III-V nitrides: symposium held December 2 - 6, 1996, Boston, Massachusetts, USA
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| Format: | Book |
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Pittsburgh, Pa.
Materials Research Soc.
1997
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| Series: | Materials Research Society symposium proceedings
449 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XXV, 1251 S. Ill., graph. Darst. |
| ISBN: | 1558993533 |
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| 245 | 1 | 0 | |a III-V nitrides |b symposium held December 2 - 6, 1996, Boston, Massachusetts, USA |c ed.: F. A. Ponce ... |
| 264 | 1 | |a Pittsburgh, Pa. |b Materials Research Soc. |c 1997 | |
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| 490 | 1 | |a Materials Research Society symposium proceedings |v 449 | |
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| 700 | 1 | |a Ponce, Fernando A. |4 edt | |
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 449 M-V NITRIDES
SYMPOSIUM HELD DECEMBER 2-6,1996, BOSTON, MASSACHUSETTS, U.S.A. EDITORS:
F.A. PONCE XEROX PALO ALTO RESEARCH CENTER PALO ALTO, CALIFORNIA, U.S.A.
T.D. MOUSTAKAS BOSTON UNIVERSITY BOSTON, MASSACHUSETTS, U.S.A. I.
AKASAKI MEIJO UNIVERSITY NAGOYA, JAPAN B.A. MONEMAR LINKOEPING UNIVERSITY
LINKOEPING, SWEDEN MATERIALS RESEARCH SOCIETY PITTSBURGH, PENNSYLVANIA
CONTENTS PREFACE XXIII ACKNOWLEDGMENTS XXV MATERIALS RESEARCH SOCIETY
SYMPOSIUM PROCEEDINGS XXVI PARTI: CRYSTAL GROWTH - BULK AND MOCVD
*METALORGANIC VAPOR-PHASE-EPITAXIAL GROWTH OF GALNN/GAN HETEROSTRUCTURES
AND QUANTUM WELLS 3 F. SCHOLZ, V. HAERTE, F. STEUBER, A. SOHMER, H.
BOLAY, V. SYGANOW, A. DORNEN, J-S. IM, A. HANGLEITER, J-Y. DUBOZ, P.
OALTIER, E. ROSENCHER, O. AMBACHER, D. BRUNNER, AND H. LAKNER GROWTH CF
GAN BY SUBLIMATION TECHNIQUE AND HOMOEPITAXIAL GROWTH BY MOCVD 15 SHIRO
SAKAI, SATOSHI LIURAI, LIATSUSHI IIISHINO, LIOICHI WADA, HISAO SATO, AND
YOSHIKI RIAOI *MOVPE GROWTH AND OPTICAL CHARACTERIZATION OF GAPN
METASTABLE ALLOY SEMICONDUCTOR 23 LI. ONABE GAN CRYSTALS GROWN IN THE
INCREASED VOLUME HIGH- PRESSURE REACTORS 35 S. FOROWSKI, N. BOCKOWSKI,
B. LUCZNIK, M. WROBIEWSKI, S. LIRUKOWSKI, I. ORZEGORY, M. LESZCZYNSKI,
O. RIOWAK, LI. FAKUJA, AND J. BARANOWSKI GROWTH OF BULK AIN AND GAN
SINGLE CRYSTALS BY SUBLIMATION 41 C.M. BALKAS, Z. SITAR, T. ZHETEVA, L.
BERGMAN, L.K. SHMAGIN, J.F. MUTH, R. LIOLBAS, R. RIEMANICH, AND R.F.
DAVIS SYNTHESIS OF BULK, POLYCRYSTALLINE GALLIUM NITRIDE AT LOW
PRESSURES 47 ALBERTO ARGOITIA, JOHN * ANGUS, CLIFF C. HAYMAN, LONG WANG,
JEFFREY S. DYCK, AND KATHLEEN KASH NITROGEN PLASMA PRETREATMENT OF
SAPPHIRE SUBSTRATES FOR THE GAN BUFFER GROWTH BY REMOTE PLASMA ENHANCED
MOCVD 53 MIN HONG KIM, CHEOISOO SONE, JAE HYUNG YI, SOUN OK HEUR, AND
EUIJOON YOON EFFECT OF SAPPHIRE NITRIDATION ON GAN BY MOCVD 59 DONGJIN
BYUN, JAESIK JEONG, JAE-INN LEE, BYONGHO KIM, JI-BEOM YOO, AND DONG-WHA
*** EFFECT OF THE NITRIDATION OF THE SAPPHIRE (0001) SUBSTRATE ON THE
GAN GROWTH 67 M. QRANDJEAN, J. MASSIES, P. VENNEGUES, N. LAUGT, AND M.
LEROUX INVITED PAPER V INITIAL GROWTH STAGE OF AIGAN GROWN DIRECTLY ON
(0001) 6H-SIC BY MOVPE 73 K. HORINO, A. KURAMATA, AND T. TANAHASHI AL X
GAI_ X N-BASED MATERIALS AND HETEROSTRUCTURES 79 P. KUNG, A. SAXLER, D.
WALKER, X. ZHANG, R. LAVADO, U.S. KIM, AND M. RAZEGHI A MODEL FOR INDIUM
INCORPORATION IN THE GROWTH OF INGAN FILMS 85 E.L. PINER, F.D. MCINTOSH,
J.C. ROBERTS, K.S. BOUTROS, M.E. AUMER, V.A. JOSHKIN, *.*. EL-MASRY,
S.M. BEDAIR, AND S.X. LIU THE COMPOSITION PULLING EFFECT IN INGAN GROWTH
ON THE GAN AND AIGAN EPITAXIAL LAYERS GROWN BY MOVPE 89 YASUTOSHI
KAWAGUCHI, MASAYA SHIMIZU, KAZUMASA TLIRAMATSU, AND HOBUHIKO SAWAKI
LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR DEPOSITION OF GALLIUM
NITRIDE ON (0001) SAPPHIRE SUBSTRATES USING A REMOTE RF NITROGEN PLASMA
95 CHEOLSOO SONE, MIN HONG KIM, JAE HYUNG YI, SOUN OK HEUR, AND EUIJOON
YOON MOVPE GAN GAS-PHASE CHEMISTRY FOR REACTOR DESIGN AND OPTIMIZATION
101 S.A. SAFVI, J.M. REDWING, A. THON, J.S. FLYNN, M.A. TISCHLER, AND
*.*. KUECH SELECTIVE GROWTH OF GAN AND AL 0 2AO8N ON GAN/AIN/6H-SIC
(0001) MULTILAYER SUBSTRATES VIA ORGANOMETALLIC VAPOR-PHASE EPITAXY 107
O.TI. ***, M.D. BREMSER, B.L. WARD, R.J. NEMANICH, AND R.F. DAVIS A
MICROSTRUCTURAL ANALYSIS OF ORIENTATION VARIATION IN EPITAXIAL AIN ON
SI, ITS PROBABLE ORIGIN, AND EFFECT ON SUBSEQUENT GAN GROWTH 113 R.
BEYE, T. QEORGE, J. W. YANG, AND M.A. KHAN OBSERVATION OF NEAR BAND EDGE
TRANSITION IN ALUMINUM NITRIDE THIN FILM GROWN BY MOCVD 119 XIAO TANG,
FAZLA R.B. TIOSSAIN, KOBCHAT WONGCHOTIGUI, AND MICHAEL Q. SPENCER MOCVD
GROWTH OF GAN FILMS ON LATTICE-MATCHED OXIDE SUBSTRATES 123 O.M.
