The materials science of semiconductors:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
New York, NY
Springer
2008
|
| Subjects: | |
| Online Access: | Inhaltstext Inhaltsverzeichnis |
| Physical Description: | XVI, 622 S. Ill., graph. Darst. |
| ISBN: | 9780387256535 0387256539 |
Staff View
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV021287880 | ||
| 003 | DE-604 | ||
| 005 | 20080222 | ||
| 007 | t | ||
| 008 | 060111s2008 gw ad|| |||| 00||| eng d | ||
| 015 | |a 06,N02,1467 |2 dnb | ||
| 016 | 7 | |a 977545202 |2 DE-101 | |
| 020 | |a 9780387256535 |c Gb. : ca. EUR 78.06, sfr 129.00 |9 978-0-387-25653-5 | ||
| 020 | |a 0387256539 |9 0-387-25653-9 | ||
| 024 | 3 | |a 9780387256535 | |
| 035 | |a (OCoLC)77256531 | ||
| 035 | |a (DE-599)BVBBV021287880 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-BE | ||
| 049 | |a DE-20 |a DE-703 |a DE-29T |a DE-1050 |a DE-573 | ||
| 050 | 0 | |a TK7871.85 | |
| 082 | 0 | |a 621.38152 |2 22 | |
| 084 | |a UP 2800 |0 (DE-625)146366: |2 rvk | ||
| 084 | |a ZN 4800 |0 (DE-625)157408: |2 rvk | ||
| 084 | |a 620 |2 sdnb | ||
| 100 | 1 | |a Rockett, Angus |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a The materials science of semiconductors |c Angus Rockett |
| 264 | 1 | |a New York, NY |b Springer |c 2008 | |
| 300 | |a XVI, 622 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 4 | |a Materials science |x Study and teaching (Higher) |v Problems, exercises, etc | |
| 650 | 4 | |a Semiconductors |x Study and teaching (Higher) |v Problems, exercises, etc | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Werkstoffkunde |0 (DE-588)4079184-1 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Werkstoffkunde |0 (DE-588)4079184-1 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleiterphysik |0 (DE-588)4113829-6 |D s |
| 689 | 1 | |5 DE-604 | |
| 856 | 4 | 2 | |q text/html |u http://deposit.dnb.de/cgi-bin/dokserv?id=2737925&prov=M&dok_var=1&dok_ext=htm |3 Inhaltstext |
| 856 | 4 | 2 | |m HEBIS Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014608787&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-014608787 | ||
Record in the Search Index
| _version_ | 1804135078432866304 |
|---|---|
| adam_text | ANGUS ROCKETT THE MATERIALS SCIENCE OF SEMICONDUCTORS SPRINGER TABLE OF
CONTENTS PREFACE VII OBJECTIVES VII TOPICS AND USE OF THE BOOK VIII
ACKNOWLEDGEMENTS IX 1. AN ENVIRONMENT OF CHALLENGES 1 1.1 OVERVIEW 1 1.2
A HISTORY OF MODERN ELECTRONIC DEVICES 2 1.3 AN ISSUE OF SCALE 7 1.4
DEFINING ELECTRONIC MATERIALS 11 1.5 PURITY 13 1.6 PERFORMANCE 14 1.7
SUMMARY POINTS 17 1.8 HOMEWORK PROBLEMS 18 1.9 SUGGESTED READINGS
(PREFERENCES 19 2. THE PHYSICS OF SOLIDS 21 2.1 ELECTRONIC BAND
STRUCTURES OF SOLIDS 21 2.1.1 FREE ELECTRONS IN SOLIDS 23 2.1.2 FREE
ELECTRONS IN APERIODIC POTENTIAL 24 2.1.3 NEARLY FREE ELECTRONS 25 2.1.4
ENERGY VS. MOMENTUM IN 3D 28 2.1.5 ELECTRONS AND HOLES 32 2.1.6 DIRECT
