Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14): Kaiserslautern, Germany, 17 - 20 September 2006
Saved in:
| Corporate Author: | |
|---|---|
| Format: | Conference Proceeding Book |
| Language: | English |
| Published: |
Weinheim
Wiley-VCH
2007
|
| Series: | Physica status solidi : C, Current topics in solid state physics
4,6 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Einzelaufnahme eines Zs.-Heftes |
| Physical Description: | S. [1767] - 2189 Ill., graph. Darst. |
Staff View
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV023315213 | ||
| 003 | DE-604 | ||
| 005 | 20090211 | ||
| 007 | t | ||
| 008 | 080527s2007 ad|| |||| 10||| eng d | ||
| 035 | |a (OCoLC)151062730 | ||
| 035 | |a (DE-599)GBV530620316 | ||
| 040 | |a DE-604 |b ger | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-706 | ||
| 050 | 0 | |a QC176.A1 | |
| 111 | 2 | |a Applied Surface Analysis Workshop |n 14 |d 2006 |c Kaiserslautern |j Verfasser |0 (DE-588)6065132-5 |4 aut | |
| 245 | 1 | 0 | |a Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14) |b Kaiserslautern, Germany, 17 - 20 September 2006 |c guest ed.: Hubert Gnaser |
| 264 | 1 | |a Weinheim |b Wiley-VCH |c 2007 | |
| 300 | |a S. [1767] - 2189 |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Physica status solidi : C, Current topics in solid state physics |v 4,6 | |
| 500 | |a Einzelaufnahme eines Zs.-Heftes | ||
| 650 | 7 | |a Semicondutores (congressos) |2 larpcal | |
| 650 | 4 | |a Surfaces (Technology) |x Analysis |v Congresses | |
| 650 | 0 | 7 | |a Oberflächenanalyse |0 (DE-588)4172243-7 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Oberflächenanalyse |0 (DE-588)4172243-7 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Gnaser, Hubert |d 1953- |e Sonstige |0 (DE-588)120507838 |4 oth | |
| 856 | 4 | 2 | |m GBV Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016499418&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-016499418 | ||
Record in the Search Index
| _version_ | 1804137651000836096 |
|---|---|
| adam_text | CURRENT TOPICS IN SOLID STATE PHYSICS EDITORIAL BOARD MARTIN S. BRANDT,
GARCHING MARILIA J. CALDAS, SAO PAULO AXEL HOFFMANN, BERLIN MICHIO
KONDO, TSUKUBA SHUIT-TONG LEE, HONG KONG ANDREW R. LEITCH, PORT
ELIZABETH ANITA LLOYD-SPETZ, LINKOPING PABLO ORDEJ6N, BARCELONA PEDRO P.
PRIETO, CAII JOHN ROBERTSON, CAMBRIDGE MICHAEL S. SHUR, TROY TADEUSZ
SUSKI, WARSAW MARTIN STUTZMANN, GARCHING MARIA C. TAMARGO, NEWYORK JOHN
I. B. WILSON, EDINBURGH MARTIN N. WYBOURNE, HANOVER EDITOR-IN-CHIEF
MARTIN STUTZMANN WALTERSCHOTTKY INSTITUT, TECHNISCHE UNIVERSITAT
MUNCHEN, AM COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49 (0) 89-28
91-27 37; E-MAIL: STUTZ@WSI.TUM.DE REGIONAL EDITORS MARTIN S. BRANDT
WALTER-SCHOTTKY-LNSTITUT, TECHNISCHE UNIVERSITAT MUNCHEN, AM
COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49 (0) 89-28 91-27 37;
E-MAIL: MBRANDT@PHYSIK.TU-MUENCHEN.DE SHUIT-TONG LEE CENTRE
OFSUPER-DIAMOND AND ADVANCED FILMS (COSDAF) AND DEPARTMENTOF PHYSICS AND
MATERIALS SCIENCE CITY UNIVERSITY OF HONG KONG, 83 TATCHEE AVENUE,
KOWLOON, HONG KONG SAR FAX:+852-27 84 46 96; E-MAIL: ST.SEE@CITYU.EDU.HK
PABLO ORDEJON INSTITUT DE CIENCIA DE MATERIALS DE BARCELONA - CSIC
CAMPUS DE LA U.A.B., 08193 BELLATERRA, BARCELONA, SPAIN FAX:+34 93-5 80
57 29; E-MAIL: ORDEJON@ICMAB.ES MICHAEL S. SHUR ELECTRICAL, COMPUTER,
AND SYSTEMS ENGINEERING DEPARTMENT AND PHYSICS DEPARTMENT, RENSSELAER
POLYTECHNIC INSTITUTE, 110 8TH STREET, TROY, NY 12180, USA FAX: +1
518-276 2990; E-MAIL: SHURM@RPI.EDU JOHN I. B. WILSON DEPARTMENT OF
PHYSICS, HERIOT WATT UNIVERSITY, RICCARTON, EDINBURGH EH14 4AS, UK
FAX:+44(0) 1 31-4 51 31 36; E-MAIL: J.I.B.WILSON@HW.AC.UK 4 6 2007
)WILEY-VCH MANAGING EDITOR STEFAN HILDEBRANDT EDITORIAL OFFICE,
WILEY-VCH VERLAG GMBH & CO. KGAA, BUHRINGSTRAQE 10, 13086 BERLIN,
GERMANY FAX:+49 (0) 30-47 03 13 34; E-MAIL: PSS@WILEY-VCH.DE TIBAJB
HANNOVER 130 281 62X 89 CONTENTS FULL TEXT ON OUR HOMEPAGE AT:
HTTP://WWW.PSS-C.COM PAPERS PRESENTED AT THE 14TH APPLIED SURFACE
ANALYSIS WORKSHOP(AOFA 14) KAISERSLAUTERN, GERMANY, 17-20 SEPTEMBER 2006
GUEST EDITOR: HUBERT GNASER ELEMENTAL IMAGING MASS SPECTROMETRY OF THIN
SECTIONS OF TISSUES AND ANALYSIS OFBRAIN PROTEINS IN GELSBY LASER
ABLATION INDUCTIVELYCOUPLEDPLASMA MASS SPECTROMETRY (INVITED) J. SA.
BECKER, M. ZORIY, J. SU. BECKER, J. DOBROWOLSKA, M. DEHNHARDT, ANDA.
MATUSCH .... 1775-1784 SECONDARY ION MASS SPECTROMETRY (SIMS) -
APOWERFULTOOL FOR STUDYINGMASS TRANSPORT OVER VARIOUS LENGTH SCALES
(INVITED) ROGER A. DESOUZA ANDMANFRED MARTIN 1785-1801 ANNEALING
OFEVAPORATEDAND SPUTTEREDNIOBIUM FILMS IN OXYGEN AND NITROGEN RICH
ATMOSPHERES BY RAPID THERMAL PROCESSING (RTP) VOLHA A. MATYLITSKAYA,
OLIVERBRUNKAHL, GERALD KOTHLEITNER, WOLFGANG BOCK, ANDBEMDO. KOLBESEN
1802-1816 MODELINGOF SURFACE ROUGHNESS FOR ARXPS S. OSWALDAND F. OSWALD
1817-1821 STRUCTURAL INVESTIGATIONOFPRISTINE AND ANNEALED
NANOCRYSTALLINE TI02 THIN FILMS BY X-RAY DIFFRACTION AND RAMAN
SPECTROSCOPY A. ORENDORZ,A. BRODYANSKI, J. LOSCH, L. H. BAI, Z. H.
CHEN,Y. K. LE, C. ZIEGLER, ANDH. GNASER 1822-1829 GROWTH STUDIES
OFTA-BASED FILMS ON SIWITHSTM AND XPS W. ZAHN, S. OSWALD, A. FULLE, D.