KRYLIOUK, T.W. DANN, T.J. ANDERSON, H.F. MARUSKA, L.D. ZHU, J.T. DALY,
M. LIN, P. MORRIS, H.T. CHAI, D.W. KISKER, J.II. LI, AND K.S. JONES
LLL-V NITRIDE GROWTH BY ATMOSPHERIC-PRESSURE MOVPE WITH A THREE-LAYERED
FLOW CHANNEL 129 KAZUO UCHIDA, LLIROKI TOKUNAGA, YOSHIAKI INAISHI,
LIAKAO AKUTSU, KOH MATSUMOTO, TSUYOSHI ITOH, TAKASHI EGAWA, TAKASHI
JIMBO, AND MASAYOSHI UMENO VI GAN QUANTUM DOTS IN AL X GAI. X N CONFINED
LAYER STRUCTURES 135 SATORU TANAKA, FLIDEKI HIRAYAMA, SOHACHI IWAI, AND
YOSHINOBU AOYAGI GROWTH OF AIBN SOLID SOLUTION BY OMVPE 141 M. SHIN, A.
Y. POLYAKOV, W. QIAN, M. SKOWRONSKI, D.W. OREVE, AND R.O. WILSON PART
II: MOLECULAR-BEAM-GROWTH TECHNIQUES *MBE GROWTH OF (IN)GAN FOR LED
APPLICATIONS 149 H. RIECHERT, R. AVERBECK, A. GRABER, M. SCHIENLE, U.
STRAUSS, AND TI. TEWS *ON SURFACE CRACKING OF AMMONIA FOR MBE GROWTH OF
GAN 161 M. KAMP, M. MAYER, A. PELZMANN, AND K.J. EBELING GROWTH OF
CUBIC GAN BY MBE AND ITS PROPERTIES 173 S. YOSHIDA, H. OKUMURA, G.
PEUILLET, P. HACKE, AND K. BALAKRISHNAN MBE GROWTH AND OPTICAL
CHARACTERIZATION OF INGAN/AIGAN MULTIQUANTUM WELLS 185 R. SINGH, W.D.
HERZOG, D. DOPPALAPUDI, M.S. UENLUE, B.B. GOLDBERG, AND T.D. MOUSTAKAS IN
SITU REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION STUDY OF STRUCTURE AND
MORPHOLOGY EVOLUTION OF AIN THIN FILMS DURING GROWTH 191 P. JIN, G. W.
AIMER, R. RIAIK, P. ZATYKO, AND U. RAO THE EFFECT OF HYDROGEN ON THE
MOLECULAR-BEAM-EPITAXY GROWTH OF GAN ON SAPPHIRE UNDER GA-RICH
CONDITIONS 197 S.L. BUCZKOWSKI, ZHONGHAI YU, M. RICHARDS-BABB, *.*.
GILES, L.T. ROMANO, AND *.*. MYERS A STUDY OF MIXED GROUP-V NITRIDES
GROWN BY GAS-SOURCE MOLECULAR BEAM EPITAXY USING A NITROGEN RADICAL BEAM
SOURCE 203 W.O. BI, C.W. TU, D. MATHES, AND R. HULL KINETICS OF NITROGEN
IN GAASN LAYERS DURING GAAS OVERGROWTH 209 Z.Z. BANDIC, R.J. HAUENSTEIN,
M.L. O STEEN, AND T.C. MCQILL REACTIVE MBE GROWTH OF GAN AND GAN:H ON
GAN/SIC SUBSTRATES 215 M.A.L. JOHNSON, ZHONGHAI YU, C . BONEY, W.C.
HUGHES, J.W. COOK, JR., J.F. SCHETZINA, H. ZHAO, B.J. SKROMME, AND J. A.
EDMOND INVITED PAPER VII PRESSURE-CONTROLLED GAN MBE GROWTH USING A
HOLLOW ANODE NITROGEN ION SOURCE 221 M.S.TI. LEUNG, R. KLOCKENBRINK, C.
KISIELOWSKI, FT. FUJII, J. KRUEGER, SUDHIR Q.S., A. ANDERS, Z.
LILIENTAL-WEBER, M. RUBIN, AND E.R. WEBER IMPACT OF GROWTH TEMPERATURE,
PRESSURE, AND STRAIN ON THE MORPHOLOGY OF GAN FILMS 227 TI. FUJII, C.
KISIELOWSKI, J. KRUEGER, M.S.TI. LEUNG, R. KLOCKENBRINK, M. RUBIN, AND
E.R. WEBER DOPING STUDIES OF N- AND P-TYPE AL X GAI. X N GROWN BY
ECR-ASSISTED MBE 233 D. KORAKAKIS, U.M. *1*, *. LUDWIG, AND T.D.
MOUSTAKAS MICROSTRUCTURES OF AIN BUFFER LAYERS FOR THE GROWTH OF GAN ON
(0001) AL 2 0 3 239 M. YEADON, W. KIM, A.E. BOTCHKAREV, S.N. MOHAMMAD,
TI. MORKOC, AND J.M. OIBSON GROWTH AND CHARACTERIZATION OF AIN ON 6H-SIC
SUBSTRATES 245 M. LEKOVA, G. W. AUNER, F. JIN, R. RIAIK, AND V. NAIK
EFFECT OF STOICHIOMETRY ON DEFECT DISTRIBUTION IN CUBIC GAN GROWN ON
GAAS BY PLASMA-ASSISTED MBE 251 S. RUVIMOV, Z. LILIENTAL-WEBER, J.
WASHBURN, T.J. DRUMMOND, M. TTAFISH, AND S.R. LEE SURFACE
RECONSTRUCTIONS AND LLL-V STOICHIOMETRY: THE CASE OF CUBIC AND HEXAGONAL
GAN 257 Q. FEUILIET, P. TIACKE, TI. OKUMURA, TI. TIAMAGUCHI, K. OHTA, K.
BALAKRISHNAN, AND S. YOSHIDA PART III: NOVEL MATERIALS AND GROWTH
TECHNIQUES LARGE-AREA GROWTH OF INGAN/AIGAN USING IN SITU MONITORING 265
E. WOELK, D. SCHMITZ, *. STRAUCH, *. WACHTENDORF, AND TI. JUERGENSEN MBE
GROWTH OF LLL-V NITRIDE FILMS AND QUANTUM-WELL STRUCTURES USING MULTIPLE
RF PLASMA SOURCES 271 M.A.L. JOHNSON, ZHONGHAI YU, * BONEY, W.U.
ROWLAND, JR., W.C. HUGHES, J.W. COOK, JR., J.F. SCHETZINA, *.*.
EL-MASRY, M.T. LEONARD, TL.S. KONG, AND J.A. EDMOND LARGE-AREA
SUPERSONIC JET EPITAXY OF AIN, GAN, AND SIC ON SILICON 277 L.J. LAUHON,
S.A. USTIN, AND W. TIO A STUDY OF THE SURFACE MORPHOLOGICAL FEATURES OF
THE POLAR FACES OF ZNO BY ATOMIC FORCE MICROSCOPY (AFM) METHODS AND AIN
THIN FILMS DEPOSITED ON ZNO POLAR FACES BY PLD 283 M.J. SUSCAVAGE, D.F.