AND INDIRECT SEMICONDUCTORS 35 2.1.7 EFFECTIVE MASS 37 2.1.8 DENSITY OF
STATES 38 2.2 INTRINSIC AND EXTRINSIC SEMICONDUCTORS 40 2.2.1 INTRINSIC
SEMICONDUCTORS 40 2.2.2 EXTRINSIC SEMICONDUCTORS 42 2.3 PROPERTIES AND
THE BAND STRUCTURE 44 2.3.1 RESISTANCE, CAPACITANCE, AND INDUCTANCE 44
2.3.2 OPTICAL PROPERTIES 53 2.3.3 THERMAL PROPERTIES 54 2.4 QUANTUM
WELLS AND CONFINED CARRIERS 59 XII TABLE OF CONTENTS 2.5 SUMMARY POINTS
67 2.6 HOMEWORK 69 2.7 SUGGESTED READINGS & REFERENCES 71 3. OVERVIEW OF
ELECTRONIC DEVICES 73 3.1 DIFFUSION AND DRIFT OF CARRIERS 74 3.1.1
CHEMICAL POTENTIAL 74 3.1.2 CARRIER MOTION IN A CHEMICAL POTENTIAL
GRADIENT 74 3.2 SIMPLE DIODES 75 3.2.1 THE JUNCTION CONTACT POTENTIAL 77
3.2.2 BIASED JUNCTIONS 81 3.2.3 NON-IDEAL DIODE BEHAVIORS 88 3.3
SCHOTTKY BARRIERS AND OHMIC CONTACTS 96 3.3.1 IDEAL METAL/SEMICONDUCTOR
JUNCTIONS 96 3.3.2 REAL SCHOTTKY DIODES 101 3.4 SEMICONDUCTOR
HETEROJUNCTIONS 102 3.4.1 HETEROJUNCTIONS AT EQUILIBRIUM 103 3.4.2
HETEROJUNCTIONS AS DIODES 109 3.5 TRANSISTORS ILL 3.5.1 BIPOLAR JUNCTION
TRANSISTORS ILL 3.5.2 FIELD-EFFECT TRANSISTORS 114 3.6 LIGHT-EMITTING
DEVICES 119 3.6.1 LIGHT-EMITTING DIODES 120 3.6.2 LASER DIODES 124 3.7
SUMMARY 134 3.8 HOMEWORK PROBLEMS 136 3.9 SUGGESTED READINGS &
REFERENCES 139 4. ASPECTS OF MATERIALS SCIENCE 141 4.1 STRUCTURES OF
MATERIALS 141 4.1.1 CRYSTAL LATTICES 142 4.1.2 THE RECIPROCAL LATTICE
148 4.2 BASIC THERMODYNAMICS OF MATERIALS 151 4.3 PHASE DIAGRAMS 155 4.4
KINETICS 163 4.4.1 REACTION KINETICS 164 4.4.2 NUCLEATION 166 4.4.3
ATOMIC TRANSPORT 170 4.5 ORGANIC MOLECULES 172 4.6 APPLICATIONS 178
4.6.1 A BASIS FOR PHASE TRANSFORMATIONS 178 TABLE OF CONTENTS XIII 4.6.2
SILICON CRYSTAL FABRICATION 180 4.6.3 RAPID THERMAL PROCESSING 187 4.7
SUMMARY POINTS 189 4.8 HOMEWORK 191 4.9 SUGGESTED READINGS AND
REFERENCES 194 5. ENGINEERING ELECTRONIC STRUCTURE 195 5.1 LINKING
ATOMIC ORBITALS TO BANDS 196 5.1.1 HOMOPOLAR SEMICONDUCTORS 197 5.1.2
HETEROPOLAR COMPOUNDS 201 5.2 LCAO: FROM ATOMIC ORBITALS TO BANDS 206
5.3 COMMON SEMICONDUCTOR ENERGY BANDS 215 5.4 PRESSURE AND TEMPERATURE
DEPENDENCE 223 5.5 APPLICATIONS 226 5.5.1 EXPERIMENTAL BAND STRUCTURES
226 5.5.2 GUNN DIODES 228 5.6 SUMMARY POINTS 232 5.7 HOMEWORK 233 5.8
SUGGESTED READINGS & REFERENCES 235 6. SEMICONDUCTOR ALLOYS 237 6.1
ALLOY SELECTION 238 6.1.1 OVERVIEW . 238 6.1.2 CHOOSING ALLOY
CONSTITUENTS 241 6.2 SEMICONDUCTOR ALLOY THERMODYNAMICS 245 6.2.1
REGULAR SOLUTION THEORY REVISITED 245 6.2.2 TERNARY AND QUATERNARY
SOLUTIONS 249 6.2.3 MORE MECHANISMS FOR ALLOY ORDERING 252 6.3 BAND GAP
BOWING 255 6.3.1 BINARY AND PSEUDOBINARY ALLOYS 255 6.3.2 BOWING IN
QUATERNARY ALLOYS 260 6.4 SILICON-GERMANIUM ALLOYS 261 6.4.1 STRUCTURE
AND SOLUBILITY 262 6.4.2 BAND GAP ENGINEERING 264 6.4.3 ALLOYING AND
CARRIER MOBILITY 267 6.5 METASTABLE SEMICONDUCTOR ALLOYS 268 6.6
APPLICATIONS ; 272 6.6.1 HETEROJUNCTION BIPOLAR TRANSISTORS 272 6.6.2
SOLAR CELLS 276 6.7 SUMMARY POINTS 280 6.8 HOMEWORK 282 6.9 SUGGESTED