HILDEBRAND, M. ZIER, AND K. WETZIG 1830-1835 INVESTIGATION OFFEO FILMS
ON SRTIO3(100) B. HEINRICH, A. DEMUND, ANDR. SZARGAN 1836-1843 GAS PHASE
AND BULK PHOTOEMISSION SPECTRAOFHIGHEST OCCUPIEDMOLECULAR ORBITALS OF
PI-CONJUGATED ORGANIC MOLECULES J. SAUTHER, J. WIISTEN, S. LACH,AND CH.
ZIEGLER 1844-1851 THIN NIOBIUM/BORON BILAYERS AND MULTILAYERS ANNEALED
VIARAPIDTHERMAL PROCESSING (RTP) R. MERTENS.W. BOCK, B. LOMMEL, AND B.
O. KOLBESEN 1852-1858 USE OF FOCUSED ION BEAM SAMPLE PREPARATION
FORAUGER ANALYSIS U. SCHEITHAUER 1859-1866 INVESTIGATION OFHOLZ RINGS
INEBSD PATTERNS E. LANGER AND S. DABRITZ 1867-1872 INDUCTION AND
ANALYSIS OFCELL ADHESIONAND DIFFERENTIATION ON INKJET MICROPATTERNED
SUBSTRATES A.BLAUANDT. UGNIWENKO 1873-1876 1770 CONTENTS PAPERS
PRESENTED ATTHE 5TH INTERNATIONAL CONFERENCE POROUS SEMICONDUCTORS -
SCIENCE AND TECHNOLOGY (PSST-2006) SITGES, BARCELONA, SPAIN, 12-17 MARCH
2006 GUEST EDITORS: VITALI PARKHUTIK, ANDROULA G. NASSIOPOULOU, MICHAEL
SAILOR, AND LEIGH CANHAM IN MEMORYOFVITALI PARKHUTIK 1879-1880 IN
MEMORYOFVOLKERLEHMANN 1881-1882 SILICON ELECTROCHEMISTRY
ANDPHOTOELECTROCHEMISTRY QUANTITATIVE MODELLINGOFVOLTAGE OSCILLATIONS
AND OTHER OSCILLATORYPHENOMENA WITH THE CURRENT BURST MODEL E. FOCA, J,
CARSTENSEN, AND H. FOIL DIFFERENTDEPOSITIONBEHAVIOROFCOPPER ON SILICON
AND POROUS SILICON SURFACES DURING IMMERSION PLATING A. KUROKAWA,Y. L.
KAWAMURA, T. SAKKA, ANDY. H. OGATA DIVERSE POROUS SEMICONDUCTORS THERMAL
CONDUCTIVITY FEATURES OF NANOSTRUCTURED CDS/AL203 COMPOSITES L.
NOSOVA,KH. IGAMBERDIEV,V. SOKOLOV, SH. YULDASHEV,A. G. SHASHKOV, AND P.
K. KHABIBULLAEV IN SITU ELECTROCHEMICAL CHARACTERIZATION OFPOROUS N-INP
(100) L. SANTINACCI,A.-M. GONCALVES, C.DAVID, A. EB, I. GERARD,C.
MATBIEU, M. HERLEM, ANDA. ETCHEBERRY POROUS SCREENPRINTEDINDIUM TIN
OXIDE (ITO) FORNO*GAS SENSING H. MBAREK, M. SAADOUN, ANDB.BESSALS SINGLE
CRYSTALLINE GAN GROWN ONPOROUS SI(L 11) BYMOVPE KAI CHENG, S.DEGROOTE,
M. LEYS, B. VAN DAELE, M. GERMAIN, G. VAN TENDELOO, ANDG. BORGHS
MORPHOLOGY AND PHOTOLUMINESCENCE OFANODIZEDALUMINIUM-COATED
6H-SICSAMPLES A. KEFFOUS, K.BOURENANE, N. GABOUZE,M. KECHOUANE, T.
KERDJA, A. MANSERI, L. GUERBOUS, ANDD. OUDJAOUT OPTICAL CHARACTERIZATION
OFSELF-ORDERED POROUS ALUMINA MEMBRANES OFVARIOUS THICKNESSES L.
F.MARSAL, L. VOJKUVKA, J. FERRE-BORRULL, T. TRIFONOV, AND J. PALLARES
MACROPOROUS SILICON GRAVIMETRIC METHOD TO FIND INTERNAL SURFACE
OFMACROPOROUS SILICON MEMBRANES A. A. NECHITAILOV, E. V. ASTROVA, ANDYU.
A. KUKUSHKINA ANODISATION OFBRANCHED AND COLUMNARMACROPORES IN N-TYPE
SILICON UNDER FRONT-SIDE ILLUMINATION V. DEPAUW, H. J. KIM, G.
BEAUCARNE, J. POORTMANS, J.-P. CELIS, AND R. MERTENS
OPTICS:PHENOMENAANDCOMPONENTS COMMERCIAL APPLICATIONS OFPOROUS SI:
OPTICAL FILTERS ANDCOMPONENTS (INVITED) V. KOCHERGIN AND H. FOIL
1933-1940 1883-1887 1888-1892 1893-1897 1898-1902 1903-1907 1908-1912
1913-1917 1918-1922 1923-1927 1928-1932 CONTENTS 1771
QUANTITATIVEMEASUREMENTSOFHYDRO-ALCOHOLIC BINARYMIXTURES BYPOROUS
SILICON OPTICAL MICROSENSORS LUCADE STEFANO, LUCIA ROTIROTI, ILARIAREA,
LUIGI MORETTI, AND IVO RENDINA 1941-1945 AN INTEGRATED HYBRID OPTICAL
DEVICE FOR SENSING APPLICATIONS L. DE STEFANO, I. REA, L. ROTIROTI,L.
FRAGOMENI, F. G. DELIA CORTE, AND I. RENDINA 1946-1950 COMPOSITE
STRUCTURES OFPOROUS SILICON AND POLYANILINE FOR OPTOELECTRONIC
APPLICATIONS B. URBACH, N. KORBAKOV, Y. BAR-DAVID, S. YITZCHAIK, AND A.
SA AR 1951-1955 FABRICATION OFUV FILTERS FROMPOROUS SILICON AT LOW
TEMPERATURES D. BECERRA AND V. AGARWAL 1956-1960 TUNABLE ONE-DIMENSIONAL
PHOTONIC CRYSTAL STRUCTURES BASED ON GROOVED SI INFILTRATED WITH LIQUID
CRYSTALE7 T. S.PEROVA,V.A.TOLMACHEV, E.V.ASTROVA, YU. A. ZHAROVA, ANDS.
M. O NEILL 1961-1965 OPTICS: CHARACTERISATION AND MODELING OPTICAL
PROPERTIES OFPOROUS SILICON THUE-MORSE STRUCTURES LUCADE STEFANO,
ILARIAREA,LUCIA ROTIROTI, LUIGI MORETTI, AND IVO RENDINA 1966-1970 ANEW
APPROACHBASEDON TRANSFER MATRIXFORMALISM TO CHARACTERIZE POROUS SILICON
LAYERS BY REFLECTOMETRY P. PIRASTEH,Y.G. BOUCHER, J. CHARRIER, ANDY.
DUMEIGE 1971-1975 CAPACITANCE METHOD FOR DETERMINATION OFBASIC
PARAMETERS OFPOROUS SILICON A. ADAMYAN, Z.ADAMIAN, ANDV.AROUTIOUNIAN
1976-1980 IMPEDANCE SPECTROSCOPY OF IN-PLANE ANISOTROPICPOROUS SILICON
FILMS P. A. FORSH, M.N. MARTYSHOV,V. YU. TIMOSHENKO, AND P. K. KASHKAROV
1981-1985 BRUGGEMAN EFFECTIVEMEDIUM APPROACH FOR MODELLING OPTICAL
PROPERTIES OFPOROUS SILICON: COMPARISON WITH EXPERIMENT M. KHARDANI, M.
BOUATCHA, AND B. BESSAI S 1986-1990 EFFECTOFFORM ANISOTROPY OF
SILICONNANOCRYSTALS ON BIREFRINGENCEAND DICHROISM INPOROUS SILICON A. I.
