Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France, 15 - 19 May 2006:
Saved in:
| Corporate Author: | |
|---|---|
| Format: | Conference Proceeding Book |
| Language: | English |
| Published: |
Weinheim
Wiley-VCH
2007
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| Series: | Physica status solidi : C, Current topics in solid state physics
4,1 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Einzelaufnahme eines Zs.-Heftes |
| Physical Description: | 215 S. Ill., graph. Darst. |
Staff View
MARC
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| 245 | 1 | 0 | |a Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France, 15 - 19 May 2006 |c guest ed.: Thierry Bretagnon ... |
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Record in the Search Index
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| adam_text | CURRENT TOPICS IN SOLID STATE PHYSICS EDITORIAL BOARD MARTIN S. BRANDT,
GARCHING MARILIA J. CALDAS, SAOE PAULO AXEL HOFFMANN, BERLIN MICHIO
KONDO, TSUKUBA SHUIT-TONG LEE, HONG KONG ANDREW R. LEITCH, PORT
ELIZABETH ANITA LLOYD-SPETZ, UNKOEPING PABLO ORDEJOEN, BARCELONA PEDRO P.
PRIETO, CALI JOHN ROBERTSON, CAMBRIDGE MICHAEL S. SHUR, TROY TADEUSZ
SUSKI, WARSAW MARTIN STUTZMANN, GARCHING MARIA C. TAMARGO, NEW YORK JOHN
I. B. WILSON, EDINBURGH MARTIN N. WYBOURNE, HANOVER EDITOR-IN-CHIEF
MARTIN STUTZMANN WALTER SCHOTTKY INSTITUT, TECHNISCHE UNIVERSITAET
MUENCHEN, AM COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49 (0) 89-28
91-27 37; E-MAIL: STUTZ@WSI.TUM.DE REGIONAL EDITORS MARTIN S. BRANDT
WALTER-SCHOTTKY-INSTITUT, TECHNISCHE UNIVERSITAET MUENCHEN, AM
COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49 (0) 89-28 91-27 37;
E-MAIL: MBRANDT@PHYSIK.TU-MUENCHEN.DE SHUIT-TONG LEE CENTRE OF
SUPER-DIAMOND AND ADVANCED FILMS (COSDAF) AND DEPARTMENT OF PHYSICS AND
MATERIALS SCIENCE CITY UNIVERSITY OF HONG KONG, 83 TAT CHEE AVENUE,
KOWLOON, HONG KONG SAR FAX: +8 52-27 84 46 96; E-MAIL:
ST.LEE@CITYU.EDU.HK PABLO ORDEJOEN INSTITUT DE CIENCIA DE MATERIALS DE
BARCELONA - CSIC CAMPUS DE LA U.A.B., 08193 BELLATERRA, BARCELONA, SPAIN
FAX: +34 93-5 80 57 29; E-MAIL: ORDEJON@ICMAB.ES MICHAEL S. SHUR
ELECTRICAL, COMPUTER, AND SYSTEMS ENGINEERING DEPARTMENT AND PHYSICS
DEPARTMENT, RENSSELAER POLYTECHNIC INSTITUTE, 110 8TH STREET, TROY, NY
12180, USA FAX: +1 518-276 2990; E-MAIL: SHURM@RPI.EDU JOHN I. B.WILSON
DEPARTMENT OF PHYSICS, HERIOT WATT UNIVERSITY, RICCARTON, EDINBURGH EH14
4AS, UK FAX: +44 (0) 1 31 -4 51 31 36; E-MAIL: J.I.B.WILSON@HW.AC.UK 4 1
2007 )WILEY-VCH MANAGING EDITOR STEFAN HILDEBRANDT EDITORIAL OFFICE,
WILEY-VCH VERLAG GMBH & CO. KGAA, BUEHRINGSTRASSE 10, 13086 BERLIN,
GERMANY FAX: +49 (0) 30-47 03 13 34; E-MAIL: PSS@WILEY-VCH.DE CONTENTS
FUELL TEXT ON OUR HOMEPAGE AT: HTTP://WWW.PSS-C.COM EDITORIAL IT S TIME
TO CELEBRATE! MARTIN STUTZMANN 7-8 PAPERS PRESENTED AT THE 6TH
INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES (ISBLLED
2006) MONTPELLIER, FRANCE, 15-19 MAY 2006 GUEST EDITORS: THIERRY
BRETAGNON, SANDRA RUFFENACH, AND OLIVIER BRIOT LIGHT EMITTING DIODES THE
QUANTUM EFFICIENCY OF GREEN GALNN/GAN LIGHT EMITTING DIODES W. ZHAO, Y.
LI, T. DETCHPROHM, AND C. WETZEL 9-12 QUANTUM WELL-FREE NITRIDE-BASED UV
LEDS EMITTING AT 380 NM PHILIPPE DE MIERRY, FRANK TINJOD, SEBASTIEN
CHENOT, AND DAVID LANCEFIELD 13-16 HIGH BRIGHTNESS GAN VERTICAL LIGHT
EMITTING DIODES ON METAL ALLOYED SUBSTRATE FOR GENERAL LIGHTING
APPLICATION CHEN-FU CHU, CHAO-CHEN CHENG, WEN-HUAN LIU, JIUNN-YI CHU,
HAO-CHUN CHENG, FENG-HSU FAN, JUI-KANG YEN, CHUONG ANH TRAN, AND TRUNG
DOAN 17-20 IMPRINT LITHOGRAPHY ADVANCES IN LED MANUFACTURING ROBERT
HERSHEY, GARY DOYLE, CHRIS JONES, DWAYNE LABRAKE, AND MIKE MILLER 21-24
FABRICATION AND OPTICAL PROPERTIES OF BLUE LEDS WITH SILICA MICROSPHERE
COATING K. KUSAKABE, S. FUNAZAKI, K. OKAMOTO, S.NISHIZAWA, ANDK. OHKAWA
25-28 FABRICATION OF SAG-ALGAN/INGAN/ALGAN LEDS BY MIXED-SOURCE HVPE
WITH MULTI-SLIDING BOAT SYSTEM K. H. KIM, K. S. JANG, S. L. HWANG, H. S.