READINGS & REFERENCES 285 XIV TABLE OF CONTENTS 7. DEFECTS IN
SEMICONDUCTORS 289 7.1 POINT DEFECTS 289 7.1.1 ELECTRONIC STATES DUE TO
POINT DEFECTS 291 7.1.2 SHALLOW LEVELS 295 7.1.3 DEPTH OF INTRINSIC
DEFECTS 299 7.1.4 IONIZATION OF DEFECTS 300 7.1.5 POINT DEFECT DENSITIES
302 7.1.6 VACANCIES AND DOPANT DIFFUSIVITY 308 7.2 LINE DEFECTS 311 7.3
STRAIN RELIEF IN HETEROSTRUCTURES 320 7.3.1 ENERGETICS OF STRAIN RELIEF
322 7.3.2 MISFIT DISLOCATIONS 328 7.3.3 DISLOCATION DYNAMICS 329 7.3.4
REDUCING PROBLEMS DUE TO STRAIN RELIEF 336 7.4 PLANAR AND VOLUME DEFECTS
337 7.4.1 TWINS AND STACKING FAULTS 337 7.4.2 SURFACES, INTERFACES,
GRAIN BOUNDARIES 340 7.4.3 VOLUME DEFECTS 343 7.5 SIC: A CASE STUDY IN
STACKING FAULTS 344 7.6 SUMMARY POINTS 349 7.7 HOMEWORK 352 7.8
SUGGESTED READINGS & REFERENCES 355 8. AMORPHOUS SEMICONDUCTORS 357 8.1
STRUCTURE AND BONDING 358 8.2 HYDROGENATED AMORPHOUS SI 364 8.3
DEPOSITION METHODS FOR A-SI 366 8.4 ELECTRONIC PROPERTIES 367 8.4.1
CARRIER TRANSPORT AND MOBILITY 367 8.4.2 MOBILITY MEASUREMENTS 370 8.4.3
DOPING 372 8.4.4 SHORT-RANGE ORDER 373 8.5 OPTICAL PROPERTIES 374 8.6
AMORPHOUS SEMICONDUCTOR ALLOYS 377 8.7 APPLICATIONS. 380 8.7.1 THIN FILM
TRANSISTORS 380 8.7.2 SOLAR CELLS 383 8.8 SUMMARY POINTS 389 8.9
HOMEWORK 391 8.10 SUGGESTED READINGS AND REFERENCES 392 TABLE OF
CONTENTS XV 9. ORGANIC SEMICONDUCTORS 395 9.1 MATERIALS OVERVIEW 395
9.1.1 CONJUGATED ORGANIC MATERIALS 396 9.1.2 IONIZED ORGANIC MOLECULAR
STRUCTURES 403 9.2 OVERVIEW OF ORGANIC DEVICES 407 9.2.1 LIGHT EMITTING
DEVICES 408 9.2.2 TRANSISTORS 411 9.3 MOLECULAR OPTOELECTRONIC MATERIALS
414 9.3.1 MOLECULAR ELECTRON TRANSPORTERS 415 9.3.2 MOLECULAR HOLE
TRANSPORTERS 417 9.3.3 DYE MOLECULES 420 9.3.4 MOLECULES FOR THIN FILM
TRANSISTORS 427 9.4 POLYMER OPTOELECTRONIC ORGANICS 428 9.4.1 POLYMERS
FOR ORGANIC LIGHT EMITTING DEVICES 429 9.4.2 POLYMERS FOR TRANSISTORS
434 9.5 CONTACT TO ORGANIC MATERIALS 436 9.5.1 THE CATHODE CONTACT 436
9.5.2 THE ANODE CONTACT 439 9.6 DEFECTS IN ORGANIC MATERIALS 440 9.7
PATTERNING ORGANIC MATERIALS 442 9.8 SUMMARY POINTS 446 9.9 HOMEWORK 448
9.10 SUGGESTED READINGS & REFERENCES 450 10. THIN FILM GROWTH PROCESSES
455 10.1 GROWTH PROCESSES 455 10.2 GAS PHASE TRANSPORT 460 10.3
ADSORPTION 461 10.4 DESORPTION 464 10.5 STICKING COEFFICIENT & SURFACE
COVERAGE 466 10.6 NUCLEATION & GROWTH OF THIN FILMS 468 10.7 SURFACE
DIFFUSION 474 10.8 SURFACE ENERGY 477 10.9 MORPHOLOGY DETERMINED BY
NUCLEATION 481 10.10 MICROSTRUCTURE EVOLUTION 484 10.11 RESIDUAL STRESS
AND ADHESION 485 10.12 APPLICATIONS 488 10.12.1 ADSORPTION, DESORPTION
AND BINDING OF H TO SI 488 10.12.2 SURFACE PROCESSES IN GAAS EPITAXIAL
GROWTH 491 10.13 SUMMARY POINTS 496 10.14 HOMEWORK PROBLEMS 499 10.15
SUGGESTED READINGS & REFERENCES 502 XVI TABLE OF CONTENTS 11. PHYSICAL
VAPOR DEPOSITION 505 11.1 EVAPORATION 505 11.1.1 BASIC SYSTEM GEOMETRIES
506 11.1.2 SOURCES 508 11.1.3 VAPOR PRESSURE 516 11.2 MONITORING
