Priority programme of the Deutsche Forschungsgemeinschaft group III-nitrides and their heterostructures: growth, characterization and applications
Gespeichert in:
| Körperschaft: | |
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| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Wiley-VCH
2003
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben. - In: Physica status solidi : C, Conferences and critical reviews ; 0 (2003),6 |
| Beschreibung: | S. 1568 - 1951 |
| ISBN: | 3527404759 |
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| adam_text | IF * LII*|LJ|L|BIJ 1 V H LBLLHLBIILILI^FCAL3
|WWW.PHYSICA-STATUS-SOLIDI.COM CONFERENCES AND CRITICAL REVIEWS
EDITOR-IN-CHIEF MARTIN STUTZMANN, GARCHING REGIONAL EDITORS MARTIN S.
BRANDT, GARCHING PETER DEAK, BUDAPEST JOSE ROBERTO LEITE, SAO PAULO JOHN
I. B. WILSON, EDINBURGH MANAGING EDITOR STEFAN HILDEBRANDT, BERLIN
PRIORITY PROGRAMME OF THE DEUTSCHE FORSCHUNGSGEMEINSCHAFT GROUP
ILL-NITRIDES AND THEIR HETEROSTRUCTURES: GROWTH, CHARACTERIZATION AND
APPLICATIONS GUEST EDITORS FRIEDHELM BECHSTEDT, BRUNO K. MEYER, AND
MARTIN STUTZMANN 0 6 2003 )WILEY-VCH TECHN1SCHE NFORMATIONSBIBLIOTHEK
UNIVERSITATSBIBLIOTHEK HANNOVER CONTENTS VISIT OUR HOMEPAGE ON:
HTTP://WWW.PHYSICA-STATUS-SOLIDI.COM FULL TEXT ON:
HTTP://WWW.INTERSCIENCE.WILEY.COM NOTE FROM THE PUBLISHER: THIS ISSUE OF
PHYSICA STATUS SOLIDI (C) IS THE FIRST WHICH HAS BEEN PRODUCED FROM
PUBLICA- TION-READY MANUSCRIPT FILES, WRITTEN BY THE AUTHORS USING THE
PROVIDED WORD OR LATEX TEMPLATES. REVIEW ARTICLES GROUP ILL-NITRIDES AND
THEIR HETEROSTRUCTURES: GROWTH, CHARACTERIZATION AND APPLICATIONS
PREFACE 1569 DEPOSITION AND STRUCTURAL PROPERTIES GROWTH OF GAN
QUASI-SUBSTRATES BY HYDRIDE VAPOR PHASE EPITAXY WEI ZHANG AND B. K.
MEYER (C) 1571-1582 METALORGANIC CHEMICAL VAPOR PHASE EPITAXY OF
GALLIUM-NITRIDE ON SILICON A. DADGAR, A. STRITTMATTER, J. BIASING, M.
POSCHENRIEDER, O. CONTRERAS, P. VEIT, T. RIEMANN, F. BERTRAM, A. REIHER,
A. KRTSCHIL, A. DIEZ, T. HEMPEL, T. FINGER, A. KASIC, M. SCHUBERT, D.
BIMBERG, F. A. PONCE, J. CHRISTEN, AND A. KROST (C) 1583-1606 MOLECULAR
BEAM EPITAXY OF CUBIC ILL-NITRIDES ON GAAS SUBSTRATES D. J. AS, D.
SCHIKORA, AND K. LISCHKA (C) 1607-1626 FREESTANDING GAN-SUBSTRATES AND
DEVICES CLAUDIO R. MISKYS, MICHAEL K. KELLY, OLIVER AMBACHER, AND MARTIN
STUTZMANN (C) 1627-1650 SURFACTANTS AND ANTISURFACTANTS ON
GROUP-III-NITRIDE SURFACES J.NEUGEBAUER (C) 1651-1667 INDIUM
DISTRIBUTION IN EPITAXIALLY GROWN INGAN LAYERS ANALYZED BY TRANSMISSION
ELECTRON MICROS- COPY D. GERTHSEN, E. HAHN, B. NEUBAUER, V. POTIN, A.