JEON, W. J. CHOI, M. YANG, H. S. AHN, S. W. KIM, Y. HONDA, M. YAMAGUCHI,
N. SAWAKI, J. YOO, S. M. LEE, AND M. KOIKE 29-32 IMPROVEMENT OF SURFACE
LIGHT EXTRACTION FROM FLIP-CHIP GAN-BASED LED BY EMBOSSING OF THERMOSET-
TING POLYMERS KUI BAO, BEI ZHANG, ZHIMIN WANG, TAO DAI, XIANGNING KANG,
ZHIZHONG CHEN, KE XU, HANG JI, YONG CHEN, AND ZIZHAO GAN 33-36 ANALYSIS
OF THE RELATION BETWEEN LEAKAGE CURRENT AND DISLOCATIONS IN GAN-BASED
LIGHT-EMITTING DEVICES S. W. LEE, D. C. OH, H. GOTO, J. S. HA, H. J.
LEE, T. HANADA, M. W. CHO, S. K. HONG, H. Y. LEE, S. R. CHO, J. W. CHOI,
J. H. CHOI, J. H. JANG, J. E. SHIN, J. S. LEE, AND T. YAO. . . . 37-40
BLUE LIGHT EMITTING DIODES ON SI(001) GROWN BY MOVPE F. SCHULZE, A.
DADGAR, F. BERTRAM, J. BLAESING, A. DIEZ, P. VEIT, R. CLOS, J. CHRISTEN,
ANDA. KROST 41-44 4 CONTENTS CURRENT SPREADING AND THERMAL EFFECTS IN
BLUE LED DICE K. A. BULASHEVICH, I. YU. EVSTRATOV, V. F. MYRNRIN, AND S.
YU. KARPOV 45-48 EFFICIENCY ENHANCEMENT OF 400 NM VIOLET LEDS UTILIZING
ISLAND-LIKE GAN THICK FILM BY HVPE TECHNOLOGY JENQ-DAR TSAY, PO CHUN
LIU, YIH-DER GUO, JING-MEI WANG, WEN-YUEH LIU, SHYI-MING PAN, LIANG-WEN
WU, AND MICHAEL HEUKEN 49-52 FABRICATION OF GAN-BASED ELECTROLUMMESCENT
DEVICES ON AI SUBSTRATES AND THEIR APPLICATION TO RED, GREEN AND BLUE
PIXELS FOR FLAT-PANEL DISPLAYS KOICHI SUGIMOTO, SHINICHI EGAWA,
MASATOSHI ARAI, AND TOHRU HONDA 53-56 MONOLITHIC WHITE LIGHT EMITTING
DIODES WITH A BROAD EMISSION SPECTRUM A. DUSSAIGNE, J. BRAULT, B.
DAMILANO, AND J. MASSIES 57-60 GAN-BASED SCHOTTKY-TYPE UV LIGHT-EMITTING
DIODES AND THEIR INTEGRATION FOR FLAT-PANEL DISPLAYS TOSHIAKI KOBAYASHI,
SHINICHI EGAWA, MASARU SAWADA, AND TOHRU HONDA 61-64 SOL-GEL BASED YAG:
CE 3+ POWDERS FOR APPLICATIONS IN LED DEVICES A. POTDEVIN, G. CHADEYRON,
D. BOYER, AND R. MAHIOU 65-69 LASER DIODES NEGATIVE CHARACTERISTIC
TEMPERATURE OF INGAN BLUE MULTIPLE-QUANTUM-WELL LASER DIODES H. Y. RYU,
K. H. HA, S. N. LEE, T. JANG, H. K. KIM, J. K. SON, J. H. CHAE, K. S.
KIM, K. K. CHOI, H. S. PAEK, Y. J. SUNG, T. SAKONG, O. H. NAM, AND Y. J.
PARK 70-73 HOMOEPITAXIAL LASER DIODES EMITTING AT 390 NM AND THE
INFLUENCE OF SUBSTRATE QUALITY STEPHAN FIGGE, JENS DENNEMARCK, AND
DETLEF HOMMEL 74-77 DEEP RIDGE GAN CW-LASER DIODES J. DENNEMARCK, C.
TESSAREK, S. FIGGE, AND D. HOMMEL 78-81 OPTICAL GAIN AND SATURATION
BEHAVIOR IN HOMOEPITAXIALLY GROWN INGAN/GAN/AIGAN LASER STRUCTURES T.
SWIETLIK, P. PERLIN, T. SUSKI, M. LESZCZYNSKI, R. CZERNECKI, I.
GRZEGORY, AND S. POROWSKI 82-85 PHOTO DETECTORS AND NOVEL DEVICES
M-PLANE GAN-BASED DICHROIC PHOTODETECTORS C. RIVERA, P. MISRA, J. L.
PAU, E. MUFIOZ, O. BRANDT, H T. GRAHN, AND K. H. PLOOG 86-89 FABRICATION
AND OPTICAL CHARACTERIZATION OF III-NITRIDE AIR-BRIDGE PHOTONIC CRYSTAL
WITH GAN QUANTUM DOTS NING LI, M. ARITA, S. KAKO, M. KITAMURA, S.
IWAMOTO, AND Y. ARAKAWA 90-94 PHOTONIC CRYSTALS COMPRISING SELECTIVELY
GROWN FLAT-TOPPED AND SHARP-TIPPED GAN PYRAMIDS D. COQUILLAT, M. LE
VASSOR D YERVILLE, S. A. BOUBANGA TOMBET, C. LIU, K. BEJTKA, I. M.
