Fundamental principles of optical lithography: the science of microfabrication
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| Format: | Book |
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| Language: | English |
| Published: |
Chichester [u.a.]
Wiley
2007
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| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XVII, 515 S. Ill., graph. Darst. |
| ISBN: | 9780470727300 0470018933 9780470018934 |
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| 245 | 1 | 0 | |a Fundamental principles of optical lithography |b the science of microfabrication |c Chris Mack |
| 264 | 1 | |a Chichester [u.a.] |b Wiley |c 2007 | |
| 300 | |a XVII, 515 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 4 | |a Circuits intégrés - Conception et construction | |
| 650 | 4 | |a Microlithographie - Applications industrielles | |
| 650 | 4 | |a Integrated circuits |x Design and construction | |
| 650 | 4 | |a Microlithography |x Industrial applications | |
| 650 | 0 | 7 | |a Fotolithografie |g Halbleitertechnologie |0 (DE-588)4174516-4 |2 gnd |9 rswk-swf |
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| _version_ | 1804137345137508352 |
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| adam_text | FUNDAMENTAL PRINCIPLES OF OPTICAL LITHOGRAPHY: THE SCIENCE OF
MICROFABRICATION CHRIS MACK WWW. LITHOGURU. COM 3ICENTENNIAL
3ICENTENNIAL JOHN WILEY & SONS, LTD CONTENTS PREFACE XV 1. INTRODUCTION
TO SEMICONDUCTOR LITHOGRAPHY 1 2 2 3 5 6 7 12 14 15 18 19 23 24 25 25 25
26 26 AERIAL IMAGE FORMATION - THE BASICS 29 2.1 MATHEMATICAL
DESCRIPTION OF LIGHT 29 2.1.1 MAXWELL S EQUATIONS AND THE WAVE EQUATION
30 2.1.2 GENERAL HARMONIE FIELDS AND THE PLANE WAVE IN A NONABSORBING
MEDIUM 32 2.1.3 PHASORS AND WAVE PROPAGATION IN AN ABSORBING MEDIUM 33
2.1.4 INTENSITY AND THE POYNTING VECTOR 36 2.1.5 INTENSITY AND ABSORBED
ELECTROMAGNETIC ENERGY 37 1.1 1.2 1.3 BASICS OF IC FABRICATION 1.1.1
1.1.2 1.1.3 1.1.4 MOORE : LITHOG] 1.3.1 1.3.2 1.3.3 1.3.4 1.3.5 1.3.6
1.3.7 1.3.8 1.3.9 1.3.10 PROBLEMS PATTERNING ETCHING ION IMPLANTATION
PROCESS INTEGRATION S LAW AND THE SEMICONDUCTOR INDUSTRY APHY
PROCESSING SUBSTRATE PREPARATION PHOTORESIST COATING POST-APPLY BAKE
ALIGNMENT AND EXPOSURE POST-EXPOSURE BAKE DEVELOPMENT POSTBAKE MEASURE
AND INSPECT PATTERN TRANSFER STRIP VIII CONTENTS 2.2 BASIC IMAGING
THEORY 38 2.2.1 DIFFRACTION 39 2.2.2 FOURIER TRANSFORM PAIRS 43 2.2.3
IMAGING LENS 45 2.2.4 FORMING AN IMAGE 47 2.2.5 IMAGING EXAMPLE: DENSE
ARRAY OF LINES AND SPACES 48 2.2.6 IMAGING EXAMPLE: ISOLATED SPACE 50
2.2.7 THE POINT SPREAD FUNCTION 51 2.2.8 REDUCTION IMAGING 53 2.3
PARTIAL COHERENCE 56 2.3.1 OBLIQUE ILLUMINATION 57 2.3.2 PARTIALLY
COHERENT ILLUMINATION 58 2.3.3 HOPKINS APPROACH TO PARTIAL COHERENCE 62
2.3.4 SUM OF COHERENT SOURCES APPROACH 63 2.3.5 OFF-AXIS ILLUMINATION 65
2.3.6 IMAGING EXAMPLE: DENSE ARRAY OF LINES AND SPACES UNDER ANNULAR
