Principles of semiconductor devices:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York [u.a.]
Oxford Univ. Press
2006
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| Schriftenreihe: | The Oxford series in electrical and computer engineering
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVIII, 588 S. Ill., graph. Darst. |
| ISBN: | 0195161130 9780195161137 |
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| 245 | 1 | 0 | |a Principles of semiconductor devices |c Sima Dimitrijev |
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Datensatz im Suchindex
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| adam_text | PRINCIPLES OF SEMICONDUCTOR DEVICES SIMA DIMITRIJEV GRIFFITH UNIVERSITY
NEW YORK * OXFORD OXFORD UNIVERSITY PRESS 2006 CONTENTS PREFACE XIII
PART I INTRODUCTION TO SEMICONDUCTORS 1 SEMICONDUCTOR CRYSTALS: THE
ATOMIC-BOND MODEL 3 1.1 CRYSTAL LATTICES 4 1.1.1 UNIT CELL 4 1.1.2
PLANES AND DIRECTIONS 7 1.1.3 ATOMIC BONDS 10 1.2 CURRENT CARRIERS 12
1.2.1 TWO TYPES OF CURRENT CARRIERS IN SEMICONDUCTORS 13 1.2.2 N-TYPE
AND P-TYPE DOPING 15 1.2.3 ELECTRONEUTRALITY EQUATION 17 1.2.4 ELECTRON
AND HOLE GENERATION AND RECOMBINATION IN THERMAL EQUILIBRIUM 18 * 1.3
BASICS OF CRYSTAL GROWTH AND DOPING TECHNIQUES 21 1.3.1 CRYSTAL-GROWTH
TECHNIQUES 21 1.3.2 DOPING TECHNIQUES 24 SUMMARY 26 PROBLEMS 28 REVIEW
QUESTIONS 30 INDICATES AN ADVANCED SECTION THAT CAN BE OMITTED WITHOUT
LOSS OF CONTINUITY. VI CONTENTS 2 QUANTUM MECHANICS AND THE ENERGY-BAND
MODEL 31 2.1 ELECTRONS AS WAVES 32 2.1.1 DE BROGLIE RELATIONSHIP BETWEEN
PARTICLE AND WAVE PROPERTIES 32 2.1.2 WAVE FUNCTION AND WAVE PACKET 33
2.1.3 SCHRODINGER EQUATION 38 2.2 ENERGY LEVELS IN ATOMS AND ENERGY
BANDS IN CRYSTALS 45 2.2.1 ATOMIC STRUCTURE 45 2.2.2 ENERGY BANDS IN
METALS 47 2.2.3 ENERGY GAP AND ENERGY BANDS IN SEMICONDUCTORS AND
INSULATORS 49 2.3 ELECTRONS AND HOLES AS PARTICLES 54 2.3.1 EFFECTIVE
MASS AND REAL E-K DIAGRAMS 54 2.3.2 THE QUESTION OF ELECTRON SIZE: THE
UNCERTAINTY PRINCIPLE 58 2.3.3 DENSITY OF ELECTRON STATES 62 2.4
POPULATION OF ELECTRON STATES: CONCENTRATIONS OF ELECTRONS AND HOLES 66
2.4.1 FERMI-DIRAC DISTRIBUTION 67 2.4.2 MAXWELL-BOLTZMANN APPROXIMATION
AND EFFECTIVE DENSITY OF STATES 72 2.4.3 FERMI POTENTIAL AND DOPING 78
2.4.4 NONEQUILIBRIUM CARRIER CONCENTRATIONS AND QUASI-FERMI LEVELS 85
SUMMARY 87 PROBLEMS 90 REVIEW QUESTIONS 94 3 DRIFT 97 3.1 ENERGY BANDS
WITH APPLIED ELECTRIC FIELD 97 3.1.1 ENERGY-BAND PRESENTATION OF DRIFT
CURRENT 98 3.1.2 RESISTANCE AND POWER DISSIPATION DUE TO CARRIER
SCATTERING 100 3.2 OHM S LAW, SHEET RESISTANCE, AND CONDUCTIVITY 100
3.2.1 DESIGNING INTEGRATED-CIRCUIT RESISTORS 101 3.2.2 DIFFERENTIAL FORM
OF OHM S LAW 107 3.2.3 CONDUCTIVITY INGREDIENTS 110 3.3 CARRIER MOBILITY
112 3.3.1 THERMAL AND DRIFT VELOCITIES 112 3.3.2 MOBILITY DEFINITION 115
