Electronic and optoelectronic properties of semiconductor structures:
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| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Cambridge [u.a.]
Cambridge Univ. Press
2007
|
| Edition: | 1. publ., 1. paperback version |
| Subjects: | |
| Online Access: | Publisher description Table of contents Inhaltsverzeichnis |
| Item Description: | Includes bibliographical references and index |
| Physical Description: | XXIII, 532 S. Ill., graph. Darst. |
| ISBN: | 0521035740 9780521035743 9780521823791 052182379X |
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| 100 | 1 | |a Singh, Jasprit |d 1953- |e Verfasser |0 (DE-588)133826740 |4 aut | |
| 245 | 1 | 0 | |a Electronic and optoelectronic properties of semiconductor structures |c Jasprit Singh |
| 250 | |a 1. publ., 1. paperback version | ||
| 264 | 1 | |a Cambridge [u.a.] |b Cambridge Univ. Press |c 2007 | |
| 300 | |a XXIII, 532 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Includes bibliographical references and index | ||
| 650 | 4 | |a Semiconductors |x Electric properties | |
| 650 | 4 | |a Semiconductors |x Optical properties | |
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| 856 | 4 | |u http://www.loc.gov/catdir/toc/cam031/2002031548.html |3 Table of contents | |
| 856 | 4 | 2 | |m Digitalisierung UB Regensburg |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015564974&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
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| adam_text | CONTENTS
1
PREFACE
xiii
INTRODUCTION
xiv
1.1
Survey of advances in semiconductor
physics
xiv
1.2 Physics behind semiconductors
xvi
1.3 Role of this book
xviii
1.
4
Properties of key materials
xxii
1.5 Frequently used quantities
xxiii
STRUCTURAL PROPERTIES
OF SEMICONDUCTORS
1
1.1
Introduction
1
1.2
Crystal growth
2
1.2.1
Bulk Crystal Growth
2
1.2.2
Epitaxial Crystal Growth
3
1.2.3
Epitaxial Regrowth
9
1.3
Crystal structure
10
1.3.1
Basic Lattice Types
12
1.3.2
Basic Crystal Structures
15
1.3.3
Notation to Denote Planes and Points in a Lattice:
Miller Indices
16
1.3.4
Artificial Structures: Superlattices and Quantum Wells
21
1.3.5
Surfaces: Ideal Versus Real
22
1.3.6
Interfaces
23
1.3.7
Defects in Semiconductors
24
2
Contents
1.4
Strained heterostructures
26
1.5
Strained tensor in lattice mismatched epitaxy
32
1.6
Polar materials and polarization charge
35
1.7
Technology challenges
41
1.8
Problems
41
1.9
References
44
SEMICONDUCTOR BANDSTRUCTURE
46
2.1
Introduction
46
2.2
Bloch theorem and crystal momentum
47
2.2.1
Significance of the k-vector
49
2.3
Metals, insulators, and semiconductors
51
2.4
Tight binding method
54
2.4.1
Bandstructure Arising From a Single Atomic s-Level
57
2.4.2
Bandstructure of Semiconductors
60
2.5
Spin-orbit coupling
62
2.5.1
Symmetry of Bandedge States
68
2.6
Orthogonalized plane wave method
70
2.7 pseudopotential
method
71
2.8
к
·
ρ
method
74
2.9
Selected bandstructures
80
2.10
Mobile carriers: intrinsic carriers
84
2.11
Doping: donors and acceptors
92
2.11.1
Carriers in Doped Semiconductors
95
2.11.2
Mobile Carrier Density and Carrier Freezeout
96
2.11.3
Equilibrium Density of Carriers in Doped Semiconductors
97
2.11.4
Heavily Doped Semiconductors
99
2.12
Technology challenges
102
2.13
Problems
104
2.14
References
107
Contents
vii
З
4