ILLUMINATION 66 2.3.7 KOEHLER ILLUMINATION 66 2.3.8 INCOHERENT
ILLUMINATION 69 2.4 SOME IMAGING EXAMPLES 70 PROBLEMS 71 AERIAL IMAGE
FORMATION - THE DETAILS 75 3.1 ABERRATIONS 75 3.1.1 THE CAUSES OF
ABERRATIONS 75 3.1.2 DESCRIBING ABERRATIONS: THE ZERNIKE POLYNOMIAL 78
3.1.3 ABERRATION EXAMPLE - TUT 81 3.1.4 ABERRATION EXAMPLE - DEFOCUS,
SPHERICAL AND ASTIGMATISM 83 3.1.5 ABERRATION EXAMPLE - COMA 84 3.1.6
CHROMATIC ABERRATIONS 85 3.1.7 STREHL RATIO 90 3.2 PUPIL FILTERS AND
LENS APODIZATION 90 3.3 FLARE 91 3.3.1 MEASURING FLARE 92 3.3.2 MODELING
FLARE 94 3.4 DEFOCUS 95 3.4.1 DEFOCUS AS AN ABERRATION 95 3.4.2 DEFOCUS
EXAMPLE: DENSE LINES AND SPACES AND THREE-BEAM IMAGING 98 3.4.3 DEFOCUS
EXAMPLE: DENSE LINES AND SPACES AND TWO-BEAM IMAGING 100 3.4.4 IMAGE
ISOFOCAL POINT 102 3.4.5 FOCUS AVERAGING 103 3.4.6 RETICLE DEFOCUS 104
3.4.7 RAYLEIGH DEPTH OF FOCUS 105 CONTENTS IX 3.5 IMAGING WITH SCANNERS
VERSUS STEPPERS 106 3.6 VECTOR NATURE OF LIGHT 108 3.6.1 DESCRIBING
POLARIZATION 111 3.6.2 POLARIZATION EXAMPLE: TE VERSUS TM IMAGE OF LINES
AND SPACES 113 3.6.3 POLARIZATION EXAMPLE: THE VECTOR PSF 114 3.6.4
POLARIZATION ABERRATIONS AND THE JONES PUPIL 114 3.7 IMMERSION
LITHOGRAPHY 117 3.7.1 THE OPTICAL INVARIANT AND HYPER-NA LITHOGRAPHY 118
3.7.2 IMMERSION LITHOGRAPHY AND THE DEPTH OF FOCUS 120 3.8 IMAGE QUALITY
121 3.8.1 IMAGE CD 121 3.8.2 IMAGE PLACEMENT ERROR (DISTORTION) 123
3.8.3 NORMALIZED IMAGE LOG-SLOPE (NILS) 123 3.8.4 FOCUS DEPENDENCE OF
IMAGE QUALITY 125 PROBLEMS 126 IMAGING IN RESIST: STANDING WAVES AND
SWING CURVES 129 4.1 STANDING WAVES 130 4.1.1 THE NATURE OF STANDING
WAVES 130 4.1.2 STANDING WAVES FOR NORMALLY INCIDENT LIGHT IN A SINGLE
FILM 131 4.1.3 STANDING WAVES IN A MULTIPLE-LAYER FILM STACK 135 4.1.4
OBLIQUE INCIDENCE AND THE VECTOR NATURE OF LIGHT 137 4.1.5 BROADBAND
ILLUMINATION 141 4.2 SWING CURVES 144 4.2.1 REFLECTIVITY SWING CURVE 144
4.2.2 DOSE-TO-CLEAR AND CD SWING CURVES 148 4.2.3 SWING CURVES FOR
PARTIALLY COHERENT ILLUMINATION 149 4.2.4 SWING RATIO 151 4.2.5
EFFECTIVE ABSORPTION 154 4.3 BOTTOM ANTIREFLECTION COATINGS 156 4.3.1
BARC ON AN ABSORBING SUBSTRATE 157 4.3.2 BARCS AT HIGH NUMERICAL
APERTURES 160 4.3.3 BARC ON A TRANSPARENT SUBSTRATE 164 4.3.4 BARC
PERFORMANCE 165 4.4 TOP ANTIREFLECTION COATINGS 167 4.5 CONTRAST
ENHANCEMENT LAYER 170 4.6 IMPACT OF THE PHASE OF THE SUBSTRATE
REFLECTANCE 170 4.7 IMAGING IN RESIST 173 4.7.1 IMAGE IN RESIST CONTRAST
173 4.7.2 CALCULATING THE IMAGE IN RESIST 177 4.7.3 RESIST-INDUCED
SPHERICAL ABERRATIONS 179 4.7.4 STANDING WAVE AMPLITUDE RATIO 181 4.8
DEFIMNG INTENSITY 183 4.8.1 INTENSITY AT OBLIQUE INCIDENCE 183 4.8.2
REFRACTION INTO AN ABSORBING MATERIAL 184 4.8.3 INTENSITY AND ABSORBED
ENERGY 187 PROBLEMS 188 CONVENTIONAL RESISTS: EXPOSURE AND BAKE
CHEMISTRY 191 5.1 EXPOSURE 191 5.1.1 ABSORPTION 191 5.1.2 EXPOSURE
KINETICS 194 5.2 POST-APPLY BAKE 199 5.2.1 SENSITIZER DECOMPOSITION 200
