InAlAs-InGaAs Heterojunction Field Effect Transistor with InAs Layer in the Channel. 1996.

MLA (9th ed.) Citation

Xu, Dong. Sub-0.2 Mym Double-sided Modulation Doped InAlAs-InGaAs Heterojunction Field Effect Transistor with InAs Layer in the Channel. 1996.