Liquid phase epitaxy of electronic, optical, and optoelectronic materials:
Saved in:
| Format: | Book |
|---|---|
| Language: | English |
| Published: |
Chichester
Wiley
2007
|
| Subjects: | |
| Online Access: | Table of contents only Publisher description Inhaltsverzeichnis |
| Item Description: | Includes bibliographical references |
| Physical Description: | XXII, 441 S. Ill., graph. Darst. |
| ISBN: | 0470852909 9780470852903 |
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MARC
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| 245 | 1 | 0 | |a Liquid phase epitaxy of electronic, optical, and optoelectronic materials |c ed. by Peter Capper ... |
| 264 | 1 | |a Chichester |b Wiley |c 2007 | |
| 300 | |a XXII, 441 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Includes bibliographical references | ||
| 650 | 4 | |a Electronics |x Materials | |
| 650 | 4 | |a Optical materials | |
| 650 | 4 | |a Optoelectronic devices |x Materials | |
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Liquid phase epitaxy | |
| 650 | 4 | |a Crystal growth | |
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| 700 | 1 | |a Capper, Peter |e Sonstige |4 oth | |
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| _version_ | 1804137138591105024 |
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| adam_text | LIQUID PHASE EPITAXY OF ELECTRONIC, OPTICAL AND OPTOELECTRONIC MATERIALS
EDITED BY PETER CAPPER SELEX SENSORS AND AIRBORNE SYSTEMS INFRARED LTD,
SOUTHAMPTON, UK MICHAEL MAUK SCHOOL OF ENGINEERING & APPLIED SCIENCE,
UNIVERSITY OF PENNSYLVANIA, PHILADELPHIA, USA B1CENTENNIAU 31CENTENN1AL
JOHN WILEY & SONS, LTD CONTENTS SERIES PREFACE XI PREFACE XIII
ACKNOWLEDGEMENTS XIX LIST OF CONTRIBUTORS XXI 1 INTRODUCTION TO LIQUID
PHASE EPITAXY 1 HANS J. SCHEEL 1.1 GENERAL ASPECTS OF LIQUID PHASE
EPITAXY 1 1.2 EPITAXIAL GROWTH MODES, GROWTH MECHANISMS AND LAYER
THICKNESSES 3 1.3 THE SUBSTRATE PROBLEM 15 1.4 CONCLUSIONS 16
ACKNOWLEDGEMENTS 17 REFERENCES 17 2 LIQUID PHASE EPITAXY IN RUSSIA PRIOR
TO 1990 21 V.A. MISHURNYI 2.1 INTRODUCTION 21 2.2 SPECIFIC FEATURES OF
GROWTH OF QUANTUM-WELL HETEROSTRACTURES BY LPE 23 2.2.1 LPE GROWTH FROM
A CAPILLARY 23 2.2.2 LOW-TEMPERATURE LPE 25 2.2.3 LPE GROWTH OF INGAASP
QUANTUM WELL HETEROSTRACTURES 29 2.3 RARE-EARTH ELEMENTS IN LPE
TECHNOLOGY OF SOME III-V BINARY COMPOUNDS AND SOLID SOLUTIONS 35 2.4
CONCLUSIONS 37 ACKNOWLEDGEMENTS 37 REFERENCES 38 3 PHASE DIAGRAMS AND
MODELING IN LIQUID PHASE EPITAXY 45 KAZUO NAKAJIMA 3.1 INTRODUCTION 45
3.2 EQUILIBRIUM PHASE DIAGRAMS 46 3.2.1 BINARY, TERNARY AND QUATERNARY
PHASE DIAGRAMS 46 VI CONTENTS 3.2.2 CALCULATION OF BINARY, TERNARY AND
QUATERNARY PHASE DIAGRAMS 49 3.2.3 CALCULATION OF PHASE DIAGRAMS
CONSIDERING THE SURFACE, INTERFACE AND STRAIN ENERGIES 54 3.2.4
EXPERIMENTAL DETERMINATION OF PHASE DIAGRAMS 59 3.2.5 MISCIBILITY GAP 64
3.3 TECHNOLOGIES OF LPE GROWTH 66 3.4 III-V MATERIALS FOR LPE GROWTH 68
3.5 LATTICE MATCHING 69 3.6 GROWTH OF MISFIT-DISLOCATION-FREE WAFERS 71
3.7 PHASE DIAGRAMS OF GROWTH MODE 73 3.8 GROWTH KINETICS 77 3.8.1
CALCULATION OF III-V LAYER THICKNESS 77 3.8.2 COMPOSITIONAL VARIATION IN
III-V TERNARY LAYERS 78 3.9 SUMMARY 79 REFERENCES 79 APPENDIX 82 4
EQUIPMENT AND INSTRUMENTATION FOR LIQUID PHASE EPITAXY 85 MICHAEL G.
