High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths:
Saved in:
| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
1997
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| Subjects: | |
| Physical Description: | 117 S. graph. Darst. |
Staff View
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Record in the Search Index
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| illustrated | Illustrated |
| index_date | 2024-07-02T16:06:33Z |
| indexdate | 2024-07-09T20:47:45Z |
| institution | BVB |
| language | English |
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| physical | 117 S. graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
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| spelling | Ramgopal Rao, V. Verfasser (DE-588)1223941701 aut High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths V. Ramgopal Rao 1997 117 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Neubiberg, Univ. der Bundeswehr München, Diss. Kurzkanal-FET (DE-588)4207298-0 gnd rswk-swf Gate-Oxid (DE-588)4269383-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Niedrigtemperatur (DE-588)4417434-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content MOS-FET (DE-588)4207266-9 s Kurzkanal-FET (DE-588)4207298-0 s Gate-Oxid (DE-588)4269383-4 s Niedrigtemperatur (DE-588)4417434-2 s 1\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Ramgopal Rao, V. High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths Kurzkanal-FET (DE-588)4207298-0 gnd Gate-Oxid (DE-588)4269383-4 gnd MOS-FET (DE-588)4207266-9 gnd Niedrigtemperatur (DE-588)4417434-2 gnd |
| subject_GND | (DE-588)4207298-0 (DE-588)4269383-4 (DE-588)4207266-9 (DE-588)4417434-2 (DE-588)4113937-9 |
| title | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths |
| title_auth | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths |
| title_exact_search | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths |
| title_exact_search_txtP | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths |
| title_full | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths V. Ramgopal Rao |
| title_fullStr | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths V. Ramgopal Rao |
| title_full_unstemmed | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths V. Ramgopal Rao |
| title_short | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths |
| title_sort | high performance planar doped barrier silicon mosfets with sub 100 nm channel lengths |
| topic | Kurzkanal-FET (DE-588)4207298-0 gnd Gate-Oxid (DE-588)4269383-4 gnd MOS-FET (DE-588)4207266-9 gnd Niedrigtemperatur (DE-588)4417434-2 gnd |
| topic_facet | Kurzkanal-FET Gate-Oxid MOS-FET Niedrigtemperatur Hochschulschrift |
| work_keys_str_mv | AT ramgopalraov highperformanceplanardopedbarriersiliconmosfetswithsub100nmchannellengths |