3.3.3 SCATTERING TIME AND SCATTERING CROSS SECTION 116 3.3.4 MATHIESON S
RULE 118 *3.3.5 HALL EFFECT 123 CONTENTS VII SUMMARY 125 PROBLEMS 126
REVIEW QUESTIONS 129 4 DIFFUSION 130 4.1 DIFFUSION-CURRENT EQUATION 130
4.2 DIFFUSION COEFFICIENT 133 4.2.1 EINSTEIN RELATIONSHIP 133 4.2.2
HAYNES-SHOCKLEY EXPERIMENT 136 4.2.3 ARRHENIUS EQUATION 138 4.3 BASIC
CONTINUITY EQUATION 139 SUMMARY 144 PROBLEMS 145 REVIEW QUESTIONS 146 5
GENERATION AND RECOMBINATION 148 5.1 GENERATION AND RECOMBINATION
MECHANISMS 148 5.2 GENERAL FORM OF THE CONTINUITY EQUATION 151 5.2.1
RECOMBINATION AND GENERATION RATES 151 5.2.2 MINORITY-CARRIER LIFETIME
153 5.2.3 DIFFUSION LENGTH 156 *5.3 GENERATION AND RECOMBINATION PHYSICS
AND SHOCKLEY-READ-HALL (SRH) THEORY 157 5.3.1 CAPTURE AND EMISSION RATES
IN THERMAL EQUILIBRIUM 158 5.3.2 STEADY-STATE EQUATION FOR THE EFFECTIVE
THERMAL GENERATION- RECOMBINATION RATE 161 5.3.3 SPECIAL CASES 167 5.3.4
SURFACE GENERATION AND RECOMBINATION 174 SUMMARY 178 PROBLEMS 180 REVIEW
QUESTIONS 182 PART II FUNDAMENTAL DEVICE STRUCTURES 6 P-N JUNCTION 187
6.1 P-N JUNCTION PRINCIPLES 187 6.1.1 P-N JUNCTION IN THERMAL
EQUILIBRIUM: BUILT-IN VOLTAGE 187 6.1.2 REVERSE-BIASED P-N JUNCTION 191
VIII CONTENTS 6.1.3 FORWARD-BIASED P-N JUNCTION 193 6.1.4 BREAKDOWN
PHENOMENA 195 6.2 DC MODEL 199 6.2.1 BASIC CURRENT-VOLTAGE (I-V)
EQUATION 199 6.2.2 IMPORTANT SECOND-ORDER EFFECTS 207 6.2.3 TEMPERATURE
EFFECTS 211 6.3 CAPACITANCE OF REVERSE-BIASED P-N JUNCTION 213 6.3.1 C-V
DEPENDENCE 214 6.3.2 DEPLETION-LAYER WIDTH: SOLVING THE POISSON EQUATION
215 6.3.3 SPICE MODEL FOR THE DEPLETION-LAYER CAPACITANCE 228 6.4
STORED-CHARGE EFFECTS 228 6.4.1 STORED CHARGE AND TRANSIT TIME 228 6.4.2
RELATIONSHIP BETWEEN THE TRANSIT TIME AND THE MINORITY-CARRIER LIFETIME
229 6.4.3 SWITCHING CHARACTERISTICS: REVERSE-RECOVERY TIME 230 SUMMARY
232 PROBLEMS 235 REVIEW QUESTIONS 240 7 METAL-SEMICONDUCTOR CONTACT AND
MOS CAPACITOR 242 7.1 METAL-SEMICONDUCTOR CONTACT 243 7.1.1 SCHOTTKY
DIODE: RECTIFYING METAL-SEMICONDUCTOR CONTACT 243 7.1.2 OHMIC
METAL-SEMICONDUCTOR CONTACTS 251 7.2 MOS CAPACITOR 252 7.2.1 PROPERTIES
OF THE GATE OXIDE AND THE OXIDE-SEMICONDUCTOR INTERFACE 253 7.2.2 C-V
CURVE AND THE SURFACE-POTENTIAL DEPENDENCE ON GATE VOLTAGE 257 7.2.3
ENERGY-BAND DIAGRAMS 265 *7.2.4 FLAT-BAND CAPACITANCE AND DEBYE LENGTH
276 SUMMARY 279 PROBLEMS 280 REVIEW QUESTIONS 284 8 MOSFET 286 8.1
MOSFET PRINCIPLES 286 8.1.1 MOSFET STRUCTURE 286 8.1.2 MOSFET AS A
VOLTAGE-CONTROLLED SWITCH 289 CONTENTS IX 8.1.3 THE THRESHOLD VOLTAGE
AND THE BODY EFFECT 294 8.1.4 MOSFET AS A VOLTAGE-CONTROLLED CURRENT
SOURCE: MECHANISMS OF CURRENT SATURATION 298 8.2 PRINCIPAL
CURRENT-VOLTAGE CHARACTERISTICS AND EQUATIONS 302 8.2.1 SPICE LEVEL 1
MODEL 303 8.2.2 SPICE LEVEL 2 MODEL 306 8.2.3 SPICE LEVEL 3 MODEL:
PRINCIPAL EFFECTS 308 8.3 SECOND-ORDER EFFECTS 312 8.3.1 MOBILITY
REDUCTION WITH GATE VOLTAGE 312 8.3.2 VELOCITY SATURATION (MOBILITY
REDUCTION WITH DRAIN VOLTAGE) 313 8.3.3 FINITE OUTPUT RESISTANCE 314
8.3.4 THRESHOLD-VOLTAGE-RELATED SHORT-CHANNEL EFFECTS 316 8.3.5
THRESHOLD-VOLTAGE-RELATED NARROW-CHANNEL EFFECTS 318 8.3.6 SUBTHRESHOLD
CURRENT 318 8.4 NANOSCALE MOSFETS 320 8.4.1 DOWN-SCALING BENEFITS AND
RULES 321 8.4.2 LEAKAGE CURRENTS 323 8.4.3 ADVANCED MOSFETS 325 *8.4.4
RELIABILITY ISSUES 328 8.5 MOS-BASED MEMORY DEVICES 336 8.5.1 1C1T DRAM
CELL 337 8.5.2 FLASH-MEMORY CELL 338 SUMMARY 340 PROBLEMS 342 REVIEW
QUESTIONS 345 9 BJT 347 9.1 BJT PRINCIPLES 347 9.1.1 BJT AS A
VOLTAGE-CONTROLLED CURRENT SOURCE 348 9.1.2 BJT CURRENTS AND GAIN
DEFINITIONS 351 9.1.3 DEPENDENCE OF A AND /8 CURRENT GAINS ON
TECHNOLOGICAL PARAMETERS 355 9.1.4 THE FOUR MODES OF OPERATION: BJT AS A
SWITCH 360 9.1.5 COMPLEMENTARY BJT 365 9.1.6 BJT VERSUS MOSFET 366 9.2
PRINCIPAL CURRENT-VOLTAGE CHARACTERISTICS: EBERS-MOLL MODEL IN SPICE 368
9.2.1 INJECTION VERSION 368 9.2.2 TRANSPORT VERSION 369 9.2.3 SPICE
VERSION 371 CONTENTS 9.3 SECOND-ORDER EFFECTS 375 9.3.1 EARLY EFFECT:
FINITE DYNAMIC OUTPUT RESISTANCE 375 9.3.2 PARASITIC RESISTANCES 378
9.3.3 DEPENDENCE OF COMMON-EMITTER CURRENT GAIN ON TRANSISTOR CURRENT:
LOW-CURRENT EFFECTS 379 9.3.4 DEPENDENCE OF COMMON-EMITTER CURRENT GAIN
ON TRANSISTOR CURRENT: GUMMEL-POON MODEL FOR HIGH-CURRENT EFFECTS 380
9.4 HETEROJUNCTION BIPOLAR TRANSISTOR 383 SUMMARY 386 PROBLEMS 388
REVIEW QUESTIONS 391 PART 111 DEVICE TECH NOLOGY AN D ELECTRON ICS 10
INTEGRATED-CIRCUIT TECHNOLOGIES 395 10.1 A DIODE IN IC TECHNOLOGY 395
10.1.1 BASIC STRUCTURE 395 10.1.2 LITHOGRAPHY 396 10.1.3 PROCESS
SEQUENCE 398 10.1.4 DIFFUSION PROFILES 400 10.2 MOSFET TECHNOLOGIES 405
10.2.1 LOCAL OXIDATION OF SILICON (LOCOS) 405 10.2.2 NMOS TECHNOLOGY 406
10.2.3 BASIC CMOS TECHNOLOGY 414 10.2.4 SILICON-ON-INSULATOR (SOI)
TECHNOLOGY 422 10.3 BIPOLAR IC TECHNOLOGIES 423 10.3.1 IC STRUCTURE OF
NPN BJT 423 10.3.2 STANDARD BIPOLAR TECHNOLOGY PROCESS 425 10.3.3
IMPLEMENTATION OF PNP BJTS, RESISTORS, CAPACITORS, AND DIODES 429 10.3.4
LAYER MERGING 433 10.3.5 BICMOS TECHNOLOGY 436 SUMMARY 437 PROBLEMS 438
REVIEW QUESTIONS 441 11 DEVICE ELECTRONICS: EQUIVALENT CIRCUITS AND
SPICE PARAMETERS 442 11.1 DIODES 443 11.1.1 STATIC MODEL AND PARAMETERS
IN SPICE 443 11.1.2 LARGE-SIGNAL EQUIVALENT CIRCUIT IN SPICE 444
CONTENTS XI 11.1.3 PARAMETER MEASUREMENT 446 11.1.4 SMALL-SIGNAL
EQUIVALENT CIRCUIT 452 11.2 MOSFET 455 11.2.1 STATIC MODEL AND
PARAMETERS: LEVEL 3 IN SPICE 455 11.2.2 PARAMETER MEASUREMENT 460 11.2.3
LARGE-SIGNAL EQUIVALENT CIRCUIT AND DYNAMIC PARAMETERS IN SPICE 468
11.2.4 SIMPLE DIGITAL MODEL 470 11.2.5 SMALL-SIGNAL EQUIVALENT CIRCUIT
476 11.3 BJT 478 11.3.1 STATIC MODEL AND PARAMETERS: EBERS-MOLL AND