5.2.2 SOLVENT DIFFUSION AND EVAPORATION 205 5.2.3 SOLVENT EFFECTS IN
LITHOGRAPHY 209 5.3 POST-EXPOSURE BAKE DIFFUSION 210 5.4 DETAILED BAKE
TEMPERATURE BEHAVIOR 214 5.5 MEASURING THE ABC PARAMETERS 217 PROBLEMS
219 CHEMICALLY AMPLIFIED RESISTS: EXPOSURE AND BAKE CHEMISTRY 223 6.1
EXPOSURE REACTION 223 6.2 CHEMICAL AMPLIFICATION 224 6.2.1 AMPLIFICATION
REACTION 225 6.2.2 DIFFUSION 227 6.2.3 ACID LOSS 230 6.2.4 BASE QUENCHER
232 6.2.5 REACTION-DIFFUSION SYSTEMS 233 6.3 MEASURING CHEMICALLY
AMPLIFIED RESIST PARAMETERS 235 6.4 STOCHASTIC MODELING OF RESIST
CHEMISTRY 237 6.4.1 PHOTON SHOT NOISE 237 6.4.2 CHEMICAL CONCENTRATION
239 6.4.3 SOME MATHEMATICS OF BINARY RANDOM VARIABLES 241 6.4.4 PHOTON
ABSORPTION AND EXPOSURE 242 6.4.5 ACID DIFFUSION, CONVENTIONAL RESIST
246 6.4.6 ACID-CATALYZED REACTION-DIFFUSION 247 6.4.7 REACTION-DIFFUSION
AND POLYMER DEBLOCKING 251 6.4.8 ACID-BASE QUENCHING 253 PROBLEMS 254
PHOTORESIST DEVELOPMENT 257 7.1 KINETICS OF DEVELOPMENT 257 7.1.1 A
SIMPLE KINETIC DEVELOPMENT MODEL 258 7.1.2 OTHER DEVELOPMENT MODELS 261
7.1.3 MOLECULAR WEIGHT DISTRIBUTIONS AND THE CRITICAL IONIZATION MODEL
264 7.1.4 SURFACE INHIBITION 265 CONTENTS XI 7.1.5 EXTENSION TO NEGATIVE
RESISTS 267 7.1.6 DEVELOPER TEMPERATURE 267 7.1.7 DEVELOPER NORMALITY
268 7.2 THE DEVELOPMENT CONTRAST 270 7.2.1 DEFINING PHOTORESIST CONTRAST
270 7.2.2 COMPARING DEFINITIONS OF CONTRAST 274 7.2.3 THE PRACTICAL
CONTRAST 276 7.2.4 RELATIONSHIP BETWEEN YAND R M JRR^ N 277 7.3 THE
DEVELOPMENT PATH 278 7.3.1 THE EULER-LAGRANGE EQUATION 279 7.3.2 THE
CASE OF NO Z-DEPENDENCE 280 7.3.3 THE CASE OF A SEPARABLE DEVELOPMENT
RATE FUNCTION 282 7.3.4 RESIST SIDEWALL ANGLE 283 7.3.5 THE CASE OF
CONSTANT DEVELOPMENT GRADIENTS 284 7.3.6 SEGMENTED DEVELOPMENT AND THE
LUMPED PARAMETER MODEL (LPM) 286 7.3.7 LPM EXAMPLE - GAUSSIAN IMAGE 287
7.4 MEASURING DEVELOPMENT RATES 292 PROBLEMS 293 8. LITHOGRAPHIE CONTROL
IN SEMICONDUCTOR MANUFACTURING 297 8.1 DEFINING LITHOGRAPHIE QUALITY 297
8.2 CRITICAL DIMENSION CONTROL 299 8.2.1 IMPACT OF CD CONTROL 299 8.2.2
IMPROVING CD CONTROL 303 8.2.3 SOURCES OF FOCUS AND DOSE ERRORS 305
8.2.4 DEFINING CRITICAL DIMENSION 307 8.3 HOW TO CHARACTERIZE CRITICAL
DIMENSION VARIATIONS 309 8.3.1 SPATIAL VARIATIONS 309 8.3.2 TEMPORAL
VARIATIONS AND RANDOM VARIATIONS 311 8.3.3 CHARACTERIZING AND SEPARATING
SOURCES OF CD VARIATIONS 312 8.4 OVERLAY CONTROL 314 8.4.1 MEASURING AND
EXPRESSING OVERLAY 315 8.4.2 ANALYSIS AND MODELING OF OVERLAY DATA 317
8.4.3 IMPROVING OVERLAY DATA ANALYSIS 320 8.4.4 USING OVERLAY DATA 323
8.4.5 OVERLAY VERSUS PATTERN PLACEMENT ERROR 326 8.5 THE PROCESS WINDOW
326 8.5.1 THE FOCUS-EXPOSURE MATRIX 326 8.5.2 DEFINING THE PROCESS
WINDOW AND DOF 332 8.5.3 THE ISOFOCAL POINT 336 8.5.4 OVERLAPPING
PROCESS WINDOWS 338 8.5.5 DOSE AND FOCUS CONTROL 339 8.6 H-V BIAS 343
8.6.1 ASTIGMATISM AND H-V BIAS 343 8.6.2 SOURCE SHAPE ASYMMETRY 345
