MOSFET modeling for circuit analysis and design:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Hackensack, NY <<[u.a.]>>
World Scientific
2007
|
| Schriftenreihe: | International series on advances in solid state electronics and technology
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXIV, 418 S. Ill., zahlr. graph. Darst. |
| ISBN: | 9812568107 9789812568106 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV024620650 | ||
| 003 | DE-604 | ||
| 005 | 20090910 | ||
| 007 | t | ||
| 008 | 090924s2007 ad|| |||| 00||| eng d | ||
| 020 | |a 9812568107 |9 981-256810-7 | ||
| 020 | |a 9789812568106 |9 978-981-256810-6 | ||
| 035 | |a (OCoLC)255478234 | ||
| 035 | |a (DE-599)GBV524430411 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-83 | ||
| 084 | |a ZN 4870 |0 (DE-625)157415: |2 rvk | ||
| 100 | 1 | |a Galup-Montoro, Carlos |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a MOSFET modeling for circuit analysis and design |c Carlos Galup-Montoro ; Márcio Cherem Schneider |
| 264 | 1 | |a Hackensack, NY <<[u.a.]>> |b World Scientific |c 2007 | |
| 300 | |a XXIV, 418 S. |b Ill., zahlr. graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a International series on advances in solid state electronics and technology | |
| 650 | 0 | 7 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | 1 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Schneider, Márcio Cherem |e Verfasser |4 aut | |
| 856 | 4 | 2 | |m HBZ Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018592647&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-018592647 | ||
Datensatz im Suchindex
| _version_ | 1804140641120157696 |
|---|---|
| adam_text | Contents
Foreword vii
Preface ix
List of Selected Symbols xix
Chapter 1 Introduction 1
1.1 MOS integrated circuits 1
1.2 Compact MOSFET models for circuit analysis and design 2
1.3 A brief history of compact MOS transistor models 3
Bibliography 5
Chapter 2 The MOS Capacitor 7
2.1 Equilibrium electron and hole concentrations 7
2.2 The field effect in bulk semiconductors 9
2.2.1 Fundamental considerations 9
2.2.2 Poisson-Boltzmann equation in bulk semiconductors 10
2.3 The ideal two-terminal MOS structure 14
2.3.1 Small signal equivalent capacitive circuit 17
2.3.2 Ideal C-V plots 21
2.3.3 Effect of work function difference 26
2.3.4 The flat-band voltage 29
2.4 The three-terminal MOS structure with uniformly doped
substrate 32
2.4.1 Quasi-equilibrium electron and hole concentrations 32
2.4.2 Surface potential master equation 35
2.4.3 Small-signal equivalent capacitive circuit in inversion 38
2.4.4 Basic approximations for compact modeling 41
2.4.4.1 The charge-sheet approximation 41
2.4.4.2 The approximate linear relationship
between inversion charge density and
surface potential 43
xiii
XJ V MOSFET MODELING FOR CIRCUIT ANALYSIS AND DESIGN
by Galup-Montoro and Schneider
2.4.5 The pinch-off voltage 45
2.4.6 The unified charge control model (UCCM) 47
2.4.7 Comparison between charge-sheet model and UCCM 49
2.5. Real C-V curves: Interface traps, polysilicon depletion,
and quantum effects 51
2.5.1 Interface-trap capacitance 52
2.5.2 Polysilicon depletion 54
2.5.3 Quantum mechanical (QM) effects on
the semiconductor capacitance 57
Bibliography 61
Problems 64
Chapter 3 The Long-Channel MOSFET: Theory and dc
Equations 67
3.1 A brief history of MOSFET theory 67
3.2 MOSFET operation 71
3.3 The Pao-Sah exact I-V model 73
3.4 Compact surface potential MOSFET models 79
3.4.1 Linearized surface potential models 83
3.4.2 Brews-van de Wiele charge-sheet formula
for the current 84
3.5 Charge control compact model 85
3.6 Comparison between models 86
3.7 Design-oriented MOSFET model 88
3.7.1 Forward and reverse components of the drain current 88
3.7.2 Asymptotic behavior of the drain current in weak
and strong inversion 91
3.7.3 Universal dc characteristics 94
3.7.4 Small-signal transconductances 98
3.7.5 The transconductance-to-current ratio 101
3.7.6 Small-signal MOSFET model at low frequencies 103
Bibliography 105
Problems 107
Chapter 4 The Real MOS Transistor: dc Models 113
4.1 Effective mobility 113
4.2 Velocity saturation 119
4.3 Saturation charge and saturation voltage 122
4.4 Channel length modulation 127
MOSFET MODELING FOR CIRCUIT ANALYSIS AND DESIGN xv
Contents
4.5 Effect of source and drain resistances 129
4.6 Ballistic transport 129
4.7 Short and narrow channel effects 131
4.7.1 Short-channel effect 131
4.7.2 Reverse short-channel effect 134
4.7.3 Narrow-channel effect 135
4.7.4 Drain-induced barrier lowering 137
4.7.5 Temperature effect on the threshold voltage 139
4.8 Impact of small geometry effects on transistor model 140
4.9 Benchmark tests for dc MOSFET models for circuit