BANDSTRUCTURE MODIFICATIONS
109
3.1
BANDSTRUCTURE OF SEMICONDUCTOR ALLOYS
109
3.1.1
GaAs/AIAs Alloy
113
3.1.2
InAs/GaAs Alloy
113
3.1.3
HgTe/CdTe Alloy
116
3.1.4
Si/Ge Alloy
117
3.1.5
InN.GaN,
AIN
System
117
3.2
BANDSTRUCTURE MODIFICATIONS BY HETEROSTRUCTURES
118
3.2.1
Bandstructure in Quantum Wells
119
3.2.2
Valence Bandstructure in Quantum Wells
123
3.3
Sub-2-dimensional
systems
124
3.4
Strain and deformation potential theory
129
3.4.1
Strained Quantum Wells
137
3.4.2
Self-Assembled Quantum Dots
140
3.5
Polar heterostructures
142
3.6
Technology issues
145
3.7
Problems
145
3.8
References
149
TRANSPORT: GENERAL FORMALISM
152
4.1
Introduction
152
4.2
boltzmann transport equation
153
4.2.1
Diffusion-Induced Evolution of fkCrj
155
4.2.2
External Field-Induced Evolution of fk(r)
156
4.2.3
Scattering-Induced Evolution of fkfrj
156
4.3
Averaging procedures
163
4.4
Transport in a weak magnetic field: Hall mobility
165
4.5
Solution of the BOLTZMANN transport equation
168
4.5.1
Iterative Approach
168
4.6
Balance equation: transport parameters
169
4.7
Technology issues
175
4.8
Problems
176
4.9
References
177
viii Contents
5
6
DEFECT
AND CARRIER-CARRIER SCATTERING 1
79
5.1
Ionized impurity scattering
181
5.2
Alloy scattering
191
5.3
Neutral impurity scattering
194
5.4
Interface roughness scattering
196
5.5
Carrier-carrier scattering
198
5.5.1
Electron-Hole Scattering
198
5.5.2
Electron-Electron Scattering: Scattering of Identical Particles
201
5.6
Auger processes and impact ionization
205
5.7
Problems
213
5.8
References
214
LATTICE VIBRATIONS: PHONON SCATTERING
217
6.1
Lattice vibrations
217
6.2
Phonon statistics
223
6.2.1
Conservation Laws in Scattering of Particles Involving
Phonons
224
6.3
Polar optical phonons
225
6.4
Phonons in heterostructures
230
6.5
Phonon scattering: general formalism
231
6.6
Limits on phonon wavevectors
237
6.6.1
Intravalley Acoustic Phonon Scattering
238
6.6.2
Intravalley Optical Phonon Scattering
239
6.6.3
Intervalley Phonon Scattering
240
6.7
Acoustic phonon scattering
241
6.8
Optical phonons: deformation potential scattering
243
6.9
Optical phonons: polar scattering
246
6.10
Intervalley scattering
251
Contents ix
6.11 Electron-plasmon
scattering
252
6.12
Technology issues
253
6.13
Problems
254
6.14
References
257
7
8
VELOCITY-FIELD RELATIONS
IN SEMICONDUCTORS
260
7.1
low field transport
261
7.2
High field transport: Monte Carlo simulation
264
7.2.1
Simulation of Probability Functions by Random Numbers
265
7.2.2
Injection of Carriers
266
7.2.3
Free Flight
269
7.2.4
Scattering Times
269
7.2.5
Nature of the Scattering Event
271
7.2.6
Energy and Momentum After Scattering
272
7.3
Steady state and transient transport
288
7.3.1
GaAs, Steady State
288
7.3.2
GaAs, Transient Behavior
290
7.3.3
High Field Electron Transport in Si
291
7.4
Balance equation approach to high field transport
292
7.5
Impact ionization in semiconductors
295
7.6
Transport in quantum wells
296
7.7
Transport in quantum wires and dots
303
7.8
Technology issues
305
7.9
Problems
306
7.10
References
308
COHERENCE, DISORDER, AND
MESOSCOPIC SYSTEMS
312
8.1
Introduction
312
8.2
Zener-Bloch oscillations
313
8.3
Resonant tunneling
316
Contents
8.4
Quantum interference effects
323
8.5
Disordered semiconductors
324
8.5.1
Extended and Localized States
326
8.5.2
Transport in Disordered Semiconductors
328