EFIMOVA, E. YU.KRUTKOVA, L, A. GOLOVAN, V.YU. TIMOSHENKO, AND P.
K.KASHKAROV. . . 1991-1995 THE BIREFRINGENCE LEVEL OF ANISOTROPICALLY
NANOSTRUCTURED SILICON J. DIENER,N. KIINZNER, E. GROSS,D. KOVALEV, V.
YU. TIMOSHENKO, ANDM. FUJII 1996-2000 ROLE OFSURFACE IN LIGHT INDUCED
DEGRADATIONOFPOROUS SILICON N. P.MANDAL,ABHISHEKKUMAR, AND S. C. AGARWAL
2001-2005 FABRICATION ANDNEWPROCESSING TECHNIQUES AN INVESTIGATIONOF AN
ETCH-THROUGH PROCESS ONPOROUS SILICON P. Y.Y.KANANDT.G.FINSTAD 2006-2010
PRESSURE MEDIATED RELEASE OFHYDROGENFROM SILICON CO-IMPLANTED WITH FL.
ANDHE ANDRZEJ MISIUK ANDADAMBARCZ 2011-2015 FORMATION OFAG-CU
NANOPARTICLES IN SI02 FILMS BY SOL-GEL PROCESS AND THEIR EFFECTON THE
FILM PROPERTIES L. L. DIAZ-FLORES, M. G. GARNFCA-ROMO, J.
GONZALEZ-HERNANDEZ, J. M. YAFIEZ-LIMON, P.VOROBIEV.ANDYV.VOROBIEV
2016-2020 1772 CONTENTS REGULAR PATTERNING OFPS SUBSTRATESBY A
SELF-ASSEMBLED MASK N.NAGY,A. E. PAP, A. DEAK, J. VOLK,E. HORVATH, Z.
HORVOLGYI, AND I. BARSONY 2021-2025 GRADIENT-POROUS STRUCTURE OF SILICON
V. STARKOV AND E. GAVRILIN 2026-2028 POLYMER SUPPORTED POROUS TI02:
APPLICATION TO PHOTO-CATALYSIS M. SAADOUN, H. CHORFI, L. BOUSSELMI, AND
B. BESSALS 2029-2033 LOW REFRACTIVEINDEXPOROUS SILICONMULTILAYER WITH
AHIGH REFLECTION BAND E. XIFREPEREZ, J. PALLARES, J. FERRE-BORRULL, T.
TRIFONOV, AND L. F. MARSAL 2034-2038 EFFECTOFDUTY CYCLEAND FREQUENCY ON
THE MORPHOLOGY OFPOROUS SILICONFORMEDBY ALTERNATING SQUARE PULSEANODIC
ETCHING J. ESCORCIA ANDV.AGARWAL 2039-2043 TWO-STEPS
FUNCTIONALIZATIONPROCESS TO EXTEND THE NOVEL IN SITUPOROUS SILICON
FORMATION- FIMCTIONALIZATIONMETHOD V. VALENTINI, G. MATTEI, F.
CATTARUZZA, ANDA.FLAMINI 2044-2048 CHEMICAL VAPOUR INFILTRATION
OFNANO-STRUCTURED CARBON INPOROUS SILICON G. MATTEI, V. VALENTINI, ANDR.
POLINI 2049-2053 NEW TYPE OFDUAL MACRO ANDNANO FRACTAL STRUCTURE
OFREACTION INDUCEDVAPORPHASE STAINETCHED POROUS SILICON S. STOLYAROVA,
S. WEISS,M. LEVY,AND Y. NEMIROVSKY 2054-2058 GAS SENSING ROOM
TEMPERATURE GAS SENSORBASED ONPOROUS SILICON/METAL OXIDE STRUCTURE V. M.
ARAKELYAN,KH. S. MARTIROSYAN, V. E. GALSTYAN, G. E. SHAHNAZARYAN, AND V.
M. AROUTIOUNIAN 2059-2062 LOW-FREQUENCYNOISE IN STRUCTURESWITHPOROUS
SILICON IN DIFFERENT GASMEDIA Z. H. MKHITARYAN, A.A. SHATVERYAN, V. M.
AROUTIOUNIAN, M. GHULINYAN, AND L. PAVESI . . . . 2063-2067 GAS
SENSITIVEPOROUS SILICON SENSORUSING RAPID THERMAL ANNEALINGSCREEN
PRINTING CONTACTS BE.MAHMOUDI, N. GABOUZE, M. HADDADI,H, CHERAGA, AND S.
BELHOUSSE 2068-2072 SENSING OFCHEMICALVAPORUSINGAPOROUS
MULTILAYERPREPAREDFROM LIGHTLY DOPED SILICON M. S. SALEM, M. J. SAILOR,
F. A. HARRAZ, T. SAKKA, AND Y.H.OGATA 2073-2077 CHEMICAL
SENSINGBYSIMULTANEOUS MEASUREMENT OFPHOTOLUMINESCENCE INTENSITY AND
PHOTOLUMINESCENCE DECAYTIMEOFPOROUS SILICON J. DIAN, V. VRKOSLAV, AND I.
JELMEK 2078-2082 HOST-GUEST INTERACTIONS INGASPHASE CHEMICAL SENSING
OFPERMETHYL-6I-ALKENOYLAMINO-6I-DEOXY-P- CYCLODEXTRIN DERIVATIZEDPOROUS
SILICON I. JELINEK,V. VRKOSLAV, T.TROJAN, J. JINDFICH, AND J.DIAN
2083-2087 CELL CULTUREANDBIOSENSING SENSING WITH POROUS SILICONDOUBLE
LAYERS: A GENERAL APPROACH FOR BACKGROUND SUPPRESSION CLAUDIA PACHOLSKI
ANDMICHAEL J. SAILOR 2088-2092 CONTENTS 1773 MICROSYSTEM APPLICATIONS
DEVELOPMENTOF ANEW MICROFLUIDIC ANALYSIS SYSTEM BASED ON POROUS SILICON
AS SENSITIVE ELEMENT MIHAELAMIU,ANCAANGELESCU, IRINA KLEPS,
FLOREACRACIUNOIU, MONICA SIMION, ADINA BRAGARU, ANDTEODORA IGNAT
2093-2097 ELECTRICAL STUDY OFMICROFLUIDIC CHANNELS ISOLATED WITH
CHEMICALLY MODIFIEDPOROUS SILICON E. MERY, C. MALHAIRE, B. REMAKI, AND
D. BARBIER 2098-2102 SOLAR CELLS CALCULATION OFREFLECTANCE OFPOROUS
SILICON DOUBLE-LAYER ANTIREFLECTION COATING FOR SILICON SOLAR CELLS KH.
S. MARTIROSYAN,A. S. HOVHANNISYAN, ANDV. M. AROUTIOUNIAN 2103-2106
REFLECTANCESPECTRUMOF DIAMOND-LIKE CARBON/POROUS SILICON DOUBLE-LAYER
ANTIREFLECTION COATINGS DESIGNED FOR SILICON SOLAR CELLS V. M.
AROUTIOUNIAN, KH. S. MARTIROSYAN, AND P. G. SOUKIASSIAN 2107-2110
CONDUCTIVITY OFFREE-STANDINGPOROUS SILICON LAYERS USING TERAHERTZ
DIFFERENTIAL TIME-DOMAIN SPECTROSCOPY S. RAMANI,ALAN CHEVILLE, J.
ESCORCIAGARCIA, AND V.AGARWAL 2111-2115 ADSORPTION, OXIDATION AND
CORROSION PECULIARITIES OFOZONE ADSORPTION ON APOROUS SILICONSURFACE AT
LOW TEMPERATURE V. B. PIKULEV,A. A. TSYGANENKO, S. N. KUZNETSOV,A. A.