MAUK AND JAMES B. MCNEELY 4.1 INTRODUCTION 85 4.2 OVERVIEW, GENERAL
DESCRIPTION AND OPERATION OF HORIZONTAL SLIDEBOAT LPE SYSTEM 89 4.3
CRUCIBLES AND SLIDEBOATS 91 4.4 ALTERNATIVE SLIDEBOAT DESIGNS 92 4.5
FURNACES AND HEATING 96 4.6 LPE AMBIENT 98 4.7 TUBES, SEALING AND GAS
HANDLING 99 4.8 CONTROLLERS AND HEATING 99 4.9 TEMPERATURE MEASUREMENTS
AND OTHER INSTRUMENTATION 100 4.10 SAFETY 101 4.11 PRODUCTION LPE
SYSTEMS 101 REFERENCES 105 5 SILICON, GERMANIUM AND SILICON-GERMANIUM
LIQUID PHASE EPITAXY 109 MICHAEL G. MAUK 5.1 INTRODUCTION AND SCOPE OF
REVIEW 110 5.2 HISTORICAL PERSPECTIVE 111 5.3 BASIS OF SILICON AND
GERMANIUM LPE 115 5.3.1 NUCLEATION OF SILICON FROM A MOLTEN METAL
SOLUTION 119 5.4 SILICON LPE METHODS 124 5.4.1 STEADY-STATE METHODS OF
SOLUTION GROWTH AND LPE 125 5.5 SOLVENT SELECTION 135 5.6
LOW-TEMPERATURE SILICON LPE 137 5.7 PURIFICATION OF SILICON FOR SOLAR
CELLS IN AN LPE PROCESS 138 5.8 ELECTRICAL PROPERTIES OF LPE-GROWN
SILICON 140 5.9 LPE OF SI- AND GE-BASED ALLOYS 141 CONTENTS VII 5.10
SELECTIVE LPE AND LIQUID PHASE ELO 142 5.11 SOLAR CELLS 144 5.11.1
EPITAXIAL SILICON SOLAR CELLS BY LPE 145 5.11.2 SI SOLUTION GROWTH ON
NONSILICON SUBSTRATES FOR SOLAR CELLS 149 5.12 OTHER APPLICATIONS OF
SILICON AND GERMANIUM LPE 150 5.13 CONCLUSIONS AND OUTLOOK 151
REFERENCES 151 APPENDIX 1. PHASE EQUILIBRIA MODELING: THE SILICON-METAL
HQUIDUS 166 ALI THE SILICON-METAL BINARY HQUIDUS 168 AI.2 ALLOY SOLVENTS
168 APPENDIX 2. IMPURITIES AND DOPING IN SILICON LPE 171 APPENDIX 3.
EFFECTS OF OXYGEN AND WATER VAPOR IN SI LPE 175 A3.1 THERMODYNAMICS OF
SILICON OXIDATION 176 A3.2 SILICON PASSIVITY AND MELT REDUCING AGENTS
178 6 LIQUID PHASE EPITAXY OF SILICON CARBIDE 179 R, YAKIMOVA AND M.