WATSON, P. R EDWARDS, R. W. MARTIN, H. M. H. CHONG, AND R. M. DE LA RUE
95-99 SPATIAL MAPPING ON SURFACE LIGHT EXTRACTION FROM 2D PHOTONIC
QUASICRYSTALS PATTERNED GAN-BASED LIGHT EMITTERS ZHENSHENG ZHANG, BEI
ZHANG, TAO DAI, KUI BAO, DAN LIU, XIAO WANG, XIANGNING KANG, JUN XU,
DAPENG YU, AND XING ZHU 100-103 PHOTONIC CIRCUITS WRITING WITH UV PULSED
LASER K. R. KRIBICH, S. GATTI, J. JABBOUR, G. PILLE, S. CALAS, T.
MAZINGUE, P. ETIENNE, R. LEGROS, ANDY. MOREAU 104-107 CONTENTS 5 STRENG
COUPLING IN BULK GAN MICROCAVITIES GROWN ON SILICON F. REVERET, I. R.
SEILERS, P. DISSEIX, J. LEYMARIE, A. VASSON, F. SEMOND, M. LEROUX, ANDJ.
MASSIES 108-111 GROWTH AND CHARACTERIZATION GROWTH BEHAVIOR AND OPTICAL
PROPERTIES OF IN-RICH INGAN QUANTUM DOTS BY METAL-ORGANIC CHEMICAL VAPOR
DEPOSITION HEE JIN KIM, SOON-YONG KWON, HYUN JIN KIM, HYUNSEOK NA, YOORI
SHIN, KEON-HUN LEE, HO-SANG KWAK, YONG HOON CHO, JUNG WON YOON, HYEONSIK
CHEONG, AND EUIJOONYOON . . . 112-115 GROWTH OF THICK GAN LAYERS ON
C-PLANE SAPPHIRE SUBSTRATES USING STRESS ABSORBING LAYER (SAL) H. GOTO,
S. W. LEE, J. KINOMOTO, S. T. KIM, H. C. KO, M. W. CHO, AND T. YAO
116-119 IMPROVED A1N BUFFER LAYER TECHNOLOGIES FOR UV-LEDS F. RANALLI,
P. J. PARBROOK, T. WANG, J. BAI, K. B. LEE, R. J. AIREY, G. HILL, A.
TAHRAOUI, AND A. G. CULLIS 120-124 GROWTH OF INGAN LAYER ON GAN
TEMPLATED A1 2 0 3 (0001) AND SI(L 11) SUBSTRATES BY MIXED-SOURCE HVPE
S. L. HWANG, K. S. JANG, K. H. KIM, H. S. JEON, H. S. AHN, M. YANG, S.
W. KIM, Y. HONDA, M. YAMAGUCHI, N. SAWAKI, J. YOO, S. M. LEE, AND M.
KOIKE 125-128 GAN PROPERTY EVOLUTION AT ALL STAGES OF MOVPE SI/N
TREATMENT GROWTH I. HALIDOU, Z. BENZARTI, H. FITOURI, W. FATHALLAH, AND
B. EL JANI 129-132 CHARACTERIZATION OF ALGAN, TE-DOPED GAN AND MG-DOPED
GAN GROWN BY HYDRIDE VAPOR PHASE EPITAXY K. S. JANG, K. H. KIM, S. L.
HWANG, H. S. JEON, H. S. AHN, M. YANG, W. J. CHOI, S. W. KIM, Y. HONDA,
M. YAMAGUCHI, N. SAWAKI, J. YOO, S. M. LEE, AND M. KOIKE 133-136 HIGH
INDIUM CONTENT ALINGAN FILMS: GROWTH, STRUCTURE AND OPTOELECTRONIC
PROPERTIES M. NEMOZ, E. BERAUDO, P. DE MIERRY, P. VENNEGUES, AND L.
HIRSCH 137-140 SURFACE MODIFICATIONS AND OPTICAL PROPERTIES OF BLUE
INGAN SINGLE QUANTUM WELL BY IN-SITU THERMAL TREATMENTS SUNG-NAM LEE, H.
S. PAEK, J. K. SON, T. SAKONG, Y. N. KWON, O. H. NAM, AND Y. PARK . . .
. 141-144 ANALYSIS OF GAN DECOMPOSITION IN AN ATMOSPHERIC MOVPE VERTICAL
REACTOR W. FATHALLAH, T. BOUFADEN, AND B. EL JANI 145-149 INITIAL GROWTH
STAGES OF MOVPE INN STUDIED BY AFM AND SPECULAR REFLECTIVITY A. VAN DER
LEE, F. SALAH, B. HARZALLAH, S. RUFFENACH, AND O. BRIOT 150-153 GROWTH
KINETICS AND PROPERTIES OF ZNO/ZNMGO HETERO-STRUCTURES GROWN BY
RADICAL-SOURCE MOLECULAR BEAM EPITAXY S. V IVANOV, A. EL-SHAER, T. V.
SHUBINA, S. B. LISTOSHIN, A. BAKIN, AND A. WAAG 154-157 ZNMGO-ZNO
QUANTUM WELLS EMBEDDED IN ZNO NANOPILLARS: TOWARDS REALISATION OF
NANO-LEDS A. BAKIN, A. EL-SHAER, A. C. MOFOR, M. AL-SULEIMAN, E.
SCHLENKER, AND A. WAAG 158-161 ZNO FILMS FABRICATED BY SPIN COATING AND
THEIR APPLICATION TO UV ELECTROLUMINESCENT DEVICES K. YOSHIOKA, S.