SAREN, ANDV. A.GURTOV 2116-2120 INFLUENCE OFIODINE MOLECULE ADSORPTIONON
ELECTRONIC PROPERTIES OFPOROUS SILICON STUDIEDBYFTIR ANDEPR SPECTROSCOPY
L. A. OSMINKINA,A. S.VORONTSOV, S.A. KUTERGIN,A. E. TKACHENKO, D. A.
MAMICHEV, A. V. PAVLIKOV, E. A.KONSTANTINOVA, V. YU. TIMOSHENKO, AND
P.K.KASHKAROV 2121-2125 EFFECT OFAMMONIA ADSORPTIONON CHARGE CARRIERS
INMESOPOROUS SILICON OFN- ANDP-TYPE CONDUCTIVITY ALEXANDERV. PAVLIKOV,
LIUBOVA. OSMINKINA,ALEXANDER S. VORONTSOV, VICTORYU. TIMOSHENKO,
ANDPAVEL K. KASHKAROV 2126-2130 DETECTIONOF DIFFERENT STATES OFWATERAND
OXIDE LAYER INPOROUS SILICON BYIR SPECTROSCOPY M. YE. KORNIYENKO, V. A.
MAKARA, V. B. SHEVCHENKO, A. M. KOMIYENKO, T. S. VEBLAYA, ANDM.M.MAKHNO
2131-2135 INFLUENCEOFPOROUS SILICON OXIDATIONON ITS BEHAVIOUR IN
SIMULATEDBODY FLUID E. PASTOR, E. MATVEEVA, V. PARKHUTIK, J.
CURIEL-ESPARZA, ANDM. C. MILLAN 2136-2140 LUMINESCENCE ANDLASING
STABILIZATIONOFNANO-CRYSTALLINE POROUS SILICON ELECTROLUMINESCENCEBY
HIGH PRESSURE WATERVAPOR ANNEALING B. GELLOZ,T, SHIBATA, ANDN. KOSHIDA
2141-2144 OPTICAL GAIN IN OXIDIZED POROUS SILICONWAVEGUIDES IMPREGNATED
WITH A LASERDYE C. J. OTON, D. NAVARRO-URRIOS, M. GHULINYAN, N. E.
CAPUJ, S. GONZALEZ-PEREZ, F. LAHOZ, I. R. MARTIN, AND L. PAVESI
2145-2149 ROLEOFHYDROGEN IN THEPHOTOINDUCED EVOLUTION OFPOROUS
SILICONLUMINESCENCE R. R. KOROPECKI,R. ARCE, C. SPIES, A. M. GERMARO,
AND J. SCHMIDT 2150-2154 1774 CONTENTS LUMINESCENCE FROMPOROUS LAYERS
PRODUCEDBY AG-ASSISTED ELECTROLESS ETCHING T. HADJERSI ANDN. GABOUZE
2155-2159 PHOTOLUMINESCENCEFROM POROUS LAYERS FORMED ON
PHOSPHORUS-IMPLANTED SILICON BY AG-ASSISTED CHEMICAL ETCHING N. GABOUZE,
T. HADJERSI, AND L. GUERBOUS 2160-2164 LIGHT-EMISSION CHARACTERISTICS OF
SILICON NANOCRYSTALS FORMEDBY ANODIZATION OFBULK CRYSTALLINE SILICON IN
THE TRANSITION REGIME S. GARDELIS AND A. G.NASSIOPOULOU 2165-2169
EFFICIENT LUMINESCENCE FROMRHODAMINE 6GABSORBED BYPOROUS ALUMINA:
EXCITATION MECHANISMS A. MOADHEN, H. ELHOUICHET, L.NOSOVA, ANDM.
OUESLATI 2170-2174 NEW OPPORTUNITIES INNOVATIVE ELECTROCHEMICAL DEEP
ETCHING TECHNIQUEINVOLVING ALUMINUMTHERMOMIGRATION S. KOUASSI, G.
GAUTIER, L. VENTURA, J. SEMAI, C. BOULMER-LEBORGNE,B. MORILLON, AND M.
ROY 2175-2179 INVESTIGATIONS ON POROUS SILICON AS ELECTRODE MATERIAL IN
ELECTROCHEMICAL CAPACITORS S. DESPLOBAIN, G. GAUTIER, J. SEMAI, L.
VENTURA, ANDM.ROY 2180-2184 POROUS SILICON SURFACES FORMETABONOMICS:
DETECTION AND IDENTIFICATION OFNUCLEOTIDES WITHOUT MATRIX INTERFERENCE
D. GOMEZ, JOSE ANDRES FERNANDEZ, EGOITZ ASTIGARRAGA, ARRATEMARCAIDE,
ANDSABINO AZCARATE 2185-2189 PHYSICA STATUS SOLIDI (C) IS INDEXED IN
CAMBRIDGE SCIENTIFIC ABSTRACTS; CSA TECHNOLOGY RESEARCH DATABASE
(CSA/C1G); CHEMICAL ABSTRACTS SERVICE/SCIFINDER (ACS); COMPENDEX
(ELSEVIER); FIZ KARLSRUHE DATABASES (FIZ KARLSRUHE); GOOGLE SCHOLAR;
INSPEC; PHYSICS ABSTRACTS (IET); ISI INDEX TO SCIENTIFIC & TECHNICAL
PROCEEDINGS; PASCAL DATABASE (INIST/CNRS); SCOPUS (ELSEVIER); VINITI
(ALL-RUSSIAN INSTITUTE OFSCIENCE&TECHNOLOGICAL INFORMATION). DOI: THE
FASTEST WAY TO FIND AN ARTICLE ONLINE IS THE DIGITAL OBJECT IDENTIFIER
(DOI). DOIS ARE PRINTED IN THE HEADER OF THE FIRST PAGE OF EVERY
ARTICLE. ON THE WWW, ONE CAN FIND AN ARTICLE FOR EXAMPLE WITH A DOI OF
1O.1002/PSSC.200306190 AT HTTP://DX.DOI.ORG/10.1002/PSSC.200306190.
PLEASE USE THE DOI OF THE ARTICLE TO LINK FROM YOUR HOME PAGE TO THE
ARTICLES IN WILEY INTERSCIENCE. THE DOI IS A SYSTEM FOR THE PERSISTENT
IDENTIFICATION OF DOCUMENTS ON DIGITAL NETWORKS, SEE WWW.DOI.ORG.
|
| adam_txt |
CURRENT TOPICS IN SOLID STATE PHYSICS EDITORIAL BOARD MARTIN S. BRANDT,
GARCHING MARILIA J. CALDAS, SAO PAULO AXEL HOFFMANN, BERLIN MICHIO
KONDO, TSUKUBA SHUIT-TONG LEE, HONG KONG ANDREW R. LEITCH, PORT
ELIZABETH ANITA LLOYD-SPETZ, LINKOPING PABLO ORDEJ6N, BARCELONA PEDRO P.
