Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool:
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Abschlussarbeit Buch |
Sprache: | German |
Veröffentlicht: |
Aachen
Shaker
2002
|
Schriftenreihe: | Berichte aus der Halbleitertechnik
|
Schlagworte: | |
Beschreibung: | III, 111 S. Ill., graph. Darst. |
ISBN: | 3826597915 |
Internformat
MARC
LEADER | 00000nam a2200000zc 4500 | ||
---|---|---|---|
001 | BV021964317 | ||
003 | DE-604 | ||
005 | 20220525 | ||
007 | t | ||
008 | 020201s2002 ad|| m||| 00||| ger d | ||
020 | |a 3826597915 |9 3-8265-9791-5 | ||
035 | |a (OCoLC)76364736 | ||
035 | |a (DE-599)BVBBV021964317 | ||
040 | |a DE-604 |b ger | ||
041 | 0 | |a ger | |
049 | |a DE-706 | ||
100 | 1 | |a Graßl, Andreas |e Verfasser |4 aut | |
245 | 1 | 0 | |a Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool |c Andreas Graßl |
264 | 1 | |a Aachen |b Shaker |c 2002 | |
300 | |a III, 111 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a Berichte aus der Halbleitertechnik | |
502 | |a Zugl.: Neubiberg, Univ. der Bundeswehr München, Diss., 2001 | ||
650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Chip |0 (DE-588)4197163-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Siliciumnitrid |0 (DE-588)4127841-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Polykristall |0 (DE-588)4188261-1 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Gate |g Elektronik |0 (DE-588)4269385-8 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Fertigung |0 (DE-588)4016899-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Systemintegration |0 (DE-588)4464875-3 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Dünne Schicht |0 (DE-588)4136925-7 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a CVD-Verfahren |0 (DE-588)4009846-1 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
689 | 0 | 0 | |a Gate |g Elektronik |0 (DE-588)4269385-8 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a Systemintegration |0 (DE-588)4464875-3 |D s |
689 | 1 | |5 DE-604 | |
689 | 2 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 2 | 1 | |a CVD-Verfahren |0 (DE-588)4009846-1 |D s |
689 | 2 | 2 | |a Dünne Schicht |0 (DE-588)4136925-7 |D s |
689 | 2 | 3 | |a Silicium |0 (DE-588)4077445-4 |D s |
689 | 2 | 4 | |a Polykristall |0 (DE-588)4188261-1 |D s |
689 | 2 | |8 1\p |5 DE-604 | |
689 | 3 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 3 | 1 | |a CVD-Verfahren |0 (DE-588)4009846-1 |D s |
689 | 3 | 2 | |a Dünne Schicht |0 (DE-588)4136925-7 |D s |
689 | 3 | 3 | |a Siliciumnitrid |0 (DE-588)4127841-0 |D s |
689 | 3 | |8 2\p |5 DE-604 | |
689 | 4 | 0 | |a Chip |0 (DE-588)4197163-2 |D s |
689 | 4 | 1 | |a Fertigung |0 (DE-588)4016899-2 |D s |
689 | 4 | 2 | |a CVD-Verfahren |0 (DE-588)4009846-1 |D s |
689 | 4 | |8 3\p |5 DE-604 | |
689 | 5 | 0 | |a Systemintegration |0 (DE-588)4464875-3 |D s |
689 | 5 | |5 DE-604 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-015179467 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804135933251944448 |
---|---|
adam_txt | |
any_adam_object | |
any_adam_object_boolean | |
author | Graßl, Andreas |
author_facet | Graßl, Andreas |
author_role | aut |
author_sort | Graßl, Andreas |
author_variant | a g ag |
building | Verbundindex |
bvnumber | BV021964317 |
ctrlnum | (OCoLC)76364736 (DE-599)BVBBV021964317 |
format | Thesis Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02737nam a2200697zc 4500</leader><controlfield tag="001">BV021964317</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20220525 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">020201s2002 ad|| m||| 00||| ger d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3826597915</subfield><subfield code="9">3-8265-9791-5</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)76364736</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV021964317</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-706</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Graßl, Andreas</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool</subfield><subfield code="c">Andreas Graßl</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Aachen</subfield><subfield code="b">Shaker</subfield><subfield code="c">2002</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">III, 111 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Berichte aus der Halbleitertechnik</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: Neubiberg, Univ. der Bundeswehr München, Diss., 2001</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Chip</subfield><subfield code="0">(DE-588)4197163-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumnitrid</subfield><subfield code="0">(DE-588)4127841-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Polykristall</subfield><subfield code="0">(DE-588)4188261-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Gate</subfield><subfield code="g">Elektronik</subfield><subfield code="0">(DE-588)4269385-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Fertigung</subfield><subfield code="0">(DE-588)4016899-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Systemintegration</subfield><subfield code="0">(DE-588)4464875-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Gate</subfield><subfield