8.6
Mesoscopic systems
334
8.6.1
Conductance Fluctuations and Coherent Transport
335
8.6.2
Columb Blockade Effects
337
8.7
Tecnology issues
340
8.8
Problems
342
8.9
References
343
OPTICAL PROPERTIES OF SEMICONDUCTORS
345
9.1
Introduction
345
9.2
Maxwell equations and vector potential
346
9.3
Electrons in an electromagnetic field
351
9.4
Interband
transitions
358
9.4.1
Interband
Transitions in Bulk Semiconductors
358
9.4.2
Interband
Transitions in Quantum Wells
361
9.5
Indirect
interband
transitions
364
9.6
Intraband transitions
370
9.6.1
Intraband Transitions in Bulk Semiconductors
371
9.6.2
Intraband Transitions in Quantum Wells
371
9.6.3
Interband
Transitions in Quantum Dots
374
9.7
Charge injection and radiative recombination
376
9.7.1
Spontaneous Emission Rate
376
9.7.2
Gain in a Semiconductor
378
9.8
NONRADIATIVE RECOMBINATION
381
9.8.1
Charge Injection: Nonradiative Effects
381
9.8.2
Nonradiative Recombination: Auger Processes
382
9.9
Semiconductor light emitters
385
9.9.1
Light Emitting Diode
386
9.9.2
Laser Diode
387
9.10
Charge injection and
bandgap renormalization
395
9.11
Technology issues
396
Contents xi
9.12 Problems 396
9.13
References
400
10
11
EXCITONIC
EFFECTS AND
MODULATION
OF
OPTICAL PROPERTIES
402
10.1
Introduction
402
10.2
Excitonic states in semiconductors
403
10.3
Optical properties with inclusion of excitonic effects
408
10.4
Excitonic states in quantum wells
413
10.5
Excitonic absorption in quantum wells
414
10.6
exciton broadening effects
416
10.7
Modulation of optical properties
420
10.7.1
Electro-Optic Effect
421
10.7.2
Modulation of Excitonic Transitions:
Quantum Confined Stark Effect
426
10.7.3
Optical Effects in Polar Heterostructures
431
10.8
Exciton quenching
432
10.9
Technology issues
434
10.10
Problems
436
10.11
References
437
SEMICONDUCTORS IN MAGNETIC FIELDS
440
11.1
Semiclassical dynamics of electrons
in a magnetic field
441
11.1.1
Semiclassical Theory of
Magnetotransport 447
11.2
Quantum mechanical approach to electrons
in a magnetic field
451
11.3
Aharnov-Bohm effect
457
11.3.1
Quantum Hall Effect
460
11.4
Magneto-optics in Landau levels
465
11.5
Excitons
in magnetic field
467
xii Contents
A
в
с
11.6
Magnetic semiconductors and Spintronics
469
11.6.1
Spin Selection: Optical Injection
470
11.6.2
Spin Selection: Electrical Injection and Spin Transistor
471
11.7
Technology issues
474
11.8
Problems
474
11.9
References
476
STRAIN IN SEMICONDUCTORS
478
A.1 Elastic strain
478
A.2 Elastic constants
480
EXPERIMENTAL TECHNIQUES
484
B.1 High resolution X-ray diffraction
484
B.1
.1
Double Crystal Diffraction
487
B.2 Drift mobility and Hall mobility
487
B.2.1 Haynes-Schockley Experiment
488
B.2.2 Hall Effect for Carrier Density and Hall Mobility
490
B.3
Photoluminescence (PL)
and excitation
photoluminescence
(PLE)
490
B.4 Optical pump probe experiments
494
QUANTUM MECHANICS: USEFUL CONCEPTS
499
C.1
Density of states
499
C.2
Stationary perturbation theory
504
C.2.1
Nondegenerate Case
504
C.2.2 Degenerate Case
507
C.3
Time dependent perturbation theory and Fermi
GOLDEN RULE
509
C.4
Bound state problem: matrix techniques
511
IMPORTANT PROPERTIES OF SEMICONDUCTORS
514
INDEX
527
|
| adam_txt |
CONTENTS
1
PREFACE
xiii
INTRODUCTION
xiv
1.1
Survey of advances in semiconductor
physics
xiv
1.2 Physics behind semiconductors
xvi
1.3 Role of this book
xviii
1.