PRIETO, CAII JOHN ROBERTSON, CAMBRIDGE MICHAEL S. SHUR, TROY TADEUSZ
SUSKI, WARSAW MARTIN STUTZMANN, GARCHING MARIA C. TAMARGO, NEWYORK JOHN
I. B. WILSON, EDINBURGH MARTIN N. WYBOURNE, HANOVER EDITOR-IN-CHIEF
MARTIN STUTZMANN WALTERSCHOTTKY INSTITUT, TECHNISCHE UNIVERSITAT
MUNCHEN, AM COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49 (0) 89-28
91-27 37; E-MAIL: STUTZ@WSI.TUM.DE REGIONAL EDITORS MARTIN S. BRANDT
WALTER-SCHOTTKY-LNSTITUT, TECHNISCHE UNIVERSITAT MUNCHEN, AM
COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49 (0) 89-28 91-27 37;
E-MAIL: MBRANDT@PHYSIK.TU-MUENCHEN.DE SHUIT-TONG LEE CENTRE
OFSUPER-DIAMOND AND ADVANCED FILMS (COSDAF) AND DEPARTMENTOF PHYSICS AND
MATERIALS SCIENCE CITY UNIVERSITY OF HONG KONG, 83 TATCHEE AVENUE,
KOWLOON, HONG KONG SAR FAX:+852-27 84 46 96; E-MAIL: ST.SEE@CITYU.EDU.HK
PABLO ORDEJON INSTITUT DE CIENCIA DE MATERIALS DE BARCELONA - CSIC
CAMPUS DE LA U.A.B., 08193 BELLATERRA, BARCELONA, SPAIN FAX:+34 93-5 80
57 29; E-MAIL: ORDEJON@ICMAB.ES MICHAEL S. SHUR ELECTRICAL, COMPUTER,
AND SYSTEMS ENGINEERING DEPARTMENT AND PHYSICS DEPARTMENT, RENSSELAER
POLYTECHNIC INSTITUTE, 110 8TH STREET, TROY, NY 12180, USA FAX: +1
518-276 2990; E-MAIL: SHURM@RPI.EDU JOHN I. B. WILSON DEPARTMENT OF
PHYSICS, HERIOT WATT UNIVERSITY, RICCARTON, EDINBURGH EH14 4AS, UK
FAX:+44(0) 1 31-4 51 31 36; E-MAIL: J.I.B.WILSON@HW.AC.UK 4 6 2007
)WILEY-VCH MANAGING EDITOR STEFAN HILDEBRANDT EDITORIAL OFFICE,
WILEY-VCH VERLAG GMBH & CO. KGAA, BUHRINGSTRAQE 10, 13086 BERLIN,
GERMANY FAX:+49 (0) 30-47 03 13 34; E-MAIL: PSS@WILEY-VCH.DE TIBAJB
HANNOVER 130 281 62X 89 CONTENTS FULL TEXT ON OUR HOMEPAGE AT:
HTTP://WWW.PSS-C.COM PAPERS PRESENTED AT THE 14TH APPLIED SURFACE
ANALYSIS WORKSHOP(AOFA 14) KAISERSLAUTERN, GERMANY, 17-20 SEPTEMBER 2006
GUEST EDITOR: HUBERT GNASER ELEMENTAL IMAGING MASS SPECTROMETRY OF THIN
SECTIONS OF TISSUES AND ANALYSIS OFBRAIN PROTEINS IN GELSBY LASER
ABLATION INDUCTIVELYCOUPLEDPLASMA MASS SPECTROMETRY (INVITED) J. SA.
BECKER, M. ZORIY, J. SU. BECKER, J. DOBROWOLSKA, M. DEHNHARDT, ANDA.
MATUSCH . 1775-1784 SECONDARY ION MASS SPECTROMETRY (SIMS) -
APOWERFULTOOL FOR STUDYINGMASS TRANSPORT OVER VARIOUS LENGTH SCALES
(INVITED) ROGER A. DESOUZA ANDMANFRED MARTIN 1785-1801 ANNEALING
OFEVAPORATEDAND SPUTTEREDNIOBIUM FILMS IN OXYGEN AND NITROGEN RICH
ATMOSPHERES BY RAPID THERMAL PROCESSING (RTP) VOLHA A. MATYLITSKAYA,
OLIVERBRUNKAHL, GERALD KOTHLEITNER, WOLFGANG BOCK, ANDBEMDO. KOLBESEN
1802-1816 MODELINGOF SURFACE ROUGHNESS FOR ARXPS S. OSWALDAND F. OSWALD
1817-1821 STRUCTURAL INVESTIGATIONOFPRISTINE AND ANNEALED
NANOCRYSTALLINE TI02 THIN FILMS BY X-RAY DIFFRACTION AND RAMAN
SPECTROSCOPY A. ORENDORZ,A. BRODYANSKI, J. LOSCH, L. H. BAI, Z. H.
CHEN,Y. K. LE, C. ZIEGLER, ANDH. GNASER 1822-1829 GROWTH STUDIES
OFTA-BASED FILMS ON SIWITHSTM AND XPS W. ZAHN, S. OSWALD, A. FULLE, D.
HILDEBRAND, M. ZIER, AND K. WETZIG 1830-1835 INVESTIGATION OFFEO FILMS
ON SRTIO3(100) B. HEINRICH, A. DEMUND, ANDR. SZARGAN 1836-1843 GAS PHASE
AND BULK PHOTOEMISSION SPECTRAOFHIGHEST OCCUPIEDMOLECULAR ORBITALS OF
PI-CONJUGATED ORGANIC MOLECULES J. SAUTHER, J. WIISTEN, S. LACH,AND CH.
ZIEGLER 1844-1851 THIN NIOBIUM/BORON BILAYERS AND MULTILAYERS ANNEALED
VIARAPIDTHERMAL PROCESSING (RTP) R. MERTENS.W. BOCK, B. LOMMEL, AND B.
O. KOLBESEN 1852-1858 USE OF FOCUSED ION BEAM SAMPLE PREPARATION
FORAUGER ANALYSIS U. SCHEITHAUER 1859-1866 INVESTIGATION OFHOLZ RINGS
INEBSD PATTERNS E. LANGER AND S. DABRITZ 1867-1872 INDUCTION AND
ANALYSIS OFCELL ADHESIONAND DIFFERENTIATION ON INKJET MICROPATTERNED
SUBSTRATES A.BLAUANDT. UGNIWENKO 1873-1876 1770 CONTENTS PAPERS
PRESENTED ATTHE 5TH INTERNATIONAL CONFERENCE POROUS SEMICONDUCTORS -
SCIENCE AND TECHNOLOGY (PSST-2006) SITGES, BARCELONA, SPAIN, 12-17 MARCH
2006 GUEST EDITORS: VITALI PARKHUTIK, ANDROULA G. NASSIOPOULOU, MICHAEL
SAILOR, AND LEIGH CANHAM IN MEMORYOFVITALI PARKHUTIK 1879-1880 IN
MEMORYOFVOLKERLEHMANN 1881-1882 SILICON ELECTROCHEMISTRY
ANDPHOTOELECTROCHEMISTRY QUANTITATIVE MODELLINGOFVOLTAGE OSCILLATIONS
AND OTHER OSCILLATORYPHENOMENA WITH THE CURRENT BURST MODEL E. FOCA, J,
CARSTENSEN, AND H. FOIL DIFFERENTDEPOSITIONBEHAVIOROFCOPPER ON SILICON
AND POROUS SILICON SURFACES DURING IMMERSION PLATING A. KUROKAWA,Y. L.
KAWAMURA, T. SAKKA, ANDY. H. OGATA DIVERSE POROUS SEMICONDUCTORS THERMAL
CONDUCTIVITY FEATURES OF NANOSTRUCTURED CDS/AL203 COMPOSITES L.
NOSOVA,KH. IGAMBERDIEV,V. SOKOLOV, SH. YULDASHEV,A. G. SHASHKOV, AND P.
K. KHABIBULLAEV IN SITU ELECTROCHEMICAL CHARACTERIZATION OFPOROUS N-INP
(100) L. SANTINACCI,A.-M. GONCALVES, C.DAVID, A. EB, I. GERARD,C.
MATBIEU, M. HERLEM, ANDA. ETCHEBERRY POROUS SCREENPRINTEDINDIUM TIN
OXIDE (ITO) FORNO*GAS SENSING H. MBAREK, M. SAADOUN, ANDB.BESSALS SINGLE
CRYSTALLINE GAN GROWN ONPOROUS SI(L 11) BYMOVPE KAI CHENG, S.DEGROOTE,
M. LEYS, B. VAN DAELE, M. GERMAIN, G. VAN TENDELOO, ANDG. BORGHS
MORPHOLOGY AND PHOTOLUMINESCENCE OFANODIZEDALUMINIUM-COATED
6H-SICSAMPLES A. KEFFOUS, K.BOURENANE, N. GABOUZE,M. KECHOUANE, T.
KERDJA, A. MANSERI, L. GUERBOUS, ANDD. OUDJAOUT OPTICAL CHARACTERIZATION
OFSELF-ORDERED POROUS ALUMINA MEMBRANES OFVARIOUS THICKNESSES L.
