Chen, Z. (1989). Electrical and optical properties of epitaxial In 0.53 Ga 0.47 As [InGaAs] doped with 3d-transition-metals.
Chicago-Zitierstil (17. Ausg.)Chen, Zhihao. Electrical and Optical Properties of Epitaxial In 0.53 Ga 0.47 As [InGaAs] Doped with 3d-transition-metals. Berlin, 1989.
MLA-Zitierstil (9. Ausg.)Chen, Zhihao. Electrical and Optical Properties of Epitaxial In 0.53 Ga 0.47 As [InGaAs] Doped with 3d-transition-metals. 1989.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.