4
Properties of key materials
xxii
1.5 Frequently used quantities
xxiii
STRUCTURAL PROPERTIES
OF SEMICONDUCTORS
1
1.1
Introduction
1
1.2
Crystal growth
2
1.2.1
Bulk Crystal Growth
2
1.2.2
Epitaxial Crystal Growth
3
1.2.3
Epitaxial Regrowth
9
1.3
Crystal structure
10
1.3.1
Basic Lattice Types
12
1.3.2
Basic Crystal Structures
15
1.3.3
Notation to Denote Planes and Points in a Lattice:
Miller Indices
16
1.3.4
Artificial Structures: Superlattices and Quantum Wells
21
1.3.5
Surfaces: Ideal Versus Real
22
1.3.6
Interfaces
23
1.3.7
Defects in Semiconductors
24
2
Contents
1.4
Strained heterostructures
26
1.5
Strained tensor in lattice mismatched epitaxy
32
1.6
Polar materials and polarization charge
35
1.7
Technology challenges
41
1.8
Problems
41
1.9
References
44
SEMICONDUCTOR BANDSTRUCTURE
46
2.1
Introduction
46
2.2
Bloch theorem and crystal momentum
47
2.2.1
Significance of the k-vector
49
2.3
Metals, insulators, and semiconductors
51
2.4
Tight binding method
54
2.4.1
Bandstructure Arising From a Single Atomic s-Level
57
2.4.2
Bandstructure of Semiconductors
60
2.5
Spin-orbit coupling
62
2.5.1
Symmetry of Bandedge States
68
2.6
Orthogonalized plane wave method
70
2.7 pseudopotential
method
71
2.8
к
·
ρ
method
74
2.9
Selected bandstructures
80
2.10
Mobile carriers: intrinsic carriers
84
2.11
Doping: donors and acceptors
92
2.11.1
Carriers in Doped Semiconductors
95
2.11.2
Mobile Carrier Density and Carrier Freezeout
96
2.11.3
Equilibrium Density of Carriers in Doped Semiconductors
97
2.11.4
Heavily Doped Semiconductors
99
2.12
Technology challenges
102
2.13
Problems
104
2.14
References
107
Contents
vii
З
4
BANDSTRUCTURE MODIFICATIONS
109
3.1
BANDSTRUCTURE OF SEMICONDUCTOR ALLOYS
109
3.1.1
GaAs/AIAs Alloy
113
3.1.2
InAs/GaAs Alloy
113
3.1.3
HgTe/CdTe Alloy
116
3.1.4
Si/Ge Alloy
117
3.1.5
InN.GaN,
AIN
System
117
3.2
BANDSTRUCTURE MODIFICATIONS BY HETEROSTRUCTURES
118
3.2.1
Bandstructure in Quantum Wells
119
3.2.2
Valence Bandstructure in Quantum Wells
123
3.3
Sub-2-dimensional
systems
124
3.4
Strain and deformation potential theory
129
3.4.1
Strained Quantum Wells
137
3.4.2
Self-Assembled Quantum Dots
140
3.5
Polar heterostructures
142
3.6
Technology issues
145
3.7
Problems
145
3.8
References
149
TRANSPORT: GENERAL FORMALISM
152
4.1
Introduction
152
4.2
boltzmann transport equation
153
4.2.1
Diffusion-Induced Evolution of fkCrj
155
4.2.2
External Field-Induced Evolution of fk(r)
156
4.2.3
Scattering-Induced Evolution of fkfrj
156
4.3
Averaging procedures
163
4.4
Transport in a weak magnetic field: Hall mobility
165
4.5
Solution of the BOLTZMANN transport equation
168
4.5.1
Iterative Approach
168
4.6
Balance equation: transport parameters
169
4.7
Technology issues
175
4.8
Problems
176
4.9
References
177
viii Contents
5
6
DEFECT
AND CARRIER-CARRIER SCATTERING 1
79
5.1
Ionized impurity scattering
181
5.2
Alloy scattering
191
5.3
Neutral impurity scattering
194
5.4
Interface roughness scattering
196
5.5
Carrier-carrier scattering
198
5.5.1
Electron-Hole Scattering
198
5.5.2
Electron-Electron Scattering: Scattering of Identical Particles
201
5.6
Auger processes and impact ionization
205
5.7
Problems
213
5.8
References
214
LATTICE VIBRATIONS: PHONON SCATTERING
217
6.1
Lattice vibrations
217
6.2
Phonon statistics
223
6.2.1
Conservation Laws in Scattering of Particles Involving
Phonons
224
6.3
Polar optical phonons
225
6.4
Phonons in heterostructures
230
6.5
Phonon scattering: general formalism
231
6.6
Limits on phonon wavevectors
237
6.6.1
Intravalley Acoustic Phonon Scattering
238
6.6.2
Intravalley Optical Phonon Scattering
239
6.6.3
Intervalley Phonon Scattering
240
6.7
Acoustic phonon scattering
241
6.8
Optical phonons: deformation potential scattering
243
6.9
Optical phonons: polar scattering
246
6.10
Intervalley scattering
251
Contents ix
6.11 Electron-plasmon
scattering
252
6.12
Technology issues
253
6.13
Problems
254
6.14
References
257
7
8
VELOCITY-FIELD RELATIONS
IN SEMICONDUCTORS
