Special issue on high speed circuits: 1996 GaAs IC Symposium and 1996 Bipolar-BICMOS Circuits and Technology Meeting
Saved in:
| Format: | Conference Proceeding Book |
|---|---|
| Language: | English |
| Published: |
New York, NY
IEEE Corp. Office
1997
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| Subjects: | |
| Item Description: | Literaturangaben. - In: IEEE journal of solid-state circuits ; 32 (1997),9 |
| Physical Description: | S. 1371 - 1564 Ill., graph. Darst. |
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| 711 | 2 | |a GaAs IC Symposium |n 18 |d 1996 |c Orlando, Fla. |j Sonstige |0 (DE-588)5200368-1 |4 oth | |
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| id | DE-604.BV021941900 |
| illustrated | Illustrated |
| index_date | 2024-07-02T16:07:01Z |
| indexdate | 2024-07-09T20:47:53Z |
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| physical | S. 1371 - 1564 Ill., graph. Darst. |
| publishDate | 1997 |
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| publisher | IEEE Corp. Office |
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| spelling | Special issue on high speed circuits 1996 GaAs IC Symposium and 1996 Bipolar-BICMOS Circuits and Technology Meeting New York, NY IEEE Corp. Office 1997 S. 1371 - 1564 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben. - In: IEEE journal of solid-state circuits ; 32 (1997),9 CAD (DE-588)4069794-0 gnd rswk-swf CMOS-Schaltung (DE-588)4148111-2 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Modellierung (DE-588)4170297-9 gnd rswk-swf Bipolarschaltung (DE-588)4145667-1 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Galliumarsenid (DE-588)4019155-2 s DE-604 CAD (DE-588)4069794-0 s Halbleiterbauelement (DE-588)4113826-0 s Halbleiterphysik (DE-588)4113829-6 s Bipolarschaltung (DE-588)4145667-1 s CMOS-Schaltung (DE-588)4148111-2 s Modellierung (DE-588)4170297-9 s GaAs IC Symposium 18 1996 Orlando, Fla. Sonstige (DE-588)5200368-1 oth Bipolar BiCMOS Circuits and Technology Meeting 1996 Minneapolis, Minn. Sonstige (DE-588)5244944-0 oth |
| spellingShingle | Special issue on high speed circuits 1996 GaAs IC Symposium and 1996 Bipolar-BICMOS Circuits and Technology Meeting CAD (DE-588)4069794-0 gnd CMOS-Schaltung (DE-588)4148111-2 gnd Halbleiterphysik (DE-588)4113829-6 gnd Galliumarsenid (DE-588)4019155-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Modellierung (DE-588)4170297-9 gnd Bipolarschaltung (DE-588)4145667-1 gnd |
| subject_GND | (DE-588)4069794-0 (DE-588)4148111-2 (DE-588)4113829-6 (DE-588)4019155-2 (DE-588)4113826-0 (DE-588)4170297-9 (DE-588)4145667-1 (DE-588)1071861417 |
| title | Special issue on high speed circuits 1996 GaAs IC Symposium and 1996 Bipolar-BICMOS Circuits and Technology Meeting |
| title_auth | Special issue on high speed circuits 1996 GaAs IC Symposium and 1996 Bipolar-BICMOS Circuits and Technology Meeting |
| title_exact_search | Special issue on high speed circuits 1996 GaAs IC Symposium and 1996 Bipolar-BICMOS Circuits and Technology Meeting |
| title_exact_search_txtP | Special issue on high speed circuits 1996 GaAs IC Symposium and 1996 Bipolar-BICMOS Circuits and Technology Meeting |
| title_full | Special issue on high speed circuits 1996 GaAs IC Symposium and 1996 Bipolar-BICMOS Circuits and Technology Meeting |
| title_fullStr | Special issue on high speed circuits 1996 GaAs IC Symposium and 1996 Bipolar-BICMOS Circuits and Technology Meeting |
| title_full_unstemmed | Special issue on high speed circuits 1996 GaAs IC Symposium and 1996 Bipolar-BICMOS Circuits and Technology Meeting |
| title_short | Special issue on high speed circuits |
| title_sort | special issue on high speed circuits 1996 gaas ic symposium and 1996 bipolar bicmos circuits and technology meeting |
| title_sub | 1996 GaAs IC Symposium and 1996 Bipolar-BICMOS Circuits and Technology Meeting |
| topic | CAD (DE-588)4069794-0 gnd CMOS-Schaltung (DE-588)4148111-2 gnd Halbleiterphysik (DE-588)4113829-6 gnd Galliumarsenid (DE-588)4019155-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Modellierung (DE-588)4170297-9 gnd Bipolarschaltung (DE-588)4145667-1 gnd |
| topic_facet | CAD CMOS-Schaltung Halbleiterphysik Galliumarsenid Halbleiterbauelement Modellierung Bipolarschaltung Konferenzschrift |
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