RYDER, JR., AND P.W. YIP VIII EFFECT OF GROWTH PARAMETERS AND LOCAL
GAS-PHASE CONCENTRATIONS ON THE UNIFORMITY AND MATERIAL PROPERTIES OF
GAN/SAPPHIRE GROWN BY HYDRIDE VAPOR-PHASE EPITAXY 289 S.A. SAFVI, LI.R.
PERKINS, *.*. HORTON, AND T.F. KUECH MORPHOLOGY AND DIELECTRIC
PROPERTIES OF REACTIVELY- SPUTTERED ALUMINUM NITRIDE THIN FILMS 295 A.Q.
RANDOLPH AND S.K. KURINEC LOW-TEMPERATURE DEPOSITION AND
CHARACTERIZATION OF AL X LN 1 . X N THIN FILMS 301 QUOHUA QIU, J.O.
OLOWOLAFE, TAO PENG, K.M. UNRUH, **. SWANN, AND J. PIPREK LOW PRESSURE
CVD OF GAN FROM GACI 3 AND NH 3 307 M. TOPF, S. KOYNOV, S. FISCHER, I.
DIRNSTORFER, W. KRIEGSEIS, W. BURKHARDT, AND B-K. MEYER NEW PATHWAYS TO
HETEROEPITAXIAL GAN BY INORGANIC CVD SYNTHESIS AND CHARACTERIZATION OF
RELATED GA-C-N NOVEL SYSTEMS 313 J. KOUVETAKIS, M. O KEEFFE, LOUIS
BROUSEAU, J. MCMURRAN, DARRICK WILLIAMS, AND D.J. SMITH TOF-LEIS
CHARACTERIZATION AND GROWTH OF GAN THIN FILMS GROWN WITH ECR AND NH 3
319 E. KIM, A. BENSAOUIA, I. RUSAKOVA, A. SHULTZ, AND K. WATERS THE
GROWTH OF GAN FILMS BY MIGRATION-ENHANCED EPITAXY 325 S.E. HOOPER, CT.
FOXON, T.S. CHENG, N.J. JEFFS, Q.B. REN, D.E. LACKLISON, J. W. ORTON,
AND O. DUGGAN THIN FILM GROWTH OF GROUP III NITRIDES BY MASS-SEPARATED
ION BEAM DEPOSITION 331 * RONNING, E. DREHER, TL. FELDERMANN, M.
SEBASTIAN, J. ZWECK, R. FISCHER, AND TL. TLOFSAESS GROWTH OF (0001) ZNO
THIN FILMS ON SAPPHIRE 337 A. J. DREHMAN AND P. W. YIP GALLIUM NITRIDE
THICK LAYERS: EPITAXIAL GROWTH AND SEPARATION FROM SUBSTRATES 343 V.V.
BEL KOV, V.M. BOTNARYUK, L.M. FEDOROV, 1.1. DIAKONU, V.V. KRIVOLAPCHYUK,
M.P. SCHEGLOV, AND YU.V. ZHILYAEV SURFACE ENERGY CONSTRAINTS FOR
HETEROEPITAXIAL GROWTH ON COMPLIANT SUBSTRATES: MORPHOLOGY OF GAN GROWN
ON SC LAYERS 347 D.D. KOLESKE, A.E. WICKENDEN, J.A. FREITAS, JR., R.
KAPLAN, AND S.M. PROKES SELECTED ENERGY EPITAXY OF GALLIUM NITRIDE 355
R.K. CHILUKURI, SUIAN ZHANG, E. CHEN, R.F. DAVIS, AND H.H. LAMB IX
MATERIAL AND DEVICE CHARACTERISTICS OF MBE-GROWN GAN USING A NEW RF
PLASMA SOURCE 361 R. BERESFORD, K.S. STEVENS, Q. CUI, A. SCHWARTZMAN,
AND H. CHENG GROWTH OF HEXAGONAL GALLIUM NITRIDE FILMS ON THE (111)
SURFACES OF SILICON WITH ZINC OXIDE BUFFER LAYERS 367 Y. KIM, CG. KIM,
K-W. LEE, K-S. YU, J.T. PARK, AND Y. KIM ZNO BUFFER FORMED ON SI AND
SAPPHIRE SUBSTRATES FOR GAN MOVPE 373 T. SHIRASAWA, T. HONDA, F. KOYAMA,
AND K. IGA DEPOSITION OF AIN ON WS2 (0001) SUBSTRATE BY ATOMIC LAYER
GROWTH PROCESS 379 J-W. CHUNG AND F.S. OHUCHI MBE GROWTH AND
CHARACTERIZATION OF ZNS/GAN HETEROSTRUCTURES 385 E.C. PIQUETTE, Z.Z.
BANDIC, J.O. MCCALDIN, AND T.C. MCQILL PART IV: STRUCTURAL PROPERTIES
STRUCTURAL AND OPTICAL PROPERTIES OF HOMOEPITAXIAL GAN LAYERS 393 J.M.
BARANOWSKI, Z. LILIENTAI-WEBER, K. KORONA, *. PAKULA, R. STEPNIEWSKI, A.
WYSMOJEK, I. QRZEGORY, O. NOWAK, S. POROWSKI, B. MONEMAR, AND P. BERGMAN
NANOPIPES AND INVERSION DOMAINS IN HIGH-QUALITY GAN EPITAXIAL LAYERS 405
P.A. PONCE, W.T. YOUNG, D. CHERNS, J.W. STEEDS, AND S. MAKAMURA
DETERMINATION OF THE PERCENTAGE OF THE CUBIC AND HEXAGONAL PHASES IN GAN
WITH NEXAFS 411 M. KATSIKINI, E.C. PALOURA, T.D. MOUSTAKAS, E.
TLOLUB-KRAPPE, AND J, ANTONOPOULOS NANOTUBES IN GAN 417 Z.
LILIENTAL-WEBER, Y. CHEN, S. RUVIMOV, W. SWIDER, AND J. WASHBURN
INVERSION DOMAIN BOUNDARIES IN GAN GROWN ON SAPPHIRE 423 L.T. ROMANO
ANDJ.E. RIORTHRUP MECHANISMS OF STRAIN REDUCTION IN GAN AND AIGAN/GAN
EPITAXIAL LAYERS 429 O. QFROERER, T. SCHLIISENER, V. HAERLE, F. SCHOLZ,
AND A. HANGIEITER INVITED PAPER X STRUCTURAL AND OPTICAL
CHARACTERIZATION OF HIGH-QUALITY CUBIC GAN EPILAYERS GROWN ON GAAS AND
3C-SIC SUBSTRATES BY GAS-SOURCE MBE USING RHEED IN SITU MONITORING 435
*. OKUMURA, K. BALAKRISHNAN, Q. FEULLLET, K. OHTA, TI. HAMAGUCHI, S.
CHICHIBU, Y. ISHIDA, AND S. YOSHIDA STRUCTURAL ANALYSIS OF GAN AND
GAN/LNGAN/GAN DH STRUCTURES ON SAPPHIRE (0001) SUBSTRATE GROWN BY MOCVD
441 TIISAO SATO, YOSHLKI RIAOI, AND SHIRO SAKAL STM OBSERVATION OF
NITRIDED-GA ON SI 447 Y. RIAKADA, S. MIWA, AND H, OKUMURA COMPARISON OF
THE MICROSTRUCTURE OF AIN FILMS GROWN BY MOCVD AND BY PLD ON SAPPHIRE
SUBSTRATES 453 YUN-XIN LI, LOURDES SALAMANCA-RIBA, V. TALYANSKY, T.