GUMMEL-POON LEVELS IN SPICE 478 11.3.2 PARAMETER MEASUREMENT 480 11.3.3
LARGE-SIGNAL EQUIVALENT CIRCUIT AND DYNAMIC PARAMETERS IN SPICE 485
11.3.4 SMALL-SIGNAL EQUIVALENT CIRCUIT 487 11.3.5 PARASITIC IC ELEMENTS
NOT INCLUDED IN DEVICE MODELS 489 SUMMARY 492 PROBLEMS 493 REVIEW
QUESTIONS 495 PART IV SPECIFIC DEVICES 12 PHOTONIC DEVICES 499 12.1
LIGHT-EMITTING DIODES (LED) 499 12.2 PHOTODETECTORS AND SOLAR CELLS 502
12.2.1 BIASING FOR PHOTODETECTOR AND SOLAR-CELL APPLICATIONS 502 12.2.2
CARRIER GENERATION IN PHOTODETECTORS AND SOLAR CELLS 504 12.2.3
PHOTOCURRENT EQUATION 506 12.3 LASERS 512 12.3.1 STIMULATED EMISSION,
INVERSION POPULATION, AND OTHER FUNDAMENTAL CONCEPTS 512 12.3.2 A
TYPICAL HETEROJUNCTION LASER 514 SUMMARY 516 PROBLEMS 517 REVIEW
QUESTIONS 518 13 MICROWAVE FETS AND DIODES 520 13.1 GALLIUM ARSENIDE
VERSUS SILICON 522 13.1.1 DIELECTRIC-SEMICONDUCTOR INTERFACE:
ENHANCEMENT VERSUS DEPLETION FETS 522 XII CONTENTS 13.1.2 ENERGY GAP 523
13.1.3 ELECTRON MOBILITY AND SATURATION VELOCITY 524 13.1.4 NEGATIVE
DYNAMIC RESISTANCE 525 13.2 JFET 525 13.2.1 JFET STRUCTURE 525 13.2.2
JFET CHARACTERISTICS 526 * 13.2.3 SPICE MODEL AND PARAMETERS 530 13.3
MESFET 533 13.3.1 MESFET STRUCTURE 533 13.3.2 MESFET CHARACTERISTICS 533
* 13.3.3 SPICE MODEL AND PARAMETERS 534 13.4 HEMT 536 13.4.1
TWO-DIMENSIONAL ELECTRON GAS (2DEG) 537 13.4.2 HEMT STRUCTURE AND
CHARACTERISTICS 539 13.5 NEGATIVE RESISTANCE DIODES 540 13.5.1
AMPLIFICATION AND OSCILLATION BY NEGATIVE DYNAMIC RESISTANCE 540 13.5.2
GUNN DIODE 545 13.5.3 IMPATT DIODE 548 13.5.4 TUNNEL DIODE 549 SUMMARY
551 PROBLEMS 551 REVIEW QUESTIONS 552 14 POWER DEVICES 554 14.1 POWER
DIODES 555 14.1.1 DRIFT REGION IN POWER DEVICES 555 14.1.2 SWITCHING
CHARACTERISTICS 557 14.1.3 SCHOTTKY DIODE 559 14.2 POWER MOSFET 559 14.3
IGBT 562 14.4 THYRISTOR 564 SUMMARY 566 PROBLEMS 567 REVIEW QUESTIONS
568 BIBLIOGRAPHY 571 ANSWERS TO SELECTED PROBLEMS 573 INDEX 579
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| adam_txt |
PRINCIPLES OF SEMICONDUCTOR DEVICES SIMA DIMITRIJEV GRIFFITH UNIVERSITY
NEW YORK * OXFORD OXFORD UNIVERSITY PRESS 2006 CONTENTS PREFACE XIII
PART I INTRODUCTION TO SEMICONDUCTORS 1 SEMICONDUCTOR CRYSTALS: THE
ATOMIC-BOND MODEL 3 1.1 CRYSTAL LATTICES 4 1.1.1 UNIT CELL 4 1.1.2
PLANES AND DIRECTIONS 7 1.1.3 ATOMIC BONDS 10 1.2 CURRENT CARRIERS 12
1.2.1 TWO TYPES OF CURRENT CARRIERS IN SEMICONDUCTORS 13 1.2.2 N-TYPE
AND P-TYPE DOPING 15 1.2.3 ELECTRONEUTRALITY EQUATION 17 1.2.4 ELECTRON
AND HOLE GENERATION AND RECOMBINATION IN THERMAL EQUILIBRIUM 18 * 1.3
BASICS OF CRYSTAL GROWTH AND DOPING TECHNIQUES 21 1.3.1 CRYSTAL-GROWTH
TECHNIQUES 21 1.3.2 DOPING TECHNIQUES 24 SUMMARY 26 PROBLEMS 28 REVIEW
QUESTIONS 30 'INDICATES AN ADVANCED SECTION THAT CAN BE OMITTED WITHOUT
LOSS OF CONTINUITY. VI CONTENTS 2 QUANTUM MECHANICS AND THE ENERGY-BAND