DEPOSITION RATES 517 11.2.1 SIMPLE RATE MONITORING METHODS 518 11.2.2
REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION 520 11.3 SPUTTERING 526
11.3.1 SPUTTERING YIELD 527 11.3.2 ENERGETIC PARTICLES 533 11.3.3
SPUTTERING SYSTEMS 539 11.3.4 GLOW DISCHARGE BASICS 542 11.4 FAST
PARTICLE MODIFICATION OF FILMS 553 11.5 APPLICATION 560 11.6 SUMMARY
POINTS 564 11.7 HOMEWORK PROBLEMS 567 11.8 SUGGESTED READINGS &
REFERENCES 570 12. CHEMICAL VAPOR DEPOSITION 573 12.1 OVERVIEW 574 12.2
CVD APPARATUS 578 12.3 GAS FLOW IN CVD REACTORS 581 12.4 REACTANT
SELECTION AND DESIGN 584 12.5 STIMULATED CVD 587 12.6 SELECTIVE CVD 591
12.7 ATOMIC LAYER DEPOSITION 594 12.8 SAMPLE CVD AND ALD PROCESSES 597
12.9 SUMMARY POINTS 604 12.10 HOMEWORK PROBLEMS 606 12.11 SUGGESTED
READINGS (PREFERENCES 608 APPENDIX 611 USEFUL CONSTANTS 611 UNITS 612
UNIT CONVERSIONS 612 INDEX 615
|
| adam_txt |
ANGUS ROCKETT THE MATERIALS SCIENCE OF SEMICONDUCTORS SPRINGER TABLE OF
CONTENTS PREFACE VII OBJECTIVES VII TOPICS AND USE OF THE BOOK VIII
ACKNOWLEDGEMENTS IX 1. AN ENVIRONMENT OF CHALLENGES 1 1.1 OVERVIEW 1 1.2
A HISTORY OF MODERN ELECTRONIC DEVICES 2 1.3 AN ISSUE OF SCALE 7 1.4
DEFINING ELECTRONIC MATERIALS 11 1.5 PURITY 13 1.6 PERFORMANCE 14 1.7
SUMMARY POINTS 17 1.8 HOMEWORK PROBLEMS 18 1.9 SUGGESTED READINGS
(PREFERENCES 19 2. THE PHYSICS OF SOLIDS 21 2.1 ELECTRONIC BAND
STRUCTURES OF SOLIDS 21 2.1.1 FREE ELECTRONS IN SOLIDS 23 2.1.2 FREE
ELECTRONS IN APERIODIC POTENTIAL 24 2.1.3 NEARLY FREE ELECTRONS 25 2.1.4
ENERGY VS. MOMENTUM IN 3D 28 2.1.5 ELECTRONS AND HOLES 32 2.1.6 DIRECT
AND INDIRECT SEMICONDUCTORS 35 2.1.7 EFFECTIVE MASS 37 2.1.8 DENSITY OF
STATES 38 2.2 INTRINSIC AND EXTRINSIC SEMICONDUCTORS 40 2.2.1 INTRINSIC
SEMICONDUCTORS 40 2.2.2 EXTRINSIC SEMICONDUCTORS 42 2.3 PROPERTIES AND
THE BAND STRUCTURE 44 2.3.1 RESISTANCE, CAPACITANCE, AND INDUCTANCE 44
2.3.2 OPTICAL PROPERTIES 53 2.3.3 THERMAL PROPERTIES 54 2.4 QUANTUM
WELLS AND CONFINED CARRIERS 59 XII TABLE OF CONTENTS 2.5 SUMMARY POINTS
67 2.6 HOMEWORK 69 2.7 SUGGESTED READINGS & REFERENCES 71 3. OVERVIEW OF
ELECTRONIC DEVICES 73 3.1 DIFFUSION AND DRIFT OF CARRIERS 74 3.1.1
CHEMICAL POTENTIAL 74 3.1.2 CARRIER MOTION IN A CHEMICAL POTENTIAL
GRADIENT 74 3.2 SIMPLE DIODES 75 3.2.1 THE JUNCTION CONTACT POTENTIAL 77
3.2.2 BIASED JUNCTIONS 81 3.2.3 NON-IDEAL DIODE BEHAVIORS 88 3.3
SCHOTTKY BARRIERS AND OHMIC CONTACTS 96 3.3.1 IDEAL METAL/SEMICONDUCTOR
JUNCTIONS 96 3.3.2 REAL SCHOTTKY DIODES 101 3.4 SEMICONDUCTOR
HETEROJUNCTIONS 102 3.4.1 HETEROJUNCTIONS AT EQUILIBRIUM 103 3.4.2
HETEROJUNCTIONS AS DIODES 109 3.5 TRANSISTORS ILL 3.5.1 BIPOLAR JUNCTION
TRANSISTORS ILL 3.5.2 FIELD-EFFECT TRANSISTORS 114 3.6 LIGHT-EMITTING
DEVICES 119 3.6.1 LIGHT-EMITTING DIODES 120 3.6.2 LASER DIODES 124 3.7
SUMMARY 134 3.8 HOMEWORK PROBLEMS 136 3.9 SUGGESTED READINGS &
REFERENCES 139 4. ASPECTS OF MATERIALS SCIENCE 141 4.1 STRUCTURES OF