VENKATESAN, C. WONGCHIGUL, P. ZHOU, X. TANG, AND M.Q. SPENCER N-K-EDGE
EXAFS STUDY OF EPITAXIAL GAN FILMS 459 M. KATSIKINI, B.C. PALOURA, M.
FIEBER-ERDMANN, T.D. MOUSTAKAS, TI. AMANO, AND I. AKASAKI STUDIES OF
GROUP-ILL-NITRIDE GROWTH ON SILICON 465 A.V. BLANT, T.S. CHENG, C.T.
FOXON, J.C. BUSSEY, S.V. RIOVIKOV, AND V.V. TRET YAKOV HEXAGONAL GROWTH
HILLOCKS IN GAN EPILAYERS 471 P.O. MIDDLETON, * TRAGER-COWAN, A.
MOHAMMED, K.P. O DONNELL, W. VAN DER STRICHT, I. MOERMAN, AND P.
DEMEESTER HIGH-RESOLUTION X-RAY DIFFRACTION OF GAN GROWN ON SAPPHIRE
SUBSTRATES 477 A. SAXLER, M.A. CAPANO, W.C. MITCHEL, P. KUNG, X. ZHANG,
D. WALKER, AND M. RAZEGHI HIGH-RESOLUTION X-RAY DIFFRACTION FROM
EPITAXIAL GALLIUM NITRIDE FILMS 483 T. LAFFORD, N. LOXLEY, AND B.K.
TANNER HIGH-RESOLUTION X-RAY DIFFRACTION ANALYSIS OF GAN-BASED
HETEROSTRUCTURES GROWN BY OMVPE 489 M.S. OOORSKY, A.Y. POLYAKOV, M.
SKOWRONSKI, M. SHIN, AND D.W. QREVE PARTV: ELECTRONIC PROPERTIES FREE
AND BOUND EXCITONS IN GAN EPITAXIAL FILMS 497 B-K. MEYER *INVITED PAPER
*CHARACTERIZATION OF OMVPE-GROWN AIGALNN HETEROSTRUCTURES 509 D.P. BOUR,
H.F. CHUNG, W. GOETZ, L. ROMANO, B.S. KRUSOR, D. HOFSTETTER, S. RUDAZ,
C.P. KUO, F.A. PONCE, N.M. JOHNSON, M.Q. CRAFORD, AND R.D. BRINGANS
SPATIAL DISTRIBUTION OF ELECTRON CONCENTRATION AND STRAIN IN BULK GAN
SINGLE CRYSTALS - RELATION TO GROWTH MECHANISM 519 PIOTR PERLIN, TADEUSZ
SUSKI, ALAIN POLIAN, JEAN CLAUDE CHERVIN, ELZBIETA LITWIN-STASZEWSKA,
IZABELLA QRZEGORY, SYLWESTER POROWSKI, AND J.W. ERICKSON THICKNESS
DEPENDENCE OF ELECTRONIC PROPERTIES OF GAN EPILAYERS 525 W. GOETZ, J.
WALKER, L.T. ROMANO, *.*. JOHNSON, AND R.J. MOLNAR PERSISTENT
PHOTOCONDUCTIVITY IN N-TYPE GAN 531 A.E. WICKENDEN, G. BEADIE, D.D.
KOIESKE, W.S. RABINOVICH, AND J.A. FREITAS, JR. PERSISTENT
PHOTOCONDUCTIVITY IN P-TYPE GAN EPILAYERS AND N-TYPE AIGAN/GAN
HETEROSTRUCTURES 537 J.Z. LI, J.Y. LIN, TL.X. JIANG, M.A. KHAN, Q. CHEN,
A. SALVADOR, A. BOTCHKAREV, AND H. MORKOC MAGNETIC RESONANCE STUDIES OF
HIGH-RESISTIVITY GAN FILMS GROWN ON AI2O3 543 E.R. QLASER, T.A. KENNEDY,
A.E. WICKENDEN, D.D. KOIESKE, AND J.A. FREITAS, JR. OBSERVATION OF
MIDGAP STATES IN GAN WITH OPTICAL-ISOTHERMAL CAPACITANCE TRANSIENT
SPECTROSCOPY 549 P. HACKE, H. MIYOSHI, *. TLIRAMATSU, H. OKUMURA, S.
YOSHIDA, AND H. OKUSHI STRUCTURAL CHARACTERISTICS OF MOCVD-GROWN AIN
FILMS WITH DIFFERENT CARBON CONCENTRATION 555 YUN-XIN LI, LOURDES
SALAMANCA-RIBA, M.G. SPENCER, K. WONGCHIGUL, P. ZHOU, X. TANG, V.
TALYANSKY, AND T. VENKATESAN DEEP LEVELS IN GAN STUDIED BY EXTRINSIC
PHOTOCONDUCTIVITY MEASUREMENT 561 RONG ZHANG, ZHENCHUN HUANG, BO GUO,
J.C. CHEN, LI YAN, YOUDOU ZHENG, AND T.F. KUECH ELECTRON-PHONON
SCATTERING IN SI-DOPED GAN 567 C. WETZEL, W. WALUKIEWICZ, AND J. W.
AGER, III INTRINSIC MOBILITY LIMITS OF A TWO-DIMENSIONAL ELECTRON GAS IN
AIGAN/GAN HETEROSTRUCTURES 573 W. WALUKIEWICZ, L. HSU, AND J.M. REDWING
INVITED PAPER XII SPIN RESONANCE INVESTIGATIONS OF GAN AND AIGAN 579
N.M. REINACHER, H. ANGERER, O. AMBACHER, M.S. BRANDT, AND M. STUTZMANN
EFFECTS OF X-RAY AND Y-RAY IRRADIATION ON GAN 585 C.TI. QIU, M. W.
LEKSONO, J.I. PANKOVE, * ROSSINGTON, AND B.E. HALLER STUDIES OF
ELECTRICALLY AND RECOMBINATION ACTIVE CENTERS IN UNDOPED GAN GROWN BY
OMVPE 591 A.Y. POLYAKOV, A.V. QOVORKOV, N.B. SMIRNOV, M. SHIN, M.
SKOWRONSKI, AND D. W. OREVE PHOTOCONDUCTING PROPERTIES OF ULTRAVIOLET
DETECTORS BASED ON GAN AND ALI- X GA X N FILMS GROWN BY ECR-MBE 597 M.
MISRA, D. KORAKAKIS, R. SINGH, A. SAMPATH, AND T.D. MOUSTAKAS ELECTRICAL
CHARACTERIZATION OF AI-AIN(PSMBE GROWN)-SI MIS STRUCTURES 603 REGINA Y.
KRUPITSKAYA, GREGORY W. AUNER, AND TOM E. DALEY ANALYTICAL THEORY OF
ELECTRON MOBILITY AND DRIFT VELOCITY IN GAN 609 B.L. QELMONT, M.S. SHUR,
AND M. STROSCIO P-TYPE CONDUCTIVITY WITH A HIGH HOLE MOBILITY IN CUBIC
GAN/GAAS EPILAYERS 615 D.J. AS, A. RUETHER, M. LUBBERS, J. MIMKES, K.