ROSENAUER, AND M. SCHOWALTER (C) 1668-1683 A THEORETICAL INVESTIGATION
OF DISLOCATIONS IN CUBIC AND HEXAGONAL GALLIUM NITRIDE A. T. BLUMENAU,
C. J. FALL, J. EISNER, R. JONES, M. I. HEGGIE, AND T. FRAUENHEIM (C)
1684-1709 LATTICE DYNAMICS IN GAN AND A1N PROBED WITH FIRST- AND
SECOND-ORDER RAMAN SPECTROSCOPY U. HABOECK, H. SIEGLE, A. HOFFMANN, AND
C. THOMSEN (C) 1710-1731 ELECTRONIC AND OPTICAL PROPERTIES ELECTRONIC
AND VIBRATIONAL PROPERTIES OF GROUP-ILL NITRIDES: AB INITIO STUDIES F.
BECHSTEDT, J. FURTHMULLER, AND J.-M. WAGNER (C) 1732-1749 PHONONS AND
FREE-CARRIER PROPERTIES OF BINARY, TERNARY, AND QUATERNARY GROUP-ILL
NITRIDE LAYERS MEASURED BY INFRARED SPECTROSCOPIC ELLIPSOMETRY A. KASIC,
M. SCHUBERT, J. OFF, B. KUHN, F. SCHOLZ, S. EINFELDT, T. BOTTCHER, D.
HOMMEL, D. J. AS, U. KOHLER, A. DADGAR, A. KROST, Y. SAITO, Y. NANISHI,
M. R. CORREIA, S. PEREIRA, V. DARAKCHIEVA, B. MONEMAR, H. AMANO, I.
AKASAKI, AND G. WAGNER (C) 1750-1769 1568 CONTENTS MG IN GAN: THE
STRUCTURE OF THE ACCEPTOR AND THE ELECTRICAL ACTIVITY H. ALVES, F.
LEITER, D. PFISTERER, D. M. HOFMANN, B. K. MEYER, S. EINFELD, H. HEINKE,
ANDD.HOMMEL (C) 1770-1782 LOCAL VIBRATIONAL MODES AND COMPENSATION
EFFECTS IN MG-DOPED GAN A. HOFFMANN, A. KASCHNER, AND C. THOMSEN (C)
1783-1794 OPTICAL MICRO-CHARACTERIZATION OF GROUP-III-NITRIDES:
CORRELATION OF STRUCTURAL, ELECTRONIC AND OPTI- CAL PROPERTIES J.
CHRISTEN, T. RIEMANN, F. BERTRAM, D. RUDLOFF, P. FISCHER, A. KASCHNER,
U. HABOECK, A. HOFFMANN, AND C. THOMSEN (C) 1795-1815 OPTICAL PROPERTIES
OF NITRIDE HETEROSTRUCTURES ANDREAS HANGLEITER (C) 1816-1834 THE ORIGIN
OF THE PL PHOTOLUMINESCENCE STOKES SHIFT IN TERNARY GROUP-ILL NITRIDES:
FIELD EFFECTS AND LOCALIZATION M. STRASSBURG, A. HOFFMANN, J. HOIST, J.
CHRISTEN, T. RIEMANN, F. BERTRAM, AND P. FISCHER . (C) 1835-1845 DEVICES
AND DEVICE ISSUES GAN BASED LASER DIODES - EPITAXIAL GROWTH AND DEVICE
FABRICATION T. BOTTCHER, S. FIGGE, S. EINFELDT, R. CHIERCHIA, R. KROGER,
CH. PETTER, CH. ZELLWEGER, H.-J. BTTHLMANN, M. DIELTELBERG, D. RUDLOFF,
J. CHRISTEN, H. HEINKE, P. L. RYDER, M. ILEGEMS, AND D. HOMMEL (C)
1846-1859 OPTICAL GAIN, GAIN SATURATION, AND WAVEGUIDING IN GROUP
ILL-NITRIDE HETEROSTRUCTURES M. R6WE, M. VEHSE, P. MICHLER, J. GUTOWSKI,
S. HEPPEL, AND A. HANGLEITER (C) 1860-1877 ELECTRONICS AND SENSORS BASED
ON PYROELECTRIC ALGAN/GAN HETEROSTRUCTURES O. AMBACHER, M. EICKHOFF, A.