MATERIALS 141 4.1.1 CRYSTAL LATTICES 142 4.1.2 THE RECIPROCAL LATTICE
148 4.2 BASIC THERMODYNAMICS OF MATERIALS 151 4.3 PHASE DIAGRAMS 155 4.4
KINETICS 163 4.4.1 REACTION KINETICS 164 4.4.2 NUCLEATION 166 4.4.3
ATOMIC TRANSPORT 170 4.5 ORGANIC MOLECULES 172 4.6 APPLICATIONS 178
4.6.1 A BASIS FOR PHASE TRANSFORMATIONS 178 TABLE OF CONTENTS XIII 4.6.2
SILICON CRYSTAL FABRICATION 180 4.6.3 RAPID THERMAL PROCESSING 187 4.7
SUMMARY POINTS 189 4.8 HOMEWORK 191 4.9 SUGGESTED READINGS AND
REFERENCES 194 5. ENGINEERING ELECTRONIC STRUCTURE 195 5.1 LINKING
ATOMIC ORBITALS TO BANDS 196 5.1.1 HOMOPOLAR SEMICONDUCTORS 197 5.1.2
HETEROPOLAR COMPOUNDS 201 5.2 LCAO: FROM ATOMIC ORBITALS TO BANDS 206
5.3 COMMON SEMICONDUCTOR ENERGY BANDS 215 5.4 PRESSURE AND TEMPERATURE
DEPENDENCE 223 5.5 APPLICATIONS 226 5.5.1 EXPERIMENTAL BAND STRUCTURES
226 5.5.2 GUNN DIODES 228 5.6 SUMMARY POINTS 232 5.7 HOMEWORK 233 5.8
SUGGESTED READINGS & REFERENCES 235 6. SEMICONDUCTOR ALLOYS 237 6.1
ALLOY SELECTION 238 6.1.1 OVERVIEW ". 238 6.1.2 CHOOSING ALLOY
CONSTITUENTS 241 6.2 SEMICONDUCTOR ALLOY THERMODYNAMICS 245 6.2.1
REGULAR SOLUTION THEORY REVISITED 245 6.2.2 TERNARY AND QUATERNARY
SOLUTIONS 249 6.2.3 MORE MECHANISMS FOR ALLOY ORDERING 252 6.3 BAND GAP
BOWING 255 6.3.1 BINARY AND PSEUDOBINARY ALLOYS 255 6.3.2 BOWING IN
QUATERNARY ALLOYS 260 6.4 SILICON-GERMANIUM ALLOYS 261 6.4.1 STRUCTURE
AND SOLUBILITY 262 6.4.2 BAND GAP ENGINEERING 264 6.4.3 ALLOYING AND
CARRIER MOBILITY 267 6.5 METASTABLE SEMICONDUCTOR ALLOYS 268 6.6
APPLICATIONS ; 272 6.6.1 HETEROJUNCTION BIPOLAR TRANSISTORS 272 6.6.2
SOLAR CELLS 276 6.7 SUMMARY POINTS 280 6.8 HOMEWORK 282 6.9 SUGGESTED
READINGS & REFERENCES 285 XIV TABLE OF CONTENTS 7. DEFECTS IN
SEMICONDUCTORS 289 7.1 POINT DEFECTS 289 7.1.1 ELECTRONIC STATES DUE TO
POINT DEFECTS 291 7.1.2 SHALLOW LEVELS 295 7.1.3 DEPTH OF INTRINSIC
DEFECTS 299 7.1.4 IONIZATION OF DEFECTS 300 7.1.5 POINT DEFECT DENSITIES
302 7.1.6 VACANCIES AND DOPANT DIFFUSIVITY 308 7.2 LINE DEFECTS 311 7.3
STRAIN RELIEF IN HETEROSTRUCTURES 320 7.3.1 ENERGETICS OF STRAIN RELIEF
322 7.3.2 MISFIT DISLOCATIONS 328 7.3.3 DISLOCATION DYNAMICS 329 7.3.4
REDUCING PROBLEMS DUE TO STRAIN RELIEF 336 7.4 PLANAR AND VOLUME DEFECTS
337 7.4.1 TWINS AND STACKING FAULTS 337 7.4.2 SURFACES, INTERFACES,
GRAIN BOUNDARIES 340 7.4.3 VOLUME DEFECTS 343 7.5 SIC: A CASE STUDY IN
STACKING FAULTS 344 7.6 SUMMARY POINTS 349 7.7 HOMEWORK 352 7.8
SUGGESTED READINGS & REFERENCES 355 8. AMORPHOUS SEMICONDUCTORS 357 8.1
STRUCTURE AND BONDING 358 8.2 HYDROGENATED AMORPHOUS SI 364 8.3
DEPOSITION METHODS FOR A-SI 366 8.4 ELECTRONIC PROPERTIES 367 8.4.1
CARRIER TRANSPORT AND MOBILITY 367 8.4.2 MOBILITY MEASUREMENTS 370 8.4.3
DOPING 372 8.4.4 SHORT-RANGE ORDER 373 8.5 OPTICAL PROPERTIES 374 8.6
AMORPHOUS SEMICONDUCTOR ALLOYS 377 8.7 APPLICATIONS. 380 8.7.1 THIN FILM
TRANSISTORS 380 8.7.2 SOLAR CELLS 383 8.8 SUMMARY POINTS 389 8.9
HOMEWORK 391 8.10 SUGGESTED READINGS AND REFERENCES 392 TABLE OF