F.MARSAL, L. VOJKUVKA, J. FERRE-BORRULL, T. TRIFONOV, AND J. PALLARES
MACROPOROUS SILICON GRAVIMETRIC METHOD TO FIND INTERNAL SURFACE
OFMACROPOROUS SILICON MEMBRANES A. A. NECHITAILOV, E. V. ASTROVA, ANDYU.
A. KUKUSHKINA ANODISATION OFBRANCHED AND COLUMNARMACROPORES IN N-TYPE
SILICON UNDER FRONT-SIDE ILLUMINATION V. DEPAUW, H. J. KIM, G.
BEAUCARNE, J. POORTMANS, J.-P. CELIS, AND R. MERTENS
OPTICS:PHENOMENAANDCOMPONENTS COMMERCIAL APPLICATIONS OFPOROUS SI:
OPTICAL FILTERS ANDCOMPONENTS (INVITED) V. KOCHERGIN AND H. FOIL
1933-1940 1883-1887 1888-1892 1893-1897 1898-1902 1903-1907 1908-1912
1913-1917 1918-1922 1923-1927 1928-1932 CONTENTS 1771
QUANTITATIVEMEASUREMENTSOFHYDRO-ALCOHOLIC BINARYMIXTURES BYPOROUS
SILICON OPTICAL MICROSENSORS LUCADE STEFANO, LUCIA ROTIROTI, ILARIAREA,
LUIGI MORETTI, AND IVO RENDINA 1941-1945 AN INTEGRATED HYBRID OPTICAL
DEVICE FOR SENSING APPLICATIONS L. DE STEFANO, I. REA, L. ROTIROTI,L.
FRAGOMENI, F. G. DELIA CORTE, AND I. RENDINA 1946-1950 COMPOSITE
STRUCTURES OFPOROUS SILICON AND POLYANILINE FOR OPTOELECTRONIC
APPLICATIONS B. URBACH, N. KORBAKOV, Y. BAR-DAVID, S. YITZCHAIK, AND A.
SA'AR 1951-1955 FABRICATION OFUV FILTERS FROMPOROUS SILICON AT LOW
TEMPERATURES D. BECERRA AND V. AGARWAL 1956-1960 TUNABLE ONE-DIMENSIONAL
PHOTONIC CRYSTAL STRUCTURES BASED ON GROOVED SI INFILTRATED WITH LIQUID
CRYSTALE7 T. S.PEROVA,V.A.TOLMACHEV, E.V.ASTROVA, YU. A. ZHAROVA, ANDS.
M. O'NEILL 1961-1965 OPTICS: CHARACTERISATION AND MODELING OPTICAL
PROPERTIES OFPOROUS SILICON THUE-MORSE STRUCTURES LUCADE STEFANO,
ILARIAREA,LUCIA ROTIROTI, LUIGI MORETTI, AND IVO RENDINA 1966-1970 ANEW
APPROACHBASEDON TRANSFER MATRIXFORMALISM TO CHARACTERIZE POROUS SILICON
LAYERS BY REFLECTOMETRY P. PIRASTEH,Y.G. BOUCHER, J. CHARRIER, ANDY.
DUMEIGE 1971-1975 CAPACITANCE METHOD FOR DETERMINATION OFBASIC
PARAMETERS OFPOROUS SILICON A. ADAMYAN, Z.ADAMIAN, ANDV.AROUTIOUNIAN
1976-1980 IMPEDANCE SPECTROSCOPY OF IN-PLANE ANISOTROPICPOROUS SILICON
FILMS P. A. FORSH, M.N. MARTYSHOV,V. YU. TIMOSHENKO, AND P. K. KASHKAROV
1981-1985 BRUGGEMAN EFFECTIVEMEDIUM APPROACH FOR MODELLING OPTICAL
PROPERTIES OFPOROUS SILICON: COMPARISON WITH EXPERIMENT M. KHARDANI, M.
BOUATCHA, AND B. BESSAI'S 1986-1990 EFFECTOFFORM ANISOTROPY OF
SILICONNANOCRYSTALS ON BIREFRINGENCEAND DICHROISM INPOROUS SILICON A. I.
EFIMOVA, E. YU.KRUTKOVA, L, A. GOLOVAN, V.YU. TIMOSHENKO, AND P.
K.KASHKAROV. . . 1991-1995 THE BIREFRINGENCE LEVEL OF ANISOTROPICALLY
NANOSTRUCTURED SILICON J. DIENER,N. KIINZNER, E. GROSS,D. KOVALEV, V.
YU. TIMOSHENKO, ANDM. FUJII 1996-2000 ROLE OFSURFACE IN LIGHT INDUCED
DEGRADATIONOFPOROUS SILICON N. P.MANDAL,ABHISHEKKUMAR, AND S. C. AGARWAL
2001-2005 FABRICATION ANDNEWPROCESSING TECHNIQUES AN INVESTIGATIONOF AN
ETCH-THROUGH PROCESS ONPOROUS SILICON P. Y.Y.KANANDT.G.FINSTAD 2006-2010
PRESSURE MEDIATED RELEASE OFHYDROGENFROM SILICON CO-IMPLANTED WITH FL.
ANDHE ANDRZEJ MISIUK ANDADAMBARCZ 2011-2015 FORMATION OFAG-CU
NANOPARTICLES IN SI02 FILMS BY SOL-GEL PROCESS AND THEIR EFFECTON THE
FILM PROPERTIES L. L. DIAZ-FLORES, M. G. GARNFCA-ROMO, J.
GONZALEZ-HERNANDEZ, J. M. YAFIEZ-LIMON, P.VOROBIEV.ANDYV.VOROBIEV
2016-2020 1772 CONTENTS REGULAR PATTERNING OFPS SUBSTRATESBY A
SELF-ASSEMBLED MASK N.NAGY,A. E. PAP, A. DEAK, J. VOLK,E. HORVATH, Z.
HORVOLGYI, AND I. BARSONY 2021-2025 GRADIENT-POROUS STRUCTURE OF SILICON
V. STARKOV AND E. GAVRILIN 2026-2028 POLYMER SUPPORTED POROUS TI02:
APPLICATION TO PHOTO-CATALYSIS M. SAADOUN, H. CHORFI, L. BOUSSELMI, AND
B. BESSALS 2029-2033 LOW REFRACTIVEINDEXPOROUS SILICONMULTILAYER WITH
AHIGH REFLECTION BAND E. XIFREPEREZ, J. PALLARES, J. FERRE-BORRULL, T.
TRIFONOV, AND L. F. MARSAL 2034-2038 EFFECTOFDUTY CYCLEAND FREQUENCY ON
THE MORPHOLOGY OFPOROUS SILICONFORMEDBY ALTERNATING SQUARE PULSEANODIC
ETCHING J. ESCORCIA ANDV.AGARWAL 2039-2043 TWO-STEPS
FUNCTIONALIZATIONPROCESS TO EXTEND THE NOVEL IN SITUPOROUS SILICON
FORMATION- FIMCTIONALIZATIONMETHOD V. VALENTINI, G. MATTEI, F.
CATTARUZZA, ANDA.FLAMINI 2044-2048 CHEMICAL VAPOUR INFILTRATION
OFNANO-STRUCTURED CARBON INPOROUS SILICON G. MATTEI, V. VALENTINI, ANDR.
POLINI 2049-2053 NEW TYPE OFDUAL MACRO ANDNANO FRACTAL STRUCTURE
OFREACTION INDUCEDVAPORPHASE STAINETCHED POROUS SILICON S. STOLYAROVA,
S. WEISS,M. LEVY,AND Y. NEMIROVSKY 2054-2058 GAS SENSING ROOM
TEMPERATURE GAS SENSORBASED ONPOROUS SILICON/METAL OXIDE STRUCTURE V. M.
ARAKELYAN,KH. S. MARTIROSYAN, V. E. GALSTYAN, G. E. SHAHNAZARYAN, AND V.