SYVAEJAERVI 6.1 INTRODUCTION 179 6.2 FUNDAMENTAL ASPECTS OF LPE OF SIC 180
6.3 GROWTH METHODS FOR SIC LPE 185 6.3.1 MODIFIED TRAVELLING SOLVENT
METHOD 186 6.3.2 DIPPING METHOD 191 6.3.3 CONTAINER FREE LPE 191 6.3.4
VAPOUR-LIQUID-SOLID MECHANISM 192 6.4 CHARACTERISTIC FEATURES OF SIC LPE
193 6.4.1 STEP-BUNCHING 193 6.4.2 MICROPIPE ALLING 195 6.5 LPE OF SIC
UNDER REDUCED GRAVITY 196 6.6 APPLICATIONS 198 REFERENCES 199 7 LIQUID
PHASE EPITAXY OF GALLIUM NITRIDE 203 HANS J. SCHEEL AND DENNIS ELWELL
7.1 INTRODUCTION 203 7.2 CONTROL OF EPITAXIAL GROWTH MODES 207 7.3
THERMODYNAMICS AND PHASE DIAGRAMS 209 7.4 REQUIREMENTS FOR LPE 211 7.4.1
SOLVENTS 211 7.4.2 CRUCIBLES 213 7.4.3 GROWTH ATMOSPHERE 214 7.4.4
SUBSTRATES 215 7.5 LPE RESULTS, CHARACTERIZATION OF LPE(SOLUTION)-GROWN
GAN 218 7.6 CUBIC GAN 221 7.7 CONCLUSIONS AND OUTLOOK 221 REFERENCES 222
VIII CONTENTS 8 LIQUID PHASE EPITAXY OF QUANTUM WELLS AND QUANTUM DOTS
227 A. KRIER, X.L. HUANG AND Z. LABADI 8.1 INTRODUCTION 227 8.2 LPE
GROWTH OF QUANTUM WELLS 228 8.3 THICKNESS OF RAPID SLIDER LPE LAYERS 231
8.4 INTERFACE ABRUPTNESS 235 8.5 COMPOSITIONAL HOMOGENEITY 236 8.6
DEVICES INCORPORATING ULTRATHIN LPE LAYERS 237 8.7 LPE GROWTH OF INAS
QUANTUM WELLS 239 8.7.1 PL CHARACTERISATION 241 8.8 LPE GROWTH OF
QUANTUM DOTS FOR MID-INFRARED OPTOELECTRONIC DEVICES 243 8.8.1 INSB QDS
ON GAAS (100) SUBSTRATES 244 8.8.2 INVESTIGATION OF INASSB QDS 247 8.9
MID-INFRARED LUMINESCENCE OF ENCAPSULATED INASSB QDS 249 8.10
ELECTROLUMINESCENCE OF INASSB QD LEDS 251 8.11 SUMMARY 253
ACKNOWLEDGEMENTS 253 REFERENCES 254 9 LIQUID PHASE EPITAXY OF HGI^CD^TE
(MCT) 259 P. CAPPER 9.1 INTRODUCTION 259 9.2 GROWTH 261 9.2.1
INTRODUCTION 261 9.2.2 PHASE DIAGRAM AND DEFECT CHEMISTRY 262 9.2.3 LPE
GROWTH TECHNIQUES 264 9.3 MATERIAL CHARACTERISTICS 269 9.3.1 COMPOSITION
AND THICKNESS 271 9.3.2 CRYSTAL QUALITY AND SURFACE MORPHOLOGY 272 9.3.3
IMPURITY DOPING AND ELECTRICAL PROPERTIES 273 9.3.4 MULTIPLE-LAYER
HETEROJUNCTION STRUCTURES 278 9.4 DEVICE STATUS 278 9.4.1 LPE GROWTH ON
SI-BASED SUBSTRATES 283 9.5 SUMMARY AND FUTURE DEVELOPMENTS 283
REFERENCES 284 10 LIQUID PHASE EPITAXY OF WIDEGAP II-VIS 289 J. F. WANG
AND M. ISSHIKI 10.1 INTRODUCTION 289 10.2 BASIC PROPERTIES 289 10.3 LPE
TECHNIQUE 291 10.4 REVIEW OF SOME EXPERIMENTAL RESULTS 292 10.4.1 GROWTH