CONTENTS 8.8 8.9 8.10 8.7.1 8.7.2 8.7.3 8.7.4 8.7.5 8.7.6 LINEARITY
DEFINING MEEF AERIAL IMAGE MEEF CONTACT HOLE MEEF MASK ERRORS AS
EFFECTIVE DOSE ERRORS RESIST IMPACT ON MEEF LINE-END SHORTENING 8.8.1
8.8.2 CRITICAL PATTERN MEASURING LES CHARACTERIZING LES PROCESS EFFECTS
SHAPE AND EDGE PLACEMENT ERRORS COLLAPSE .7 MASK ERROR ENHANCEMENT
FACTOR (MEEF) 348 348 349 350 352 353 355 356 357 359 361 362 366
GRADIENT-BASED LITHOGRAPHIE OPTIMIZATION: USING THE NORMALIZED IMAGE
LOG-SLOPE 369 9.1 LITHOGRAPHY AS INFORMATION TRANSFER 369 9.2 AERIAL
IMAGE 370 9.3 IMAGE IN RESIST 377 9.4 EXPOSURE 378 9.5 POST-EXPOSURE
BAKE 381 9.5.1 DIFFUSION IN CONVENTIONAL RESISTS 381 9.5.2 CHEMICALLY
AMPLIFIED RESISTS - REACTION ONLY 383 9.5.3 CHEMICALLY AMPLIFIED RESISTS
- REACTION-DIFFUSION 384 9.5.4 CHEMICALLY AMPLIFIED RESISTS -
REACTION-DIFFUSION WITH QUENCHER 391 9.6 DEVELOP 393 9.6.1 CONVENTIONAL
RESIST 397 9.6.2 CHEMICALLY AMPLIFIED RESIST 399 9.7 RESIST PROFILE
FORMATION 400 9.7.1 THE CASE OF A SEPARABLE DEVELOPMENT RATE FUNCTION
400 9.7.2 LUMPED PARAMETER MODEL 401 9.8 LINE EDGE ROUGHNESS 404 9.9
SUMMARY 406 PROBLEMS 408 RESOLUTION ENHANCEMENT TECHNOLOGIES 411 10.1
RESOLUTION 412 10.1.1 DEFINING RESOLUTION 413 10.1.2 PITCH RESOLUTION
416 10.1.3 NATURAL RESOLUTIONS 418 10.1.4 IMPROVING RESOLUTION 418 10.2
OPTICAL PROXIMITY CORRECTION (OPC) 419 10.2.1 PROXIMITY EFFECTS 419
10.2.2 PROXIMITY CORRECTION - RULE BASED 422 CONTENTS XIII 10.2.3
PROXIMITY CORRECTION - MODEL BASED 425 10.2.4 SUBRESOLUTION ASSIST
FEATURES (SRAFS) 427 10.3 OFF-AXIS ILLUMINATION (OAI) 429 10.4
PHASE-SHIFTING MASKS (PSM) 434 10.4.1 ALTERNATING PSM 435 10.4.2 PHASE
CONFLICTS 438 10.4.3 PHASE AND INTENSITY IMBALANCE 439 10.4.4 ATTENUATED
PSM 441 10.4.5 IMPACT OF PHASE ERRORS 445 10.5 NATURAL RESOLUTIONS 450
10.5.1 CONTACT HOLES AND THE POINT SPREAD FUNCTION 450 10.5.2 THE
COHERENT LINE SPREAD FUNCTION (LSF) 452 10.5.3 THE ISOLATED PHASE EDGE
453 PROBLEMS 454 APPENDIX A. GLOSSARY OF MICROLITHOGRAPHIC TERMS 457
APPENDIX B. CURL, DIVERGENCE, GRADIENT, LAPLACIAN 491 APPENDIX C. THE
DIRAC DELTA FUNCTION 495 INDEX
|
| adam_txt |
FUNDAMENTAL PRINCIPLES OF OPTICAL LITHOGRAPHY: THE SCIENCE OF
MICROFABRICATION CHRIS MACK WWW. LITHOGURU. COM 3ICENTENNIAL
3ICENTENNIAL JOHN WILEY & SONS, LTD CONTENTS PREFACE XV 1. INTRODUCTION
TO SEMICONDUCTOR LITHOGRAPHY 1 2 2 3 5 6 7 12 14 15 18 19 23 24 25 25 25
26 26 AERIAL IMAGE FORMATION - THE BASICS 29 2.1 MATHEMATICAL
DESCRIPTION OF LIGHT 29 2.1.1 MAXWELL'S EQUATIONS AND THE WAVE EQUATION
30 2.1.2 GENERAL HARMONIE FIELDS AND THE PLANE WAVE IN A NONABSORBING
MEDIUM 32 2.1.3 PHASORS AND WAVE PROPAGATION IN AN ABSORBING MEDIUM 33
2.1.4 INTENSITY AND THE POYNTING VECTOR 36 2.1.5 INTENSITY AND ABSORBED
ELECTROMAGNETIC ENERGY 37 1.1 1.2 1.3 BASICS OF IC FABRICATION 1.1.1
1.1.2 1.1.3 1.1.4 MOORE : LITHOG] 1.3.1 1.3.2 1.3.3 1.3.4 1.3.5 1.3.6
