Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
2008
|
| Schlagworte: | |
| Beschreibung: | Regensburg, Univ., Diplomarb., 2008 |
| Beschreibung: | 67 Bl. Ill., graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV023165753 | ||
| 003 | DE-604 | ||
| 005 | 20080225 | ||
| 007 | t | ||
| 008 | 080215s2008 ad|| m||| 00||| ger d | ||
| 035 | |a (OCoLC)634835089 | ||
| 035 | |a (DE-599)BVBBV023165753 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a ger | |
| 049 | |a DE-355 | ||
| 084 | |a UD 6100 |0 (DE-625)145538: |2 rvk | ||
| 100 | 1 | |a Plohmann, Daniel |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs |c von Daniel Plohmann |
| 264 | 1 | |c 2008 | |
| 300 | |a 67 Bl. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Regensburg, Univ., Diplomarb., 2008 | ||
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Terahertzbereich |0 (DE-588)4346673-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Becquerel-Fotoeffekt |0 (DE-588)4253006-4 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | 1 | |a Becquerel-Fotoeffekt |0 (DE-588)4253006-4 |D s |
| 689 | 0 | 2 | |a Terahertzbereich |0 (DE-588)4346673-4 |D s |
| 689 | 0 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-016333918 | ||
Datensatz im Suchindex
| _version_ | 1804137405487251456 |
|---|---|
| adam_txt | |
| any_adam_object | |
| any_adam_object_boolean | |
| author | Plohmann, Daniel |
| author_facet | Plohmann, Daniel |
| author_role | aut |
| author_sort | Plohmann, Daniel |
| author_variant | d p dp |
| building | Verbundindex |
| bvnumber | BV023165753 |
| classification_rvk | UD 6100 |
| ctrlnum | (OCoLC)634835089 (DE-599)BVBBV023165753 |
| discipline | Physik |
| discipline_str_mv | Physik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01227nam a2200361 c 4500</leader><controlfield tag="001">BV023165753</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20080225 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">080215s2008 ad|| m||| 00||| ger d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)634835089</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV023165753</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-355</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UD 6100</subfield><subfield code="0">(DE-625)145538:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Plohmann, Daniel</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs</subfield><subfield code="c">von Daniel Plohmann</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">67 Bl.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Regensburg, Univ., Diplomarb., 2008</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Terahertzbereich</subfield><subfield code="0">(DE-588)4346673-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Becquerel-Fotoeffekt</subfield><subfield code="0">(DE-588)4253006-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Becquerel-Fotoeffekt</subfield><subfield code="0">(DE-588)4253006-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Terahertzbereich</subfield><subfield code="0">(DE-588)4346673-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-016333918</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV023165753 |
| illustrated | Illustrated |
| index_date | 2024-07-02T19:55:31Z |
| indexdate | 2024-07-09T21:11:46Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016333918 |
| oclc_num | 634835089 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR |
| owner_facet | DE-355 DE-BY-UBR |
| physical | 67 Bl. Ill., graph. Darst. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| record_format | marc |
| spelling | Plohmann, Daniel Verfasser aut Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs von Daniel Plohmann 2008 67 Bl. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Regensburg, Univ., Diplomarb., 2008 MOS-FET (DE-588)4207266-9 gnd rswk-swf Terahertzbereich (DE-588)4346673-4 gnd rswk-swf Becquerel-Fotoeffekt (DE-588)4253006-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content MOS-FET (DE-588)4207266-9 s Becquerel-Fotoeffekt (DE-588)4253006-4 s Terahertzbereich (DE-588)4346673-4 s DE-604 |
| spellingShingle | Plohmann, Daniel Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs MOS-FET (DE-588)4207266-9 gnd Terahertzbereich (DE-588)4346673-4 gnd Becquerel-Fotoeffekt (DE-588)4253006-4 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4346673-4 (DE-588)4253006-4 (DE-588)4113937-9 |
| title | Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs |
| title_auth | Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs |
| title_exact_search | Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs |
| title_exact_search_txtP | Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs |
| title_full | Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs von Daniel Plohmann |
| title_fullStr | Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs von Daniel Plohmann |
| title_full_unstemmed | Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs von Daniel Plohmann |
| title_short | Terahertzstrahlungsinduzierte photogalvanische Effekte in Silizium MOSFETs |
| title_sort | terahertzstrahlungsinduzierte photogalvanische effekte in silizium mosfets |
| topic | MOS-FET (DE-588)4207266-9 gnd Terahertzbereich (DE-588)4346673-4 gnd Becquerel-Fotoeffekt (DE-588)4253006-4 gnd |
| topic_facet | MOS-FET Terahertzbereich Becquerel-Fotoeffekt Hochschulschrift |
| work_keys_str_mv | AT plohmanndaniel terahertzstrahlungsinduziertephotogalvanischeeffekteinsiliziummosfets |