LINK, M. HERMANN, M. STUTZMANN, F. BERNARDINI, V. FIORENTINI, Y.
SMORCHKOVA, J. SPECK, U. MISHRA, W. SCHAFF, V. TILAK, AND L.F.EASTMAN
(C) 1878-1907 ELECTRONICS AND SENSORS BASED ON PYROELECTRIC ALGAN/GAN
HETEROSTRUCTURES - PART B: SENSOR APPLICATIONS M. EICKHOFF, J. SCHALWIG,
G. STEINHOFF, O. WEIDEMANN, L. GORGENS, R. NEUBERGER, M. HERMANN, B.
BAUR, G. MULLER, O. AMBACHER, AND M. STUTZMANN (C) 1908-1918 INFLUENCE
OF POLARIZATION ON THE PROPERTIES OF GAN BASED FET STRUCTURES M.
NEUBURGER, I. DAUMILLER, M. KUNZE, M. SEYBOTH, T. JENKINS, J. VAN
NOSTRAND, AND E.KOHN (C) 1919-1939 GALLIUM-NITRIDE-BASED DEVICES ON
SILICON A. DADGAR, M. POSCHENRIEDER, I. DAUMILLER, M. KUNZE, A.
STRITTMATTER, T. RIEMANN, F. BERTRAM, J. BIASING, F. SCHULZE, A. REIHER,
A. KRTSCHIL, O. CONTRERAS, A. KALUZA, A. MODLICH, M. KAMP, L. REIFIMANN,
A. DIEZ, J. CHRISTEN, F.A. PONCE, D. BIMBERG, E. KOHN, AND A. KROST (C)
1940-1949 DOI: THE FASTEST WAY TO FIND AN ARTICLE ONLINE IS THE DIGITAL
OBJECT IDENTIFIER (DOI). STARTING WITH VOL. 0, NO. 2 (2003), DOIS HAVE
BEEN PRINTED IN THE HEADER OF THE FIRST PAGE OF EVERY ARTICLE. ON THE
WWW, ONE CAN FIND AN ARTICLE FOR EXAMPLE WITH A DOI OF
10.1002/PSSC.200306190 AT HTTP://DX.DOI.ORG/1 0.1002/PSSC.200306190.
PLEASE USE THE DOI OF THE ARTICLE TO LINK FROM YOUR HOME PAGE TO THE
ARTICLES IN WILEY LNTERSCIENCE. THE DOI IS A RESULT OF A CROSS-PUBLISHER
INITIATIVE TO CREATE A SYSTEM FOR THE PERSISTENT IDENTIFICATION OF
DOCUMENTS ON DIGITAL NETWORKS. MORE INFORMATION IS AVAILABLE FROM
WWW.DOI.ORG.
|
| adam_txt |
IF * LII*|LJ|L|BIJ 1 V H LBLLHLBIILILI^FCAL3
|WWW.PHYSICA-STATUS-SOLIDI.COM CONFERENCES AND CRITICAL REVIEWS
EDITOR-IN-CHIEF MARTIN STUTZMANN, GARCHING REGIONAL EDITORS MARTIN S.
BRANDT, GARCHING PETER DEAK, BUDAPEST JOSE ROBERTO LEITE, SAO PAULO JOHN
I. B. WILSON, EDINBURGH MANAGING EDITOR STEFAN HILDEBRANDT, BERLIN
PRIORITY PROGRAMME OF THE DEUTSCHE FORSCHUNGSGEMEINSCHAFT GROUP
ILL-NITRIDES AND THEIR HETEROSTRUCTURES: GROWTH, CHARACTERIZATION AND
APPLICATIONS GUEST EDITORS FRIEDHELM BECHSTEDT, BRUNO K. MEYER, AND
MARTIN STUTZMANN 0 6 2003 )WILEY-VCH TECHN1SCHE 'NFORMATIONSBIBLIOTHEK
UNIVERSITATSBIBLIOTHEK HANNOVER CONTENTS VISIT OUR HOMEPAGE ON:
HTTP://WWW.PHYSICA-STATUS-SOLIDI.COM FULL TEXT ON:
HTTP://WWW.INTERSCIENCE.WILEY.COM NOTE FROM THE PUBLISHER: THIS ISSUE OF
PHYSICA STATUS SOLIDI (C) IS THE FIRST WHICH HAS BEEN PRODUCED FROM
PUBLICA- TION-READY MANUSCRIPT FILES, WRITTEN BY THE AUTHORS USING THE
PROVIDED WORD OR LATEX TEMPLATES. REVIEW ARTICLES GROUP ILL-NITRIDES AND
THEIR HETEROSTRUCTURES: GROWTH, CHARACTERIZATION AND APPLICATIONS
PREFACE 1569 DEPOSITION AND STRUCTURAL PROPERTIES GROWTH OF GAN
QUASI-SUBSTRATES BY HYDRIDE VAPOR PHASE EPITAXY WEI ZHANG AND B. K.