1.3.7 1.3.8 1.3.9 1.3.10 PROBLEMS PATTERNING ETCHING ION IMPLANTATION
PROCESS INTEGRATION S LAW AND THE SEMICONDUCTOR INDUSTRY "APHY
PROCESSING SUBSTRATE PREPARATION PHOTORESIST COATING POST-APPLY BAKE
ALIGNMENT AND EXPOSURE POST-EXPOSURE BAKE DEVELOPMENT POSTBAKE MEASURE
AND INSPECT PATTERN TRANSFER STRIP VIII CONTENTS 2.2 BASIC IMAGING
THEORY 38 2.2.1 DIFFRACTION 39 2.2.2 FOURIER TRANSFORM PAIRS 43 2.2.3
IMAGING LENS 45 2.2.4 FORMING AN IMAGE 47 2.2.5 IMAGING EXAMPLE: DENSE
ARRAY OF LINES AND SPACES 48 2.2.6 IMAGING EXAMPLE: ISOLATED SPACE 50
2.2.7 THE POINT SPREAD FUNCTION 51 2.2.8 REDUCTION IMAGING 53 2.3
PARTIAL COHERENCE 56 2.3.1 OBLIQUE ILLUMINATION 57 2.3.2 PARTIALLY
COHERENT ILLUMINATION 58 2.3.3 HOPKINS APPROACH TO PARTIAL COHERENCE 62
2.3.4 SUM OF COHERENT SOURCES APPROACH 63 2.3.5 OFF-AXIS ILLUMINATION 65
2.3.6 IMAGING EXAMPLE: DENSE ARRAY OF LINES AND SPACES UNDER ANNULAR
ILLUMINATION 66 2.3.7 KOEHLER ILLUMINATION 66 2.3.8 INCOHERENT
ILLUMINATION 69 2.4 SOME IMAGING EXAMPLES 70 PROBLEMS 71 AERIAL IMAGE
FORMATION - THE DETAILS 75 3.1 ABERRATIONS 75 3.1.1 THE CAUSES OF
ABERRATIONS 75 3.1.2 DESCRIBING ABERRATIONS: THE ZERNIKE POLYNOMIAL 78
3.1.3 ABERRATION EXAMPLE - TUT 81 3.1.4 ABERRATION EXAMPLE - DEFOCUS,
SPHERICAL AND ASTIGMATISM 83 3.1.5 ABERRATION EXAMPLE - COMA 84 3.1.6
CHROMATIC ABERRATIONS 85 3.1.7 STREHL RATIO 90 3.2 PUPIL FILTERS AND
LENS APODIZATION 90 3.3 FLARE 91 3.3.1 MEASURING FLARE 92 3.3.2 MODELING
FLARE 94 3.4 DEFOCUS 95 3.4.1 DEFOCUS AS AN ABERRATION 95 3.4.2 DEFOCUS
EXAMPLE: DENSE LINES AND SPACES AND THREE-BEAM IMAGING 98 3.4.3 DEFOCUS
EXAMPLE: DENSE LINES AND SPACES AND TWO-BEAM IMAGING 100 3.4.4 IMAGE
ISOFOCAL POINT 102 3.4.5 FOCUS AVERAGING 103 3.4.6 RETICLE DEFOCUS 104
3.4.7 RAYLEIGH DEPTH OF FOCUS 105 CONTENTS IX 3.5 IMAGING WITH SCANNERS
VERSUS STEPPERS 106 3.6 VECTOR NATURE OF LIGHT 108 3.6.1 DESCRIBING
POLARIZATION 111 3.6.2 POLARIZATION EXAMPLE: TE VERSUS TM IMAGE OF LINES
AND SPACES 113 3.6.3 POLARIZATION EXAMPLE: THE VECTOR PSF 114 3.6.4
POLARIZATION ABERRATIONS AND THE JONES PUPIL 114 3.7 IMMERSION
LITHOGRAPHY 117 3.7.1 THE OPTICAL INVARIANT AND HYPER-NA LITHOGRAPHY 118
3.7.2 IMMERSION LITHOGRAPHY AND THE DEPTH OF FOCUS 120 3.8 IMAGE QUALITY
121 3.8.1 IMAGE CD 121 3.8.2 IMAGE PLACEMENT ERROR (DISTORTION) 123
3.8.3 NORMALIZED IMAGE LOG-SLOPE (NILS) 123 3.8.4 FOCUS DEPENDENCE OF
IMAGE QUALITY 125 PROBLEMS 126 IMAGING IN RESIST: STANDING WAVES AND
SWING CURVES 129 4.1 STANDING WAVES 130 4.1.1 THE NATURE OF STANDING
WAVES 130 4.1.2 STANDING WAVES FOR NORMALLY INCIDENT LIGHT IN A SINGLE
FILM 131 4.1.3 STANDING WAVES IN A MULTIPLE-LAYER FILM STACK 135 4.1.4
OBLIQUE INCIDENCE AND THE VECTOR NATURE OF LIGHT 137 4.1.5 BROADBAND
ILLUMINATION 141 4.2 SWING CURVES 144 4.2.1 REFLECTIVITY SWING CURVE 144
4.2.2 DOSE-TO-CLEAR AND CD SWING CURVES 148 4.2.3 SWING CURVES FOR
PARTIALLY COHERENT ILLUMINATION 149 4.2.4 SWING RATIO 151 4.2.5