FROM ZN, ZN-GA AND HALIDE SOLVENTS 293 10.4.2 GROWTH FROM TE AND SE
SOLVENTS 296 CONTENTS IX 10.4.3 GROWTH FROM SN SOLVENT 299 10.4.4 GROWTH
FROM BI SOLVENT 301 10.5 CONCLUSION 302 REFERENCES 302 11 LIQUID PHASE
EPITAXY OF GARNETS 305 TAKETOSHI HIBIYA AND PETER GOERNERT 11.1
INTRODUCTION 305 11.2 LPE GROWTH 309 11.3 PHASE DIAGRAM AND CHEMISTRY
311 11.3.1 PHASE DIAGRAM 311 11.3.2 CHEMICAL THERMODYNAMICS OF LPE 314
11.3.3 EFFECT OF OXYGEN PARTIAL PRESSURE ON MAGNETIC PROPERTIES 317 11.4
GROWTH MECHANISM AND MORPHOLOGY 317 11.4.1 MASS TRANSPORT AND GROWTH
RATE 317 11.4.2 CONTROL OF MORPHOLOGY 321 11.5 BI-SUBSTITUTED GARNET
FILMS 323 11.6 PROPERTIES OF MAGNETIC GARNET FILMS 325 11.6.1 MISFIT
STRAIN 325 11.6.2 FARADAY ROTATION 328 11.6.3 OPTICAL ABSORPTION 328
11.6.4 MAGNETIC ANISOTROPY 333 11.7 APPLICATIONS OF GARNET FILMS 334
11.8 CONCLUSIONS 337 ACKNOWLEDGEMENTS 337 REFERENCES 337 12 LIQUID PHASE
EPITAXY: A SURVEY OF CAPABILITIES, RECENT DEVELOPMENTS AND SPECIALIZED
APPLICATIONS 341 MICHAEL G. MAUK 12.1 INTRODUCTION 342 12.2 COMPARISON
OF EPITAXY TECHNIQUES AND SOME ADVANTAGES OF LPE 343 12.3 PREVIOUS
REVIEWS OF LPE 355 12.4 MODELING OF LPE PROCESSES 355 12.5 SURVEY OF NEW
DEVELOPMENTS AND SPECIALIZED APPLICATIONS OF LPE 356 12.5.1 FIVE- AND
SIX-COMPONENT III-V SEMICONDUCTOR ALLOYS BY LPE 357 12.5.2 LPE LAYERS
WITH ATOMICALLY SMOOTH SURFACES 358 12.5.3 QUANTUM WELLS, SUPERLATTICES
AND NANOSTRUCTURES BY LPE 358 12.5.4 GROWTH OF THICK TERNARY AND
QUATERNARY ALLOY LAYERS FOR VIRTUAL SUBSTRATES WITH ADJUSTABLE LATTICE
PARAMETERS 360 12.5.5 SELECTIVE EPITAXY AND ELO 363 12.5.6 MELT EPITAXY
366 12.5.7 RARE EARTH DOPING AND OTHER DOPING EFFECTS IN LPE 366 12.5.8
FUNDAMENTAL STUDIES OF CRYSTAL GROWTH, MELT CONVECTION AND LIQUID-METAL
TRANSPORT PROPERTIES 367 12.5.9 NOVEL MELT COMPOSITIONS FOR LPE 369
12.5.10 LIQUID PHASE ELECTROEPITAXY 370 CONTENTS 12.5.11 LPE OF
THALLIUM-, MANGANESE-, AND BISMUTH-CONTAINING III-V ALLOYS 373 12.5.12
CONTROL OF SEGREGATION IN LPE-GROWN ALLOYS 374 12.5.13 LPE HETEROEPITAXY
376 12.5.14 SIC AND III-V NITRIDE LPE 381 12.5.15 SOME OTHER MATERIALS
GROWN BY LPE OR SOLUTION GROWTH 383 12.5.16 LPE FOR SHAPED CRYSTAL
GROWTH 389 12.6 CONCLUSIONS AND OUTLOOK 391 REFERENCES 392 13 LIQUID
PHASE EPITAXY FOR LIGHT EMITTING DIODES 415 MICHAEL G. MAUK 13.1