M. AROUTIOUNIAN 2059-2062 LOW-FREQUENCYNOISE IN STRUCTURESWITHPOROUS
SILICON IN DIFFERENT GASMEDIA Z. H. MKHITARYAN, A.A. SHATVERYAN, V. M.
AROUTIOUNIAN, M. GHULINYAN, AND L. PAVESI . . . . 2063-2067 GAS
SENSITIVEPOROUS SILICON SENSORUSING RAPID THERMAL ANNEALINGSCREEN
PRINTING CONTACTS BE.MAHMOUDI, N. GABOUZE, M. HADDADI,H, CHERAGA, AND S.
BELHOUSSE 2068-2072 SENSING OFCHEMICALVAPORUSINGAPOROUS
MULTILAYERPREPAREDFROM LIGHTLY DOPED SILICON M. S. SALEM, M. J. SAILOR,
F. A. HARRAZ, T. SAKKA, AND Y.H.OGATA 2073-2077 CHEMICAL
SENSINGBYSIMULTANEOUS MEASUREMENT OFPHOTOLUMINESCENCE INTENSITY AND
PHOTOLUMINESCENCE DECAYTIMEOFPOROUS SILICON J. DIAN, V. VRKOSLAV, AND I.
JELMEK 2078-2082 HOST-GUEST INTERACTIONS INGASPHASE CHEMICAL SENSING
OFPERMETHYL-6I-ALKENOYLAMINO-6I-DEOXY-P- CYCLODEXTRIN DERIVATIZEDPOROUS
SILICON I. JELINEK,V. VRKOSLAV, T.TROJAN, J. JINDFICH, AND J.DIAN
2083-2087 CELL CULTUREANDBIOSENSING SENSING WITH POROUS SILICONDOUBLE
LAYERS: A GENERAL APPROACH FOR BACKGROUND SUPPRESSION CLAUDIA PACHOLSKI
ANDMICHAEL J. SAILOR 2088-2092 CONTENTS 1773 MICROSYSTEM APPLICATIONS
DEVELOPMENTOF ANEW MICROFLUIDIC ANALYSIS SYSTEM BASED ON POROUS SILICON
AS SENSITIVE ELEMENT MIHAELAMIU,ANCAANGELESCU, IRINA KLEPS,
FLOREACRACIUNOIU, MONICA SIMION, ADINA BRAGARU, ANDTEODORA IGNAT
2093-2097 ELECTRICAL STUDY OFMICROFLUIDIC CHANNELS ISOLATED WITH
CHEMICALLY MODIFIEDPOROUS SILICON E. MERY, C. MALHAIRE, B. REMAKI, AND
D. BARBIER 2098-2102 SOLAR CELLS CALCULATION OFREFLECTANCE OFPOROUS
SILICON DOUBLE-LAYER ANTIREFLECTION COATING FOR SILICON SOLAR CELLS KH.
S. MARTIROSYAN,A. S. HOVHANNISYAN, ANDV. M. AROUTIOUNIAN 2103-2106
REFLECTANCESPECTRUMOF DIAMOND-LIKE CARBON/POROUS SILICON DOUBLE-LAYER
ANTIREFLECTION COATINGS DESIGNED FOR SILICON SOLAR CELLS V. M.
AROUTIOUNIAN, KH. S. MARTIROSYAN, AND P. G. SOUKIASSIAN 2107-2110
CONDUCTIVITY OFFREE-STANDINGPOROUS SILICON LAYERS USING TERAHERTZ
DIFFERENTIAL TIME-DOMAIN SPECTROSCOPY S. RAMANI,ALAN CHEVILLE, J.
ESCORCIAGARCIA, AND V.AGARWAL 2111-2115 ADSORPTION, OXIDATION AND
CORROSION PECULIARITIES OFOZONE ADSORPTION ON APOROUS SILICONSURFACE AT
LOW TEMPERATURE V. B. PIKULEV,A. A. TSYGANENKO, S. N. KUZNETSOV,A. A.
SAREN, ANDV. A.GURTOV 2116-2120 INFLUENCE OFIODINE MOLECULE ADSORPTIONON
ELECTRONIC PROPERTIES OFPOROUS SILICON STUDIEDBYFTIR ANDEPR SPECTROSCOPY
L. A. OSMINKINA,A. S.VORONTSOV, S.A. KUTERGIN,A. E. TKACHENKO, D. A.
MAMICHEV, A. V. PAVLIKOV, E. A.KONSTANTINOVA, V. YU. TIMOSHENKO, AND
P.K.KASHKAROV 2121-2125 EFFECT OFAMMONIA ADSORPTIONON CHARGE CARRIERS
INMESOPOROUS SILICON OFN- ANDP-TYPE CONDUCTIVITY ALEXANDERV. PAVLIKOV,
LIUBOVA. OSMINKINA,ALEXANDER S. VORONTSOV, VICTORYU. TIMOSHENKO,
ANDPAVEL K. KASHKAROV 2126-2130 DETECTIONOF DIFFERENT STATES OFWATERAND
OXIDE LAYER INPOROUS SILICON BYIR SPECTROSCOPY M. YE. KORNIYENKO, V. A.
MAKARA, V. B. SHEVCHENKO, A. M. KOMIYENKO, T. S. VEBLAYA, ANDM.M.MAKHNO
2131-2135 INFLUENCEOFPOROUS SILICON OXIDATIONON ITS BEHAVIOUR IN
SIMULATEDBODY FLUID E. PASTOR, E. MATVEEVA, V. PARKHUTIK, J.
CURIEL-ESPARZA, ANDM. C. MILLAN 2136-2140 LUMINESCENCE ANDLASING
STABILIZATIONOFNANO-CRYSTALLINE POROUS SILICON ELECTROLUMINESCENCEBY
HIGH PRESSURE WATERVAPOR ANNEALING B. GELLOZ,T, SHIBATA, ANDN. KOSHIDA
2141-2144 OPTICAL GAIN IN OXIDIZED POROUS SILICONWAVEGUIDES IMPREGNATED
WITH A LASERDYE C. J. OTON, D. NAVARRO-URRIOS, M. GHULINYAN, N. E.
CAPUJ, S. GONZALEZ-PEREZ, F. LAHOZ, I. R. MARTIN, AND L. PAVESI
2145-2149 ROLEOFHYDROGEN IN THEPHOTOINDUCED EVOLUTION OFPOROUS
SILICONLUMINESCENCE R. R. KOROPECKI,R. ARCE, C. SPIES, A. M. GERMARO,
AND J. SCHMIDT 2150-2154 1774 CONTENTS LUMINESCENCE FROMPOROUS LAYERS
PRODUCEDBY AG-ASSISTED ELECTROLESS ETCHING T. HADJERSI ANDN. GABOUZE
2155-2159 PHOTOLUMINESCENCEFROM POROUS LAYERS FORMED ON
PHOSPHORUS-IMPLANTED SILICON BY AG-ASSISTED CHEMICAL ETCHING N. GABOUZE,
T. HADJERSI, AND L. GUERBOUS 2160-2164 LIGHT-EMISSION CHARACTERISTICS OF
SILICON NANOCRYSTALS FORMEDBY ANODIZATION OFBULK CRYSTALLINE SILICON IN
THE TRANSITION REGIME S. GARDELIS AND A. G.NASSIOPOULOU 2165-2169
EFFICIENT LUMINESCENCE FROMRHODAMINE 6GABSORBED BYPOROUS ALUMINA:
EXCITATION MECHANISMS A. MOADHEN, H. ELHOUICHET, L.NOSOVA, ANDM.
OUESLATI 2170-2174 NEW OPPORTUNITIES INNOVATIVE ELECTROCHEMICAL DEEP
ETCHING TECHNIQUEINVOLVING ALUMINUMTHERMOMIGRATION S. KOUASSI, G.
GAUTIER, L. VENTURA, J. SEMAI, C. BOULMER-LEBORGNE,B. MORILLON, AND M.
