Optoelectronic devices: design, modeling, and simulation
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| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Cambridge [u.a.]
Cambridge University Press
2009
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XII, 361 S. graph. Darst. |
| ISBN: | 0521875102 9780521875103 |
Staff View
MARC
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| 245 | 1 | 0 | |a Optoelectronic devices |b design, modeling, and simulation |c Xun Li |
| 264 | 1 | |a Cambridge [u.a.] |b Cambridge University Press |c 2009 | |
| 300 | |a XII, 361 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
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| 650 | 4 | |a Optoelectronic devices |x Design and construction | |
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Record in the Search Index
| _version_ | 1804140651550343168 |
|---|---|
| adam_text | Contents
Preface
page
xi
Introduction
1
1.1
The underlying physics in device operation
1
1.2
Modeling and simulation methodologies
1
1.3
Device modeling aspects
3
1.4
Device modeling techniques
3
1.5
Overview
5
Optical models
6
2.1
The wave equation in active media
6
2.1.1
Maxwell equations
6
2.1.2
The wave equation
8
2.2
The reduced wave equation in the time domain
9
2.3
The reduced wave equation in the space domain
11
2.4
The reduced wave equation in both time and space
domains
—
the traveling wave model
12
2.4.1
The wave equation in fully confined structures
12
2.4.2
The wave equation in partially confined structures
17
2.4.3
The wave equation in periodically corrugated structures
21
2.5
Broadband optical traveling wave models
31
2.5.1
The direct convolution model
32
2.5.2
The effective Bloch equation model
34
2.5.3
The wavelength slicing model
37
2.6
Separation of spatial and temporal dependences
—
the standing wave model
40
2.7
Photon rate and phase equations
—
the behavior model
47
2.8
The spontaneous emission noise treatment
48
Material model I: Semiconductor band structures
54
3.1
Single electron in bulk semiconductors
54
3.1.1
The
Schrödinger
equation and Hamiltonian operator
54
3.1.2
Bloch s theorem and band structure
57
Contents
3.1.3
Solution
at
к
= 0:
Kane s model
65
3.1.4
Solution at
к
φ
0:
Luttinger-Kohn s model
71
3.1.5
Solution under
4x4
Hamiltonian and axial approximation
76
3.1.6
Hamiltonians for different semiconductors
80
3.2
Single electron in semiconductor quantum well structures
80
3.2.1
The effective mass theory and governing equation
80
3.2.2
Conduction band (without degeneracy)
84
3.2.3
Valence band (with degeneracy)
85
3.2.4
Quantum well band structures
87
3.3
Single electron in strained layer structures
91
3.3.1
A general approach
91
3.3.2
Strained bulk semiconductors
93
3.3.3
Strained layer quantum well structures
95
3.3.4
Semiconductors with the zinc blende structure
96
3.4
Summary of the
k—p
theory
98
Material model II: Optical gain
102
4.1
A comprehensive model with many-body effect
102
4.1.1
Introduction
102
4.1.2
The
Heisenberg
equation
103
4.1.3
A comprehensive model
104
4.1.4
General governing equations
109
4.2
The free-carrier model as a zeroth order solution
122
4.2.1
The free-carrier model
122
4.2.2
The carrier rate equation
123
4.2.3
The polariton rate equation
126
4.2.4
The susceptibility
127
4.3
The screened Coulomb interaction model as a first order solution
128
4.3.1
The screened Coulomb interaction model
128
4.3.2
The screened Coulomb potential
129
4.3.3
Solution under zero injection and the
exciten
absorption
133
4.3.4
Solution under arbitrary injection
137
4.4
The many-body correlation model as a second order solution
140
4.4.1
The many-body correlation model
140
4.4.2
A semi-analytical solution
141
4.4.3
The full numerical solution
144
Carrier transport and thermal diffusion models
151
5.1
The carrier transport model
15
1
5.1.1
Poisson
and carrier continuity equations
151
5.1.2
The drift and diffusion model for a non-active region
152
5.1.3
The carrier transport model for the active region
154
5.1.4
Simplifications of the carrier transport model
158
Contents
vii
5.1.5
The free-carrier
transport
model
160
5.1.6
Recombination rates
162
5.2
The carrier rate equation model
164
5.3
The thermal diffusion model
165
5.3.1
The classical thermal diffusion model
165
5.3.2
A one-dimensional thermal diffusion model
168
Solution techniques for optical equations
172
6.1
The optical mode in the cross-sectional area
172
6.2
Traveling wave equations
173
6.2.1
The finite difference method
173
6.2.2
The split-step method
183
6.2.3
Time domain convolution through the digital filter
188
6.3
Standing wave equations
191
Solution techniques for material gain equations
200
7.1
Single electron band structures
200
7.2
Material gain calculations
200
7.2.1
The free-carrier gain model
200
7.2.2
The screened Coulomb interaction gain model
205
7.2.3
The many-hody gain model
205
7.3
Parameterization of material properties
211
Solution techniques for carrier transport and thermal diffusion equations
214
8.1
The static carrier transport equation
214
8.1.1
Scaling
215
8.1.2
Boundary conditions
216
8.1.3