LISCHKA, AND D. SCHIKORA MULTIPHOTON EXCITATION STUDIES ON GAN WITH PS
PULSES 621 LH. LIBON, * VOELKMANN, D. KIM, V. PETROVA-KOCH, AND Y.R.
SHEN OBSERVATION OF A TWO-DIMENSIONAL ELECTRON GAS IN THE AIGAN/GAN ON
SIC SUBSTRATES 627 O.C. CHI, C.F. LIN, H.C. CHENG, J.A. HUANG, M.S.
FENG, AND J.D. QUO STUDY OF TRAPS IN GAN BY THERMALLY-STIMULATED CURRENT
633 RONG ZHANG, ZHENCHUN HUANG, J.C. CHEN, YOUDOU ZHENG, AND T.F. KUECH
PART VI: LUMINESCENCE AND RECOMBINATION SPONTANEOUS AND STIMULATED
RECOMBINATION IN THE NITRIDES 641 A. TLANGLEITER, F. SCHOLZ, V. HAERLE,
J-S. IM, AND Q. FRANKOWSKY RECOMBINATION OF LOCALIZED EXCITONS IN INGAN
SINGLE- AND MULTIQUANTUM-WELL STRUCTURES 653 S. CHICHIBU, T. AZUHATA, T.
SOTA, AND S. TIAKAMURA INVITED PAPER XIII GAIN SPECTRA AND STIMULATED
EMISSION IN EPITAXIAL (IN.AI) GAN THIN FILMS 659 D. WIESMANN, I. BRENER,
L.N. PFEIFFER, M.A. KHAN, C.J. SUN, C.S. CHANG, W. FANG, AND S.L. CHUANG
EMISSION MECHANISM OF THE INGAN MQW GROWN BY MOCVD 665 YUKIO NARUKAWA,
YOICHI KAWAKAMI, SHIZUO FUJITA, SHIGEO FUJITA, AND SHUJI NAKAMURA DEFECT
TRANSITIONS IN GAN BETWEEN 3.0 AND 3.4 EV 671 W. RIEGER, O. AMBACHER, E.
ROHRER, TI. ANGERER, AND M. STUTZMANN DEPTH PROFILE OF THE EXCITONIC
LUMINESCENCE IN GALLIUM-NITRIDE LAYERS 677 H. SIEGLE, A. HOFFMANN, L.
ECKEY, C. THOMSEN, T. DETCHPROHM, K. TIIRAMATSU, T. DAVIS, ANDJ.W.
STEEDS DISLOCATION LUMINESCENCE IN WURTZITE GAN 683 Y.Q. SHRETER, Y.T.
REBANE, T.J. DAVIS, J. BARNARD, M. DARBYSHIRE, J.W. STEEDS, W.O. PERRY,
M.D. BREMSER, AND R.F. DAVIS COEXISTENCE OF SHALLOW AND LOCALIZED DONOR
CENTERS IN BULK GAN CRYSTALS STUDIED BY HIGH-PRESSURE RAMAN SPECTROSCOPY
689 P. PERLIN, T. SUSKI, A. POLIAN, J.* CHERVIN, W. KNAP, J. CAMASSEL,
I. ORZEGORY, S. POROWSKI, AND J. W. ERICKSON CHARACTERIZATION OF
NEAR-EDGE-OPTICAL TRANSITIONS IN UNDOPED AND DOPED GAN/SAPPHIRE GROWN BY
MOVPE, HVPE, AND GSMBE 695 M. LEROUX, B. BEAUMONT, N. QRANDJEAN, J.
MASSIES, AND P. OIBART PHOTOLUMINESCENCE EXCITATION STUDIES OF THE
OPTICAL TRANSITIONS IN GAN 701 D. KOVALEV, B. AVERBOUKH, B-K. MEYER, D.
VOLM, TI. AMANO, AND I. AKASAKI PHOTOLUMINESCENCE OF FE COMPLEXES IN GAN
707 P. THURIAN, A. HOFFMANN, L. ECKEY, P. MAXIM, R. HEITZ, I. BROSER, K.
PRESSEL, B-K. MEYER, J. SCHNEIDER, J. BAUR, AND M. KUNZER
PHOTOLUMINESCENCE, REFLECTANCE, AND MAGNETOSPECTROSCOPY OF SHALLOW
EXCITONS IN GAN 713 B.J. SKROMME, H. ZHAO, B. QOIDENBERG, H.S. KONG,
M.T. LEONARD, O.E. BULMAN, CR. ABERNATHY, AND S.J. PEARTON
CHARACTERIZATION OF GAN FILMS ON SAPPHIRE BY CATHODOLUMINESCENCE 719
L-L. CHAO, O.S. CARGILL, III, AND * KOTHANDARAMAN RAMAN ANALYSIS OF
ELECTRON-PHONON INTERACTIONS IN GAN FILMS 725 L. BERGMAN, M.D. BREMSER,
J.A. CHRISTMAN, S.W. KING, R.F. DAVIS, AND R.J. NEMANICH XIV DIRECT
IMAGING OF IMPURITY-INDUCED RAMAN SCATTERING IN GAN 731 F.A. PONCE, J.W.
STEEDS, CD. DYER, AND O.D. PITT SUBPICOSECOND TIME-RESOLVED RAMAN
STUDIES OF NONEQUILIBRIUM EXCITATIONS IN WURTZITE GAN 737 K.T. TSEN,
R.P. JOSHL, D.K. FERRY, A. BOTCHKAREV, B. SVERDLOV, A. SALVADOR, AND TL.
MORKOC PART VII: OPTICAL PROPERTIES EFFECTS OF STRAIN FIELDS ON
EXCITONS AND PHONONS IN WURTZITE GAN EPILAYERS 745 B. OIL, O. BRIOT,
R.L. AULOMBARD, J.F. DEMANGEOT, J. FRANDON, AND M. RENUCCI MAGNETIC
RESONANCE STUDIES OF GAN-BASED SINGLE- QUANTUM WELL LEDS 757 W.E.
CARLOS, E.R. GLASER, T.A. KENNEDY, AND SHUJI NAKAMURA STRUCTURAL AND
OPTICAL PROPERTIES OF AIGAN/GAN QUANTUM-WELL STRUCTURES GROWN BY MOCVD
ON SAPPHIRE 769 R. TIIEBUHR, K.H. BACHERN, D. BEHR, * HOFFMANN, U.
KAUFMANN, Y. LU, B. SANTIC, J. WAGNER, M. ARTERY, J.L. ROUVIERE, AND TL.
JURGENSEN INTRINSIC AND THERMAL STRESS IN GALLIUM NITRIDE EPITAXIAL
FILMS 775 J.W. AGER, III, T. SUSKI, S. RUVIMOV, J. KRUEGER, *. CONTI,
E.R. WEBER, M.D. BREMSER, R. DAVIS, AND C.P. KUO VARIATION OF GAN
VALENCE BANDS WITH BIAXIAL STRESS: QUANTIFICATION OF RESIDUAL STRESS AND
IMPACT ON FUNDAMENTAL BAND PARAMETERS 781 N.V. EDWARDS, S.D. YOO, M.D.
BREMSER, *.*. HORTON, N.R. PERKINS, T.W. WEEKS, JR., TL. LIU, R.A.