MODEL 31 2.1 ELECTRONS AS WAVES 32 2.1.1 DE BROGLIE RELATIONSHIP BETWEEN
PARTICLE AND WAVE PROPERTIES 32 2.1.2 WAVE FUNCTION AND WAVE PACKET 33
2.1.3 SCHRODINGER EQUATION 38 2.2 ENERGY LEVELS IN ATOMS AND ENERGY
BANDS IN CRYSTALS 45 2.2.1 ATOMIC STRUCTURE 45 2.2.2 ENERGY BANDS IN
METALS 47 2.2.3 ENERGY GAP AND ENERGY BANDS IN SEMICONDUCTORS AND
INSULATORS 49 2.3 ELECTRONS AND HOLES AS PARTICLES 54 2.3.1 EFFECTIVE
MASS AND REAL E-K DIAGRAMS 54 2.3.2 THE QUESTION OF ELECTRON SIZE: THE
UNCERTAINTY PRINCIPLE 58 2.3.3 DENSITY OF ELECTRON STATES 62 2.4
POPULATION OF ELECTRON STATES: CONCENTRATIONS OF ELECTRONS AND HOLES 66
2.4.1 FERMI-DIRAC DISTRIBUTION 67 2.4.2 MAXWELL-BOLTZMANN APPROXIMATION
AND EFFECTIVE DENSITY OF STATES 72 2.4.3 FERMI POTENTIAL AND DOPING 78
2.4.4 NONEQUILIBRIUM CARRIER CONCENTRATIONS AND QUASI-FERMI LEVELS 85
SUMMARY 87 PROBLEMS 90 REVIEW QUESTIONS 94 3 DRIFT 97 3.1 ENERGY BANDS
WITH APPLIED ELECTRIC FIELD 97 3.1.1 ENERGY-BAND PRESENTATION OF DRIFT
CURRENT 98 3.1.2 RESISTANCE AND POWER DISSIPATION DUE TO CARRIER
SCATTERING 100 3.2 OHM'S LAW, SHEET RESISTANCE, AND CONDUCTIVITY 100
3.2.1 DESIGNING INTEGRATED-CIRCUIT RESISTORS 101 3.2.2 DIFFERENTIAL FORM
OF OHM'S LAW 107 3.2.3 CONDUCTIVITY INGREDIENTS 110 3.3 CARRIER MOBILITY
112 3.3.1 THERMAL AND DRIFT VELOCITIES 112 3.3.2 MOBILITY DEFINITION 115
3.3.3 SCATTERING TIME AND SCATTERING CROSS SECTION 116 3.3.4 MATHIESON'S
RULE 118 *3.3.5 HALL EFFECT 123 CONTENTS VII SUMMARY 125 PROBLEMS 126
REVIEW QUESTIONS 129 4 DIFFUSION 130 4.1 DIFFUSION-CURRENT EQUATION 130
4.2 DIFFUSION COEFFICIENT 133 4.2.1 EINSTEIN RELATIONSHIP 133 4.2.2
HAYNES-SHOCKLEY EXPERIMENT 136 4.2.3 ARRHENIUS EQUATION 138 4.3 BASIC
CONTINUITY EQUATION 139 SUMMARY 144 PROBLEMS 145 REVIEW QUESTIONS 146 5
GENERATION AND RECOMBINATION 148 5.1 GENERATION AND RECOMBINATION
MECHANISMS 148 5.2 GENERAL FORM OF THE CONTINUITY EQUATION 151 5.2.1
RECOMBINATION AND GENERATION RATES 151 5.2.2 MINORITY-CARRIER LIFETIME
153 5.2.3 DIFFUSION LENGTH 156 *5.3 GENERATION AND RECOMBINATION PHYSICS
AND SHOCKLEY-READ-HALL (SRH) THEORY 157 5.3.1 CAPTURE AND EMISSION RATES
IN THERMAL EQUILIBRIUM 158 5.3.2 STEADY-STATE EQUATION FOR THE EFFECTIVE
THERMAL GENERATION- RECOMBINATION RATE 161 5.3.3 SPECIAL CASES 167 5.3.4
SURFACE GENERATION AND RECOMBINATION 174 SUMMARY 178 PROBLEMS 180 REVIEW
QUESTIONS 182 PART II FUNDAMENTAL DEVICE STRUCTURES 6 P-N JUNCTION 187
6.1 P-N JUNCTION PRINCIPLES 187 6.1.1 P-N JUNCTION IN THERMAL
EQUILIBRIUM: BUILT-IN VOLTAGE 187 6.1.2 REVERSE-BIASED P-N JUNCTION 191
VIII CONTENTS 6.1.3 FORWARD-BIASED P-N JUNCTION 193 6.1.4 BREAKDOWN
PHENOMENA 195 6.2 DC MODEL 199 6.2.1 BASIC CURRENT-VOLTAGE (I-V)
EQUATION 199 6.2.2 IMPORTANT SECOND-ORDER EFFECTS 207 6.2.3 TEMPERATURE
EFFECTS 211 6.3 CAPACITANCE OF REVERSE-BIASED P-N JUNCTION 213 6.3.1 C-V