simulation 144
4.9.1 Series-parallel association of transistors 145
4.9.2 Gummel symmetry test 149
Bibliography 151
Problems 154
Chapter 5 Stored Charges and Capacitive Coefficients 157
5.1 Transient analysis of the MOS transistor 158
5.1.1 The continuity equation 158
5.1.2 Definitions of source and drain charges 159
5.2 Quasi-static charge-conserving model 163
5.2.1 Stored charges 163
5.2.1.1 Symbolic MOSFET model 164
5.2.1.2 Stored charge calculations 165
5.2.2 Transit time 170
5.2.3 Capacitive coefficients 171
5.2.3.1 Intrinsic small-signal models 173
5.2.3.2 Calculation of the capacitive coefficients 175
5.2.3.3 Charge conservation and transcapacitances 183
5.2.3.4 Intrinsic transition frequency 185
5.3 Charges and capacitances of the extrinsic transistor 188
5.4 Small-dimension effects on charges and capacitances 190
5.4.1 Effect of velocity saturation on stored charges 190
5.4.2 Effect of velocity saturation on capacitances 194
5.4.3 Other small-dimension effects on capacitances 199
Bibliography 200
Problems 201
X vi MOSFET MODELING FOR CIRCUIT ANAL YSIS AND DESIGN
by Galup-Montoro and Schneider
Chapter 6 Mismatch Modeling 203
6.1 Introduction 203
6.2 Random mismatch in MOS transistors 204
6.3 Consistent model for drain current fluctuation 206
6.4 Number fluctuation mismatch model 207
6.5 Specific current mismatch 212
6.6 Mismatch model in terms of inversion level 213
6.7 Experimental results and discussion 215
Bibliography 222
Problems 224
Chapter 7 Noise in MOSFETs 227
7.1 Sources of noise 227
7.1.1 Thermal noise 227
7.1.2 Shot noise 229
7.1.3 Flicker noise 231
7.2 Noise modeling using the impedance field method 232
7.2.1 Thermal noise in MOSFETs 236
7.2.2 Flicker noise in MOSFETs 236
7.2.2.1 Measurement results 240
7.3 Consistency of noise models 243
7.4 Design-oriented noise models 246
7.4.1 Relationship between thermal noise and
transconductance 246
7.4.2 Flicker noise in terms of inversion levels 247
7.4.3 The corner frequency 250
7.5 Small-dimension effects on MOSFET noise 251
7.5.1 Review of the effect of velocity saturation on
the drain current 251
7.5.2 The impedance field for short channel MOSFETs 253
7.5.3 Drain current noise of short channel MOSFETs 255
Bibliography 260
Problems 262
Chapter 8 High-Frequency Models 265
8.1 Introduction 265
8.2 Non quasi-static operation of the MOSFET 266
8.3 Non-quasi-static small-signal model 267
8.4 The y-parameter model 275
MOSFETMODELING FOR CIRCUIT ANALYSIS AND DESIGN xvii
Contents
8.5 Channel segmentation 280
8.6 Induced gate noise 281
Bibliography 290
Problems 292
Chapter 9 Gate and Bulk Currents 293
9.1 Gate tunneling current 293
9.1.1 Tunneling through a potential barrier 294
9.1.2 Compact model for tunneling in MOS structures 295
9.1.2.1 Impact frequency 297
9.1.2.2 Equations for the tunneling current 299
9.1.2.3 Comparison between models 301
9.1.2.4 Partition of the gate current into source
and drain components 303
9.2 Bulk current 306
9.2.1 Gate induced drain leakage 306
9.2.2 Impact ionization current 308
9.2.2.1 Weak avalanche 308
9.2.2.2 Breakdown 313
Bibliography 315
Problems 317
Chapter 10 Advanced MOSFET Structures 319
10.1 Introduction 319
10.2 Deep submicron planar MOS transistor structures 320
10.3 Silicon-on-insulator (SOI) CMOS transistors 324
10.3.1 Pinch-off voltage calculation 334
10.4 Undoped surrounding-gate transistors 338
10.5 Multiple-gate transistors 343
Bibliography 345
Problems 348
Chapter 11 MOSFET Parameter Extraction 349
11.1 Introduction 349
11.2 Threshold voltage and short-channel effects 350
11.3 Specific current and effective channel length and width 355
11.4 Slope factor and subthreshold slope 357
11.5 Mobility degradation with transversal field 359
XViii MOSFET MODELING FOR CIRCUIT ANALYSIS AND DESIGN
by Galup-Montoro and Schneider
Bibliography 363
Problems 364
Chapter 12 Advanced MOSFET Models for
Circuit Simulators 367
12.1 Surface potential-vs. inversion charge-based models 368
12.2 Charge-based models 369
12.2.1 The ACM model 370
12.2.2 The EKV model 373
12.2.3 The BSDVI5 model 375
12.3 Surface potential models 376
12.3.1 The HiSIM model 378
12.3.2 MOS model 11 380
12.3.3 The SP model 382
Bibliography 383
Problems 386
Appendix A Electrostatics in One Dimension 387
Appendix B Electrostatics in Semiconductors 391
Appendix C Drift-diffusion Current Model 393
Appendix D Continuity Equations 397
Appendix E Basics of pn Junctions 399
E.I Electrostatics in equilibrium 400
E.2 Electrostatics of forward- and reverse-biased
junction 401
E.3 Quasi-Fermi potentials in the pn-junction 402
Appendix F Hall-Shockley-Read (HSR) Statistics 405
Appendix G Interface Trap Capacitance 409
Index 415
|
| any_adam_object | 1 |