EGAWA, T. KOBAYASHI, T. BABA, K. SUGIMOTO, M. ARAI, H. NOMURA, M. SATO,
AND T.HONDA 162-165 MATERIALS CHARACTERIZATION CATHODOLUMINESCENCE STUDY
OF INGAN MQW LASER DIODES USING LASER LIFT-OFF TECHNIQUE RUI LI, WEIHUA
CHEN, XIANGNING KANG, KE XU, JUN XU, ZHIJIAN YANG, RUIJUAN NIE, TONGJUN
YU, ZHIZHONG CHEN, ZHIXIN QIN, GUOYI ZHANG, ZIZHAO GAN, AND XIAODONG HU
. . . . 166-169 6 CONTENTS PHONONS IN STRAINED ALGAN/GAN SUPERLATTICES
V. DARAKCHIEVA, B. MONEMAR, T. PASKOVA, S. EINFELDT, D. HOMMEL, AND S.
LOURDUDOSS . . . . 170-174 FAST TIME BEHAVIOR OF THE POLARIZATION
FILTERING IN ANISOTROPICALLY STRAINED M-PLANE GAN FILMS T. FLISSIKOWSKI,
P. MISRA, O. BRANDT, AND H. T. GRAHN 175-178 TEMPERATURE- AND EXCITATION
DENSITY DEPENDENCY OF PHOTOLUMINESCENCE SPECTRA IN
INGAN/GAN-HETEROSTRUCTURES C. VIERHEILIG, H. BRAUN, U. T. SCHWARZ, W.
WEGSCHEIDER, E. BAUR, U. STRAUSS, AND V. HAERLE . . 179-182 RADIATIVE
LIFETIME IN WURTZITE GAN/ALN QUANTUM DOTS R. BARDOUX, T. BRETAGNON, T.
GUILLET, P. LEFEBVRE, T. TALIERCIO, P. VALVIN, B. GIL, N. GRANDJEAN, B.
DAMILANO, A. DUSSAIGNE, AND J. MASSIES 183-186 A COMPARATIVE STUDY OF
THE INTERNAL QUANTUM EFFICIENCY FOR THE GREEN MQWS GROWN ON SAPPHIRE AND
FS-GAN SUBSTRATES YONG-HEE JEONG, HAE-YONG LEE, JAE-YOUNG PARK, JONG-PIL
JEONG, CHANG-HEE HONG, AND EUN-KYUNG SUH 187-191 INVESTIGATION OF
INTERNAL FIELD EFFECT AND BLUE-SHIFT IN INGAN-BASED BLUE LASER DIODES BY
TIME-RESOLVED OPTICAL TECHNIQUE J. K. SON, T. SAKONG, J. S. HWANG, S. N.
LEE, H. S. PAEK, H. Y. RYU, K. H. HA, Y. H. CHO, O. NAM, AND Y. PARK
192-195 FOCUSED ION BEAM ETCHED NITRIDE/AIR DBRS AS CAVITY MIRROR FACETS
OF VIOLET INGAN/GAN MULTIPLE- QUANTUM WELL LASER DIODES TAO DAI, BEI
ZHANG, ZHENSHENG ZHANG, JUN XU, WEIHUA CHEN, RUI LI, KUI BAO, QIYUAN
WEI, KE XU, XIAODONG HU, ZHIJIAN YANG, XIANGNING KANG, YAOBO PAN, MIN
LU, GUOYI ZHANG, ANDZIZHAOGAN 196-199 DRY ETCHING OF N-FACE GAN USING
TWO HIGH-DENSITY PLASMA ETCH TECHNIQUES F. RIZZI, K. BEJTKA, F. SEMOND,
E. GU, M. D. DAWSON, I. M. WATSON, AND R. W. MARTIN . . . . 200-203
ELASTIC CONSTANTS OF ALUMINUM NITRIDE M. KAZAN, E. MOUSSAED, R. NADER,
AND P. MASRI 204-207 EFFECTS OF LATTICE-MISMATCH INDUCED BUILT-IN STRAIN
ON THE VALENCE BAND PROPERTIES OF WURTZITE ZNO/ZNI ^MG^O QUANTUM WELL
HETEROSTRUCTURES K. ZITOUNI AND A. KADRI 208-211 ON THE USE OF THE
THERMAL STEP METHOD AS A TOOL FOR STUDY OF SPACE CHARGE IN SEMICONDUCTOR
GALLIUM NITRIDE: GAN M. S. BERGAOUI, A. MATOUSSI, N. CHAABANE, S.
GUERMAZI, A. TOUREILLE, AND B. EL JANI 212-215 FURTHER PAPERS OF
CONFERENCE ISBLLED 2006 ARE PUBLISHED IN PHYSICA STATUS SOLIDI (A) 204,
NO. 1 (2007). PHYSICA STATUS SOLIDI (C) IS INDEXED IN CAMBRIDGE
SCIENTIFIC ABSTRACTS; CHEMICAL ABSTRACTS; ENGINEERING INDEX COMPENDEX;
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INDEX TO SCIENTIFIC & TECHNICAL PROCEEDINGS; OCLC WORLDCAT; PASCAL,
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ONLINE IS THE DIGITAL OBJECT IDENTIFIER (DOL). DOLS ARE PRINTED IN THE
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HTTP://DX.DOI.ORG/10.1002/PSSC.200306190. PLEASE USE THE DOL OF THE
ARTICIE TO LINK FROM YOUR HOME PAGE TO THE ARTICLES IN WILEY
INTERSCIENCE. THE DOL IS A SYSTEM FOR THE PERSISTENT IDENTIFICATION OF
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|
| adam_txt |
CURRENT TOPICS IN SOLID STATE PHYSICS EDITORIAL BOARD MARTIN S. BRANDT,
GARCHING MARILIA J. CALDAS, SAOE PAULO AXEL HOFFMANN, BERLIN MICHIO
KONDO, TSUKUBA SHUIT-TONG LEE, HONG KONG ANDREW R. LEITCH, PORT
ELIZABETH ANITA LLOYD-SPETZ, UNKOEPING PABLO ORDEJOEN, BARCELONA PEDRO P.