CONTENTS XV 9. ORGANIC SEMICONDUCTORS 395 9.1 MATERIALS OVERVIEW 395
9.1.1 CONJUGATED ORGANIC MATERIALS 396 9.1.2 IONIZED ORGANIC MOLECULAR
STRUCTURES 403 9.2 OVERVIEW OF ORGANIC DEVICES 407 9.2.1 LIGHT EMITTING
DEVICES 408 9.2.2 TRANSISTORS 411 9.3 MOLECULAR OPTOELECTRONIC MATERIALS
414 9.3.1 MOLECULAR ELECTRON TRANSPORTERS 415 9.3.2 MOLECULAR HOLE
TRANSPORTERS 417 9.3.3 DYE MOLECULES 420 9.3.4 MOLECULES FOR THIN FILM
TRANSISTORS 427 9.4 POLYMER OPTOELECTRONIC ORGANICS 428 9.4.1 POLYMERS
FOR ORGANIC LIGHT EMITTING DEVICES 429 9.4.2 POLYMERS FOR TRANSISTORS
434 9.5 CONTACT TO ORGANIC MATERIALS 436 9.5.1 THE CATHODE CONTACT 436
9.5.2 THE ANODE CONTACT 439 9.6 DEFECTS IN ORGANIC MATERIALS 440 9.7
PATTERNING ORGANIC MATERIALS 442 9.8 SUMMARY POINTS 446 9.9 HOMEWORK 448
9.10 SUGGESTED READINGS & REFERENCES 450 10. THIN FILM GROWTH PROCESSES
455 10.1 GROWTH PROCESSES 455 10.2 GAS PHASE TRANSPORT 460 10.3
ADSORPTION 461 10.4 DESORPTION 464 10.5 STICKING COEFFICIENT & SURFACE
COVERAGE 466 10.6 NUCLEATION & GROWTH OF THIN FILMS 468 10.7 SURFACE
DIFFUSION 474 10.8 SURFACE ENERGY 477 10.9 MORPHOLOGY DETERMINED BY
NUCLEATION 481 10.10 MICROSTRUCTURE EVOLUTION 484 10.11 RESIDUAL STRESS
AND ADHESION 485 10.12 APPLICATIONS 488 10.12.1 ADSORPTION, DESORPTION
AND BINDING OF H TO SI 488 10.12.2 SURFACE PROCESSES IN GAAS EPITAXIAL
GROWTH 491 10.13 SUMMARY POINTS 496 10.14 HOMEWORK PROBLEMS 499 10.15
SUGGESTED READINGS & REFERENCES 502 XVI TABLE OF CONTENTS 11. PHYSICAL
VAPOR DEPOSITION 505 11.1 EVAPORATION 505 11.1.1 BASIC SYSTEM GEOMETRIES
506 11.1.2 SOURCES 508 11.1.3 VAPOR PRESSURE 516 11.2 MONITORING
DEPOSITION RATES 517 11.2.1 SIMPLE RATE MONITORING METHODS 518 11.2.2
REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION 520 11.3 SPUTTERING 526
11.3.1 SPUTTERING YIELD 527 11.3.2 ENERGETIC PARTICLES 533 11.3.3
SPUTTERING SYSTEMS 539 11.3.4 GLOW DISCHARGE BASICS 542 11.4 FAST
PARTICLE MODIFICATION OF FILMS 553 11.5 APPLICATION 560 11.6 SUMMARY
POINTS 564 11.7 HOMEWORK PROBLEMS 567 11.8 SUGGESTED READINGS &
REFERENCES 570 12. CHEMICAL VAPOR DEPOSITION 573 12.1 OVERVIEW 574 12.2
CVD APPARATUS 578 12.3 GAS FLOW IN CVD REACTORS 581 12.4 REACTANT
SELECTION AND DESIGN 584 12.5 STIMULATED CVD 587 12.6 SELECTIVE CVD 591
12.7 ATOMIC LAYER DEPOSITION 594 12.8 SAMPLE CVD AND ALD PROCESSES 597
12.9 SUMMARY POINTS 604 12.10 HOMEWORK PROBLEMS 606 12.11 SUGGESTED
READINGS (PREFERENCES 608 APPENDIX 611 USEFUL CONSTANTS 611 UNITS 612
UNIT CONVERSIONS 612 INDEX 615 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Rockett, Angus |
| author_facet | Rockett, Angus |
| author_role | aut |
| author_sort | Rockett, Angus |
| author_variant | a r ar |
| building | Verbundindex |
| bvnumber | BV021287880 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 2800 ZN 4800 |