STALL, *.*. KUECH, R.F. DAVIS, AND D.E. ASPNES BULK AND SURFACE
ELECTRONIC STRUCTURE OF GAN MEASURED USING ANGLE-RESOLVED PHOTOEMISSION,
SOFT X-RAY EMISSION AND SOFT X-RAY ABSORPTION 787 KEVIN E. SMITH,
SARNJEET S. DHESI, LAURENT-C. DUDA, CRISTIAN B. STAGARESCU, J.TI. QUO,
JOSEPH TIORDGREN, RAJ SINGH, AND THEODORE D. MOUSTAKAS YELLOW
LUMINESCENCE AND ASSOCIATED ODMR IN MOVPE GAN: A COMPARISON OF DEFECT
MODELS 793 P. W. MASON, A. DORNEN, V. HAERTE, F. SCHOLZ, AND O.D. WATKINS
OPTICAL QUENCHING OF PHOTOCONDUCTIVITY IN GAN PHOTOCONDUCTORS 799 Z.C.
HUANG, D.B. MOTT, P.K. SHU, R. ZHANG, J.C. CHEN, AND D.K. WICKENDEN
INVITED PAPER XV OPTICAL DIELECTRIC RESPONSE OF GALLIUM NITRIDE STUDIED
BY VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY 805 H. YAO, C.H. YAN, H.A.
JENKINSON, J.M. ZAVADA, J.S. SPECK, AND S.P. DENBAARS CHANGES IN OPTICAL
TRANSMITTANCE OF ALUMINUM NITRIDE THIN FILMS EXPOSED TO AIR 811
YOSHIFUMI SAKURAGI, YOSHIHISA WATANABE, YOSHIKAZU TIAKAMURA, AND YOSHIKI
AMAMOTO AN OPTICAL WAVEGUIDE FORMED BY ALUMINUM NITRIDE THIN FILM ON
SAPPHIRE 817 XIAO TANG, YIFANG YUAN, K. WONGCHOTIGUL, AND MICHAEL O.
SPENCER OPTICAL STUDIES OF MOCVD LN X GAI- X N ALLOYS 823 B.D. LITTLE,
W. SHAN, J.J. SONG, Z.C. FENG, M. SCHURMAN, AND R.A. STALL OPTICAL
TRANSITIONS AND RECOMBINATION LIFETIMES IN GAN AND INGAN EPILAYERS, AND
INGAN/GAN AND GAN/AIGAN MULTIPLE QUANTUM WELLS 829 M. SMITH, J. Y. LIN,
TL.X. JIANG, A. KHAN, Q. CHEN, A. SALVADOR, A. BOTCHKAREV, AND H. MORKOC
IN-PLANE OPTICAL ANISOTROPIES OF AL X GAI. X N FILMS IN THEIR REGIONS OF
TRANSPARENCY 835 V. ROSSOW, RI.V. EDWARDS, M.D. BREMSER, R.S. KERN, FT.
LIU, R.F. DAVIS, AND D.E. ASPNES STRAIN EFFECTS ON EXCITONIC TRANSITIONS
IN GAN 841 W. SHAN, R.J. TIAUENSTEIN, A.J. FISCHER, J.J. SONG, W.O.
PERRY, M.D. BREMSER, R.F. DAVIS, AND B. QOLDENBERG BOUND EXCITON
ENERGIES, BIAXIAL STRAINS, AND DEFECT MICROSTRUCTURES IN
GAN/AIN/6H-SIC(0001) HETEROSTRUCTURES 847 W.O. PERRY, T. ZHELEVA, K.J.
LINTHICUM, M.D. BREMSER, R.F. DAVIS, W. SHAN, AND J.J. SONG
INVESTIGATION OF VACANCIES IN GAN BY POSITRON ANNIHILATION 853 L.V.
JDRGENSEN, A.C. KRUSEMAN, TI. SCHUT, A. VAN VEEN, M. FANCIULLI, AND T.D.
MOUSTAKAS PART VIII: POINT DEFECTS THEORY OF POINT DEFECTS AND
INTERFACES 861 CHRIS O. VAN DE WALLE AND JOERG ********** INCOMPLETE
SOLUBILITY IN NITRIDE ALLOYS 871 IM. MO AND O.B. STRINGFELLOW INVITED
PAPER XVI X-RAY ABSORPTION AND REFLECTION AS PROBES OF THE GAN
CONDUCTION BANDS: THEORY AND EXPERIMENT OF THE N-K-EDGE AND GA * 2 ,*
EDGES 881 W.R.L. LAMBRECHT, S.RI. RASHKEEV, B. SEGALL, K.
LAWNLCZAK-JABLONSKA, T. SUSKI, E.M. OULLIKSON, J.H. UNDERWOOD, R.C.C.
PERERA, AND J.* RIFE ELECTRONIC STRUCTURE OF BIAXIALLY-STRAINED WURTZITE
CRYSTALS GAN AND AIN 887 J.A. MAJEWSKI, M. STAEDELE, AND P. VOGI THEORY
OF INTERFACES IN WIDE-GAP NITRIDES 893 M. BUONGIORNO NARDELLI, K.
RAPCEWICZ, E.L. BRIGGS, *. BUNGARO, AND J. BERNHOLC ENERGETICS OF AIN
EPITAXIAL WETTING LAYERS ON SIC (0001) 899 R. DI FELICE, J.E. NORTHRUP,
AND J. TIEUGEBAUER BAND STRUCTURE AND CATION ORDERING IN LIGA0 2 905
SUKIT LIMPIJUMNONG, WALTER R.L. LAMBRECHT, BENJAMIN SEGALL, AND KWISEON
KIM OPTICAL SIGNATURE OF THE GAN (LOTO) SURFACE 911 C. NOGUEZ, R.
ESQUIVEL-SIRVENT, D.R. ALFONSO, S.E. ULIOA, AND D.A. DRABOLD STABILITY
AND BAND OFFSETS OF SIC/GAN, SIC/AIN, AND AIN/GAN HETEROSTRUCTURES 917
J.A. MAJEWSKI, M. STAEDELE, AND P. VOGI OFFSETS AND POLARIZATION AT
STRAINED AIN/GAN POLAR INTERFACES 923 FABIO BERNARDINI, VINCENZO
FIORENTINI, AND DAVID VANDERBILT THEORETICAL STUDY OF GROUP-LLL-NITRIDE
ALLOYS 929 KWISEON KIM, SUKIT LIMPIJUMNONG, WALTER R.L. LAMBRECHT, AND
B. SEGALL SHALLOW IMPURITY STATES IN WURTZITE AND ZINC BLENDE STRUCTURE
GAN 935 R. WANG, P.P. RUDEN, J. KOLNIK, I. OGUZMAN, AND K.F. BRENNAN
STRUCTURE, ELECTRONIC PROPERTIES, AND DEFECTS OF GAN USING A
SELF-CONSISTENT MOLECULAR-DYNAMICS METHOD 941 PETRA STUMM AND D.A.
DRABOLD A FIRST MODEL OF AMORPHOUS GAN FROM AB INITIO MOLECULAR DYNAMICS
947 D.A. DRABOLD AND PETRA STUMM RELAXATIONS AT GAN (LOTO) AND (110)
SURFACES 953 ALESSIO FILIPETTI, MANUELA MENCHI, ANDREA BOSIN, AND
OIANCARLO CAPPELLINI XVII FIRST MICROSCOPIC OBSERVATION OF
CADMIUM-HYDROGEN PAIRS IN GAN 961 A. BURCHARD, M. DEICHER, D.