INTRODUCTION 415 13.2 COMMERCIAL LEDS 419 13.3 LPE FOR WIDE-BANDGAP
(BLUE AND UV) LEDS 420 13.3.1 SILICON CARBIDE LEDS 420 13.3.2
WIDE-BANDGAP II-VI COMPOUND LEDS 421 13.3.3 III-V NITRIDE LEDS 422 13.4
LPE FOR MID-INFRARED LEDS 422 13.5 LPE FOR NEW LED DESIGN CONCEPTS 424
13.6 OUTLOOK 426 REFERENCES 430 INDEX 435
|
| adam_txt |
LIQUID PHASE EPITAXY OF ELECTRONIC, OPTICAL AND OPTOELECTRONIC MATERIALS
EDITED BY PETER CAPPER SELEX SENSORS AND AIRBORNE SYSTEMS INFRARED LTD,
SOUTHAMPTON, UK MICHAEL MAUK SCHOOL OF ENGINEERING & APPLIED SCIENCE,
UNIVERSITY OF PENNSYLVANIA, PHILADELPHIA, USA B1CENTENNIAU 31CENTENN1AL
JOHN WILEY & SONS, LTD CONTENTS SERIES PREFACE XI PREFACE XIII
ACKNOWLEDGEMENTS XIX LIST OF CONTRIBUTORS XXI 1 INTRODUCTION TO LIQUID
PHASE EPITAXY 1 HANS J. SCHEEL 1.1 GENERAL ASPECTS OF LIQUID PHASE
EPITAXY 1 1.2 EPITAXIAL GROWTH MODES, GROWTH MECHANISMS AND LAYER
THICKNESSES 3 1.3 THE SUBSTRATE PROBLEM 15 1.4 CONCLUSIONS 16
ACKNOWLEDGEMENTS 17 REFERENCES 17 2 LIQUID PHASE EPITAXY IN RUSSIA PRIOR
TO 1990 21 V.A. MISHURNYI 2.1 INTRODUCTION 21 2.2 SPECIFIC FEATURES OF
GROWTH OF QUANTUM-WELL HETEROSTRACTURES BY LPE 23 2.2.1 LPE GROWTH FROM
A CAPILLARY 23 2.2.2 LOW-TEMPERATURE LPE 25 2.2.3 LPE GROWTH OF INGAASP
QUANTUM WELL HETEROSTRACTURES 29 2.3 RARE-EARTH ELEMENTS IN LPE
TECHNOLOGY OF SOME III-V BINARY COMPOUNDS AND SOLID SOLUTIONS 35 2.4
CONCLUSIONS 37 ACKNOWLEDGEMENTS 37 REFERENCES 38 3 PHASE DIAGRAMS AND
MODELING IN LIQUID PHASE EPITAXY 45 KAZUO NAKAJIMA 3.1 INTRODUCTION 45
3.2 EQUILIBRIUM PHASE DIAGRAMS 46 3.2.1 BINARY, TERNARY AND QUATERNARY
PHASE DIAGRAMS 46 VI CONTENTS 3.2.2 CALCULATION OF BINARY, TERNARY AND
QUATERNARY PHASE DIAGRAMS 49 3.2.3 CALCULATION OF PHASE DIAGRAMS
CONSIDERING THE SURFACE, INTERFACE AND STRAIN ENERGIES 54 3.2.4
EXPERIMENTAL DETERMINATION OF PHASE DIAGRAMS 59 3.2.5 MISCIBILITY GAP 64
3.3 TECHNOLOGIES OF LPE GROWTH 66 3.4 III-V MATERIALS FOR LPE GROWTH 68
3.5 LATTICE MATCHING 69 3.6 GROWTH OF MISFIT-DISLOCATION-FREE WAFERS 71
3.7 PHASE DIAGRAMS OF GROWTH MODE 73 3.8 GROWTH KINETICS 77 3.8.1
CALCULATION OF III-V LAYER THICKNESS 77 3.8.2 COMPOSITIONAL VARIATION IN
III-V TERNARY LAYERS 78 3.9 SUMMARY 79 REFERENCES 79 APPENDIX 82 4
EQUIPMENT AND INSTRUMENTATION FOR LIQUID PHASE EPITAXY 85 MICHAEL G.