code="g">Elektronik</subfield><subfield code="0">(DE-588)4269385-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Systemintegration</subfield><subfield code="0">(DE-588)4464875-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="1"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="2"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="3"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="4"><subfield code="a">Polykristall</subfield><subfield code="0">(DE-588)4188261-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2="1"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2="2"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2="3"><subfield code="a">Siliciumnitrid</subfield><subfield code="0">(DE-588)4127841-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="4" ind2="0"><subfield code="a">Chip</subfield><subfield code="0">(DE-588)4197163-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2="1"><subfield code="a">Fertigung</subfield><subfield code="0">(DE-588)4016899-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2="2"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2=" "><subfield code="8">3\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="5" ind2="0"><subfield code="a">Systemintegration</subfield><subfield code="0">(DE-588)4464875-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="5" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-015179467</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
genre_facet | Hochschulschrift |
id | DE-604.BV021964317 |
illustrated | Illustrated |
index_date | 2024-07-02T16:08:45Z |
indexdate | 2024-07-09T20:48:22Z |
institution | BVB |
isbn | 3826597915 |
language | German |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015179467 |
oclc_num | 76364736 |
open_access_boolean | |
owner | DE-706 |
owner_facet | DE-706 |
physical | III, 111 S. Ill., graph. Darst. |
publishDate | 2002 |
publishDateSearch | 2002 |
publishDateSort | 2002 |
publisher | Shaker |
record_format | marc |
series2 | Berichte aus der Halbleitertechnik |
spelling | Graßl, Andreas Verfasser aut Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool Andreas Graßl Aachen Shaker 2002 III, 111 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Berichte aus der Halbleitertechnik Zugl.: Neubiberg, Univ. der Bundeswehr München, Diss., 2001 Silicium (DE-588)4077445-4 gnd rswk-swf Chip (DE-588)4197163-2 gnd rswk-swf Siliciumnitrid (DE-588)4127841-0 gnd rswk-swf Polykristall (DE-588)4188261-1 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Gate Elektronik (DE-588)4269385-8 gnd rswk-swf Fertigung (DE-588)4016899-2 gnd rswk-swf Systemintegration (DE-588)4464875-3 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf CVD-Verfahren (DE-588)4009846-1 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Gate Elektronik (DE-588)4269385-8 s DE-604 Systemintegration (DE-588)4464875-3 s MOS-FET (DE-588)4207266-9 s CVD-Verfahren (DE-588)4009846-1 s Dünne Schicht (DE-588)4136925-7 s Silicium (DE-588)4077445-4 s Polykristall (DE-588)4188261-1 s 1\p DE-604 Siliciumnitrid (DE-588)4127841-0 s 2\p DE-604 Chip (DE-588)4197163-2 s Fertigung (DE-588)4016899-2 s 3\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Graßl, Andreas Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool Silicium (DE-588)4077445-4 gnd Chip (DE-588)4197163-2 gnd Siliciumnitrid (DE-588)4127841-0 gnd Polykristall (DE-588)4188261-1 gnd MOS-FET (DE-588)4207266-9 gnd Gate Elektronik (DE-588)4269385-8 gnd Fertigung (DE-588)4016899-2 gnd Systemintegration (DE-588)4464875-3 gnd Dünne Schicht (DE-588)4136925-7 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
subject_GND | (DE-588)4077445-4 (DE-588)4197163-2 (DE-588)4127841-0 (DE-588)4188261-1 (DE-588)4207266-9 (DE-588)4269385-8 (DE-588)4016899-2 (DE-588)4464875-3 (DE-588)4136925-7 (DE-588)4009846-1 (DE-588)4113937-9 |
title | Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool |
title_auth | Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool |
title_exact_search | Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool |
title_exact_search_txtP | Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool |
title_full | Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool Andreas Graßl |
title_fullStr | Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool Andreas Graßl |
title_full_unstemmed | Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool Andreas Graßl |
title_short | Chemical Vapour Deposition ( CVD ) für zukünftige Technologien in einem Cluster-Tool |
title_sort | chemical vapour deposition cvd fur zukunftige technologien in einem cluster tool |
topic | Silicium (DE-588)4077445-4 gnd Chip (DE-588)4197163-2 gnd Siliciumnitrid (DE-588)4127841-0 gnd Polykristall (DE-588)4188261-1 gnd MOS-FET (DE-588)4207266-9 gnd Gate Elektronik (DE-588)4269385-8 gnd Fertigung (DE-588)4016899-2 gnd Systemintegration (DE-588)4464875-3 gnd Dünne Schicht (DE-588)4136925-7 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
topic_facet | Silicium Chip Siliciumnitrid Polykristall MOS-FET Gate Elektronik Fertigung Systemintegration Dünne Schicht CVD-Verfahren Hochschulschrift |
work_keys_str_mv | AT graßlandreas chemicalvapourdepositioncvdfurzukunftigetechnologienineinemclustertool |