| ctrlnum | (OCoLC)77256531 (DE-599)BVBBV021287880 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Maschinenbau / Maschinenwesen Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Maschinenbau / Maschinenwesen Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02067nam a2200517 c 4500</leader><controlfield tag="001">BV021287880</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20080222 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">060111s2008 gw ad|| |||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">06,N02,1467</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">977545202</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780387256535</subfield><subfield code="c">Gb. : ca. EUR 78.06, sfr 129.00</subfield><subfield code="9">978-0-387-25653-5</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0387256539</subfield><subfield code="9">0-387-25653-9</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9780387256535</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)77256531</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV021287880</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-20</subfield><subfield code="a">DE-703</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-1050</subfield><subfield code="a">DE-573</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152</subfield><subfield code="2">22</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 2800</subfield><subfield code="0">(DE-625)146366:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4800</subfield><subfield code="0">(DE-625)157408:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">620</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Rockett, Angus</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">The materials science of semiconductors</subfield><subfield code="c">Angus Rockett</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York, NY</subfield><subfield code="b">Springer</subfield><subfield code="c">2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XVI, 622 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Materials science</subfield><subfield code="x">Study and teaching (Higher)</subfield><subfield code="v">Problems, exercises, etc</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Study and teaching (Higher)</subfield><subfield code="v">Problems, exercises, etc</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Werkstoffkunde</subfield><subfield code="0">(DE-588)4079184-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Werkstoffkunde</subfield><subfield code="0">(DE-588)4079184-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="q">text/html</subfield><subfield code="u">http://deposit.dnb.de/cgi-bin/dokserv?id=2737925&prov=M&dok_var=1&dok_ext=htm</subfield><subfield code="3">Inhaltstext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">HEBIS Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014608787&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-014608787</subfield></datafield></record></collection> |
| id | DE-604.BV021287880 |