PRIETO, CALI JOHN ROBERTSON, CAMBRIDGE MICHAEL S. SHUR, TROY TADEUSZ
SUSKI, WARSAW MARTIN STUTZMANN, GARCHING MARIA C. TAMARGO, NEW YORK JOHN
I. B. WILSON, EDINBURGH MARTIN N. WYBOURNE, HANOVER EDITOR-IN-CHIEF
MARTIN STUTZMANN WALTER SCHOTTKY INSTITUT, TECHNISCHE UNIVERSITAET
MUENCHEN, AM COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49 (0) 89-28
91-27 37; E-MAIL: STUTZ@WSI.TUM.DE REGIONAL EDITORS MARTIN S. BRANDT
WALTER-SCHOTTKY-INSTITUT, TECHNISCHE UNIVERSITAET MUENCHEN, AM
COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49 (0) 89-28 91-27 37;
E-MAIL: MBRANDT@PHYSIK.TU-MUENCHEN.DE SHUIT-TONG LEE CENTRE OF
SUPER-DIAMOND AND ADVANCED FILMS (COSDAF) AND DEPARTMENT OF PHYSICS AND
MATERIALS SCIENCE CITY UNIVERSITY OF HONG KONG, 83 TAT CHEE AVENUE,
KOWLOON, HONG KONG SAR FAX: +8 52-27 84 46 96; E-MAIL:
ST.LEE@CITYU.EDU.HK PABLO ORDEJOEN INSTITUT DE CIENCIA DE MATERIALS DE
BARCELONA - CSIC CAMPUS DE LA U.A.B., 08193 BELLATERRA, BARCELONA, SPAIN
FAX: +34 93-5 80 57 29; E-MAIL: ORDEJON@ICMAB.ES MICHAEL S. SHUR
ELECTRICAL, COMPUTER, AND SYSTEMS ENGINEERING DEPARTMENT AND PHYSICS
DEPARTMENT, RENSSELAER POLYTECHNIC INSTITUTE, 110 8TH STREET, TROY, NY
12180, USA FAX: +1 518-276 2990; E-MAIL: SHURM@RPI.EDU JOHN I. B.WILSON
DEPARTMENT OF PHYSICS, HERIOT WATT UNIVERSITY, RICCARTON, EDINBURGH EH14
4AS, UK FAX: +44 (0) 1 31 -4 51 31 36; E-MAIL: J.I.B.WILSON@HW.AC.UK 4 1
2007 )WILEY-VCH MANAGING EDITOR STEFAN HILDEBRANDT EDITORIAL OFFICE,
WILEY-VCH VERLAG GMBH & CO. KGAA, BUEHRINGSTRASSE 10, 13086 BERLIN,
GERMANY FAX: +49 (0) 30-47 03 13 34; E-MAIL: PSS@WILEY-VCH.DE CONTENTS
FUELL TEXT ON OUR HOMEPAGE AT: HTTP://WWW.PSS-C.COM EDITORIAL IT'S TIME
TO CELEBRATE! MARTIN STUTZMANN 7-8 PAPERS PRESENTED AT THE 6TH
INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES (ISBLLED
2006) MONTPELLIER, FRANCE, 15-19 MAY 2006 GUEST EDITORS: THIERRY
BRETAGNON, SANDRA RUFFENACH, AND OLIVIER BRIOT LIGHT EMITTING DIODES THE
QUANTUM EFFICIENCY OF GREEN GALNN/GAN LIGHT EMITTING DIODES W. ZHAO, Y.
LI, T. DETCHPROHM, AND C. WETZEL 9-12 QUANTUM WELL-FREE NITRIDE-BASED UV
LEDS EMITTING AT 380 NM PHILIPPE DE MIERRY, FRANK TINJOD, SEBASTIEN
CHENOT, AND DAVID LANCEFIELD 13-16 HIGH BRIGHTNESS GAN VERTICAL LIGHT
EMITTING DIODES ON METAL ALLOYED SUBSTRATE FOR GENERAL LIGHTING
APPLICATION CHEN-FU CHU, CHAO-CHEN CHENG, WEN-HUAN LIU, JIUNN-YI CHU,
HAO-CHUN CHENG, FENG-HSU FAN, JUI-KANG YEN, CHUONG ANH TRAN, AND TRUNG
DOAN 17-20 IMPRINT LITHOGRAPHY ADVANCES IN LED MANUFACTURING ROBERT
HERSHEY, GARY DOYLE, CHRIS JONES, DWAYNE LABRAKE, AND MIKE MILLER 21-24
FABRICATION AND OPTICAL PROPERTIES OF BLUE LEDS WITH SILICA MICROSPHERE
COATING K. KUSAKABE, S. FUNAZAKI, K. OKAMOTO, S.NISHIZAWA, ANDK. OHKAWA
25-28 FABRICATION OF SAG-ALGAN/INGAN/ALGAN LEDS BY MIXED-SOURCE HVPE
WITH MULTI-SLIDING BOAT SYSTEM K. H. KIM, K. S. JANG, S. L. HWANG, H. S.
JEON, W. J. CHOI, M. YANG, H. S. AHN, S. W. KIM, Y. HONDA, M. YAMAGUCHI,
N. SAWAKI, J. YOO, S. M. LEE, AND M. KOIKE 29-32 IMPROVEMENT OF SURFACE
LIGHT EXTRACTION FROM FLIP-CHIP GAN-BASED LED BY EMBOSSING OF THERMOSET-
TING POLYMERS KUI BAO, BEI ZHANG, ZHIMIN WANG, TAO DAI, XIANGNING KANG,
ZHIZHONG CHEN, KE XU, HANG JI, YONG CHEN, AND ZIZHAO GAN 33-36 ANALYSIS
OF THE RELATION BETWEEN LEAKAGE CURRENT AND DISLOCATIONS IN GAN-BASED
LIGHT-EMITTING DEVICES S. W. LEE, D. C. OH, H. GOTO, J. S. HA, H. J.
