Holdings: Electrical behaviour of defects at a thermally oxidized silicon surface

Electrical behaviour of defects at a thermally oxidized silicon surface:

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Bibliographic Details
Main Author:	Whelan, Maurice V. (Author)
Format:	Thesis Book
Language:	English
Published:	Eindhoven 1970
Series:	Philips research reports Supplements ; 1970,6
Subjects:	Oxidation Silicium Gitterbaufehler Störstelle MOS Oberfläche Betriebsverhalten Hochschulschrift
Physical Description:	93 S. graph. Darst.

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MARC


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245	1	0	\|a Electrical behaviour of defects at a thermally oxidized silicon surface \|c by M. V. Whelan
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Record in the Search Index

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genre	(DE-588)4113937-9 Hochschulschrift gnd-content
genre_facet	Hochschulschrift
id	DE-604.BV022063594
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index_date	2024-07-02T16:13:40Z
indexdate	2024-07-09T20:50:04Z
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language	English
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physical	93 S. graph. Darst.
publishDate	1970
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series	Philips research reports
series2	Philips research reports : Supplements
spelling	Whelan, Maurice V. Verfasser aut Electrical behaviour of defects at a thermally oxidized silicon surface by M. V. Whelan Eindhoven 1970 93 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Philips research reports : Supplements 1970,6 Zugl.: Eindhoven, Techn. Univ., Diss., 1970 Oxidation (DE-588)4137187-2 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Störstelle (DE-588)4193400-3 gnd rswk-swf MOS (DE-588)4130209-6 gnd rswk-swf Oberfläche (DE-588)4042907-6 gnd rswk-swf Betriebsverhalten (DE-588)4138142-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content MOS (DE-588)4130209-6 s DE-604 Betriebsverhalten (DE-588)4138142-7 s Störstelle (DE-588)4193400-3 s Silicium (DE-588)4077445-4 s Oberfläche (DE-588)4042907-6 s Oxidation (DE-588)4137187-2 s Gitterbaufehler (DE-588)4125030-8 s 1\p DE-604 Philips research reports Supplements ; 1970,6 (DE-604)BV021853844 1970,6 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk
spellingShingle	Whelan, Maurice V. Electrical behaviour of defects at a thermally oxidized silicon surface Philips research reports Oxidation (DE-588)4137187-2 gnd Silicium (DE-588)4077445-4 gnd Gitterbaufehler (DE-588)4125030-8 gnd Störstelle (DE-588)4193400-3 gnd MOS (DE-588)4130209-6 gnd Oberfläche (DE-588)4042907-6 gnd Betriebsverhalten (DE-588)4138142-7 gnd
subject_GND	(DE-588)4137187-2 (DE-588)4077445-4 (DE-588)4125030-8 (DE-588)4193400-3 (DE-588)4130209-6 (DE-588)4042907-6 (DE-588)4138142-7 (DE-588)4113937-9
title	Electrical behaviour of defects at a thermally oxidized silicon surface
title_auth	Electrical behaviour of defects at a thermally oxidized silicon surface
title_exact_search	Electrical behaviour of defects at a thermally oxidized silicon surface
title_exact_search_txtP	Electrical behaviour of defects at a thermally oxidized silicon surface
title_full	Electrical behaviour of defects at a thermally oxidized silicon surface by M. V. Whelan
title_fullStr	Electrical behaviour of defects at a thermally oxidized silicon surface by M. V. Whelan
title_full_unstemmed	Electrical behaviour of defects at a thermally oxidized silicon surface by M. V. Whelan
title_short	Electrical behaviour of defects at a thermally oxidized silicon surface
title_sort	electrical behaviour of defects at a thermally oxidized silicon surface
topic	Oxidation (DE-588)4137187-2 gnd Silicium (DE-588)4077445-4 gnd Gitterbaufehler (DE-588)4125030-8 gnd Störstelle (DE-588)4193400-3 gnd MOS (DE-588)4130209-6 gnd Oberfläche (DE-588)4042907-6 gnd Betriebsverhalten (DE-588)4138142-7 gnd
topic_facet	Oxidation Silicium Gitterbaufehler Störstelle MOS Oberfläche Betriebsverhalten Hochschulschrift
volume_link	(DE-604)BV021853844
work_keys_str_mv	AT whelanmauricev electricalbehaviourofdefectsatathermallyoxidizedsiliconsurface

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