The initial solution
218
8.1.4
The finite difference discretization
218
8.1.5
Solution of non-linear algebraic equations
228
8.2
The transient carrier transport equation
231
8.3
The carrier rate equation
232
8.4
The thermal diffusion equation
233
Numerical analysis of device performance
236
9.1
A general approach
236
9.1.1
The material gain treatment
236
9.1.2
The quasi-three-dimensional treatment
238
9.2
Device performance analysis
240
9.2.1
The steady state analysis
240
9.2.2
The small-signal dynamic analysis
243
9.2.3
The large-signal dynamic analysis
245
9.3
Model calibration and validation
246
viii Contente
10
Design
and modeling examples of semiconductor laser diodes
251
10.1
Design and modeling of the active region for optical gain
251
10.1.1
The active region material
251
10.1.2
The active region structure
255
10.2
Design and modeling of the cross-sectional structure
for optical and carrier confinement
259
10.2.1
General considerations in the layer stack design
259
10.2.2
The ridge waveguide structure
260
10.2.3
The buried heterostructure
265
10.2.4
Comparison between the ridge waveguide structure and buried
heterostructure
268
10.3
Design and modeling of the cavity for lasing oscillation
269
10.3.1
The Fabry-Perot laser
269
10.3.2
Distributed feedback lasers in different coupling
mechanisms through grating design
271
10.3.3
Lasers with multiple section designs
281
11
Design and modeling examples of other solitary optoelectronic devices
288
11.1
The electro-absorption modulator
288
11.1.1
The device structure
288
11.1.2
Simulated material properties and device performance
288
11.1.3
Design for high extinction ratio and low insertion loss
292
11.1.4
Design
f
or polarization independent absorption
297
11.2
The semiconductor optical amplifier
299
11.2.1
The device structure
299
11.2.2
Simulated semiconductor optical amplifier performance
300
11.2.3
Design for performance enhancement
302
11.3
The
superluminescent
light emitting diode
305
11.3.1
The device structure
305
11.3.2
Simulated
superluminescent
light emitting diode performance
305
11.3.3
Design for performance enhancement
306
12
Design and modeling examples of integrated optoelectronic devices
313
12.1
The integrated semiconductor distributed feedback laser and
electro-absorption modulator
313
12.1.1
The device structure
313
12.1.2
The interface
315
12.1.3
Simulated distributed feedback laser performance
315
12.1.4
Simulated electro-absorption modulator performance
317
12.2
The integrated semiconductor distributed feedback
laser and monitoring photodetector
321
12.2.1
The device structure
321
Contents
12.2.2
Simulated distributed feedback laser performance
325
12.2.3
Crosstalk modeling
326
Appendices
332
A Lowdin s renormalization theory
332
В
Integrations in the many-body gain model
334
С
Cash-Karp s implementation of the fifth order
Runge-
Kutta method
347
D
The solution of sparse linear equations
348
D.I The direct method
349
D.2 The iterative method
351
Index
356
|
| any_adam_object | 1 |
| author | Li, Xun |
| author_facet | Li, Xun |
| author_role | aut |
| author_sort | Li, Xun |
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| dewey-sort | 3621.381045 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| language | English |
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| physical | XII, 361 S. graph. Darst. |
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| spelling | Li, Xun Verfasser aut Optoelectronic devices design, modeling, and simulation Xun Li Cambridge [u.a.] Cambridge University Press 2009 XII, 361 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Optoelectronic devices Design and construction Optoelektronisches Bauelement (DE-588)4043689-5 gnd rswk-swf Optoelektronisches Bauelement (DE-588)4043689-5 s DE-604 Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018600258&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Li, Xun Optoelectronic devices design, modeling, and simulation Optoelectronic devices Design and construction Optoelektronisches Bauelement (DE-588)4043689-5 gnd |
| subject_GND | (DE-588)4043689-5 |
| title | Optoelectronic devices design, modeling, and simulation |
| title_auth | Optoelectronic devices design, modeling, and simulation |
| title_exact_search | Optoelectronic devices design, modeling, and simulation |
| title_full | Optoelectronic devices design, modeling, and simulation Xun Li |
| title_fullStr | Optoelectronic devices design, modeling, and simulation Xun Li |
| title_full_unstemmed | Optoelectronic devices design, modeling, and simulation Xun Li |
| title_short | Optoelectronic devices |
| title_sort | optoelectronic devices design modeling and simulation |
| title_sub | design, modeling, and simulation |
| topic | Optoelectronic devices Design and construction Optoelektronisches Bauelement (DE-588)4043689-5 gnd |
| topic_facet | Optoelectronic devices Design and construction Optoelektronisches Bauelement |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018600258&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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