DEPENDENCE 214 6.3.2 DEPLETION-LAYER WIDTH: SOLVING THE POISSON EQUATION
215 6.3.3 SPICE MODEL FOR THE DEPLETION-LAYER CAPACITANCE 228 6.4
STORED-CHARGE EFFECTS 228 6.4.1 STORED CHARGE AND TRANSIT TIME 228 6.4.2
RELATIONSHIP BETWEEN THE TRANSIT TIME AND THE MINORITY-CARRIER LIFETIME
229 6.4.3 SWITCHING CHARACTERISTICS: REVERSE-RECOVERY TIME 230 SUMMARY
232 PROBLEMS 235 REVIEW QUESTIONS 240 7 METAL-SEMICONDUCTOR CONTACT AND
MOS CAPACITOR 242 7.1 METAL-SEMICONDUCTOR CONTACT 243 7.1.1 SCHOTTKY
DIODE: RECTIFYING METAL-SEMICONDUCTOR CONTACT 243 7.1.2 OHMIC
METAL-SEMICONDUCTOR CONTACTS 251 7.2 MOS CAPACITOR 252 7.2.1 PROPERTIES
OF THE GATE OXIDE AND THE OXIDE-SEMICONDUCTOR INTERFACE 253 7.2.2 C-V
CURVE AND THE SURFACE-POTENTIAL DEPENDENCE ON GATE VOLTAGE 257 7.2.3
ENERGY-BAND DIAGRAMS 265 *7.2.4 FLAT-BAND CAPACITANCE AND DEBYE LENGTH
276 SUMMARY 279 PROBLEMS 280 REVIEW QUESTIONS 284 8 MOSFET 286 8.1
MOSFET PRINCIPLES 286 8.1.1 MOSFET STRUCTURE 286 8.1.2 MOSFET AS A
VOLTAGE-CONTROLLED SWITCH 289 CONTENTS IX 8.1.3 THE THRESHOLD VOLTAGE
AND THE BODY EFFECT 294 8.1.4 MOSFET AS A VOLTAGE-CONTROLLED CURRENT
SOURCE: MECHANISMS OF CURRENT SATURATION 298 8.2 PRINCIPAL
CURRENT-VOLTAGE CHARACTERISTICS AND EQUATIONS 302 8.2.1 SPICE LEVEL 1
MODEL 303 8.2.2 SPICE LEVEL 2 MODEL 306 8.2.3 SPICE LEVEL 3 MODEL:
PRINCIPAL EFFECTS 308 8.3 SECOND-ORDER EFFECTS 312 8.3.1 MOBILITY
REDUCTION WITH GATE VOLTAGE 312 8.3.2 VELOCITY SATURATION (MOBILITY
REDUCTION WITH DRAIN VOLTAGE) 313 8.3.3 FINITE OUTPUT RESISTANCE 314
8.3.4 THRESHOLD-VOLTAGE-RELATED SHORT-CHANNEL EFFECTS 316 8.3.5
THRESHOLD-VOLTAGE-RELATED NARROW-CHANNEL EFFECTS 318 8.3.6 SUBTHRESHOLD
CURRENT 318 8.4 NANOSCALE MOSFETS 320 8.4.1 DOWN-SCALING BENEFITS AND
RULES 321 8.4.2 LEAKAGE CURRENTS 323 8.4.3 ADVANCED MOSFETS 325 *8.4.4
RELIABILITY ISSUES 328 8.5 MOS-BASED MEMORY DEVICES 336 8.5.1 1C1T DRAM
CELL 337 8.5.2 FLASH-MEMORY CELL 338 SUMMARY 340 PROBLEMS 342 REVIEW
QUESTIONS 345 9 BJT 347 9.1 BJT PRINCIPLES 347 9.1.1 BJT AS A
VOLTAGE-CONTROLLED CURRENT SOURCE 348 9.1.2 BJT CURRENTS AND GAIN
DEFINITIONS 351 9.1.3 DEPENDENCE OF A AND /8 CURRENT GAINS ON
TECHNOLOGICAL PARAMETERS 355 9.1.4 THE FOUR MODES OF OPERATION: BJT AS A
SWITCH 360 9.1.5 COMPLEMENTARY BJT 365 9.1.6 BJT VERSUS MOSFET 366 9.2
PRINCIPAL CURRENT-VOLTAGE CHARACTERISTICS: EBERS-MOLL MODEL IN SPICE 368
9.2.1 INJECTION VERSION 368 9.2.2 TRANSPORT VERSION 369 9.2.3 SPICE
VERSION 371 CONTENTS 9.3 SECOND-ORDER EFFECTS 375 9.3.1 EARLY EFFECT:
FINITE DYNAMIC OUTPUT RESISTANCE 375 9.3.2 PARASITIC RESISTANCES 378
9.3.3 DEPENDENCE OF COMMON-EMITTER CURRENT GAIN ON TRANSISTOR CURRENT:
LOW-CURRENT EFFECTS 379 9.3.4 DEPENDENCE OF COMMON-EMITTER CURRENT GAIN
ON TRANSISTOR CURRENT: GUMMEL-POON MODEL FOR HIGH-CURRENT EFFECTS 380
