APA (7th ed.) Citation

Joachim, H. (1996). Investigation on the short channel silicon on insulator (SOI) MOSFET towards 0.1 [my]m gate length for future VLSI applications (Als Ms. gedr.). Shaker.

Chicago Style (17th ed.) Citation

Joachim, Hans-Oliver. Investigation on the Short Channel Silicon on Insulator (SOI) MOSFET Towards 0.1 [my]m Gate Length for Future VLSI Applications. Als Ms. gedr. Aachen: Shaker, 1996.

MLA (9th ed.) Citation

Joachim, Hans-Oliver. Investigation on the Short Channel Silicon on Insulator (SOI) MOSFET Towards 0.1 [my]m Gate Length for Future VLSI Applications. Als Ms. gedr. Shaker, 1996.