MAUK AND JAMES B. MCNEELY 4.1 INTRODUCTION 85 4.2 OVERVIEW, GENERAL
DESCRIPTION AND OPERATION OF HORIZONTAL SLIDEBOAT LPE SYSTEM 89 4.3
CRUCIBLES AND SLIDEBOATS 91 4.4 ALTERNATIVE SLIDEBOAT DESIGNS 92 4.5
FURNACES AND HEATING 96 4.6 LPE AMBIENT 98 4.7 TUBES, SEALING AND GAS
HANDLING 99 4.8 CONTROLLERS AND HEATING 99 4.9 TEMPERATURE MEASUREMENTS
AND OTHER INSTRUMENTATION 100 4.10 SAFETY 101 4.11 PRODUCTION LPE
SYSTEMS 101 REFERENCES 105 5 SILICON, GERMANIUM AND SILICON-GERMANIUM
LIQUID PHASE EPITAXY 109 MICHAEL G. MAUK 5.1 INTRODUCTION AND SCOPE OF
REVIEW 110 5.2 HISTORICAL PERSPECTIVE 111 5.3 BASIS OF SILICON AND
GERMANIUM LPE 115 5.3.1 NUCLEATION OF SILICON FROM A MOLTEN METAL
SOLUTION 119 5.4 SILICON LPE METHODS 124 5.4.1 STEADY-STATE METHODS OF
SOLUTION GROWTH AND LPE 125 5.5 SOLVENT SELECTION 135 5.6
LOW-TEMPERATURE SILICON LPE 137 5.7 PURIFICATION OF SILICON FOR SOLAR
CELLS IN AN LPE PROCESS 138 5.8 ELECTRICAL PROPERTIES OF LPE-GROWN
SILICON 140 5.9 LPE OF SI- AND GE-BASED ALLOYS 141 CONTENTS VII 5.10
SELECTIVE LPE AND LIQUID PHASE ELO 142 5.11 SOLAR CELLS 144 5.11.1
EPITAXIAL SILICON SOLAR CELLS BY LPE 145 5.11.2 SI SOLUTION GROWTH ON
NONSILICON SUBSTRATES FOR SOLAR CELLS 149 5.12 OTHER APPLICATIONS OF
SILICON AND GERMANIUM LPE 150 5.13 CONCLUSIONS AND OUTLOOK 151
REFERENCES 151 APPENDIX 1. PHASE EQUILIBRIA MODELING: THE SILICON-METAL
HQUIDUS 166 ALI THE SILICON-METAL BINARY HQUIDUS 168 AI.2 ALLOY SOLVENTS
168 APPENDIX 2. IMPURITIES AND DOPING IN SILICON LPE 171 APPENDIX 3.
EFFECTS OF OXYGEN AND WATER VAPOR IN SI LPE 175 A3.1 THERMODYNAMICS OF
SILICON OXIDATION 176 A3.2 SILICON PASSIVITY AND MELT REDUCING AGENTS
178 6 LIQUID PHASE EPITAXY OF SILICON CARBIDE 179 R, YAKIMOVA AND M.
SYVAEJAERVI 6.1 INTRODUCTION 179 6.2 FUNDAMENTAL ASPECTS OF LPE OF SIC 180
6.3 GROWTH METHODS FOR SIC LPE 185 6.3.1 MODIFIED TRAVELLING SOLVENT
METHOD 186 6.3.2 DIPPING METHOD 191 6.3.3 CONTAINER FREE LPE 191 6.3.4
VAPOUR-LIQUID-SOLID MECHANISM 192 6.4 CHARACTERISTIC FEATURES OF SIC LPE
193 6.4.1 STEP-BUNCHING 193 6.4.2 MICROPIPE ALLING 195 6.5 LPE OF SIC
UNDER REDUCED GRAVITY 196 6.6 APPLICATIONS 198 REFERENCES 199 7 LIQUID
PHASE EPITAXY OF GALLIUM NITRIDE 203 HANS J. SCHEEL AND DENNIS ELWELL
7.1 INTRODUCTION 203 7.2 CONTROL OF EPITAXIAL GROWTH MODES 207 7.3
THERMODYNAMICS AND PHASE DIAGRAMS 209 7.4 REQUIREMENTS FOR LPE 211 7.4.1
SOLVENTS 211 7.4.2 CRUCIBLES 213 7.4.3 GROWTH ATMOSPHERE 214 7.4.4
SUBSTRATES 215 7.5 LPE RESULTS, CHARACTERIZATION OF LPE(SOLUTION)-GROWN
GAN 218 7.6 CUBIC GAN 221 7.7 CONCLUSIONS AND OUTLOOK 221 REFERENCES 222
VIII CONTENTS 8 LIQUID PHASE EPITAXY OF QUANTUM WELLS AND QUANTUM DOTS
227 A. KRIER, X.L. HUANG AND Z. LABADI 8.1 INTRODUCTION 227 8.2 LPE
GROWTH OF QUANTUM WELLS 228 8.3 THICKNESS OF RAPID SLIDER LPE LAYERS 231
8.4 INTERFACE ABRUPTNESS 235 8.5 COMPOSITIONAL HOMOGENEITY 236 8.6
DEVICES INCORPORATING ULTRATHIN LPE LAYERS 237 8.7 LPE GROWTH OF INAS
QUANTUM WELLS 239 8.7.1 PL CHARACTERISATION 241 8.8 LPE GROWTH OF
QUANTUM DOTS FOR MID-INFRARED OPTOELECTRONIC DEVICES 243 8.8.1 INSB QDS
ON GAAS (100) SUBSTRATES 244 8.8.2 INVESTIGATION OF INASSB QDS 247 8.9
MID-INFRARED LUMINESCENCE OF ENCAPSULATED INASSB QDS 249 8.10
ELECTROLUMINESCENCE OF INASSB QD LEDS 251 8.11 SUMMARY 253
ACKNOWLEDGEMENTS 253 REFERENCES 254 9 LIQUID PHASE EPITAXY OF HGI^CD^TE
(MCT) 259 P. CAPPER 9.1 INTRODUCTION 259 9.2 GROWTH 261 9.2.1
INTRODUCTION 261 9.2.2 PHASE DIAGRAM AND DEFECT CHEMISTRY 262 9.2.3 LPE