9.4 HETEROJUNCTION BIPOLAR TRANSISTOR 383 SUMMARY 386 PROBLEMS 388
REVIEW QUESTIONS 391 PART 111 DEVICE TECH NOLOGY AN D ELECTRON ICS 10
INTEGRATED-CIRCUIT TECHNOLOGIES 395 10.1 A DIODE IN IC TECHNOLOGY 395
10.1.1 BASIC STRUCTURE 395 10.1.2 LITHOGRAPHY 396 10.1.3 PROCESS
SEQUENCE 398 10.1.4 DIFFUSION PROFILES 400 10.2 MOSFET TECHNOLOGIES 405
10.2.1 LOCAL OXIDATION OF SILICON (LOCOS) 405 10.2.2 NMOS TECHNOLOGY 406
10.2.3 BASIC CMOS TECHNOLOGY 414 10.2.4 SILICON-ON-INSULATOR (SOI)
TECHNOLOGY 422 10.3 BIPOLAR IC TECHNOLOGIES 423 10.3.1 IC STRUCTURE OF
NPN BJT 423 10.3.2 STANDARD BIPOLAR TECHNOLOGY PROCESS 425 10.3.3
IMPLEMENTATION OF PNP BJTS, RESISTORS, CAPACITORS, AND DIODES 429 10.3.4
LAYER MERGING 433 10.3.5 BICMOS TECHNOLOGY 436 SUMMARY 437 PROBLEMS 438
REVIEW QUESTIONS 441 11 DEVICE ELECTRONICS: EQUIVALENT CIRCUITS AND
SPICE PARAMETERS 442 11.1 DIODES 443 11.1.1 STATIC MODEL AND PARAMETERS
IN SPICE 443 11.1.2 LARGE-SIGNAL EQUIVALENT CIRCUIT IN SPICE 444
CONTENTS XI 11.1.3 PARAMETER MEASUREMENT 446 11.1.4 SMALL-SIGNAL
EQUIVALENT CIRCUIT 452 11.2 MOSFET 455 11.2.1 STATIC MODEL AND
PARAMETERS: LEVEL 3 IN SPICE 455 11.2.2 PARAMETER MEASUREMENT 460 11.2.3
LARGE-SIGNAL EQUIVALENT CIRCUIT AND DYNAMIC PARAMETERS IN SPICE 468
11.2.4 SIMPLE DIGITAL MODEL 470 11.2.5 SMALL-SIGNAL EQUIVALENT CIRCUIT
476 11.3 BJT 478 11.3.1 STATIC MODEL AND PARAMETERS: EBERS-MOLL AND
GUMMEL-POON LEVELS IN SPICE 478 11.3.2 PARAMETER MEASUREMENT 480 11.3.3
LARGE-SIGNAL EQUIVALENT CIRCUIT AND DYNAMIC PARAMETERS IN SPICE 485
11.3.4 SMALL-SIGNAL EQUIVALENT CIRCUIT 487 11.3.5 PARASITIC IC ELEMENTS
NOT INCLUDED IN DEVICE MODELS 489 SUMMARY 492 PROBLEMS 493 REVIEW
QUESTIONS 495 PART IV SPECIFIC DEVICES 12 PHOTONIC DEVICES 499 12.1
LIGHT-EMITTING DIODES (LED) 499 12.2 PHOTODETECTORS AND SOLAR CELLS 502
12.2.1 BIASING FOR PHOTODETECTOR AND SOLAR-CELL APPLICATIONS 502 12.2.2
CARRIER GENERATION IN PHOTODETECTORS AND SOLAR CELLS 504 12.2.3
PHOTOCURRENT EQUATION 506 12.3 LASERS 512 12.3.1 STIMULATED EMISSION,
INVERSION POPULATION, AND OTHER FUNDAMENTAL CONCEPTS 512 12.3.2 A
TYPICAL HETEROJUNCTION LASER 514 SUMMARY 516 PROBLEMS 517 REVIEW
QUESTIONS 518 13 MICROWAVE FETS AND DIODES 520 13.1 GALLIUM ARSENIDE
VERSUS SILICON 522 13.1.1 DIELECTRIC-SEMICONDUCTOR INTERFACE:
ENHANCEMENT VERSUS DEPLETION FETS 522 XII CONTENTS 13.1.2 ENERGY GAP 523
13.1.3 ELECTRON MOBILITY AND SATURATION VELOCITY 524 13.1.4 NEGATIVE
DYNAMIC RESISTANCE 525 13.2 JFET 525 13.2.1 JFET STRUCTURE 525 13.2.2
JFET CHARACTERISTICS 526 * 13.2.3 SPICE MODEL AND PARAMETERS 530 13.3
MESFET 533 13.3.1 MESFET STRUCTURE 533 13.3.2 MESFET CHARACTERISTICS 533
* 13.3.3 SPICE MODEL AND PARAMETERS 534 13.4 HEMT 536 13.4.1
TWO-DIMENSIONAL ELECTRON GAS (2DEG) 537 13.4.2 HEMT STRUCTURE AND
CHARACTERISTICS 539 13.5 NEGATIVE RESISTANCE DIODES 540 13.5.1