260
7.1
low field transport
261
7.2
High field transport: Monte Carlo simulation
264
7.2.1
Simulation of Probability Functions by Random Numbers
265
7.2.2
Injection of Carriers
266
7.2.3
Free Flight
269
7.2.4
Scattering Times
269
7.2.5
Nature of the Scattering Event
271
7.2.6
Energy and Momentum After Scattering
272
7.3
Steady state and transient transport
288
7.3.1
GaAs, Steady State
288
7.3.2
GaAs, Transient Behavior
290
7.3.3
High Field Electron Transport in Si
291
7.4
Balance equation approach to high field transport
292
7.5
Impact ionization in semiconductors
295
7.6
Transport in quantum wells
296
7.7
Transport in quantum wires and dots
303
7.8
Technology issues
305
7.9
Problems
306
7.10
References
308
COHERENCE, DISORDER, AND
MESOSCOPIC SYSTEMS
312
8.1
Introduction
312
8.2
Zener-Bloch oscillations
313
8.3
Resonant tunneling
316
Contents
8.4
Quantum interference effects
323
8.5
Disordered semiconductors
324
8.5.1
Extended and Localized States
326
8.5.2
Transport in Disordered Semiconductors
328
8.6
Mesoscopic systems
334
8.6.1
Conductance Fluctuations and Coherent Transport
335
8.6.2
Columb Blockade Effects
337
8.7
Tecnology issues
340
8.8
Problems
342
8.9
References
343
OPTICAL PROPERTIES OF SEMICONDUCTORS
345
9.1
Introduction
345
9.2
Maxwell equations and vector potential
346
9.3
Electrons in an electromagnetic field
351
9.4
Interband
transitions
358
9.4.1
Interband
Transitions in Bulk Semiconductors
358
9.4.2
Interband
Transitions in Quantum Wells
361
9.5
Indirect
interband
transitions
364
9.6
Intraband transitions
370
9.6.1
Intraband Transitions in Bulk Semiconductors
371
9.6.2
Intraband Transitions in Quantum Wells
371
9.6.3
Interband
Transitions in Quantum Dots
374
9.7
Charge injection and radiative recombination
376
9.7.1
Spontaneous Emission Rate
376
9.7.2
Gain in a Semiconductor
378
9.8
NONRADIATIVE RECOMBINATION
381
9.8.1
Charge Injection: Nonradiative Effects
381
9.8.2
Nonradiative Recombination: Auger Processes
382
9.9
Semiconductor light emitters
385
9.9.1
Light Emitting Diode
386
9.9.2
Laser Diode
387
9.10
Charge injection and
bandgap renormalization
395
9.11
Technology issues
396
Contents xi
9.12 Problems 396
9.13
References
400
10
11
EXCITONIC
EFFECTS AND
MODULATION
OF
OPTICAL PROPERTIES
402
10.1
Introduction
402
10.2
Excitonic states in semiconductors
403
10.3
Optical properties with inclusion of excitonic effects
408
10.4
Excitonic states in quantum wells
413
10.5
Excitonic absorption in quantum wells
414
10.6
exciton broadening effects
416
10.7
Modulation of optical properties
420
10.7.1
Electro-Optic Effect
421
10.7.2
Modulation of Excitonic Transitions:
Quantum Confined Stark Effect
426
10.7.3
Optical Effects in Polar Heterostructures
431
10.8
Exciton quenching
432
10.9
Technology issues
434
10.10
Problems
436
10.11
References
437
SEMICONDUCTORS IN MAGNETIC FIELDS
440
11.1
Semiclassical dynamics of electrons
in a magnetic field
441
11.1.1
Semiclassical Theory of
Magnetotransport 447
11.2
Quantum mechanical approach to electrons
in a magnetic field
451
11.3
Aharnov-Bohm effect
457
11.3.1
Quantum Hall Effect
460
11.4
Magneto-optics in Landau levels
465
11.5
Excitons
in magnetic field
467
xii Contents
A
в
с
11.6
Magnetic semiconductors and Spintronics
469
11.6.1
Spin Selection: Optical Injection
470
11.6.2
Spin Selection: Electrical Injection and Spin Transistor
471
11.7
Technology issues
474
11.8
Problems
474
11.9
References
476
STRAIN IN SEMICONDUCTORS
478
A.1 Elastic strain
478
A.2 Elastic constants
480
EXPERIMENTAL TECHNIQUES
484
B.1 High resolution X-ray diffraction
484
B.1
.1
Double Crystal Diffraction
487
B.2 Drift mobility and Hall mobility
487
B.2.1 Haynes-Schockley Experiment
488
B.2.2 Hall Effect for Carrier Density and Hall Mobility
490
B.3
Photoluminescence (PL)
and excitation
photoluminescence
(PLE)
490
B.4 Optical pump probe experiments
494
QUANTUM MECHANICS: USEFUL CONCEPTS
499
C.1
Density of states
499
C.2
Stationary perturbation theory