FORKEL-WIRTH, E.E. TIALLER, R. MAGERTE, A. PROSPERO, R. STOETZLER, AND
THE ISOLDE-COLLABORATION PART IX: ETCHING. HYDROGENATION AND OTHER
MATERIAL PROCESSES CHLORINE-BASED PLASMA ETCHING OF GAN 969 R.J. SHUL,
KD. BRIGGS, S.J. PEARTON, C.B. VARTULI, C.R. ABERNATHY, J. W. LEE, *
CONSTANTINE, AND * BARRATT ION IMPLANTATION AND ANNEALING STUDIES IN
LLL-V NITRIDES 981 J.C. ZOLPER, S.J. PEARTON, J.S. WILLIAMS, H.H. TAN,
R.J. KARLICEK, JR., AND R.A. STALL REACTIVATION OF ACCEPTORS AND
TRAPPING OF HYDROGEN IN GAN/LNGAN DOUBLE HETEROSTRUCTURES 993 S.J.
PEARTON, S. BENDI, K.S. JONES, V. KRISHNAMOORTHY, R.O. WILSON, F. REN,
R.F. KARLICEK, JR., AND R.A. STALL THE INFLUENCE OF HYDROGEN ADDITION ON
THE CHEMICAL PROPERTIES OF HYDROGENATED ALUMINUM NITRIDE FILMS PREPARED
BY RF REACTIVE SPUTTERING 999 JAI-YOUNG LEE AND YOON-JOONG YONG
MONITORING OF INDIUM X-RAY PEAK TO OPTIMIZE LN X GAI. X N LAYER GROWN BY
METALORGANIC CHEMICAL VAPOR DEPOSITION 1005 HONGQIANG LU, MALATHI
THOTHATHIRI, ZIMING WU, AND ISHWARA BHAT PULSED EXCIMER LASER PROCESSING
OF AIN/GAN THIN FILMS 1011 W.S. WONG, L.F. SCHLOSS, SUDHIR O.S., B.P.
UNDER, K-M. YU, E.R. WEBER, T. SANDS, AND *. W. CHEUNG CHEMICAL ETCHING
OF AIN AND INAIN IN KOH SOLUTIONS 1017 C.B. VARTULI, J.W. LEE, J.D.
MACKENZIE, S.J. PEARTON, C.R. ABERNATHY, J.C. ZOLPER, R.J. SHUL, AND F.
REN COMPARISON OF ICI AND IBR FOR DRY ETCHING OF ILL-NITRIDES 1023 C.B.
VARTULI, J.W. LEE, J.D. MACKENZIE, S.J. PEARTON, C.R. ABERNATHY, AND
R.J. SHUL REACTIVE ION-BEAM ETCHING OF GAN GROWN BY MOVPE 1029 K.
SAOTOME, A. NATSUTANI, T. SHIRASAWA, M. MORI, T HONDA, T. SAKAGUCHI, F.
KOYAMA, AND K. IGA PHOTO-ASSISTED ANODIC ETCHING OF GALLIUM NITRIDE
GROWN BY MOCVD 1035 HONGQIANG LU, ZIMING WU, AND ISHWARA BHAT INVITED
PAPER XVIII PATTERNING OF LIGA0 2 AND LIAI0 2 BY WET AND DRY ETCHING
1041 J.W. LEE, S.J. PEARTON, CR. ABERNATHY, R.Q. WILSON, B.L. CHAI, F.
REN, AND J.M. ZAVADA PARTX: METAL CONTACTS AND SURFACES THERMAL
STABILITY OF PT, PD, AND NI ON GAN 1049 K.J. DUXSTAD, E.E. TLALLER, K-M.
YU, M.T. HIRSCH, W.R. IMIER, D.A. STEIGERWALD, F.A. PONCE, AND L.T.
ROMANO OHMIC CONTACT TO N-GAN WITH TIN DIFFUSION BARRIER 1055 E.
KAMIHSKA, A. PIOTROWSKA, M. QUZIEWICZ, S. KASJANIUK, A. BARCZ, E.
DYNOWSKA, M.D. BREMSER, O.H. ***, AND R.F. DAVIS CR/NI/AU OHMIC CONTACTS
TO THE MODERATELY-DOPED P- AND N-GAN 1061 TAEK KIM, MYUNG * YOO, AND
TAEII KIM INN-BASED OHMIC CONTACTS TO AHNN 1067 S.M. DONOVAN, F. REN,
J.D. MACKENZIE, C.R. ABERNATHY, S.J. PEARTON, AND K. JONES
CHARACTERIZATION OF METAL/AL X LNI_ X N INTERFACE THERMAL STABILITY AND
ELECTRICAL PROPERTIES 1073 OUOHUA QIU, FEN CHEN, J.O. OIOWOLAFE, C.P.
SWANN, K.M. UNRUH, AND D.S. HOLMES ON THE EPITAXY OF METAL FILMS ON GAN
1079 Q.Z. LIU, K.V. SMITH, E.T. YU, S.S. LAU, N.R. PERKINS, AND T.F.
KUECH INFLUENCE OF SURFACE DEFECTS ON THE CHARACTERISTICS OF GAN
SCHOTTKY DIODES 1085 J-Y. DUBOZ, F. BINET, N. LAURENT, E. ROSENCHER, F.
SCHOLZ, V. HAERLE, *. BRIOT, *. QU, AND R.L. AULOMBARD COMPARISON OF
NI/AU, PD/AU, AND CR/AEU METALLIZATIONS FOR OHMIC CONTACTS TO P-GAN 1091
J.T. TREXLER, S.J. PEARTON, P.H. HOLLOWAY, M.Q. FLIER, K.R. EVANS, AND
R.F. KARLICEK, JR. INVESTIGATION OF ALUMINUM AND TITANIUM/ALUMINUM
CONTACTS TO N-TYPE GALLIUM NITRIDE 1097 B.P. LUTHER, S.E. MOHNEY, *.*.
JACKSON, M. ASIFKHAN, Q. CHEN, AND J.W. YANG PTLN 2 OHMIC CONTACTS TO
N-GAN 1103 D.B. INGERLY, Y.A. CHANG, H.R. PERKINS, AND T.F. KUECH WIDE
BANDGAP SEMICONDUCTORS FOR COLD CATHODES: A THEORETICAL ANALYSIS 1109
PETER LERNER, P.H. CUTLER, AND RI.M. MISKOVSKY XIX EVOLUTION OF TI
SCHOTTKY BARRIER HEIGHTS ON N-TYPE GAN WITH ANNEALING 1115 MICHELE T.
HIRSCH, KRISTIN J. DUXSTAD, AND E.E. TTALLER NITRIDE-BASED THIN-FILM
COLD CATHODE EMITTERS 1121 JAMES A. CHRISTMAN, ANDREW T. SOWERS, MICHAEL
D. BREMSER, BRANDON L. WARD, ROBERT F. DAVIS, AND ROBERT J. NEMANICH
ELECTRON EMISSION FROM COLD CATHODES 1127 R. W. PRYOR, LIHUA LI, AND
H.H. BUSTA PART XI: DEVICES CHARACTERISTICS OF INGAN
MULTIQUANTUM-WELL-STRUCTURE LASER DIODES 1135 SHUJI NAKAMURA STRUCTURAL
AND OPTICAL PROPERTIES OF NITRIDE-BASED HETEROSTRUCTURE AND QUANTUM-WELL
STRUCTURE 1143 H. AMANO, T. TAKEUCHI, S. SOTA, H. SAKAI, AND I. AKASAKI
DESIGN CONSIDERATION OF GAN-BASED SURFACE EMITTING LASERS 1151 T.