LEE, T. HANADA, M. W. CHO, S. K. HONG, H. Y. LEE, S. R. CHO, J. W. CHOI,
J. H. CHOI, J. H. JANG, J. E. SHIN, J. S. LEE, AND T. YAO. . . . 37-40
BLUE LIGHT EMITTING DIODES ON SI(001) GROWN BY MOVPE F. SCHULZE, A.
DADGAR, F. BERTRAM, J. BLAESING, A. DIEZ, P. VEIT, R. CLOS, J. CHRISTEN,
ANDA. KROST 41-44 4 CONTENTS CURRENT SPREADING AND THERMAL EFFECTS IN
BLUE LED DICE K. A. BULASHEVICH, I. YU. EVSTRATOV, V. F. MYRNRIN, AND S.
YU. KARPOV 45-48 EFFICIENCY ENHANCEMENT OF 400 NM VIOLET LEDS UTILIZING
ISLAND-LIKE GAN THICK FILM BY HVPE TECHNOLOGY JENQ-DAR TSAY, PO CHUN
LIU, YIH-DER GUO, JING-MEI WANG, WEN-YUEH LIU, SHYI-MING PAN, LIANG-WEN
WU, AND MICHAEL HEUKEN 49-52 FABRICATION OF GAN-BASED ELECTROLUMMESCENT
DEVICES ON AI SUBSTRATES AND THEIR APPLICATION TO RED, GREEN AND BLUE
PIXELS FOR FLAT-PANEL DISPLAYS KOICHI SUGIMOTO, SHINICHI EGAWA,
MASATOSHI ARAI, AND TOHRU HONDA 53-56 MONOLITHIC WHITE LIGHT EMITTING
DIODES WITH A BROAD EMISSION SPECTRUM A. DUSSAIGNE, J. BRAULT, B.
DAMILANO, AND J. MASSIES 57-60 GAN-BASED SCHOTTKY-TYPE UV LIGHT-EMITTING
DIODES AND THEIR INTEGRATION FOR FLAT-PANEL DISPLAYS TOSHIAKI KOBAYASHI,
SHINICHI EGAWA, MASARU SAWADA, AND TOHRU HONDA 61-64 SOL-GEL BASED YAG:
CE 3+ POWDERS FOR APPLICATIONS IN LED DEVICES A. POTDEVIN, G. CHADEYRON,
D. BOYER, AND R. MAHIOU 65-69 LASER DIODES NEGATIVE CHARACTERISTIC
TEMPERATURE OF INGAN BLUE MULTIPLE-QUANTUM-WELL LASER DIODES H. Y. RYU,
K. H. HA, S. N. LEE, T. JANG, H. K. KIM, J. K. SON, J. H. CHAE, K. S.
KIM, K. K. CHOI, H. S. PAEK, Y. J. SUNG, T. SAKONG, O. H. NAM, AND Y. J.
PARK 70-73 HOMOEPITAXIAL LASER DIODES EMITTING AT 390 NM AND THE
INFLUENCE OF SUBSTRATE QUALITY STEPHAN FIGGE, JENS DENNEMARCK, AND
DETLEF HOMMEL 74-77 DEEP RIDGE GAN CW-LASER DIODES J. DENNEMARCK, C.
TESSAREK, S. FIGGE, AND D. HOMMEL 78-81 OPTICAL GAIN AND SATURATION
BEHAVIOR IN HOMOEPITAXIALLY GROWN INGAN/GAN/AIGAN LASER STRUCTURES T.
SWIETLIK, P. PERLIN, T. SUSKI, M. LESZCZYNSKI, R. CZERNECKI, I.
GRZEGORY, AND S. POROWSKI 82-85 PHOTO DETECTORS AND NOVEL DEVICES
M-PLANE GAN-BASED DICHROIC PHOTODETECTORS C. RIVERA, P. MISRA, J. L.
PAU, E. MUFIOZ, O. BRANDT, H T. GRAHN, AND K. H. PLOOG 86-89 FABRICATION
AND OPTICAL CHARACTERIZATION OF III-NITRIDE AIR-BRIDGE PHOTONIC CRYSTAL
WITH GAN QUANTUM DOTS NING LI, M. ARITA, S. KAKO, M. KITAMURA, S.
IWAMOTO, AND Y. ARAKAWA 90-94 PHOTONIC CRYSTALS COMPRISING SELECTIVELY
GROWN FLAT-TOPPED AND SHARP-TIPPED GAN PYRAMIDS D. COQUILLAT, M. LE
VASSOR D'YERVILLE, S. A. BOUBANGA TOMBET, C. LIU, K. BEJTKA, I. M.
WATSON, P. R EDWARDS, R. W. MARTIN, H. M. H. CHONG, AND R. M. DE LA RUE
95-99 SPATIAL MAPPING ON SURFACE LIGHT EXTRACTION FROM 2D PHOTONIC
QUASICRYSTALS PATTERNED GAN-BASED LIGHT EMITTERS ZHENSHENG ZHANG, BEI
ZHANG, TAO DAI, KUI BAO, DAN LIU, XIAO WANG, XIANGNING KANG, JUN XU,
DAPENG YU, AND XING ZHU 100-103 PHOTONIC CIRCUITS WRITING WITH UV PULSED
LASER K. R. KRIBICH, S. GATTI, J. JABBOUR, G. PILLE, S. CALAS, T.
MAZINGUE, P. ETIENNE, R. LEGROS, ANDY. MOREAU 104-107 CONTENTS 5 STRENG
COUPLING IN BULK GAN MICROCAVITIES GROWN ON SILICON F. REVERET, I. R.
SEILERS, P. DISSEIX, J. LEYMARIE, A. VASSON, F. SEMOND, M. LEROUX, ANDJ.