GROWTH TECHNIQUES 264 9.3 MATERIAL CHARACTERISTICS 269 9.3.1 COMPOSITION
AND THICKNESS 271 9.3.2 CRYSTAL QUALITY AND SURFACE MORPHOLOGY 272 9.3.3
IMPURITY DOPING AND ELECTRICAL PROPERTIES 273 9.3.4 MULTIPLE-LAYER
HETEROJUNCTION STRUCTURES 278 9.4 DEVICE STATUS 278 9.4.1 LPE GROWTH ON
SI-BASED SUBSTRATES 283 9.5 SUMMARY AND FUTURE DEVELOPMENTS 283
REFERENCES 284 10 LIQUID PHASE EPITAXY OF WIDEGAP II-VIS 289 J. F. WANG
AND M. ISSHIKI 10.1 INTRODUCTION 289 10.2 BASIC PROPERTIES 289 10.3 LPE
TECHNIQUE 291 10.4 REVIEW OF SOME EXPERIMENTAL RESULTS 292 10.4.1 GROWTH
FROM ZN, ZN-GA AND HALIDE SOLVENTS 293 10.4.2 GROWTH FROM TE AND SE
SOLVENTS 296 CONTENTS IX 10.4.3 GROWTH FROM SN SOLVENT 299 10.4.4 GROWTH
FROM BI SOLVENT 301 10.5 CONCLUSION 302 REFERENCES 302 11 LIQUID PHASE
EPITAXY OF GARNETS 305 TAKETOSHI HIBIYA AND PETER GOERNERT 11.1
INTRODUCTION 305 11.2 LPE GROWTH 309 11.3 PHASE DIAGRAM AND CHEMISTRY
311 11.3.1 PHASE DIAGRAM 311 11.3.2 CHEMICAL THERMODYNAMICS OF LPE 314
11.3.3 EFFECT OF OXYGEN PARTIAL PRESSURE ON MAGNETIC PROPERTIES 317 11.4
GROWTH MECHANISM AND MORPHOLOGY 317 11.4.1 MASS TRANSPORT AND GROWTH
RATE 317 11.4.2 CONTROL OF MORPHOLOGY 321 11.5 BI-SUBSTITUTED GARNET
FILMS 323 11.6 PROPERTIES OF MAGNETIC GARNET FILMS 325 11.6.1 MISFIT
STRAIN 325 11.6.2 FARADAY ROTATION 328 11.6.3 OPTICAL ABSORPTION 328
11.6.4 MAGNETIC ANISOTROPY 333 11.7 APPLICATIONS OF GARNET FILMS 334
11.8 CONCLUSIONS 337 ACKNOWLEDGEMENTS 337 REFERENCES 337 12 LIQUID PHASE
EPITAXY: A SURVEY OF CAPABILITIES, RECENT DEVELOPMENTS AND SPECIALIZED
APPLICATIONS 341 MICHAEL G. MAUK 12.1 INTRODUCTION 342 12.2 COMPARISON
OF EPITAXY TECHNIQUES AND SOME ADVANTAGES OF LPE 343 12.3 PREVIOUS
REVIEWS OF LPE 355 12.4 MODELING OF LPE PROCESSES 355 12.5 SURVEY OF NEW
DEVELOPMENTS AND SPECIALIZED APPLICATIONS OF LPE 356 12.5.1 FIVE- AND
SIX-COMPONENT III-V SEMICONDUCTOR ALLOYS BY LPE 357 12.5.2 LPE LAYERS
WITH ATOMICALLY SMOOTH SURFACES 358 12.5.3 QUANTUM WELLS, SUPERLATTICES
AND NANOSTRUCTURES BY LPE 358 12.5.4 GROWTH OF THICK TERNARY AND
QUATERNARY ALLOY LAYERS FOR 'VIRTUAL' SUBSTRATES WITH ADJUSTABLE LATTICE
PARAMETERS 360 12.5.5 SELECTIVE EPITAXY AND ELO 363 12.5.6 MELT EPITAXY
366 12.5.7 RARE EARTH DOPING AND OTHER DOPING EFFECTS IN LPE 366 12.5.8
FUNDAMENTAL STUDIES OF CRYSTAL GROWTH, MELT CONVECTION AND LIQUID-METAL
TRANSPORT PROPERTIES 367 12.5.9 NOVEL MELT COMPOSITIONS FOR LPE 369
12.5.10 LIQUID PHASE ELECTROEPITAXY 370 CONTENTS 12.5.11 LPE OF
THALLIUM-, MANGANESE-, AND BISMUTH-CONTAINING III-V ALLOYS 373 12.5.12
CONTROL OF SEGREGATION IN LPE-GROWN ALLOYS 374 12.5.13 LPE HETEROEPITAXY
376 12.5.14 SIC AND III-V NITRIDE LPE 381 12.5.15 SOME OTHER MATERIALS
GROWN BY LPE OR SOLUTION GROWTH 383 12.5.16 LPE FOR SHAPED CRYSTAL
GROWTH 389 12.6 CONCLUSIONS AND OUTLOOK 391 REFERENCES 392 13 LIQUID
PHASE EPITAXY FOR LIGHT EMITTING DIODES 415 MICHAEL G. MAUK 13.1
INTRODUCTION 415 13.2 COMMERCIAL LEDS 419 13.3 LPE FOR WIDE-BANDGAP
(BLUE AND UV) LEDS 420 13.3.1 SILICON CARBIDE LEDS 420 13.3.2
WIDE-BANDGAP II-VI COMPOUND LEDS 421 13.3.3 III-V NITRIDE LEDS 422 13.4
LPE FOR MID-INFRARED LEDS 422 13.5 LPE FOR NEW LED DESIGN CONCEPTS 424
13.6 OUTLOOK 426 REFERENCES 430 INDEX 435 |
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| discipline_str_mv | Physik Elektrotechnik / Elektronik / Nachrichtentechnik Werkstoffwissenschaften / Fertigungstechnik |