MEYER (C) 1571-1582 METALORGANIC CHEMICAL VAPOR PHASE EPITAXY OF
GALLIUM-NITRIDE ON SILICON A. DADGAR, A. STRITTMATTER, J. BIASING, M.
POSCHENRIEDER, O. CONTRERAS, P. VEIT, T. RIEMANN, F. BERTRAM, A. REIHER,
A. KRTSCHIL, A. DIEZ, T. HEMPEL, T. FINGER, A. KASIC, M. SCHUBERT, D.
BIMBERG, F. A. PONCE, J. CHRISTEN, AND A. KROST (C) 1583-1606 MOLECULAR
BEAM EPITAXY OF CUBIC ILL-NITRIDES ON GAAS SUBSTRATES D. J. AS, D.
SCHIKORA, AND K. LISCHKA (C) 1607-1626 FREESTANDING GAN-SUBSTRATES AND
DEVICES CLAUDIO R. MISKYS, MICHAEL K. KELLY, OLIVER AMBACHER, AND MARTIN
STUTZMANN (C) 1627-1650 SURFACTANTS AND ANTISURFACTANTS ON
GROUP-III-NITRIDE SURFACES J.NEUGEBAUER (C) 1651-1667 INDIUM
DISTRIBUTION IN EPITAXIALLY GROWN INGAN LAYERS ANALYZED BY TRANSMISSION
ELECTRON MICROS- COPY D. GERTHSEN, E. HAHN, B. NEUBAUER, V. POTIN, A.
ROSENAUER, AND M. SCHOWALTER (C) 1668-1683 A THEORETICAL INVESTIGATION
OF DISLOCATIONS IN CUBIC AND HEXAGONAL GALLIUM NITRIDE A. T. BLUMENAU,
C. J. FALL, J. EISNER, R. JONES, M. I. HEGGIE, AND T. FRAUENHEIM (C)
1684-1709 LATTICE DYNAMICS IN GAN AND A1N PROBED WITH FIRST- AND
SECOND-ORDER RAMAN SPECTROSCOPY U. HABOECK, H. SIEGLE, A. HOFFMANN, AND
C. THOMSEN (C) 1710-1731 ELECTRONIC AND OPTICAL PROPERTIES ELECTRONIC
AND VIBRATIONAL PROPERTIES OF GROUP-ILL NITRIDES: AB INITIO STUDIES F.
BECHSTEDT, J. FURTHMULLER, AND J.-M. WAGNER (C) 1732-1749 PHONONS AND
FREE-CARRIER PROPERTIES OF BINARY, TERNARY, AND QUATERNARY GROUP-ILL
NITRIDE LAYERS MEASURED BY INFRARED SPECTROSCOPIC ELLIPSOMETRY A. KASIC,
M. SCHUBERT, J. OFF, B. KUHN, F. SCHOLZ, S. EINFELDT, T. BOTTCHER, D.
HOMMEL, D. J. AS, U. KOHLER, A. DADGAR, A. KROST, Y. SAITO, Y. NANISHI,
M. R. CORREIA, S. PEREIRA, V. DARAKCHIEVA, B. MONEMAR, H. AMANO, I.
AKASAKI, AND G. WAGNER (C) 1750-1769 1568 CONTENTS MG IN GAN: THE
STRUCTURE OF THE ACCEPTOR AND THE ELECTRICAL ACTIVITY H. ALVES, F.