EFFECTIVE ABSORPTION 154 4.3 BOTTOM ANTIREFLECTION COATINGS 156 4.3.1
BARC ON AN ABSORBING SUBSTRATE 157 4.3.2 BARCS AT HIGH NUMERICAL
APERTURES 160 4.3.3 BARC ON A TRANSPARENT SUBSTRATE 164 4.3.4 BARC
PERFORMANCE 165 4.4 TOP ANTIREFLECTION COATINGS 167 4.5 CONTRAST
ENHANCEMENT LAYER 170 4.6 IMPACT OF THE PHASE OF THE SUBSTRATE
REFLECTANCE 170 4.7 IMAGING IN RESIST 173 4.7.1 IMAGE IN RESIST CONTRAST
173 4.7.2 CALCULATING THE IMAGE IN RESIST 177 4.7.3 RESIST-INDUCED
SPHERICAL ABERRATIONS 179 4.7.4 STANDING WAVE AMPLITUDE RATIO 181 4.8
DEFIMNG INTENSITY 183 4.8.1 INTENSITY AT OBLIQUE INCIDENCE 183 4.8.2
REFRACTION INTO AN ABSORBING MATERIAL 184 4.8.3 INTENSITY AND ABSORBED
ENERGY 187 PROBLEMS 188 CONVENTIONAL RESISTS: EXPOSURE AND BAKE
CHEMISTRY 191 5.1 EXPOSURE 191 5.1.1 ABSORPTION 191 5.1.2 EXPOSURE
KINETICS 194 5.2 POST-APPLY BAKE 199 5.2.1 SENSITIZER DECOMPOSITION 200
5.2.2 SOLVENT DIFFUSION AND EVAPORATION 205 5.2.3 SOLVENT EFFECTS IN
LITHOGRAPHY 209 5.3 POST-EXPOSURE BAKE DIFFUSION 210 5.4 DETAILED BAKE
TEMPERATURE BEHAVIOR 214 5.5 MEASURING THE ABC PARAMETERS 217 PROBLEMS
219 CHEMICALLY AMPLIFIED RESISTS: EXPOSURE AND BAKE CHEMISTRY 223 6.1
EXPOSURE REACTION 223 6.2 CHEMICAL AMPLIFICATION 224 6.2.1 AMPLIFICATION
REACTION 225 6.2.2 DIFFUSION 227 6.2.3 ACID LOSS 230 6.2.4 BASE QUENCHER
232 6.2.5 REACTION-DIFFUSION SYSTEMS 233 6.3 MEASURING CHEMICALLY
AMPLIFIED RESIST PARAMETERS 235 6.4 STOCHASTIC MODELING OF RESIST
CHEMISTRY 237 6.4.1 PHOTON SHOT NOISE 237 6.4.2 CHEMICAL CONCENTRATION
239 6.4.3 SOME MATHEMATICS OF BINARY RANDOM VARIABLES 241 6.4.4 PHOTON
ABSORPTION AND EXPOSURE 242 6.4.5 ACID DIFFUSION, CONVENTIONAL RESIST
246 6.4.6 ACID-CATALYZED REACTION-DIFFUSION 247 6.4.7 REACTION-DIFFUSION
AND POLYMER DEBLOCKING 251 6.4.8 ACID-BASE QUENCHING 253 PROBLEMS 254
PHOTORESIST DEVELOPMENT 257 7.1 KINETICS OF DEVELOPMENT 257 7.1.1 A
SIMPLE KINETIC DEVELOPMENT MODEL 258 7.1.2 OTHER DEVELOPMENT MODELS 261
7.1.3 MOLECULAR WEIGHT DISTRIBUTIONS AND THE CRITICAL IONIZATION MODEL
264 7.1.4 SURFACE INHIBITION 265 CONTENTS XI 7.1.5 EXTENSION TO NEGATIVE
RESISTS 267 7.1.6 DEVELOPER TEMPERATURE 267 7.1.7 DEVELOPER NORMALITY
268 7.2 THE DEVELOPMENT CONTRAST 270 7.2.1 DEFINING PHOTORESIST CONTRAST
270 7.2.2 COMPARING DEFINITIONS OF CONTRAST 274 7.2.3 THE PRACTICAL
CONTRAST 276 7.2.4 RELATIONSHIP BETWEEN YAND R M JRR^ N 277 7.3 THE
DEVELOPMENT PATH 278 7.3.1 THE EULER-LAGRANGE EQUATION 279 7.3.2 THE
CASE OF NO Z-DEPENDENCE 280 7.3.3 THE CASE OF A SEPARABLE DEVELOPMENT
RATE FUNCTION 282 7.3.4 RESIST SIDEWALL ANGLE 283 7.3.5 THE CASE OF
CONSTANT DEVELOPMENT GRADIENTS 284 7.3.6 SEGMENTED DEVELOPMENT AND THE
LUMPED PARAMETER MODEL (LPM) 286 7.3.7 LPM EXAMPLE - GAUSSIAN IMAGE 287
7.4 MEASURING DEVELOPMENT RATES 292 PROBLEMS 293 8. LITHOGRAPHIE CONTROL
IN SEMICONDUCTOR MANUFACTURING 297 8.1 DEFINING LITHOGRAPHIE QUALITY 297
8.2 CRITICAL DIMENSION CONTROL 299 8.2.1 IMPACT OF CD CONTROL 299 8.2.2
