Single stress safe operating area of DMOS transistors integrated in smart power technologies:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Aachen
Shaker
2005
|
| Schriftenreihe: | Berichte aus der Elektrotechnik
|
| Schlagworte: | |
| Beschreibung: | Zugl.: Bremen, Univ., Diss., 2004. -Zsfassung in dt. Sprache |
| Beschreibung: | XXIV, 134 S. Ill., graph. Darst. |
| ISBN: | 3832241914 |
Internformat
MARC
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| 100 | 1 | |a Denison, Marie |d 1974- |e Verfasser |0 (DE-588)130311650 |4 aut | |
| 245 | 1 | 0 | |a Single stress safe operating area of DMOS transistors integrated in smart power technologies |c Marie Denison |
| 264 | 1 | |a Aachen |b Shaker |c 2005 | |
| 300 | |a XXIV, 134 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Berichte aus der Elektrotechnik | |
| 500 | |a Zugl.: Bremen, Univ., Diss., 2004. -Zsfassung in dt. Sprache | ||
| 650 | 0 | 7 | |a DMOS-FET |0 (DE-588)4487701-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Smart-power-Bauelement |0 (DE-588)4234779-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Elektrische Eigenschaft |0 (DE-588)4193812-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Thermodynamische Eigenschaft |0 (DE-588)4126056-9 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Thermodynamische Eigenschaft |0 (DE-588)4126056-9 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Elektrische Eigenschaft |0 (DE-588)4193812-4 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Smart-power-Bauelement |0 (DE-588)4234779-8 |D s |
| 689 | 2 | |5 DE-604 | |
| 689 | 3 | 0 | |a DMOS-FET |0 (DE-588)4487701-8 |D s |
| 689 | 3 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-015206418 | ||
Datensatz im Suchindex
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| bvnumber | BV021991647 |
| ctrlnum | (OCoLC)76781808 (DE-599)BVBBV021991647 |
| dewey-full | 620 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 620 - Engineering and allied operations |
| dewey-raw | 620 |
| dewey-search | 620 |
| dewey-sort | 3620 |
| dewey-tens | 620 - Engineering and allied operations |
| format | Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV021991647 |
| illustrated | Illustrated |
| index_date | 2024-07-02T16:10:38Z |
| indexdate | 2024-07-09T20:48:54Z |
| institution | BVB |
| isbn | 3832241914 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015206418 |
| oclc_num | 76781808 |
| open_access_boolean | |
| owner | DE-706 |
| owner_facet | DE-706 |
| physical | XXIV, 134 S. Ill., graph. Darst. |
| publishDate | 2005 |
| publishDateSearch | 2005 |
| publishDateSort | 2005 |
| publisher | Shaker |
| record_format | marc |
| series2 | Berichte aus der Elektrotechnik |
| spelling | Denison, Marie 1974- Verfasser (DE-588)130311650 aut Single stress safe operating area of DMOS transistors integrated in smart power technologies Marie Denison Aachen Shaker 2005 XXIV, 134 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Berichte aus der Elektrotechnik Zugl.: Bremen, Univ., Diss., 2004. -Zsfassung in dt. Sprache DMOS-FET (DE-588)4487701-8 gnd rswk-swf Smart-power-Bauelement (DE-588)4234779-8 gnd rswk-swf Elektrische Eigenschaft (DE-588)4193812-4 gnd rswk-swf Thermodynamische Eigenschaft (DE-588)4126056-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Thermodynamische Eigenschaft (DE-588)4126056-9 s DE-604 Elektrische Eigenschaft (DE-588)4193812-4 s Smart-power-Bauelement (DE-588)4234779-8 s DMOS-FET (DE-588)4487701-8 s |
| spellingShingle | Denison, Marie 1974- Single stress safe operating area of DMOS transistors integrated in smart power technologies DMOS-FET (DE-588)4487701-8 gnd Smart-power-Bauelement (DE-588)4234779-8 gnd Elektrische Eigenschaft (DE-588)4193812-4 gnd Thermodynamische Eigenschaft (DE-588)4126056-9 gnd |
| subject_GND | (DE-588)4487701-8 (DE-588)4234779-8 (DE-588)4193812-4 (DE-588)4126056-9 (DE-588)4113937-9 |
| title | Single stress safe operating area of DMOS transistors integrated in smart power technologies |
| title_auth | Single stress safe operating area of DMOS transistors integrated in smart power technologies |
| title_exact_search | Single stress safe operating area of DMOS transistors integrated in smart power technologies |
| title_exact_search_txtP | Single stress safe operating area of DMOS transistors integrated in smart power technologies |
| title_full | Single stress safe operating area of DMOS transistors integrated in smart power technologies Marie Denison |
| title_fullStr | Single stress safe operating area of DMOS transistors integrated in smart power technologies Marie Denison |
| title_full_unstemmed | Single stress safe operating area of DMOS transistors integrated in smart power technologies Marie Denison |
| title_short | Single stress safe operating area of DMOS transistors integrated in smart power technologies |
| title_sort | single stress safe operating area of dmos transistors integrated in smart power technologies |
| topic | DMOS-FET (DE-588)4487701-8 gnd Smart-power-Bauelement (DE-588)4234779-8 gnd Elektrische Eigenschaft (DE-588)4193812-4 gnd Thermodynamische Eigenschaft (DE-588)4126056-9 gnd |
| topic_facet | DMOS-FET Smart-power-Bauelement Elektrische Eigenschaft Thermodynamische Eigenschaft Hochschulschrift |
| work_keys_str_mv | AT denisonmarie singlestresssafeoperatingareaofdmostransistorsintegratedinsmartpowertechnologies |