MASSIES 108-111 GROWTH AND CHARACTERIZATION GROWTH BEHAVIOR AND OPTICAL
PROPERTIES OF IN-RICH INGAN QUANTUM DOTS BY METAL-ORGANIC CHEMICAL VAPOR
DEPOSITION HEE JIN KIM, SOON-YONG KWON, HYUN JIN KIM, HYUNSEOK NA, YOORI
SHIN, KEON-HUN LEE, HO-SANG KWAK, YONG HOON CHO, JUNG WON YOON, HYEONSIK
CHEONG, AND EUIJOONYOON . . . 112-115 GROWTH OF THICK GAN LAYERS ON
C-PLANE SAPPHIRE SUBSTRATES USING STRESS ABSORBING LAYER (SAL) H. GOTO,
S. W. LEE, J. KINOMOTO, S. T. KIM, H. C. KO, M. W. CHO, AND T. YAO
116-119 IMPROVED A1N BUFFER LAYER TECHNOLOGIES FOR UV-LEDS F. RANALLI,
P. J. PARBROOK, T. WANG, J. BAI, K. B. LEE, R. J. AIREY, G. HILL, A.
TAHRAOUI, AND A. G. CULLIS 120-124 GROWTH OF INGAN LAYER ON GAN
TEMPLATED A1 2 0 3 (0001) AND SI(L 11) SUBSTRATES BY MIXED-SOURCE HVPE
S. L. HWANG, K. S. JANG, K. H. KIM, H. S. JEON, H. S. AHN, M. YANG, S.
W. KIM, Y. HONDA, M. YAMAGUCHI, N. SAWAKI, J. YOO, S. M. LEE, AND M.
KOIKE 125-128 GAN PROPERTY EVOLUTION AT ALL STAGES OF MOVPE SI/N
TREATMENT GROWTH I. HALIDOU, Z. BENZARTI, H. FITOURI, W. FATHALLAH, AND
B. EL JANI 129-132 CHARACTERIZATION OF ALGAN, TE-DOPED GAN AND MG-DOPED
GAN GROWN BY HYDRIDE VAPOR PHASE EPITAXY K. S. JANG, K. H. KIM, S. L.
HWANG, H. S. JEON, H. S. AHN, M. YANG, W. J. CHOI, S. W. KIM, Y. HONDA,
M. YAMAGUCHI, N. SAWAKI, J. YOO, S. M. LEE, AND M. KOIKE 133-136 HIGH
INDIUM CONTENT ALINGAN FILMS: GROWTH, STRUCTURE AND OPTOELECTRONIC
PROPERTIES M. NEMOZ, E. BERAUDO, P. DE MIERRY, P. VENNEGUES, AND L.
HIRSCH 137-140 SURFACE MODIFICATIONS AND OPTICAL PROPERTIES OF BLUE
INGAN SINGLE QUANTUM WELL BY IN-SITU THERMAL TREATMENTS SUNG-NAM LEE, H.
S. PAEK, J. K. SON, T. SAKONG, Y. N. KWON, O. H. NAM, AND Y. PARK . . .
. 141-144 ANALYSIS OF GAN DECOMPOSITION IN AN ATMOSPHERIC MOVPE VERTICAL
REACTOR W. FATHALLAH, T. BOUFADEN, AND B. EL JANI 145-149 INITIAL GROWTH
STAGES OF MOVPE INN STUDIED BY AFM AND SPECULAR REFLECTIVITY A. VAN DER
LEE, F. SALAH, B. HARZALLAH, S. RUFFENACH, AND O. BRIOT 150-153 GROWTH
KINETICS AND PROPERTIES OF ZNO/ZNMGO HETERO-STRUCTURES GROWN BY
RADICAL-SOURCE MOLECULAR BEAM EPITAXY S. V IVANOV, A. EL-SHAER, T. V.
SHUBINA, S. B. LISTOSHIN, A. BAKIN, AND A. WAAG 154-157 ZNMGO-ZNO
QUANTUM WELLS EMBEDDED IN ZNO NANOPILLARS: TOWARDS REALISATION OF
NANO-LEDS A. BAKIN, A. EL-SHAER, A. C. MOFOR, M. AL-SULEIMAN, E.
SCHLENKER, AND A. WAAG 158-161 ZNO FILMS FABRICATED BY SPIN COATING AND
THEIR APPLICATION TO UV ELECTROLUMINESCENT DEVICES K. YOSHIOKA, S.
EGAWA, T. KOBAYASHI, T. BABA, K. SUGIMOTO, M. ARAI, H. NOMURA, M. SATO,
AND T.HONDA 162-165 MATERIALS CHARACTERIZATION CATHODOLUMINESCENCE STUDY
OF INGAN MQW LASER DIODES USING LASER LIFT-OFF TECHNIQUE RUI LI, WEIHUA
CHEN, XIANGNING KANG, KE XU, JUN XU, ZHIJIAN YANG, RUIJUAN NIE, TONGJUN
YU, ZHIZHONG CHEN, ZHIXIN QIN, GUOYI ZHANG, ZIZHAO GAN, AND XIAODONG HU
. . . . 166-169 6 CONTENTS PHONONS IN STRAINED ALGAN/GAN SUPERLATTICES
V. DARAKCHIEVA, B. MONEMAR, T. PASKOVA, S. EINFELDT, D. HOMMEL, AND S.
LOURDUDOSS . . . . 170-174 FAST TIME BEHAVIOR OF THE POLARIZATION
FILTERING IN ANISOTROPICALLY STRAINED M-PLANE GAN FILMS T. FLISSIKOWSKI,
P. MISRA, O. BRANDT, AND H. T. GRAHN 175-178 TEMPERATURE- AND EXCITATION
DENSITY DEPENDENCY OF PHOTOLUMINESCENCE SPECTRA IN
INGAN/GAN-HETEROSTRUCTURES C. VIERHEILIG, H. BRAUN, U. T. SCHWARZ, W.