ROY 2175-2179 INVESTIGATIONS ON POROUS SILICON AS ELECTRODE MATERIAL IN
ELECTROCHEMICAL CAPACITORS S. DESPLOBAIN, G. GAUTIER, J. SEMAI, L.
VENTURA, ANDM.ROY 2180-2184 POROUS SILICON SURFACES FORMETABONOMICS:
DETECTION AND IDENTIFICATION OFNUCLEOTIDES WITHOUT MATRIX INTERFERENCE
D. GOMEZ, JOSE ANDRES FERNANDEZ, EGOITZ ASTIGARRAGA, ARRATEMARCAIDE,
ANDSABINO AZCARATE 2185-2189 PHYSICA STATUS SOLIDI (C) IS INDEXED IN
CAMBRIDGE SCIENTIFIC ABSTRACTS; CSA TECHNOLOGY RESEARCH DATABASE
(CSA/C1G); CHEMICAL ABSTRACTS SERVICE/SCIFINDER (ACS); COMPENDEX
(ELSEVIER); FIZ KARLSRUHE DATABASES (FIZ KARLSRUHE); GOOGLE SCHOLAR;
INSPEC; PHYSICS ABSTRACTS (IET); ISI INDEX TO SCIENTIFIC & TECHNICAL
PROCEEDINGS; PASCAL DATABASE (INIST/CNRS); SCOPUS (ELSEVIER); VINITI
(ALL-RUSSIAN INSTITUTE OFSCIENCE&TECHNOLOGICAL INFORMATION). DOI: THE
FASTEST WAY TO FIND AN ARTICLE ONLINE IS THE DIGITAL OBJECT IDENTIFIER
(DOI). DOIS ARE PRINTED IN THE HEADER OF THE FIRST PAGE OF EVERY
ARTICLE. ON THE WWW, ONE CAN FIND AN ARTICLE FOR EXAMPLE WITH A DOI OF
1O.1002/PSSC.200306190 AT HTTP://DX.DOI.ORG/10.1002/PSSC.200306190.
PLEASE USE THE DOI OF THE ARTICLE TO LINK FROM YOUR HOME PAGE TO THE
ARTICLES IN WILEY INTERSCIENCE. THE DOI IS A SYSTEM FOR THE PERSISTENT
IDENTIFICATION OF DOCUMENTS ON DIGITAL NETWORKS, SEE WWW.DOI.ORG. |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author_GND | (DE-588)120507838 |
| author_corporate | Applied Surface Analysis Workshop Kaiserslautern |
| author_corporate_role | aut |
| author_facet | Applied Surface Analysis Workshop Kaiserslautern |
| author_sort | Applied Surface Analysis Workshop Kaiserslautern |
| building | Verbundindex |
| bvnumber | BV023315213 |
| callnumber-first | Q - Science |
| callnumber-label | QC176 |
| callnumber-raw | QC176.A1 |
| callnumber-search | QC176.A1 |
| callnumber-sort | QC 3176 A1 |
| callnumber-subject | QC - Physics |
| ctrlnum | (OCoLC)151062730 (DE-599)GBV530620316 |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01627nam a2200373 cb4500</leader><controlfield tag="001">BV023315213</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20090211 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">080527s2007 ad|| |||| 10||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)151062730</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBV530620316</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-706</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC176.A1</subfield></datafield><datafield tag="111" ind1="2" ind2=" "><subfield code="a">Applied Surface Analysis Workshop</subfield><subfield code="n">14</subfield><subfield code="d">2006</subfield><subfield code="c">Kaiserslautern</subfield><subfield code="j">Verfasser</subfield><subfield code="0">(DE-588)6065132-5</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14)</subfield><subfield code="b">Kaiserslautern, Germany, 17 - 20 September 2006</subfield><subfield code="c">guest ed.: Hubert Gnaser</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Weinheim</subfield><subfield code="b">Wiley-VCH</subfield><subfield code="c">2007</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">S. [1767] - 2189</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Physica status solidi : C, Current topics in solid state physics</subfield><subfield code="v">4,6</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Einzelaufnahme eines Zs.-Heftes</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semicondutores (congressos)</subfield><subfield code="2">larpcal</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surfaces (Technology)</subfield><subfield code="x">Analysis</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Oberflächenanalyse</subfield><subfield code="0">(DE-588)4172243-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Oberflächenanalyse</subfield><subfield code="0">(DE-588)4172243-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gnaser, Hubert</subfield><subfield code="d">1953-</subfield><subfield code="e">Sonstige</subfield><subfield code="0">(DE-588)120507838</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">GBV Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016499418&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-016499418</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift gnd-content |
| genre_facet | Konferenzschrift |
| id | DE-604.BV023315213 |
| illustrated | Illustrated |
| index_date | 2024-07-02T20:51:50Z |
| indexdate | 2024-07-09T21:15:40Z |
| institution | BVB |
| institution_GND | (DE-588)6065132-5 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016499418 |
| oclc_num | 151062730 |
| open_access_boolean | |
| owner | DE-706 |
| owner_facet | DE-706 |
| physical | S. [1767] - 2189 Ill., graph. Darst. |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | Wiley-VCH |
| record_format | marc |
| series2 | Physica status solidi : C, Current topics in solid state physics |
| spelling | Applied Surface Analysis Workshop 14 2006 Kaiserslautern Verfasser (DE-588)6065132-5 aut Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14) Kaiserslautern, Germany, 17 - 20 September 2006 guest ed.: Hubert Gnaser Weinheim Wiley-VCH 2007 S. [1767] - 2189 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Physica status solidi : C, Current topics in solid state physics 4,6 Einzelaufnahme eines Zs.-Heftes Semicondutores (congressos) larpcal Surfaces (Technology) Analysis Congresses Oberflächenanalyse (DE-588)4172243-7 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Oberflächenanalyse (DE-588)4172243-7 s DE-604 Gnaser, Hubert 1953- Sonstige (DE-588)120507838 oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016499418&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14) Kaiserslautern, Germany, 17 - 20 September 2006 Semicondutores (congressos) larpcal Surfaces (Technology) Analysis Congresses Oberflächenanalyse (DE-588)4172243-7 gnd |
| subject_GND | (DE-588)4172243-7 (DE-588)1071861417 |
| title | Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14) Kaiserslautern, Germany, 17 - 20 September 2006 |
| title_auth | Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14) Kaiserslautern, Germany, 17 - 20 September 2006 |
| title_exact_search | Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14) Kaiserslautern, Germany, 17 - 20 September 2006 |
| title_exact_search_txtP | Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14) Kaiserslautern, Germany, 17 - 20 September 2006 |
| title_full | Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14) Kaiserslautern, Germany, 17 - 20 September 2006 guest ed.: Hubert Gnaser |
| title_fullStr | Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14) Kaiserslautern, Germany, 17 - 20 September 2006 guest ed.: Hubert Gnaser |
| title_full_unstemmed | Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14) Kaiserslautern, Germany, 17 - 20 September 2006 guest ed.: Hubert Gnaser |
| title_short | Papers presented at the 14th Applied Surface Analysis Workshop (AOFA 14) |
| title_sort | papers presented at the 14th applied surface analysis workshop aofa 14 kaiserslautern germany 17 20 september 2006 |
| title_sub | Kaiserslautern, Germany, 17 - 20 September 2006 |
| topic | Semicondutores (congressos) larpcal Surfaces (Technology) Analysis Congresses Oberflächenanalyse (DE-588)4172243-7 gnd |
| topic_facet | Semicondutores (congressos) Surfaces (Technology) Analysis Congresses Oberflächenanalyse Konferenzschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016499418&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT appliedsurfaceanalysisworkshopkaiserslautern paperspresentedatthe14thappliedsurfaceanalysisworkshopaofa14kaiserslauterngermany1720september2006 AT gnaserhubert paperspresentedatthe14thappliedsurfaceanalysisworkshopaofa14kaiserslauterngermany1720september2006 |