LEITER, D. PFISTERER, D. M. HOFMANN, B. K. MEYER, S. EINFELD, H. HEINKE,
ANDD.HOMMEL (C) 1770-1782 LOCAL VIBRATIONAL MODES AND COMPENSATION
EFFECTS IN MG-DOPED GAN A. HOFFMANN, A. KASCHNER, AND C. THOMSEN (C)
1783-1794 OPTICAL MICRO-CHARACTERIZATION OF GROUP-III-NITRIDES:
CORRELATION OF STRUCTURAL, ELECTRONIC AND OPTI- CAL PROPERTIES J.
CHRISTEN, T. RIEMANN, F. BERTRAM, D. RUDLOFF, P. FISCHER, A. KASCHNER,
U. HABOECK, A. HOFFMANN, AND C. THOMSEN (C) 1795-1815 OPTICAL PROPERTIES
OF NITRIDE HETEROSTRUCTURES ANDREAS HANGLEITER (C) 1816-1834 THE ORIGIN
OF THE PL PHOTOLUMINESCENCE STOKES SHIFT IN TERNARY GROUP-ILL NITRIDES:
FIELD EFFECTS AND LOCALIZATION M. STRASSBURG, A. HOFFMANN, J. HOIST, J.
CHRISTEN, T. RIEMANN, F. BERTRAM, AND P. FISCHER . (C) 1835-1845 DEVICES
AND DEVICE ISSUES GAN BASED LASER DIODES - EPITAXIAL GROWTH AND DEVICE
FABRICATION T. BOTTCHER, S. FIGGE, S. EINFELDT, R. CHIERCHIA, R. KROGER,
CH. PETTER, CH. ZELLWEGER, H.-J. BTTHLMANN, M. DIELTELBERG, D. RUDLOFF,
J. CHRISTEN, H. HEINKE, P. L. RYDER, M. ILEGEMS, AND D. HOMMEL (C)
1846-1859 OPTICAL GAIN, GAIN SATURATION, AND WAVEGUIDING IN GROUP
ILL-NITRIDE HETEROSTRUCTURES M. R6WE, M. VEHSE, P. MICHLER, J. GUTOWSKI,
S. HEPPEL, AND A. HANGLEITER (C) 1860-1877 ELECTRONICS AND SENSORS BASED
ON PYROELECTRIC ALGAN/GAN HETEROSTRUCTURES O. AMBACHER, M. EICKHOFF, A.
LINK, M. HERMANN, M. STUTZMANN, F. BERNARDINI, V. FIORENTINI, Y.
SMORCHKOVA, J. SPECK, U. MISHRA, W. SCHAFF, V. TILAK, AND L.F.EASTMAN
(C) 1878-1907 ELECTRONICS AND SENSORS BASED ON PYROELECTRIC ALGAN/GAN
HETEROSTRUCTURES - PART B: SENSOR APPLICATIONS M. EICKHOFF, J. SCHALWIG,
G. STEINHOFF, O. WEIDEMANN, L. GORGENS, R. NEUBERGER, M. HERMANN, B.
BAUR, G. MULLER, O. AMBACHER, AND M. STUTZMANN (C) 1908-1918 INFLUENCE
OF POLARIZATION ON THE PROPERTIES OF GAN BASED FET STRUCTURES M.
NEUBURGER, I. DAUMILLER, M. KUNZE, M. SEYBOTH, T. JENKINS, J. VAN
NOSTRAND, AND E.KOHN (C) 1919-1939 GALLIUM-NITRIDE-BASED DEVICES ON
SILICON A. DADGAR, M. POSCHENRIEDER, I. DAUMILLER, M. KUNZE, A.
STRITTMATTER, T. RIEMANN, F. BERTRAM, J. BIASING, F. SCHULZE, A. REIHER,
A. KRTSCHIL, O. CONTRERAS, A. KALUZA, A. MODLICH, M. KAMP, L. REIFIMANN,
A. DIEZ, J. CHRISTEN, F.A. PONCE, D. BIMBERG, E. KOHN, AND A. KROST (C)
1940-1949 DOI: THE FASTEST WAY TO FIND AN ARTICLE ONLINE IS THE DIGITAL
OBJECT IDENTIFIER (DOI). STARTING WITH VOL. 0, NO. 2 (2003), DOIS HAVE
BEEN PRINTED IN THE HEADER OF THE FIRST PAGE OF EVERY ARTICLE. ON THE
WWW, ONE CAN FIND AN ARTICLE FOR EXAMPLE WITH A DOI OF
10.1002/PSSC.200306190 AT HTTP://DX.DOI.ORG/1 0.1002/PSSC.200306190.