WEGSCHEIDER, E. BAUR, U. STRAUSS, AND V. HAERLE . . 179-182 RADIATIVE
LIFETIME IN WURTZITE GAN/ALN QUANTUM DOTS R. BARDOUX, T. BRETAGNON, T.
GUILLET, P. LEFEBVRE, T. TALIERCIO, P. VALVIN, B. GIL, N. GRANDJEAN, B.
DAMILANO, A. DUSSAIGNE, AND J. MASSIES 183-186 A COMPARATIVE STUDY OF
THE INTERNAL QUANTUM EFFICIENCY FOR THE GREEN MQWS GROWN ON SAPPHIRE AND
FS-GAN SUBSTRATES YONG-HEE JEONG, HAE-YONG LEE, JAE-YOUNG PARK, JONG-PIL
JEONG, CHANG-HEE HONG, AND EUN-KYUNG SUH 187-191 INVESTIGATION OF
INTERNAL FIELD EFFECT AND BLUE-SHIFT IN INGAN-BASED BLUE LASER DIODES BY
TIME-RESOLVED OPTICAL TECHNIQUE J. K. SON, T. SAKONG, J. S. HWANG, S. N.
LEE, H. S. PAEK, H. Y. RYU, K. H. HA, Y. H. CHO, O. NAM, AND Y. PARK
192-195 FOCUSED ION BEAM ETCHED NITRIDE/AIR DBRS AS CAVITY MIRROR FACETS
OF VIOLET INGAN/GAN MULTIPLE- QUANTUM WELL LASER DIODES TAO DAI, BEI
ZHANG, ZHENSHENG ZHANG, JUN XU, WEIHUA CHEN, RUI LI, KUI BAO, QIYUAN
WEI, KE XU, XIAODONG HU, ZHIJIAN YANG, XIANGNING KANG, YAOBO PAN, MIN
LU, GUOYI ZHANG, ANDZIZHAOGAN 196-199 DRY ETCHING OF N-FACE GAN USING
TWO HIGH-DENSITY PLASMA ETCH TECHNIQUES F. RIZZI, K. BEJTKA, F. SEMOND,
E. GU, M. D. DAWSON, I. M. WATSON, AND R. W. MARTIN . . . . 200-203
ELASTIC CONSTANTS OF ALUMINUM NITRIDE M. KAZAN, E. MOUSSAED, R. NADER,
AND P. MASRI 204-207 EFFECTS OF LATTICE-MISMATCH INDUCED BUILT-IN STRAIN
ON THE VALENCE BAND PROPERTIES OF WURTZITE ZNO/ZNI ^MG^O QUANTUM WELL
HETEROSTRUCTURES K. ZITOUNI AND A. KADRI 208-211 ON THE USE OF THE
THERMAL STEP METHOD AS A TOOL FOR STUDY OF SPACE CHARGE IN SEMICONDUCTOR
GALLIUM NITRIDE: GAN M. S. BERGAOUI, A. MATOUSSI, N. CHAABANE, S.
GUERMAZI, A. TOUREILLE, AND B. EL JANI 212-215 FURTHER PAPERS OF
CONFERENCE ISBLLED 2006 ARE PUBLISHED IN PHYSICA STATUS SOLIDI (A) 204,
NO. 1 (2007). PHYSICA STATUS SOLIDI (C) IS INDEXED IN CAMBRIDGE
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| spelling | International Symposium on Blue Lasers and Light Emitting Diodes 6 2006 Montpellier Verfasser (DE-588)6514399-1 aut Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France, 15 - 19 May 2006 guest ed.: Thierry Bretagnon ... Weinheim Wiley-VCH 2007 215 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Physica status solidi : C, Current topics in solid state physics 4,1 Einzelaufnahme eines Zs.-Heftes Laserdiode (DE-588)4195920-6 gnd rswk-swf Blaulicht (DE-588)4145867-9 gnd rswk-swf Lumineszenzdiode (DE-588)4125154-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Lumineszenzdiode (DE-588)4125154-4 s Laserdiode (DE-588)4195920-6 s Blaulicht (DE-588)4145867-9 s DE-604 Bretagnon, Thierry Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016499292&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France, 15 - 19 May 2006 Laserdiode (DE-588)4195920-6 gnd Blaulicht (DE-588)4145867-9 gnd Lumineszenzdiode (DE-588)4125154-4 gnd |
| subject_GND | (DE-588)4195920-6 (DE-588)4145867-9 (DE-588)4125154-4 (DE-588)1071861417 |
| title | Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France, 15 - 19 May 2006 |
| title_auth | Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France, 15 - 19 May 2006 |
| title_exact_search | Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France, 15 - 19 May 2006 |
| title_exact_search_txtP | Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France, 15 - 19 May 2006 |
| title_full | Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France, 15 - 19 May 2006 guest ed.: Thierry Bretagnon ... |
| title_fullStr | Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France, 15 - 19 May 2006 guest ed.: Thierry Bretagnon ... |
| title_full_unstemmed | Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France, 15 - 19 May 2006 guest ed.: Thierry Bretagnon ... |
| title_short | Papers presented at the 6th International Symposium on Blue Laser and Light Emitting Diodes, Montpellier, France, 15 - 19 May 2006 |
| title_sort | papers presented at the 6th international symposium on blue laser and light emitting diodes montpellier france 15 19 may 2006 |
| topic | Laserdiode (DE-588)4195920-6 gnd Blaulicht (DE-588)4145867-9 gnd Lumineszenzdiode (DE-588)4125154-4 gnd |
| topic_facet | Laserdiode Blaulicht Lumineszenzdiode Konferenzschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016499292&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT internationalsymposiumonbluelasersandlightemittingdiodesmontpellier paperspresentedatthe6thinternationalsymposiumonbluelaserandlightemittingdiodesmontpellierfrance1519may2006 AT bretagnonthierry paperspresentedatthe6thinternationalsymposiumonbluelaserandlightemittingdiodesmontpellierfrance1519may2006 |