AMPLIFICATION AND OSCILLATION BY NEGATIVE DYNAMIC RESISTANCE 540 13.5.2
GUNN DIODE 545 13.5.3 IMPATT DIODE 548 13.5.4 TUNNEL DIODE 549 SUMMARY
551 PROBLEMS 551 REVIEW QUESTIONS 552 14 POWER DEVICES 554 14.1 POWER
DIODES 555 14.1.1 DRIFT REGION IN POWER DEVICES 555 14.1.2 SWITCHING
CHARACTERISTICS 557 14.1.3 SCHOTTKY DIODE 559 14.2 POWER MOSFET 559 14.3
IGBT 562 14.4 THYRISTOR 564 SUMMARY 566 PROBLEMS 567 REVIEW QUESTIONS
568 BIBLIOGRAPHY 571 ANSWERS TO SELECTED PROBLEMS 573 INDEX 579 |
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| classification_rvk | UP 2800 ZN 4800 |
| ctrlnum | (OCoLC)57344014 (DE-599)BVBBV021500862 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
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| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| illustrated | Illustrated |
| index_date | 2024-07-02T14:15:24Z |
| indexdate | 2024-07-09T20:37:13Z |
| institution | BVB |
| isbn | 0195161130 9780195161137 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-014717587 |
| oclc_num | 57344014 |
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| physical | XVIII, 588 S. Ill., graph. Darst. |
| publishDate | 2006 |
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| publisher | Oxford Univ. Press |
| record_format | marc |
| series2 | The Oxford series in electrical and computer engineering |
| spelling | Dimitrijev, Sima Verfasser aut Principles of semiconductor devices Sima Dimitrijev New York [u.a.] Oxford Univ. Press 2006 XVIII, 588 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier The Oxford series in electrical and computer engineering Semiconductors Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s DE-604 HEBIS Datenaustausch Darmstadt application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014717587&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Dimitrijev, Sima Principles of semiconductor devices Semiconductors Halbleiterbauelement (DE-588)4113826-0 gnd |
| subject_GND | (DE-588)4113826-0 |
| title | Principles of semiconductor devices |
| title_auth | Principles of semiconductor devices |
| title_exact_search | Principles of semiconductor devices |
| title_exact_search_txtP | Principles of semiconductor devices |
| title_full | Principles of semiconductor devices Sima Dimitrijev |
| title_fullStr | Principles of semiconductor devices Sima Dimitrijev |
| title_full_unstemmed | Principles of semiconductor devices Sima Dimitrijev |
| title_short | Principles of semiconductor devices |
| title_sort | principles of semiconductor devices |
| topic | Semiconductors Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Semiconductors Halbleiterbauelement |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014717587&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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