| illustrated | Illustrated |
| index_date | 2024-07-02T13:49:05Z |
| indexdate | 2024-07-09T20:34:47Z |
| institution | BVB |
| isbn | 9780387256535 0387256539 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-014608787 |
| oclc_num | 77256531 |
| open_access_boolean | |
| owner | DE-20 DE-703 DE-29T DE-1050 DE-573 |
| owner_facet | DE-20 DE-703 DE-29T DE-1050 DE-573 |
| physical | XVI, 622 S. Ill., graph. Darst. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Springer |
| record_format | marc |
| spelling | Rockett, Angus Verfasser aut The materials science of semiconductors Angus Rockett New York, NY Springer 2008 XVI, 622 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials science Study and teaching (Higher) Problems, exercises, etc Semiconductors Study and teaching (Higher) Problems, exercises, etc Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Werkstoffkunde (DE-588)4079184-1 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Werkstoffkunde (DE-588)4079184-1 s DE-604 Halbleiterphysik (DE-588)4113829-6 s text/html http://deposit.dnb.de/cgi-bin/dokserv?id=2737925&prov=M&dok_var=1&dok_ext=htm Inhaltstext HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014608787&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Rockett, Angus The materials science of semiconductors Materials science Study and teaching (Higher) Problems, exercises, etc Semiconductors Study and teaching (Higher) Problems, exercises, etc Halbleiter (DE-588)4022993-2 gnd Halbleiterphysik (DE-588)4113829-6 gnd Werkstoffkunde (DE-588)4079184-1 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4113829-6 (DE-588)4079184-1 |
| title | The materials science of semiconductors |
| title_auth | The materials science of semiconductors |
| title_exact_search | The materials science of semiconductors |
| title_exact_search_txtP | The materials science of semiconductors |
| title_full | The materials science of semiconductors Angus Rockett |
| title_fullStr | The materials science of semiconductors Angus Rockett |
| title_full_unstemmed | The materials science of semiconductors Angus Rockett |
| title_short | The materials science of semiconductors |
| title_sort | the materials science of semiconductors |
| topic | Materials science Study and teaching (Higher) Problems, exercises, etc Semiconductors Study and teaching (Higher) Problems, exercises, etc Halbleiter (DE-588)4022993-2 gnd Halbleiterphysik (DE-588)4113829-6 gnd Werkstoffkunde (DE-588)4079184-1 gnd |
| topic_facet | Materials science Study and teaching (Higher) Problems, exercises, etc Semiconductors Study and teaching (Higher) Problems, exercises, etc Halbleiter Halbleiterphysik Werkstoffkunde |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=2737925&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=014608787&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT rockettangus thematerialsscienceofsemiconductors |