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| genre_facet | Aufsatzsammlung |
| id | DE-604.BV022876863 |
| illustrated | Illustrated |
| index_date | 2024-07-02T18:49:13Z |
| indexdate | 2024-07-09T21:07:32Z |
| institution | BVB |
| isbn | 0470852909 9780470852903 |
| language | English |
| lccn | 2007013981 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016081894 |
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| physical | XXII, 441 S. Ill., graph. Darst. |
| publishDate | 2007 |
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| publisher | Wiley |
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| spelling | Liquid phase epitaxy of electronic, optical, and optoelectronic materials ed. by Peter Capper ... Chichester Wiley 2007 XXII, 441 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references Electronics Materials Optical materials Optoelectronic devices Materials Semiconductors Liquid phase epitaxy Crystal growth Werkstoff (DE-588)4065579-9 gnd rswk-swf Flüssigphasenepitaxie (DE-588)4154732-9 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content Flüssigphasenepitaxie (DE-588)4154732-9 s Werkstoff (DE-588)4065579-9 s DE-604 Capper, Peter Sonstige oth http://www.loc.gov/catdir/toc/ecip0714/2007013981.html Table of contents only http://www.loc.gov/catdir/enhancements/fy0739/2007013981-d.html Publisher description GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016081894&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Liquid phase epitaxy of electronic, optical, and optoelectronic materials Electronics Materials Optical materials Optoelectronic devices Materials Semiconductors Liquid phase epitaxy Crystal growth Werkstoff (DE-588)4065579-9 gnd Flüssigphasenepitaxie (DE-588)4154732-9 gnd |
| subject_GND | (DE-588)4065579-9 (DE-588)4154732-9 (DE-588)4143413-4 |
| title | Liquid phase epitaxy of electronic, optical, and optoelectronic materials |
| title_auth | Liquid phase epitaxy of electronic, optical, and optoelectronic materials |
| title_exact_search | Liquid phase epitaxy of electronic, optical, and optoelectronic materials |
| title_exact_search_txtP | Liquid phase epitaxy of electronic, optical, and optoelectronic materials |
| title_full | Liquid phase epitaxy of electronic, optical, and optoelectronic materials ed. by Peter Capper ... |
| title_fullStr | Liquid phase epitaxy of electronic, optical, and optoelectronic materials ed. by Peter Capper ... |
| title_full_unstemmed | Liquid phase epitaxy of electronic, optical, and optoelectronic materials ed. by Peter Capper ... |
| title_short | Liquid phase epitaxy of electronic, optical, and optoelectronic materials |
| title_sort | liquid phase epitaxy of electronic optical and optoelectronic materials |
| topic | Electronics Materials Optical materials Optoelectronic devices Materials Semiconductors Liquid phase epitaxy Crystal growth Werkstoff (DE-588)4065579-9 gnd Flüssigphasenepitaxie (DE-588)4154732-9 gnd |
| topic_facet | Electronics Materials Optical materials Optoelectronic devices Materials Semiconductors Liquid phase epitaxy Crystal growth Werkstoff Flüssigphasenepitaxie Aufsatzsammlung |
| url | http://www.loc.gov/catdir/toc/ecip0714/2007013981.html http://www.loc.gov/catdir/enhancements/fy0739/2007013981-d.html http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016081894&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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