PLEASE USE THE DOI OF THE ARTICLE TO LINK FROM YOUR HOME PAGE TO THE
ARTICLES IN WILEY LNTERSCIENCE. THE DOI IS A RESULT OF A CROSS-PUBLISHER
INITIATIVE TO CREATE A SYSTEM FOR THE PERSISTENT IDENTIFICATION OF
DOCUMENTS ON DIGITAL NETWORKS. MORE INFORMATION IS AVAILABLE FROM
WWW.DOI.ORG. |
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| ctrlnum | (OCoLC)248794780 (DE-599)BVBBV021975728 |
| format | Book |
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| id | DE-604.BV021975728 |
| illustrated | Not Illustrated |
| index_date | 2024-07-02T16:09:41Z |
| indexdate | 2024-07-09T20:48:36Z |
| institution | BVB |
| institution_GND | (DE-588)2007744-0 |
| isbn | 3527404759 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015190867 |
| oclc_num | 248794780 |
| open_access_boolean | |
| owner | DE-706 |
| owner_facet | DE-706 |
| physical | S. 1568 - 1951 |
| publishDate | 2003 |
| publishDateSearch | 2003 |
| publishDateSort | 2003 |
| publisher | Wiley-VCH |
| record_format | marc |
| spelling | Deutsche Forschungsgemeinschaft Verfasser (DE-588)2007744-0 aut Priority programme of the Deutsche Forschungsgemeinschaft group III-nitrides and their heterostructures growth, characterization and applications Wiley-VCH 2003 S. 1568 - 1951 txt rdacontent n rdamedia nc rdacarrier Literaturangaben. - In: Physica status solidi : C, Conferences and critical reviews ; 0 (2003),6 Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Heterostruktur (DE-588)4123378-5 s DE-604 Drei-Fünf-Halbleiter (DE-588)4150649-2 s Nitride (DE-588)4171929-3 s Bechstedt, Friedhelm Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015190867&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Priority programme of the Deutsche Forschungsgemeinschaft group III-nitrides and their heterostructures growth, characterization and applications Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Nitride (DE-588)4171929-3 gnd Heterostruktur (DE-588)4123378-5 gnd |
| subject_GND | (DE-588)4150649-2 (DE-588)4171929-3 (DE-588)4123378-5 |
| title | Priority programme of the Deutsche Forschungsgemeinschaft group III-nitrides and their heterostructures growth, characterization and applications |
| title_auth | Priority programme of the Deutsche Forschungsgemeinschaft group III-nitrides and their heterostructures growth, characterization and applications |
| title_exact_search | Priority programme of the Deutsche Forschungsgemeinschaft group III-nitrides and their heterostructures growth, characterization and applications |
| title_exact_search_txtP | Priority programme of the Deutsche Forschungsgemeinschaft group III-nitrides and their heterostructures growth, characterization and applications |
| title_full | Priority programme of the Deutsche Forschungsgemeinschaft group III-nitrides and their heterostructures growth, characterization and applications |
| title_fullStr | Priority programme of the Deutsche Forschungsgemeinschaft group III-nitrides and their heterostructures growth, characterization and applications |
| title_full_unstemmed | Priority programme of the Deutsche Forschungsgemeinschaft group III-nitrides and their heterostructures growth, characterization and applications |
| title_short | Priority programme of the Deutsche Forschungsgemeinschaft group III-nitrides and their heterostructures |
| title_sort | priority programme of the deutsche forschungsgemeinschaft group iii nitrides and their heterostructures growth characterization and applications |
| title_sub | growth, characterization and applications |
| topic | Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Nitride (DE-588)4171929-3 gnd Heterostruktur (DE-588)4123378-5 gnd |
| topic_facet | Drei-Fünf-Halbleiter Nitride Heterostruktur |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015190867&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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