Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
2005
|
| Schlagworte: | |
| Beschreibung: | Erlangen-Nürnberg, Univ., Diss., 2005 |
| Beschreibung: | IV, 118 S. graph. Darst. |
Internformat
MARC
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| 245 | 1 | 0 | |a Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC |c von Sergey Reshanov |
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Datensatz im Suchindex
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| author | Reshanov, Sergey 1974- |
| author_GND | (DE-588)130564591 |
| author_facet | Reshanov, Sergey 1974- |
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| discipline | Physik |
| discipline_str_mv | Physik |
| format | Book |
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| illustrated | Illustrated |
| index_date | 2024-07-02T13:31:14Z |
| indexdate | 2024-07-09T20:28:35Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-014283409 |
| oclc_num | 181527991 |
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| physical | IV, 118 S. graph. Darst. |
| publishDate | 2005 |
| publishDateSearch | 2005 |
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| spelling | Reshanov, Sergey 1974- Verfasser (DE-588)130564591 aut Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC von Sergey Reshanov 2005 IV, 118 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Erlangen-Nürnberg, Univ., Diss., 2005 Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s Gitterbaufehler (DE-588)4125030-8 s DE-604 |
| spellingShingle | Reshanov, Sergey 1974- Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC Siliciumcarbid (DE-588)4055009-6 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| subject_GND | (DE-588)4055009-6 (DE-588)4125030-8 (DE-588)4113937-9 |
| title | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC |
| title_auth | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC |
| title_exact_search | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC |
| title_exact_search_txtP | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC |
| title_full | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC von Sergey Reshanov |
| title_fullStr | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC von Sergey Reshanov |
| title_full_unstemmed | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC von Sergey Reshanov |
| title_short | Device-relevant defect centers and minority carrier lifetime in 3C-, 4H- and 6H-SiC |
| title_sort | device relevant defect centers and minority carrier lifetime in 3c 4h and 6h sic |
| topic | Siliciumcarbid (DE-588)4055009-6 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| topic_facet | Siliciumcarbid Gitterbaufehler Hochschulschrift |
| work_keys_str_mv | AT reshanovsergey devicerelevantdefectcentersandminoritycarrierlifetimein3c4hand6hsic |