HONDA, F. KOYAMA, AND * IGA STACKED INGAN/AIGAN DOUBLE HETEROSTRUCTURES
1161 J.C. ROBERTS, F.Q. MCINTOSH, M.E. AUMER, E.L. FINER, V.A. JOSHKIN,
S. LIU, LI.A. EI-MASRY, AND S.M. BEDAIR TUNNEL EFFECTS IN LUMINESCENCE
SPECTRA OF INGAN/AIGAN/GAN LIGHT-EMITTING DIODES 1167 A.E. YUNOVICH,
A.H. KOVAIEV, V.E. KUDRYASHOV, F.I. MANYACHIN, A.II. TUERKIN, AND K.Q.
ZOLLNA OPTICAL AND ELECTRICAL CHARACTERISTICS OF SINGLE-QUANTUM-WELL
INGAN LIGHT-EMITTING DIODES 1173 FIOTR PERLIN, MAREK OSIRISKI, AND FETR
Q. EIISEEV DEGRADATION OF SINGLE-QUANTUM-WELL INGAN GREEN LIGHT EMITTING
DIODES UNDER HIGH ELECTRICAL STRESS 1179 MAREK OSINSKI, FIOTR PERLIN,
FETR O. EIISEEV, QUNGTAN LIU, AND DANIEL L. BARTON CARRIER RECOMBINATION
DYNAMICS OF INGAN/GAN LEDS AND ITS APPLICATIONS TO THE OPTIMIZATION OF
UV GENERATION EFFICIENCY 1185 J.P. BASRUR, F.S. CHOA, P-L. LIU, J.
SIPIOR, O. RAO, Q.M. CARTER, AND Y.J. CHEN INVITED PAPER XX DEGRADATION
OF INGAN/AIGAN LED ON SAPPHIRE SUBSTRATE GROWN BY MOCVD 1191 *. EGAWA,
H. ISHLKAWA, T. JIMBO, AND M. UMENO REALIZATION AND CHARACTERIZATION OF
OPTICALLY-PUMPED GALNN-DFB LASERS 1197 R. HOFMANN, V. WAGNER, FL-P.
QAUGGEL, F. ADLER, P. ERNST, A. SOHMER, H. BOLAY, F. SCHOLZ, AND H.
SCHWEIZER STIMULATED EMISSION FROM SINGLE- AND MULTIPLE-QUANTUM-WELL
GAN-AIGAN SEPARATE-CONFINEMENT HETEROSTRUCTURES 1203 D.A.S. LOEBER, *.*.
ANDERSON, J.M. REDWING, J.S. FLYNN, Q.M. SMITH, AND M.A. TISCHLER
STIMULATED EMISSION AND GAIN MEASUREMENTS FROM INGAN/GAN
HETEROSTRUCTURES 1209 I.K. SHMAGLN, J.F. MUTH, S. KRISHNANKUTTY, R.M.
FIOLBAS, S. KELLER, U.K. MISHRA, AND S.F. DENBAARS HIGH-QUALITY
PHOTOCONDUCTIVE ULTRAVIOLET GAN/6H-SIC DETECTOR AND ITS PROPERTIES 1215
K. YANG, R. ZHANG, L. ZANG, B. SHEN, Z.Z. CHEN, Y.D. ZHENG, X.M. BAO,
Z.C. HUANG, AND J.* CHEN GAN-BASED MSM UV PHOTODETECTORS 1221 S. LIANG,
W. CAI, Y. LI, Y. LIU, Y. LU, CA. TRAN, R.F. KARLICEK, JR., AND I.
FERGUSON VISIBLE BLIND UV GAN PHOTOVOLTAIC DETECTOR ARRAYS GROWN BY RF
ATOMIC NITROGEN PLASMA MBE 1227 J.M. VAN HOVE, F.F. CHOW, R. HICKMAN,
A.M. WOWCHAK, J.J. KLAASSEN, AND C.J. FOILEY STUDY OF I BAD-DEPOSITED
AIN FILMS FOR VACUUM DIODE ELECTRON EMISSION 1233 E. W. FORSYTHE, J.A.
SPRAGUE, B.A. KHAN, S. METHA, D.A. SMITH, I.H. MURZIN, B. AHEM, D.W.
WEYBURNE, AND Q.S. TOMPA AUTHOR INDEX 1239 SUBJECT INDEX 1247 XXI
|
| any_adam_object | 1 |
| author2 | Ponce, Fernando A. |
| author2_role | edt |
| author2_variant | f a p fa fap |
| author_facet | Ponce, Fernando A. |
| building | Verbundindex |
| bvnumber | BV024420484 |
| classification_rvk | UD 8400 |
| ctrlnum | (OCoLC)246781165 (DE-599)BVBBV024420484 |
| discipline | Physik |
| format | Book |
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| genre | (DE-588)1071861417 Konferenzschrift gnd-content |
| genre_facet | Konferenzschrift |
| id | DE-604.BV024420484 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:59:14Z |
| institution | BVB |
| isbn | 1558993533 |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-018398057 |
| oclc_num | 246781165 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | XXV, 1251 S. Ill., graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society symposium proceedings |
| series2 | Materials Research Society symposium proceedings |
| spelling | III-V nitrides symposium held December 2 - 6, 1996, Boston, Massachusetts, USA ed.: F. A. Ponce ... Pittsburgh, Pa. Materials Research Soc. 1997 XXV, 1251 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society symposium proceedings 449 (DE-588)1071861417 Konferenzschrift gnd-content Ponce, Fernando A. edt Materials Research Society symposium proceedings 449 (DE-604)BV001899105 449 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018398057&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | III-V nitrides symposium held December 2 - 6, 1996, Boston, Massachusetts, USA Materials Research Society symposium proceedings |
| subject_GND | (DE-588)1071861417 |
| title | III-V nitrides symposium held December 2 - 6, 1996, Boston, Massachusetts, USA |
| title_auth | III-V nitrides symposium held December 2 - 6, 1996, Boston, Massachusetts, USA |
| title_exact_search | III-V nitrides symposium held December 2 - 6, 1996, Boston, Massachusetts, USA |
| title_full | III-V nitrides symposium held December 2 - 6, 1996, Boston, Massachusetts, USA ed.: F. A. Ponce ... |
| title_fullStr | III-V nitrides symposium held December 2 - 6, 1996, Boston, Massachusetts, USA ed.: F. A. Ponce ... |
| title_full_unstemmed | III-V nitrides symposium held December 2 - 6, 1996, Boston, Massachusetts, USA ed.: F. A. Ponce ... |
| title_short | III-V nitrides |
| title_sort | iii v nitrides symposium held december 2 6 1996 boston massachusetts usa |
| title_sub | symposium held December 2 - 6, 1996, Boston, Massachusetts, USA |
| topic_facet | Konferenzschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018398057&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT poncefernandoa iiivnitridessymposiumhelddecember261996bostonmassachusettsusa |