504
C.2.1
Nondegenerate Case
504
C.2.2 Degenerate Case
507
C.3
Time dependent perturbation theory and Fermi
GOLDEN RULE
509
C.4
Bound state problem: matrix techniques
511
IMPORTANT PROPERTIES OF SEMICONDUCTORS
514
INDEX
527 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Singh, Jasprit 1953- |
| author_GND | (DE-588)133826740 |
| author_facet | Singh, Jasprit 1953- |
| author_role | aut |
| author_sort | Singh, Jasprit 1953- |
| author_variant | j s js |
| building | Verbundindex |
| bvnumber | BV022355557 |
| classification_rvk | UP 2800 |
| classification_tum | PHY 685f |
| ctrlnum | (OCoLC)439406116 (DE-599)BVBBV022355557 |
| dewey-full | 537.6/226 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6/226 |
| dewey-search | 537.6/226 |
| dewey-sort | 3537.6 3226 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| discipline_str_mv | Physik |
| edition | 1. publ., 1. paperback version |
| format | Book |
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| id | DE-604.BV022355557 |
| illustrated | Illustrated |
| index_date | 2024-07-02T17:01:22Z |
| indexdate | 2024-07-09T20:55:49Z |
| institution | BVB |
| isbn | 0521035740 9780521035743 9780521823791 052182379X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015564974 |
| oclc_num | 439406116 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-19 DE-BY-UBM DE-1050 DE-355 DE-BY-UBR DE-384 DE-20 |
| owner_facet | DE-91 DE-BY-TUM DE-19 DE-BY-UBM DE-1050 DE-355 DE-BY-UBR DE-384 DE-20 |
| physical | XXIII, 532 S. Ill., graph. Darst. |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | Cambridge Univ. Press |
| record_format | marc |
| spelling | Singh, Jasprit 1953- Verfasser (DE-588)133826740 aut Electronic and optoelectronic properties of semiconductor structures Jasprit Singh 1. publ., 1. paperback version Cambridge [u.a.] Cambridge Univ. Press 2007 XXIII, 532 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index Semiconductors Electric properties Semiconductors Optical properties Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 s DE-604 http://www.loc.gov/catdir/description/cam031/2002031548.html Publisher description http://www.loc.gov/catdir/toc/cam031/2002031548.html Table of contents Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015564974&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Singh, Jasprit 1953- Electronic and optoelectronic properties of semiconductor structures Semiconductors Electric properties Semiconductors Optical properties Halbleiterphysik (DE-588)4113829-6 gnd |
| subject_GND | (DE-588)4113829-6 |
| title | Electronic and optoelectronic properties of semiconductor structures |
| title_auth | Electronic and optoelectronic properties of semiconductor structures |
| title_exact_search | Electronic and optoelectronic properties of semiconductor structures |
| title_exact_search_txtP | Electronic and optoelectronic properties of semiconductor structures |
| title_full | Electronic and optoelectronic properties of semiconductor structures Jasprit Singh |
| title_fullStr | Electronic and optoelectronic properties of semiconductor structures Jasprit Singh |
| title_full_unstemmed | Electronic and optoelectronic properties of semiconductor structures Jasprit Singh |
| title_short | Electronic and optoelectronic properties of semiconductor structures |
| title_sort | electronic and optoelectronic properties of semiconductor structures |
| topic | Semiconductors Electric properties Semiconductors Optical properties Halbleiterphysik (DE-588)4113829-6 gnd |
| topic_facet | Semiconductors Electric properties Semiconductors Optical properties Halbleiterphysik |
| url | http://www.loc.gov/catdir/description/cam031/2002031548.html http://www.loc.gov/catdir/toc/cam031/2002031548.html http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015564974&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT singhjasprit electronicandoptoelectronicpropertiesofsemiconductorstructures |