IMPROVING CD CONTROL 303 8.2.3 SOURCES OF FOCUS AND DOSE ERRORS 305
8.2.4 DEFINING CRITICAL DIMENSION 307 8.3 HOW TO CHARACTERIZE CRITICAL
DIMENSION VARIATIONS 309 8.3.1 SPATIAL VARIATIONS 309 8.3.2 TEMPORAL
VARIATIONS AND RANDOM VARIATIONS 311 8.3.3 CHARACTERIZING AND SEPARATING
SOURCES OF CD VARIATIONS 312 8.4 OVERLAY CONTROL 314 8.4.1 MEASURING AND
EXPRESSING OVERLAY 315 8.4.2 ANALYSIS AND MODELING OF OVERLAY DATA 317
8.4.3 IMPROVING OVERLAY DATA ANALYSIS 320 8.4.4 USING OVERLAY DATA 323
8.4.5 OVERLAY VERSUS PATTERN PLACEMENT ERROR 326 8.5 THE PROCESS WINDOW
326 8.5.1 THE FOCUS-EXPOSURE MATRIX 326 8.5.2 DEFINING THE PROCESS
WINDOW AND DOF 332 8.5.3 THE ISOFOCAL POINT 336 8.5.4 OVERLAPPING
PROCESS WINDOWS 338 8.5.5 DOSE AND FOCUS CONTROL 339 8.6 H-V BIAS 343
8.6.1 ASTIGMATISM AND H-V BIAS 343 8.6.2 SOURCE SHAPE ASYMMETRY 345
CONTENTS 8.8 8.9 8.10 8.7.1 8.7.2 8.7.3 8.7.4 8.7.5 8.7.6 LINEARITY
DEFINING MEEF AERIAL IMAGE MEEF CONTACT HOLE MEEF MASK ERRORS AS
EFFECTIVE DOSE ERRORS RESIST IMPACT ON MEEF LINE-END SHORTENING 8.8.1
8.8.2 CRITICAL PATTERN MEASURING LES CHARACTERIZING LES PROCESS EFFECTS
SHAPE AND EDGE PLACEMENT ERRORS COLLAPSE .7 MASK ERROR ENHANCEMENT
FACTOR (MEEF) 348 348 349 350 352 353 355 356 357 359 361 362 366
GRADIENT-BASED LITHOGRAPHIE OPTIMIZATION: USING THE NORMALIZED IMAGE
LOG-SLOPE 369 9.1 LITHOGRAPHY AS INFORMATION TRANSFER 369 9.2 AERIAL
IMAGE 370 9.3 IMAGE IN RESIST 377 9.4 EXPOSURE 378 9.5 POST-EXPOSURE
BAKE 381 9.5.1 DIFFUSION IN CONVENTIONAL RESISTS 381 9.5.2 CHEMICALLY
AMPLIFIED RESISTS - REACTION ONLY 383 9.5.3 CHEMICALLY AMPLIFIED RESISTS
- REACTION-DIFFUSION 384 9.5.4 CHEMICALLY AMPLIFIED RESISTS -
REACTION-DIFFUSION WITH QUENCHER 391 9.6 DEVELOP 393 9.6.1 CONVENTIONAL
RESIST 397 9.6.2 CHEMICALLY AMPLIFIED RESIST 399 9.7 RESIST PROFILE
FORMATION 400 9.7.1 THE CASE OF A SEPARABLE DEVELOPMENT RATE FUNCTION
400 9.7.2 LUMPED PARAMETER MODEL 401 9.8 LINE EDGE ROUGHNESS 404 9.9
SUMMARY 406 PROBLEMS 408 RESOLUTION ENHANCEMENT TECHNOLOGIES 411 10.1
RESOLUTION 412 10.1.1 DEFINING RESOLUTION 413 10.1.2 PITCH RESOLUTION
416 10.1.3 NATURAL RESOLUTIONS 418 10.1.4 IMPROVING RESOLUTION 418 10.2
OPTICAL PROXIMITY CORRECTION (OPC) 419 10.2.1 PROXIMITY EFFECTS 419
10.2.2 PROXIMITY CORRECTION - RULE BASED 422 CONTENTS XIII 10.2.3
PROXIMITY CORRECTION - MODEL BASED 425 10.2.4 SUBRESOLUTION ASSIST
FEATURES (SRAFS) 427 10.3 OFF-AXIS ILLUMINATION (OAI) 429 10.4
PHASE-SHIFTING MASKS (PSM) 434 10.4.1 ALTERNATING PSM 435 10.4.2 PHASE
CONFLICTS 438 10.4.3 PHASE AND INTENSITY IMBALANCE 439 10.4.4 ATTENUATED
PSM 441 10.4.5 IMPACT OF PHASE ERRORS 445 10.5 NATURAL RESOLUTIONS 450
10.5.1 CONTACT HOLES AND THE POINT SPREAD FUNCTION 450 10.5.2 THE
COHERENT LINE SPREAD FUNCTION (LSF) 452 10.5.3 THE ISOLATED PHASE EDGE
453 PROBLEMS 454 APPENDIX A. GLOSSARY OF MICROLITHOGRAPHIC TERMS 457
APPENDIX B. CURL, DIVERGENCE, GRADIENT, LAPLACIAN 491 APPENDIX C. THE
