Gallium arsenide processing techniques:
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | Undetermined |
Veröffentlicht: |
Dedham, MA
Artech House
1985
|
Ausgabe: | 2. print. |
Schlagworte: | |
Beschreibung: | XIII, 406 S. |
ISBN: | 0890061521 |
Internformat
MARC
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245 | 1 | 0 | |a Gallium arsenide processing techniques |
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Datensatz im Suchindex
_version_ | 1804135806326013952 |
---|---|
adam_txt | |
any_adam_object | |
any_adam_object_boolean | |
author | Williams, Ralph E. |
author_facet | Williams, Ralph E. |
author_role | aut |
author_sort | Williams, Ralph E. |
author_variant | r e w re rew |
building | Verbundindex |
bvnumber | BV021868274 |
classification_rvk | UP 3100 |
ctrlnum | (OCoLC)633746029 (DE-599)BVBBV021868274 |
discipline | Physik |
discipline_str_mv | Physik |
edition | 2. print. |
format | Book |
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id | DE-604.BV021868274 |
illustrated | Not Illustrated |
index_date | 2024-07-02T16:03:18Z |
indexdate | 2024-07-09T20:46:21Z |
institution | BVB |
isbn | 0890061521 |
language | Undetermined |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015084426 |
oclc_num | 633746029 |
open_access_boolean | |
owner | DE-706 |
owner_facet | DE-706 |
physical | XIII, 406 S. |
publishDate | 1985 |
publishDateSearch | 1985 |
publishDateSort | 1985 |
publisher | Artech House |
record_format | marc |
spelling | Williams, Ralph E. Verfasser aut Gallium arsenide processing techniques 2. print. Dedham, MA Artech House 1985 XIII, 406 S. txt rdacontent n rdamedia nc rdacarrier Kristallstruktur (DE-588)4136176-3 gnd rswk-swf Galliumarsenid-Bauelement (DE-588)4155861-3 gnd rswk-swf Elektrische Eigenschaft (DE-588)4193812-4 gnd rswk-swf Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 s DE-604 Galliumarsenid (DE-588)4019155-2 s Halbleitertechnologie (DE-588)4158814-9 s 1\p DE-604 Kristallstruktur (DE-588)4136176-3 s 2\p DE-604 Fotolithografie Halbleitertechnologie (DE-588)4174516-4 s 3\p DE-604 Kristallwachstum (DE-588)4123579-4 s 4\p DE-604 Elektrische Eigenschaft (DE-588)4193812-4 s 5\p DE-604 Galliumarsenid-Bauelement (DE-588)4155861-3 s 6\p DE-604 Lithografie Halbleitertechnologie (DE-588)4191584-7 s 7\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 5\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 6\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 7\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Williams, Ralph E. Gallium arsenide processing techniques Kristallstruktur (DE-588)4136176-3 gnd Galliumarsenid-Bauelement (DE-588)4155861-3 gnd Elektrische Eigenschaft (DE-588)4193812-4 gnd Kristallwachstum (DE-588)4123579-4 gnd Galliumarsenid (DE-588)4019155-2 gnd Halbleiterphysik (DE-588)4113829-6 gnd Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd |
subject_GND | (DE-588)4136176-3 (DE-588)4155861-3 (DE-588)4193812-4 (DE-588)4123579-4 (DE-588)4019155-2 (DE-588)4113829-6 (DE-588)4174516-4 (DE-588)4158814-9 (DE-588)4191584-7 |
title | Gallium arsenide processing techniques |
title_auth | Gallium arsenide processing techniques |
title_exact_search | Gallium arsenide processing techniques |
title_exact_search_txtP | Gallium arsenide processing techniques |
title_full | Gallium arsenide processing techniques |
title_fullStr | Gallium arsenide processing techniques |
title_full_unstemmed | Gallium arsenide processing techniques |
title_short | Gallium arsenide processing techniques |
title_sort | gallium arsenide processing techniques |
topic | Kristallstruktur (DE-588)4136176-3 gnd Galliumarsenid-Bauelement (DE-588)4155861-3 gnd Elektrische Eigenschaft (DE-588)4193812-4 gnd Kristallwachstum (DE-588)4123579-4 gnd Galliumarsenid (DE-588)4019155-2 gnd Halbleiterphysik (DE-588)4113829-6 gnd Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd |
topic_facet | Kristallstruktur Galliumarsenid-Bauelement Elektrische Eigenschaft Kristallwachstum Galliumarsenid Halbleiterphysik Fotolithografie Halbleitertechnologie Halbleitertechnologie Lithografie Halbleitertechnologie |
work_keys_str_mv | AT williamsralphe galliumarsenideprocessingtechniques |