Investigation on the short channel silicon on insulator (SOI) MOSFET towards 0.1 [my]m gate length for future VLSI applications:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
Aachen
Shaker
1996
|
| Edition: | Als Ms. gedr. |
| Series: | Berichte aus der Halbleitertechnik
|
| Subjects: | |
| Physical Description: | VI, 202 S. Ill., zahlr. graph. Darst. |
| ISBN: | 3826512286 |
Staff View
MARC
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| 245 | 1 | 0 | |a Investigation on the short channel silicon on insulator (SOI) MOSFET towards 0.1 [my]m gate length for future VLSI applications |c Hans-Oliver Joachim |
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| 300 | |a VI, 202 S. |b Ill., zahlr. graph. Darst. | ||
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| 490 | 0 | |a Berichte aus der Halbleitertechnik | |
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Record in the Search Index
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| author | Joachim, Hans-Oliver |
| author_facet | Joachim, Hans-Oliver |
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| bvnumber | BV023782642 |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV023782642 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:36:42Z |
| institution | BVB |
| isbn | 3826512286 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017424853 |
| oclc_num | 915867631 |
| open_access_boolean | |
| owner | DE-634 |
| owner_facet | DE-634 |
| physical | VI, 202 S. Ill., zahlr. graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | Shaker |
| record_format | marc |
| series2 | Berichte aus der Halbleitertechnik |
| spelling | Joachim, Hans-Oliver Verfasser aut Investigation on the short channel silicon on insulator (SOI) MOSFET towards 0.1 [my]m gate length for future VLSI applications Hans-Oliver Joachim Als Ms. gedr. Aachen Shaker 1996 VI, 202 S. Ill., zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Berichte aus der Halbleitertechnik Zugl.: Osaka, Univ., Diss., 1995 SOI-Technik (DE-588)4128029-5 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf CMOS (DE-588)4010319-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content MOS-FET (DE-588)4207266-9 s SOI-Technik (DE-588)4128029-5 s VLSI (DE-588)4117388-0 s CMOS (DE-588)4010319-5 s DE-604 |
| spellingShingle | Joachim, Hans-Oliver Investigation on the short channel silicon on insulator (SOI) MOSFET towards 0.1 [my]m gate length for future VLSI applications SOI-Technik (DE-588)4128029-5 gnd VLSI (DE-588)4117388-0 gnd MOS-FET (DE-588)4207266-9 gnd CMOS (DE-588)4010319-5 gnd |
| subject_GND | (DE-588)4128029-5 (DE-588)4117388-0 (DE-588)4207266-9 (DE-588)4010319-5 (DE-588)4113937-9 |
| title | Investigation on the short channel silicon on insulator (SOI) MOSFET towards 0.1 [my]m gate length for future VLSI applications |
| title_auth | Investigation on the short channel silicon on insulator (SOI) MOSFET towards 0.1 [my]m gate length for future VLSI applications |
| title_exact_search | Investigation on the short channel silicon on insulator (SOI) MOSFET towards 0.1 [my]m gate length for future VLSI applications |
| title_full | Investigation on the short channel silicon on insulator (SOI) MOSFET towards 0.1 [my]m gate length for future VLSI applications Hans-Oliver Joachim |
| title_fullStr | Investigation on the short channel silicon on insulator (SOI) MOSFET towards 0.1 [my]m gate length for future VLSI applications Hans-Oliver Joachim |
| title_full_unstemmed | Investigation on the short channel silicon on insulator (SOI) MOSFET towards 0.1 [my]m gate length for future VLSI applications Hans-Oliver Joachim |
| title_short | Investigation on the short channel silicon on insulator (SOI) MOSFET towards 0.1 [my]m gate length for future VLSI applications |
| title_sort | investigation on the short channel silicon on insulator soi mosfet towards 0 1 my m gate length for future vlsi applications |
| topic | SOI-Technik (DE-588)4128029-5 gnd VLSI (DE-588)4117388-0 gnd MOS-FET (DE-588)4207266-9 gnd CMOS (DE-588)4010319-5 gnd |
| topic_facet | SOI-Technik VLSI MOS-FET CMOS Hochschulschrift |
| work_keys_str_mv | AT joachimhansoliver investigationontheshortchannelsilicononinsulatorsoimosfettowards01mymgatelengthforfuturevlsiapplications |