DIRAC DELTA FUNCTION 495 INDEX |
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| illustrated | Illustrated |
| index_date | 2024-07-02T19:41:20Z |
| indexdate | 2024-07-09T21:10:49Z |
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| language | English |
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| spelling | Fundamental principles of optical lithography the science of microfabrication Chris Mack Chichester [u.a.] Wiley 2007 XVII, 515 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Circuits intégrés - Conception et construction Microlithographie - Applications industrielles Integrated circuits Design and construction Microlithography Industrial applications Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd rswk-swf Fotolithografie Halbleitertechnologie (DE-588)4174516-4 s DE-604 Mack, Chris A. Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016294703&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Fundamental principles of optical lithography the science of microfabrication Circuits intégrés - Conception et construction Microlithographie - Applications industrielles Integrated circuits Design and construction Microlithography Industrial applications Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd |
| subject_GND | (DE-588)4174516-4 |
| title | Fundamental principles of optical lithography the science of microfabrication |
| title_auth | Fundamental principles of optical lithography the science of microfabrication |
| title_exact_search | Fundamental principles of optical lithography the science of microfabrication |
| title_exact_search_txtP | Fundamental principles of optical lithography the science of microfabrication |
| title_full | Fundamental principles of optical lithography the science of microfabrication Chris Mack |
| title_fullStr | Fundamental principles of optical lithography the science of microfabrication Chris Mack |
| title_full_unstemmed | Fundamental principles of optical lithography the science of microfabrication Chris Mack |
| title_short | Fundamental principles of optical lithography |
| title_sort | fundamental principles of optical lithography the science of microfabrication |
| title_sub | the science of microfabrication |
| topic | Circuits intégrés - Conception et construction Microlithographie - Applications industrielles Integrated circuits Design and construction Microlithography Industrial applications Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd |
| topic_facet | Circuits intégrés - Conception et construction Microlithographie - Applications industrielles Integrated circuits Design and construction Microlithography Industrial applications Fotolithografie Halbleitertechnologie |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016294703&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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