| author | Galup-Montoro, Carlos Schneider, Márcio Cherem |
| author_facet | Galup-Montoro, Carlos Schneider, Márcio Cherem |
| author_role | aut aut |
| author_sort | Galup-Montoro, Carlos |
| author_variant | c g m cgm m c s mc mcs |
| building | Verbundindex |
| bvnumber | BV024620650 |
| classification_rvk | ZN 4870 |
| ctrlnum | (OCoLC)255478234 (DE-599)GBV524430411 |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01526nam a2200373 c 4500</leader><controlfield tag="001">BV024620650</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20090910 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">090924s2007 ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812568107</subfield><subfield code="9">981-256810-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812568106</subfield><subfield code="9">978-981-256810-6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)255478234</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBV524430411</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-83</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4870</subfield><subfield code="0">(DE-625)157415:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Galup-Montoro, Carlos</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">MOSFET modeling for circuit analysis and design</subfield><subfield code="c">Carlos Galup-Montoro ; Márcio Cherem Schneider</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Hackensack, NY <<[u.a.]>></subfield><subfield code="b">World Scientific</subfield><subfield code="c">2007</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXIV, 418 S.</subfield><subfield code="b">Ill., zahlr. graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">International series on advances in solid state electronics and technology</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Schaltungsentwurf</subfield><subfield code="0">(DE-588)4179389-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Schaltungsentwurf</subfield><subfield code="0">(DE-588)4179389-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Schneider, Márcio Cherem</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">HBZ Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018592647&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-018592647</subfield></datafield></record></collection> |
| id | DE-604.BV024620650 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:03:12Z |
| institution | BVB |
| isbn | 9812568107 9789812568106 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-018592647 |
| oclc_num | 255478234 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | XXIV, 418 S. Ill., zahlr. graph. Darst. |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | World Scientific |
| record_format | marc |
| series2 | International series on advances in solid state electronics and technology |
| spelling | Galup-Montoro, Carlos Verfasser aut MOSFET modeling for circuit analysis and design Carlos Galup-Montoro ; Márcio Cherem Schneider Hackensack, NY <<[u.a.]>> World Scientific 2007 XXIV, 418 S. Ill., zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier International series on advances in solid state electronics and technology Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Schaltungsentwurf (DE-588)4179389-4 s DE-604 Schneider, Márcio Cherem Verfasser aut HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018592647&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Galup-Montoro, Carlos Schneider, Márcio Cherem MOSFET modeling for circuit analysis and design Schaltungsentwurf (DE-588)4179389-4 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4179389-4 (DE-588)4207266-9 |
| title | MOSFET modeling for circuit analysis and design |
| title_auth | MOSFET modeling for circuit analysis and design |
| title_exact_search | MOSFET modeling for circuit analysis and design |
| title_full | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro ; Márcio Cherem Schneider |
| title_fullStr | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro ; Márcio Cherem Schneider |
| title_full_unstemmed | MOSFET modeling for circuit analysis and design Carlos Galup-Montoro ; Márcio Cherem Schneider |
| title_short | MOSFET modeling for circuit analysis and design |
| title_sort | mosfet modeling for circuit analysis and design |
| topic | Schaltungsentwurf (DE-588)4179389-4 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | Schaltungsentwurf MOS-FET |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018592647&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT galupmontorocarlos mosfetmodelingforcircuitanalysisanddesign AT schneidermarciocherem mosfetmodelingforcircuitanalysisanddesign |