Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As [InGaAs] doped with 3d-transition-metals:
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | German |
| Published: |
Berlin
1989
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| Subjects: | |
| Physical Description: | 104 Blatt Illustrationen, Diagramme |
Staff View
MARC
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| 245 | 1 | 0 | |a Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As [InGaAs] doped with 3d-transition-metals |c von Master Sci. Phys. Zhihao Chen |
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Record in the Search Index
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| author | Chen, Zhihao |
| author_facet | Chen, Zhihao |
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| author_sort | Chen, Zhihao |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV024375982 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:58:19Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-018356161 |
| oclc_num | 916351779 |
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| owner | DE-83 DE-11 |
| owner_facet | DE-83 DE-11 |
| physical | 104 Blatt Illustrationen, Diagramme |
| publishDate | 1989 |
| publishDateSearch | 1989 |
| publishDateSort | 1989 |
| record_format | marc |
| spelling | Chen, Zhihao Verfasser aut Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As [InGaAs] doped with 3d-transition-metals von Master Sci. Phys. Zhihao Chen Berlin 1989 104 Blatt Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Dissertation Technische Universität Berlin 1989 Titan (DE-588)4140648-5 gnd rswk-swf Dotierung (DE-588)4130672-7 gnd rswk-swf Epitaxieschicht (DE-588)4152546-2 gnd rswk-swf Indiumarsenid (DE-588)4249718-8 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Mischkristall (DE-588)4170112-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumarsenid (DE-588)4019155-2 s Indiumarsenid (DE-588)4249718-8 s Mischkristall (DE-588)4170112-4 s Epitaxieschicht (DE-588)4152546-2 s Dotierung (DE-588)4130672-7 s Titan (DE-588)4140648-5 s DE-604 |
| spellingShingle | Chen, Zhihao Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As [InGaAs] doped with 3d-transition-metals Titan (DE-588)4140648-5 gnd Dotierung (DE-588)4130672-7 gnd Epitaxieschicht (DE-588)4152546-2 gnd Indiumarsenid (DE-588)4249718-8 gnd Galliumarsenid (DE-588)4019155-2 gnd Mischkristall (DE-588)4170112-4 gnd |
| subject_GND | (DE-588)4140648-5 (DE-588)4130672-7 (DE-588)4152546-2 (DE-588)4249718-8 (DE-588)4019155-2 (DE-588)4170112-4 (DE-588)4113937-9 |
| title | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As [InGaAs] doped with 3d-transition-metals |
| title_auth | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As [InGaAs] doped with 3d-transition-metals |
| title_exact_search | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As [InGaAs] doped with 3d-transition-metals |
| title_full | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As [InGaAs] doped with 3d-transition-metals von Master Sci. Phys. Zhihao Chen |
| title_fullStr | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As [InGaAs] doped with 3d-transition-metals von Master Sci. Phys. Zhihao Chen |
| title_full_unstemmed | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As [InGaAs] doped with 3d-transition-metals von Master Sci. Phys. Zhihao Chen |
| title_short | Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As [InGaAs] doped with 3d-transition-metals |
| title_sort | electrical and optical properties of epitaxial in 0 53 ga 0 47 as ingaas doped with 3d transition metals |
| topic | Titan (DE-588)4140648-5 gnd Dotierung (DE-588)4130672-7 gnd Epitaxieschicht (DE-588)4152546-2 gnd Indiumarsenid (DE-588)4249718-8 gnd Galliumarsenid (DE-588)4019155-2 gnd Mischkristall (DE-588)4170112-4 gnd |
| topic_facet | Titan Dotierung Epitaxieschicht Indiumarsenid Galliumarsenid Mischkristall Hochschulschrift |
| work_keys_str_mv | AT chenzhihao electricalandopticalpropertiesofepitaxialin053ga047asingaasdopedwith3dtransitionmetals |